WO2001043138A1 - Electrically addressable volatile and non-volatile molecular-based switching devices - Google Patents
Electrically addressable volatile and non-volatile molecular-based switching devices Download PDFInfo
- Publication number
- WO2001043138A1 WO2001043138A1 PCT/US2000/018805 US0018805W WO0143138A1 WO 2001043138 A1 WO2001043138 A1 WO 2001043138A1 US 0018805 W US0018805 W US 0018805W WO 0143138 A1 WO0143138 A1 WO 0143138A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switching device
- solid state
- molecular switching
- volatile
- state molecular
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/14—Use of different molecule structures as storage states, e.g. part of molecule being rotated
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
Definitions
- Random access memory is becoming an increasingly important component of electronic hardware, with applications ranging from 'smart credit cards' to computer storage, to name just two.
- Dynamic random access memory (DRAM) is based on silicon fabrication technology, and is a volatile memory characterized by a destructive read. This means that it is necessary to supply voltage to the memory bits at all times, or the information will disappear, Furthermore, each memory element has associated with it a transistor. This means that such memory devices will never be manufactured at a density that is greater than that allowable by the current generation of lithographic technology. Finally, reading the state of a DRAM bit will destroy the information in that bit. More recently, a device called ferromagnetic RAM, or Fe-RAM, has been developed by a number of companies.
- FIG. 4B depicts on a molecular level the switching mechanism for the [2] catenane.
- FIG. 9 is a graph showing the cycling of an exemplary non-volatile
- Reconi ⁇ gurable as used herein means that a switch can change its state multiple times via a reversible process such as an oxidation or reduction; in other words the switch can be opened and closed multiple times such at the memory bits in a random access memory (RAM).
- Redox active as used herein means that a molecule or molecular junction can be electrochemically reduced or oxidized, meaning that electrical charge can be added or taken away from the molecules or molecular junction.
- Micron-scale and submicron-scale wires as used herein refers to rod or ribbon-shaped conductors of semiconductors with widths or diameters having the dimensions of 1 to 10 micrometers, heights that can range from a few tens of nanometers to a micrometer, and lengths of several micrometers and longer.
- FIG. 1 The operation of a device utilizing a hysteresis loop as the basis for a reconfigurable switch, or a memory element, is shown in FIG. 1.
- a variable voltage is applied across the device from low voltage (12) to high voltage (13)
- current is observed to follow one voltage dependent path (16).
- voltage is scanned from high voltage (13) to low voltage (12)
- current is observed to take a different voltage-dependent path (17).
- a voltage that is in between two values (14 and 15) is applied to the device, then the measured current is dependent on the previous history of the device. For the curve in FIG.
- a device which exhibits a hysteresis loop such as that shown in FIG. 2 may be made non-volatile by adjusting the electrode materials so that the chemical potential between the two electrodes (the difference in Fermi energies) is equal to some value within the voltage range of the 'read' step (24 to 25).
- [2] catenane can be used as a switch is shown in FIG. 3, which is meant to symbolize a [2] catenane. Catenanes having more than two rings may be used, if desired. However, the use of [2] catenanes is preferred.
- Such a [2] catenane has a molecular structure that consists of two interlocking rings (31,32). One of the rings (32) has two chemical sites (33,34), each one of which can bind to the other ring (31), and so the catenane is bistable.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU60836/00A AU6083600A (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular-based switching devices |
EP00947182A EP1236206B1 (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular-based switching devices |
JP2001543738A JP4707295B2 (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular switching devices |
DE60030761T DE60030761T2 (en) | 1999-12-10 | 2000-07-10 | VOLATILE AND NON-VOLATILE SWITCHES ON MOLECULAR BASE |
CA2393791A CA2393791C (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular-based switching devices |
HK03101281A HK1049228A1 (en) | 1999-12-10 | 2003-02-19 | Electrically addressable volatile and non-volatilemolecular-based switching devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/459,246 | 1999-12-10 | ||
US09/459,246 US6198655B1 (en) | 1999-12-10 | 1999-12-10 | Electrically addressable volatile non-volatile molecular-based switching devices |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001043138A1 true WO2001043138A1 (en) | 2001-06-14 |
Family
ID=23824000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/018805 WO2001043138A1 (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular-based switching devices |
Country Status (9)
Country | Link |
---|---|
US (1) | US6198655B1 (en) |
EP (1) | EP1236206B1 (en) |
JP (1) | JP4707295B2 (en) |
AT (1) | ATE339765T1 (en) |
AU (1) | AU6083600A (en) |
CA (1) | CA2393791C (en) |
DE (1) | DE60030761T2 (en) |
HK (1) | HK1049228A1 (en) |
WO (1) | WO2001043138A1 (en) |
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-
1999
- 1999-12-10 US US09/459,246 patent/US6198655B1/en not_active Expired - Lifetime
-
2000
- 2000-07-10 AU AU60836/00A patent/AU6083600A/en not_active Abandoned
- 2000-07-10 WO PCT/US2000/018805 patent/WO2001043138A1/en active IP Right Grant
- 2000-07-10 AT AT00947182T patent/ATE339765T1/en not_active IP Right Cessation
- 2000-07-10 CA CA2393791A patent/CA2393791C/en not_active Expired - Fee Related
- 2000-07-10 EP EP00947182A patent/EP1236206B1/en not_active Expired - Lifetime
- 2000-07-10 DE DE60030761T patent/DE60030761T2/en not_active Expired - Lifetime
- 2000-07-10 JP JP2001543738A patent/JP4707295B2/en not_active Expired - Fee Related
-
2003
- 2003-02-19 HK HK03101281A patent/HK1049228A1/en not_active IP Right Cessation
Patent Citations (1)
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US6031756A (en) * | 1997-02-06 | 2000-02-29 | International Business Machines Corporation | Molecule, layered medium and method for creating a pattern |
Also Published As
Publication number | Publication date |
---|---|
HK1049228A1 (en) | 2003-05-02 |
CA2393791A1 (en) | 2001-06-14 |
JP2003516602A (en) | 2003-05-13 |
AU6083600A (en) | 2001-06-18 |
EP1236206B1 (en) | 2006-09-13 |
DE60030761T2 (en) | 2007-09-20 |
DE60030761D1 (en) | 2006-10-26 |
ATE339765T1 (en) | 2006-10-15 |
CA2393791C (en) | 2010-06-08 |
US6198655B1 (en) | 2001-03-06 |
JP4707295B2 (en) | 2011-06-22 |
EP1236206A1 (en) | 2002-09-04 |
EP1236206A4 (en) | 2004-05-19 |
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