WO2001067500A2 - Methods for making nearly planar dielectric films in integrated circuits - Google Patents
Methods for making nearly planar dielectric films in integrated circuits Download PDFInfo
- Publication number
- WO2001067500A2 WO2001067500A2 PCT/US2001/007336 US0107336W WO0167500A2 WO 2001067500 A2 WO2001067500 A2 WO 2001067500A2 US 0107336 W US0107336 W US 0107336W WO 0167500 A2 WO0167500 A2 WO 0167500A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- forming
- layer
- pattern
- deposition rate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
Definitions
- the present invention concerns methods of making integrated circuits, particularly methods of making metal masks and dielectric, or insulative, films.
- Integrated circuits the key components in thousands of electronic and computer products, are interconnected networks of electrical components fabricated on a common foundation, or substrate. Fabricators typically build the circuits layer by layer, using techniques, such as doping, masking, and etching, to form thousands and even millions of microscopic resistors, transistors, and other electrical components on a silicon substrate, known as a wafer. The components are then wired, or interconnected, together to define a specific electric circuit, such as a computer memory.
- planarity significantly affects the accuracy of a photo-imaging process, known as photomasking or photolithography, which entails focusing light on light-sensitive materials to define specific patterns or structures in a layer of an integrated circuit.
- photomasking or photolithography which entails focusing light on light-sensitive materials to define specific patterns or structures in a layer of an integrated circuit.
- the presence of hills and valleys in a layer forces various regions of the layer out of focus, causing photo-imaged features to be smaller or larger than intended.
- hills and valleys can reflect light undesirably onto other regions of a layer and add undesirable features, such as notches, to desired features.
- Chemical-mechanical planarization typically entails applying a fluid containing abrasive particles to a surface of an integrated circuit, and polishing the surface with a rotating polishing head. The process is used frequently to planarize the insulative, or dielectric, layers that lie between layers of metal wiring in integrated circuits. These insulative layers, which typically consist of silicon dioxide, are sometimes called intermetal dielectric layers. In conventional integrated-circuit fabrication, planarization of these layers is necessary because each insulative layer tends to follow the hills and valleys of the underlying metal wiring, similar to the way a bed sheet follows the contours of whatever it covers. Thus, fabricators generally deposit an insulative layer much thicker than necessary to cover the metal wiring and then planarize the insulative layer to remove the hills and valleys.
- a first exemplary method of the invention forms a metal layer with a predetermined maximum feature spacing and then uses a TEOS-based (tetraethyl-orthosilicate-based) oxide deposition procedure to form an oxide film having nearly planar or quasi-planar characteristics.
- the exemplary method executes a CVD (chemical vapor deposition) TEOS oxide procedure to form an oxide layer on a metal layer having a maximum feature spacing of 0.2-0.5 microns.
- a second exemplary method includes voids within the oxide, or more generally insulative, film to improve its effective dielectric constant and thus improve its ability to prevent shorting and crosstalk between metal wiring.
- the exemplary method uses a TEOS process at a non-conformal rate sufficient to encourage the formation of voids, and then uses the TEOS process at a conformal rate of deposition to seal the voids. More generally, however, the invention uses a non-conformal deposition procedure to encourage formation of voids and then a more conformal deposition to seal the voids.
- a third exemplary method increases the metal-fill density of metal patterns to facilitate formation of intermetal dielectric layers having more uniform thicknesses.
- the third exemplary method adds floating metal to open areas in a metal layout and then extends non-floating metal dimensions according to an iterative procedure that entails filling in notches, and corners and moving selected edges of the layout.
- Figure 1 is a cross-sectional view of a partial integrated-circuit assembly 10 including a substrate 12 and metal wires 14a, 14b, and 14c;
- Figure 2 is a cross-sectional view of the Figure 1 integrated-circuit assembly after formation of a substantially planar insulative layer 16, including a portion 16a with voids and a portion 16b without voids;
- Figure 3 is a cross-sectional view of the Figure 2 assembly after a facet etch to improve the planarity of layer 16;
- Figure 4 is a cross-sectional view of the Figure 3 assembly after formation of metal wires 18a and 18b, and substantially planar insulative layer 20, including a portion 20a with voids and a portion 20b without voids;
- Figure 5 is a cross-sectional view of a partial integrated-circuit assembly 21 including a substrate 22 and metal wires 24a, 24b, and 24c;
- Figure 6 is a cross-sectional view of the Figure 5 assembly after formation of an oxide spacer 26 and a substantially planar insulative layer 28, including a portion 28a with voids and a portion 28b without voids;
- Figure 7 is a cross-sectional view of the Figure 6 assembly after a facet etch to improve the planarity of layer 28
- Figure 8 is a cross-sectional view of the Figure 7 assembly after formation of metal wires 30a and 30b, and substantially planar insulative layer 34, including a portion 34a with voids and a portion 34b without voids;
- Figure 9 is a cross-sectional view of a partial integrated-circuit assembly 35 including a substrate 36 and metal wires 36a, 36b, and 36c;
- Figure 10 is a cross-sectional view of the Figure 9 assembly after formation of an oxide spacer 40 and a substantially planar insulative layer 42;
- Figure 11 is a flow chart illustrating an exemplary method of modifying a metal layout to facilitate fabrication of intermetal dielectric layers with more uniform thickness
- Figure 12 is a partial top view of a metal layout showing how the exemplary method of Figure 11 adds metal to open areas in a metal layout;
- Figure 13 is a partial top view of a metal layout showing how the exemplary method of Figure 11 fills notches in a metal layout
- Figure 14 is a partial top view of a metal layout showing how the exemplary method of Figure 11 fills corners in a metal layout
- Figure 15 is a partial view of a metal layout showing how the exemplary method of Figure 11 fills in between opposing edges of live metal regions in a metal layout
- Figure 16 is a partial view of a metal layout showing how the exemplary method of Figure 11 moves edges
- Figure 17 is a block diagram of an exemplary computer system 42 for hosting and executing a software implementation of the exemplary pattern- filling method of Figure 11; and Figure 18 is a simplified schematic diagram of an exemplary integrated memory circuit 50 that incorporates one or more nearly planar intermetal dielectric layers and/ or metal layers made in accord with exemplary methods of the invention.
