WO2001047076A3 - Wide ridge pump laser - Google Patents

Wide ridge pump laser Download PDF

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Publication number
WO2001047076A3
WO2001047076A3 PCT/US2000/042790 US0042790W WO0147076A3 WO 2001047076 A3 WO2001047076 A3 WO 2001047076A3 US 0042790 W US0042790 W US 0042790W WO 0147076 A3 WO0147076 A3 WO 0147076A3
Authority
WO
WIPO (PCT)
Prior art keywords
ridge
laser
transverse mode
pump laser
wide ridge
Prior art date
Application number
PCT/US2000/042790
Other languages
French (fr)
Other versions
WO2001047076A2 (en
Inventor
Yongan Wu
Original Assignee
Corning Lasertron Inc
Yongan Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/466,973 external-priority patent/US6499888B1/en
Application filed by Corning Lasertron Inc, Yongan Wu filed Critical Corning Lasertron Inc
Priority to AU47181/01A priority Critical patent/AU4718101A/en
Priority to JP2001547705A priority patent/JP2003518758A/en
Priority to EP00992925A priority patent/EP1240696A2/en
Priority to CA002395009A priority patent/CA2395009A1/en
Publication of WO2001047076A2 publication Critical patent/WO2001047076A2/en
Publication of WO2001047076A3 publication Critical patent/WO2001047076A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G02B6/4203—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H01S5/147—External cavity lasers using a fiber as external cavity having specially shaped fibre, e.g. lensed or tapered end portion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Abstract

A laser pump module has a ridge waveguide chip with a ridge width that is greater than 4 micrometers (νm). This is a relatively wide ridge for this class of laser chips. Specifically, especially for signal lasers, narrow ridge widths are used in order to control lateral and transverse mode shape and size. In the present invention, however, where a chhip is used for pump applications, a wider ridge is used to increase the laser effective gain volume and decrease the loss associated with the lowest order transverse mode to thus maximize the useful power and light that is coupled into the fiber.
PCT/US2000/042790 1999-12-20 2000-12-13 Wide ridge pump laser WO2001047076A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU47181/01A AU4718101A (en) 1999-12-20 2000-12-13 Wide ridge pump laser
JP2001547705A JP2003518758A (en) 1999-12-20 2000-12-13 Pump laser with wide ridge
EP00992925A EP1240696A2 (en) 1999-12-20 2000-12-13 Wide ridge pump laser
CA002395009A CA2395009A1 (en) 1999-12-20 2000-12-13 Wide ridge pump laser

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/466,973 1999-12-20
US09/466,973 US6499888B1 (en) 1999-12-20 1999-12-20 Wide ridge pump laser
US47769500A 2000-01-06 2000-01-06
US09/477,695 2000-01-06

Publications (2)

Publication Number Publication Date
WO2001047076A2 WO2001047076A2 (en) 2001-06-28
WO2001047076A3 true WO2001047076A3 (en) 2002-03-21

Family

ID=27041853

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/042790 WO2001047076A2 (en) 1999-12-20 2000-12-13 Wide ridge pump laser

Country Status (6)

Country Link
EP (1) EP1240696A2 (en)
JP (1) JP2003518758A (en)
CN (1) CN1411622A (en)
AU (1) AU4718101A (en)
CA (1) CA2395009A1 (en)
WO (1) WO2001047076A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7924658B2 (en) 2008-10-06 2011-04-12 Tdk Corporation Heat-assisted magnetic recording head constituted of slider and light source unit, and manufacturing method of the head
JP4883536B2 (en) * 2008-11-06 2012-02-22 三洋電機株式会社 Semiconductor laser device and semiconductor laser device
CN114640022A (en) * 2020-12-16 2022-06-17 上海禾赛科技有限公司 Resonant cavity, laser and laser radar

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689797A (en) * 1985-08-19 1987-08-25 Gte Laboratories Incorporated High power single spatial mode semiconductor laser
US4728628A (en) * 1984-03-12 1988-03-01 British Telecommunications Public Limited Company Method of making ridge waveguide lasers
JPH01220491A (en) * 1988-02-29 1989-09-04 Nec Corp Semiconductor laser device
JPH06188510A (en) * 1992-12-15 1994-07-08 Furukawa Electric Co Ltd:The Semiconductor laser element
JPH08195525A (en) * 1995-01-18 1996-07-30 Nec Corp Semiconductor laser
EP0793126A1 (en) * 1996-02-29 1997-09-03 STC Submarine Systems Limited Stabilised pump laser
EP0812040A2 (en) * 1996-04-08 1997-12-10 Sumitomo Electric Industries, Ltd. Semiconductor laser module and optical fiber amplifier
JPH10229246A (en) * 1997-02-18 1998-08-25 Mitsubishi Electric Corp Ridge semiconductor laser diode and its manufacturing method
WO1998055891A1 (en) * 1997-06-04 1998-12-10 Lasertron, Inc. Flat top, double-angled, wedge-shaped fiber endface
WO1999034488A1 (en) * 1997-12-31 1999-07-08 Lasertron Semiconductor laser with kink suppression layer
WO2001050163A2 (en) * 2000-01-06 2001-07-12 Corning Lasertron, Inc. Back facet flared ridge for pump laser

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728628A (en) * 1984-03-12 1988-03-01 British Telecommunications Public Limited Company Method of making ridge waveguide lasers
US4689797A (en) * 1985-08-19 1987-08-25 Gte Laboratories Incorporated High power single spatial mode semiconductor laser
JPH01220491A (en) * 1988-02-29 1989-09-04 Nec Corp Semiconductor laser device
JPH06188510A (en) * 1992-12-15 1994-07-08 Furukawa Electric Co Ltd:The Semiconductor laser element
JPH08195525A (en) * 1995-01-18 1996-07-30 Nec Corp Semiconductor laser
EP0793126A1 (en) * 1996-02-29 1997-09-03 STC Submarine Systems Limited Stabilised pump laser
EP0812040A2 (en) * 1996-04-08 1997-12-10 Sumitomo Electric Industries, Ltd. Semiconductor laser module and optical fiber amplifier
JPH10229246A (en) * 1997-02-18 1998-08-25 Mitsubishi Electric Corp Ridge semiconductor laser diode and its manufacturing method
WO1998055891A1 (en) * 1997-06-04 1998-12-10 Lasertron, Inc. Flat top, double-angled, wedge-shaped fiber endface
WO1999034488A1 (en) * 1997-12-31 1999-07-08 Lasertron Semiconductor laser with kink suppression layer
WO2001050163A2 (en) * 2000-01-06 2001-07-12 Corning Lasertron, Inc. Back facet flared ridge for pump laser

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 539 (E - 853) 30 November 1989 (1989-11-30) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 531 (E - 1614) 7 October 1994 (1994-10-07) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 11 29 November 1996 (1996-11-29) *

Also Published As

Publication number Publication date
JP2003518758A (en) 2003-06-10
CA2395009A1 (en) 2001-06-28
EP1240696A2 (en) 2002-09-18
WO2001047076A2 (en) 2001-06-28
AU4718101A (en) 2001-07-03
CN1411622A (en) 2003-04-16

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