WO2001057927A1 - Silicon nanoparticle field effect transistor and transistor memory device - Google Patents
Silicon nanoparticle field effect transistor and transistor memory device Download PDFInfo
- Publication number
- WO2001057927A1 WO2001057927A1 PCT/US2001/003479 US0103479W WO0157927A1 WO 2001057927 A1 WO2001057927 A1 WO 2001057927A1 US 0103479 W US0103479 W US 0103479W WO 0157927 A1 WO0157927 A1 WO 0157927A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistor
- silicon nanoparticles
- silicon
- gate
- single electron
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7888—Transistors programmable by two single electrons
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001241441A AU2001241441A1 (en) | 2000-02-02 | 2001-02-02 | Silicon nanoparticle field effect transistor and transistor memory device |
CA002393962A CA2393962C (en) | 2000-02-02 | 2001-02-02 | Silicon nanoparticle field effect transistor and transistor memory device |
EP01912688A EP1252658A4 (en) | 2000-02-02 | 2001-02-02 | Silicon nanoparticle field effect transistor and transistor memory device |
JP2001557090A JP2003522419A (en) | 2000-02-02 | 2001-02-02 | Silicon nanoparticle field effect transistor and transistor memory device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/496,506 US6984842B1 (en) | 1999-10-25 | 2000-02-02 | Silicon nanoparticle field effect transistor and transistor memory device |
US09/496,506 | 2000-02-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001057927A1 true WO2001057927A1 (en) | 2001-08-09 |
WO2001057927A9 WO2001057927A9 (en) | 2003-01-09 |
Family
ID=23972938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/003479 WO2001057927A1 (en) | 2000-02-02 | 2001-02-02 | Silicon nanoparticle field effect transistor and transistor memory device |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1252658A4 (en) |
JP (1) | JP2003522419A (en) |
AU (1) | AU2001241441A1 (en) |
CA (1) | CA2393962C (en) |
WO (1) | WO2001057927A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1536483A1 (en) * | 2002-07-23 | 2005-06-01 | Asahi Glass Company Ltd. | Nonvolatile semiconductor storage device and manufacturing method |
EP3880602A4 (en) * | 2018-11-13 | 2021-12-15 | Khalifa University of Science and Technology | Non-volatile memory systems based on single nanoparticles for compact and high data storage electronic devices |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070108502A1 (en) * | 2005-11-17 | 2007-05-17 | Sharp Laboratories Of America, Inc. | Nanocrystal silicon quantum dot memory device |
KR101338356B1 (en) | 2007-04-10 | 2013-12-06 | 광주과학기술원 | Method of measuring short channel effect of nano-wire field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5714766A (en) * | 1995-09-29 | 1998-02-03 | International Business Machines Corporation | Nano-structure memory device |
US5932889A (en) * | 1994-11-22 | 1999-08-03 | Sanyo Electric Co., Ltd. | Semiconductor device with floating quantum box |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3443856B2 (en) * | 1992-12-28 | 2003-09-08 | ソニー株式会社 | Quantum box assembly device and operation method thereof |
FR2762931B1 (en) * | 1997-05-05 | 1999-06-11 | Commissariat Energie Atomique | QUANTUM ISLANDS DEVICE AND MANUFACTURING METHOD |
-
2001
- 2001-02-02 JP JP2001557090A patent/JP2003522419A/en not_active Withdrawn
- 2001-02-02 CA CA002393962A patent/CA2393962C/en not_active Expired - Fee Related
- 2001-02-02 WO PCT/US2001/003479 patent/WO2001057927A1/en active Application Filing
- 2001-02-02 AU AU2001241441A patent/AU2001241441A1/en not_active Abandoned
- 2001-02-02 EP EP01912688A patent/EP1252658A4/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5932889A (en) * | 1994-11-22 | 1999-08-03 | Sanyo Electric Co., Ltd. | Semiconductor device with floating quantum box |
US5714766A (en) * | 1995-09-29 | 1998-02-03 | International Business Machines Corporation | Nano-structure memory device |
Non-Patent Citations (2)
Title |
---|
See also references of EP1252658A4 * |
TIWARI S. ET AL.: "A sillicon nanocrystals based memory", APPL. PHYS. LETT., vol. 68, no. 10, 4 March 1996 (1996-03-04), pages 1377 - 1379, XP002942599 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1536483A1 (en) * | 2002-07-23 | 2005-06-01 | Asahi Glass Company Ltd. | Nonvolatile semiconductor storage device and manufacturing method |
EP1536483A4 (en) * | 2002-07-23 | 2008-07-16 | Asahi Glass Co Ltd | Nonvolatile semiconductor storage device and manufacturing method |
US7550802B2 (en) | 2002-07-23 | 2009-06-23 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device and manufacturing process of the same |
EP3880602A4 (en) * | 2018-11-13 | 2021-12-15 | Khalifa University of Science and Technology | Non-volatile memory systems based on single nanoparticles for compact and high data storage electronic devices |
Also Published As
Publication number | Publication date |
---|---|
EP1252658A4 (en) | 2008-02-13 |
JP2003522419A (en) | 2003-07-22 |
AU2001241441A1 (en) | 2001-08-14 |
EP1252658A1 (en) | 2002-10-30 |
CA2393962C (en) | 2007-07-03 |
CA2393962A1 (en) | 2001-08-09 |
WO2001057927A9 (en) | 2003-01-09 |
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