WO2001046989A3 - Decoupling capacitors for thin gate oxides - Google Patents

Decoupling capacitors for thin gate oxides Download PDF

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Publication number
WO2001046989A3
WO2001046989A3 PCT/US2000/031352 US0031352W WO0146989A3 WO 2001046989 A3 WO2001046989 A3 WO 2001046989A3 US 0031352 W US0031352 W US 0031352W WO 0146989 A3 WO0146989 A3 WO 0146989A3
Authority
WO
WIPO (PCT)
Prior art keywords
source
drain regions
gate poly
voltage
gate
Prior art date
Application number
PCT/US2000/031352
Other languages
French (fr)
Other versions
WO2001046989A2 (en
Inventor
Ali Keshavarzi
Vivek K De
Tanay Karnik
Rajendran Nair
Original Assignee
Intel Corp
Ali Keshavarzi
Vivek K De
Tanay Karnik
Rajendran Nair
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp, Ali Keshavarzi, Vivek K De, Tanay Karnik, Rajendran Nair filed Critical Intel Corp
Priority to GB0215177A priority Critical patent/GB2374462B/en
Priority to AU30726/01A priority patent/AU3072601A/en
Priority to DE10085347T priority patent/DE10085347B4/en
Priority to JP2001547425A priority patent/JP4954413B2/en
Publication of WO2001046989A2 publication Critical patent/WO2001046989A2/en
Publication of WO2001046989A3 publication Critical patent/WO2001046989A3/en
Priority to HK02108392.5A priority patent/HK1046776B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In some embodiments, the invention involves a die having a first conductor carrying a power supply voltage and a second conductor carrying a ground voltage. A semiconductor capacitor operating in depletion mode is coupled between the first and second conductors to provide decoupling capacitance between the first and second conductors, the semiconductor capacitor having a gate voltage. Various configurations may be used including: n+ gate poly and n+ source/drain regions in an n-body; p+ gate poly and n+ source/drain regions in an n-body; p+ gate poly and p+ source/drain regions in an n-body; p+ gate poly and p+ source/drain regions in a p-body; n+ gate poly and p+ source/drain regions in a p-body; n+ gate poly and n+ source/drain regions in a p-body. The power supply voltage may have a larger absolute value than does a flatband voltage.
PCT/US2000/031352 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides WO2001046989A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB0215177A GB2374462B (en) 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides
AU30726/01A AU3072601A (en) 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides
DE10085347T DE10085347B4 (en) 1999-12-22 2000-11-13 Use of a MOS structure as suppression capacitor for thin gate oxides
JP2001547425A JP4954413B2 (en) 1999-12-22 2000-11-13 Thin gate oxide decoupling capacitor
HK02108392.5A HK1046776B (en) 1999-12-22 2002-11-20 Decoupling capacitors for thin gate oxides

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/469,406 US6828638B2 (en) 1999-12-22 1999-12-22 Decoupling capacitors for thin gate oxides
US09/469,406 1999-12-22

Publications (2)

Publication Number Publication Date
WO2001046989A2 WO2001046989A2 (en) 2001-06-28
WO2001046989A3 true WO2001046989A3 (en) 2002-05-10

Family

ID=23863664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/031352 WO2001046989A2 (en) 1999-12-22 2000-11-13 Decoupling capacitors for thin gate oxides

Country Status (8)

Country Link
US (1) US6828638B2 (en)
JP (1) JP4954413B2 (en)
KR (1) KR100532208B1 (en)
AU (1) AU3072601A (en)
DE (1) DE10085347B4 (en)
GB (1) GB2374462B (en)
HK (1) HK1046776B (en)
WO (1) WO2001046989A2 (en)

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US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
JP4046634B2 (en) * 2003-04-08 2008-02-13 Ｎｅｃエレクトロニクス株式会社 Voltage-controlled capacitance element and semiconductor integrated circuit
EP1662652B1 (en) * 2003-08-05 2008-11-05 Epson Toyocom Corporation Piezo-oscillator
JP2005175003A (en) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd Decoupling capacitor and semiconductor integrated circuit
DE102004006484A1 (en) * 2004-02-10 2005-08-25 Infineon Technologies Ag Integrated circuit with electrostatic discharge (ESD) resistant capacitor located in N-trough, with certain polarity of capacitor permitting formation depletion zone in trough and high ESD strength of capacitor
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
WO2006037376A1 (en) * 2004-10-06 2006-04-13 Freescale Semiconductor, Inc A varactor
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7477541B2 (en) * 2006-02-14 2009-01-13 International Business Machines Corporation Memory elements and methods of using the same
US7358823B2 (en) * 2006-02-14 2008-04-15 International Business Machines Corporation Programmable capacitors and methods of using the same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
EP2100333A4 (en) * 2007-01-01 2012-05-09 Sandisk Technologies Inc Integrated circuits and methods with two types of decoupling capacitors
KR100907020B1 (en) * 2008-02-25 2009-07-08 주식회사 하이닉스반도체 Apparatus for supplying power in semiconductor integrated circuit and input impedance control method of the same
FR2982707A1 (en) * 2011-11-10 2013-05-17 St Microelectronics Sa Capacitor for use in silicon on insulator type integrated circuit, has metal oxide semiconductor transistor whose source and drain are connected to node and gate, and semiconductor substrate connected to another node
KR102143520B1 (en) * 2014-09-17 2020-08-11 삼성전자 주식회사 Pumping capacitor
US9837555B2 (en) 2015-04-15 2017-12-05 Futurewei Technologies, Inc. Apparatus and method for a low loss coupling capacitor
US10510906B2 (en) * 2016-07-01 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. MOS capacitor, semiconductor fabrication method and MOS capacitor circuit
JP7027176B2 (en) * 2018-01-22 2022-03-01 ラピスセミコンダクタ株式会社 Semiconductor device

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US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
US5962887A (en) * 1996-06-18 1999-10-05 Micron Technology, Inc. Metal-oxide-semiconductor capacitor

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US5962887A (en) * 1996-06-18 1999-10-05 Micron Technology, Inc. Metal-oxide-semiconductor capacitor

Also Published As

Publication number Publication date
DE10085347T1 (en) 2003-01-30
AU3072601A (en) 2001-07-03
JP2004501501A (en) 2004-01-15
DE10085347B4 (en) 2009-04-09
HK1046776B (en) 2004-12-03
US6828638B2 (en) 2004-12-07
HK1046776A1 (en) 2003-01-24
KR100532208B1 (en) 2005-11-29
KR20020089311A (en) 2002-11-29
GB2374462A (en) 2002-10-16
GB2374462B (en) 2004-05-26
GB0215177D0 (en) 2002-08-07
US20020140109A1 (en) 2002-10-03
WO2001046989A2 (en) 2001-06-28
JP4954413B2 (en) 2012-06-13

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