- Figures 1-4 show a number of exemplary integrated-circuit assemblies, which taken collectively and sequentially, illustrate an exemplary method of making nearly planar or quasi planar dielectric films, or layers, within the scope of the present invention.
- a quasi planar film is globally planar with local nonplanarities having slopes less than or equal to 45 degrees and depths less than the thickness of the next metal layer to be deposited. The local nonplanarities typically occur over the gaps between underlying metal features.
- the method begins with formation of an integrated-circuit assembly or structure 10, which can exist within any integrated circuit, for example, an integrated memory circuit.
- Assembly 10 includes a substrate 12.
- substrate encompasses a semiconductor wafer as well as structures having one or more insulative, semi-insulative, conductive, or semiconductive layers and materials. Thus, for example, the term embraces silicon-on-insulator, silicon-on-sapphire, and other advanced structures.
- Substrate 12 includes three representative wires or conductive structures
- wires 14a-14c are approximately 3000-6000 angstroms thick and comprise metals, such as aluminum, gold, or silver, and nonmetals, such as heavily doped polysilicon. Spacing 14s, in the exemplary embodiment, is 0.3 microns.
- Wires 14a- 14c can be formed using any number of methods, for example, photolithography and dry etching.
- the exemplary embodiment forms a lateral-etch-resistant layer, that is, a layer resistant to lateral etching, on a metal layer before etching.
- suitable layers include a TEOS, oxide-nitride layer.
- Figure 2 shows that the exemplary method next entails forming an insulative layer 16 over substrate 12 and wires 14a- 14b.
- Layer 16 has a thickness 16t of, for example, 6000 angstroms, and includes two layers or sublayers 16a and 16b.
- Sublayer 16a includes a number of voids, particularly voids 17 between wires 14a and 14b, and between wires 14b and 14c, to increase its dielectric constant.
- Sublayer 16b is either substantially voidless or includes a substantially fewer number of voids than sublayer 16a. The presence of voids in sublayer 16a reduces lateral electrical coupling between adjacent metal features, for example, between wires 14a and 14b and between wires 14a- 14c and any overlying conductive structures.
- the exemplary method forms layer 16 using a combination of a non- conformal and conformal oxide depositions.
- a CND TEOS chemical vapor deposition tetraethyl-orthosilicate
- PECND TEOS plasma- enhanced CVD TEOS oxide deposition process
- a non-conformal deposition rate to form void- filled sublayer 16a voids
- a conformal rate to form substantially voidless sublayer 16b.
- Figure 3 shows that after forming sublayer 16b, which includes some level of nonplanarity, the exemplary method facet etches the sublayer at an angle of about 45 degrees to improve its global planarity. (That layer 16b has undergone further processing is highlighted by its new reference numeral 16b'.)
- the facet etch reduces or smooths any sharp trenches in regions overlying gaps between metal features, such as wires 14a-14c.
- face etch refers to any etch process that etches substantially faster in the horizontal direction than in the vertical direction.
- the term includes an angled sputter etch or reactive- ion etch.
- Figure 4 shows the results of forming a second metallization level according to the procedure outlined in Figures 1-3. In brief, this entails forming conductive structures 18a and 18b on insulative sublayer 16b' and forming an insulative layer 20 on sublayer 16b' and conductive structures 18a and 18b. Insulative layer 20, like insulative layer 16, includes void-filled sublayer 20a and substantially void- free sublayer 20b'. Sublayer 20a includes one or more voids 19 between conductive structures 18a and 18b. Sublayer 20b' was facet etch to improve its planarity. Layer 20 has a thickness 20t, of for example 3000-6000 angstroms.
- Figures 5-8 show a number of exemplary integrated-circuit assemblies, which taken collectively and sequentially, illustrate a second exemplary method of making nearly planar or quasi planar dielectric layers within the scope of the present invention.
