WO2001054236A3 - Emitter base on laser diodes - Google Patents

Emitter base on laser diodes Download PDF

Info

Publication number
WO2001054236A3
WO2001054236A3 PCT/RU2001/000026 RU0100026W WO0154236A3 WO 2001054236 A3 WO2001054236 A3 WO 2001054236A3 RU 0100026 W RU0100026 W RU 0100026W WO 0154236 A3 WO0154236 A3 WO 0154236A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser diodes
radiation
wave lengths
spectrum
laser
Prior art date
Application number
PCT/RU2001/000026
Other languages
French (fr)
Russian (ru)
Other versions
WO2001054236A2 (en
Inventor
Vladimir Vadimovi Solodovnikov
Viktor Mikhailovich Zhilin
Mikhail Vitalievich Lebedev
Original Assignee
Rayteq Lasers Ind Ltd
Vladimir Vadimovi Solodovnikov
Viktor Mikhailovich Zhilin
Mikhail Vitalievich Lebedev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rayteq Lasers Ind Ltd, Vladimir Vadimovi Solodovnikov, Viktor Mikhailovich Zhilin, Mikhail Vitalievich Lebedev filed Critical Rayteq Lasers Ind Ltd
Priority to AU2001232502A priority Critical patent/AU2001232502A1/en
Publication of WO2001054236A2 publication Critical patent/WO2001054236A2/en
Publication of WO2001054236A3 publication Critical patent/WO2001054236A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Laser Beam Processing (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention can be used in telecommunication networks being an important part of optical communication systems, for solid-state laser pumping while developing laser technological equipment, medical equipment, measuring instruments, etc. The essence of the invention lies in an emitter based on a large number of laser diodes the radiation of which is synchronised by the action of at least one external single frequency radiation. Obtainment of an output single-frequency radiation from the multitude of laser diodes is possible at entire spectrum width of an output united beam of optical radiation of a plurality of laser diodes. Said optical radiation does not exceed 15θm at a wave lengths difference Δμ. At the condition that the wave lengths correspond to the centre of gravity of the spectrum of the output united beam and to the centre of gravity of the spectrum of the master single frequency radiation the selected wave lengths difference does not exceed ±15θm.
PCT/RU2001/000026 2000-01-24 2001-01-24 Emitter base on laser diodes WO2001054236A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001232502A AU2001232502A1 (en) 2000-01-24 2001-01-24 Emitter base on laser diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000101375/28A RU2163048C1 (en) 2000-01-24 2000-01-24 Radiation source built around laser diodes
RU2000101375 2000-01-24

Publications (2)

Publication Number Publication Date
WO2001054236A2 WO2001054236A2 (en) 2001-07-26
WO2001054236A3 true WO2001054236A3 (en) 2002-02-28

Family

ID=20229561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2001/000026 WO2001054236A2 (en) 2000-01-24 2001-01-24 Emitter base on laser diodes

Country Status (3)

Country Link
AU (1) AU2001232502A1 (en)
RU (1) RU2163048C1 (en)
WO (1) WO2001054236A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2477553C1 (en) * 2011-09-09 2013-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ижевский государственный технический университет имени М.Т. Калашникова" Pulsed laser radiation source
CN104396101B (en) * 2012-06-26 2017-07-11 皇家飞利浦有限公司 The laser module of the linear intensity profile of homogeneous
RU2664167C2 (en) * 2017-01-13 2018-08-15 Михаил Николаевич Титов Method for over venous laser blood irradiation
RU189439U1 (en) * 2018-10-23 2019-05-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Ижевский государственный технический университет имени М.Т. Калашникова" SOURCE OF PULSE LASER RADIATION
RU2739253C1 (en) * 2019-12-19 2020-12-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Ижевский государственный технический университет имени М.Т. Калашникова" Pulsed laser radiation source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649351A (en) * 1984-10-19 1987-03-10 Massachusetts Institute Of Technology Apparatus and method for coherently adding laser beams
US5295209A (en) * 1991-03-12 1994-03-15 General Instrument Corporation Spontaneous emission source having high spectral density at a desired wavelength
US5463534A (en) * 1990-08-01 1995-10-31 Diomed Limited High power light source

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649351A (en) * 1984-10-19 1987-03-10 Massachusetts Institute Of Technology Apparatus and method for coherently adding laser beams
US5463534A (en) * 1990-08-01 1995-10-31 Diomed Limited High power light source
US5295209A (en) * 1991-03-12 1994-03-15 General Instrument Corporation Spontaneous emission source having high spectral density at a desired wavelength

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BARTELT-BERGER L ET AL: "POWER-SCALABLE SYSTEM OF PHASE-LOCKED SINGLE-MODE DIODE LASERS", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA,WASHINGTON, US, vol. 38, no. 27, 20 September 1999 (1999-09-20), pages 5752 - 5760, XP000860562, ISSN: 0003-6935 *
GILES C R ET AL: "SIMULTANEOUS WAVELENGTH-STABILIZATION OF 980-NM PUMP LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 6, no. 8, 1 August 1994 (1994-08-01), pages 907 - 909, XP000465479, ISSN: 1041-1135 *
HOHIMER J P ET AL: "INTEGRATED INJECTION-LOCKED HIGH-POWER CW DIODE LASER ARRAYS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 55, no. 6, 7 August 1989 (1989-08-07), pages 531 - 533, XP000080868, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2001054236A2 (en) 2001-07-26
AU2001232502A1 (en) 2001-07-31
RU2163048C1 (en) 2001-02-10

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