- the second method is particularly applicable to maximum metal feature spacing greater than about 0.3 microns or oxide thickness less than 6000 angstroms to allow for shallow via formation, that is, via depths less than about 4000 angstroms.
- Figure 5 shows that the method begins with formation of an integrated-circuit assembly or structure 21, which, like assembly 10 in Figure 1, can exist within any integrated circuit.
- Assembly 10 includes a substrate 22 which supports three representative wires or conductive structures 24a, 24b, and 24c, with a desired feature spacing 24s.
- spacing 24s is greater than 0.3 microns.
- Some embodiments set a minimum spacing of 0.17 microns.
- the present invention is not limited to any particular spacing.
- Figure 6 shows that the exemplary method next entails forming an insulative spacer 26 and an insulative layer 28.
- Insulative spacers 26 which consists of silicon dioxide for example, lies over portions of substrate 22 adjacent wires 24a-24c to reduce the effective separation of wires 24a-24c.
- the exemplary method uses a TEOS oxide deposition and subsequent etching to form spacers 26.
- Insulative layer 28 has a thickness 28t of, for example, 4000 angstroms, and includes two sublayers 28a and 28b, analogous to sublayers 16a and 16b in the first embodiment.
- sublayer 28a includes a number of voids 27 between the wires to increase its dielectric constant
- sublayer 28b is either substantially voidless or includes a substantially fewer number of voids than sublayer 28a.
- a two-stage TEOS oxide deposition process similar to that used in the first embodiment, is used to form layer 28.
- Figure 7 shows that after forming sublayer 28b, which includes some level of nonplanarity, the exemplary method facet etches the sublayer at an angle of about 45 degrees to improve its global planarity.
- Figure 8 shows the results of forming a second metallization level according to the procedure outlined in Figures 5-7.
- This entails forming conductive structures 30a and 30b on insulative sublayer 28b' and forming an insulative spacer 32 and an insulative layer 34, which, like insulative layer 28, includes void-filled sublayer 34a and substantially void- free sublayer 34b'.
- Sublayer 34a includes voids 31 between conductive structures 30a and 30b, and sublayer 34b' is facet etched to improve its planarity.
- Figures 9 and 10 show a number of exemplary integrated-circuit assemblies, which taken collectively and sequentially, illustrate a third exemplary method of making nearly planar or quasi planar dielectric layers within the scope of the present invention.
- the third exemplary embodiment is intended for forming insulative films on metal layers with maximum feature spacing up to about 0.5 microns.
- Figure 9 shows that the method begins with formation of an integrated- circuit assembly or structure 35, which like assembly 10 in Figure 1 and assembly 21 in Figure 5, can exist within any integrated circuit.
- Assembly 35 includes a substrate 36 which supports three representative wires or conductive structures 38a, 38b, and 38c, with a desired feature spacing 38s of about 0.5 microns.
- Figure 10 shows the results of forming an oxide spacers 40 and an insulative layer 42.
- the exemplary embodiment forms one or more oxide spacers 40 which is about 1000 angstroms wide, and thus reduces the effective spacing between conductors 38a-38c by 2000 angstroms.
- Forming insulative layer 42 entails executing a flow-fill procedure, such as TRIKON-200 by Trikon Technologies, Inc. To obtain global and local planarity, one can reduce the maximum feature space by using oxide/TEOS spacer as taught in the second exemplary method, or by enlarging the metal feature, or by adding floating metal between the metal features. Exemplary Method of Promoting Uniform Thickness of Intermetal Dielectric Layers
- the inventor developed specific methods of (and related computer software) for increasing the pattern density of metal layouts.
- the methods and associated software take a given metal layout and modify, or fill, open areas of the layout to increase pattern density and thus promote uniform thickness or reduce thickness variation across dielectric layers formed on metal layers based on the layouts. These methods and software can thus be used, for example, to facilitate formation of the conductive structures shown in Figures 1, 5, and 9.
- the exemplary method generally entails iteratively measuring a given layout, adding floating metal to fill large open areas in the layout, and extending or filling out existing metal areas to meet maximum feature spacing, or gap, criteria.
- Figure 11 shows a flow chart of the exemplary method, which is suitable for implementation as a computer-executable program.
- the flow chart includes a number of process or decision blocks 110, 120, 130, and 140.
- the exemplary method begins at process block 110 which entails measuring a given layout. This entails determining open (unmetallized or nonconductive) areas large enough to be filled with floating metal and identifying live metal areas that require additional metal to obtain desired spacing. Floating metal is metal that is not coupled to a signal path or component, whereas live metal is metal that is coupled to a signal path or component.
- the exemplary method proceeds to block 120 which entails adding floating metal to any large areas identified in block 110.
- Figure 12 shows a hypothetical layout having a live metal region 200 with open area 210.
- the exemplary method adds floating metal, such as floating metal region 220.
- the exemplary method After adding floating metal, the exemplary method adds live metal as indicated in block 120 of Figure 11. Figure 12 is again instructive of the exemplary method. If dimension B is less than the sum of dimension SI, dimension S2, and L, the exemplary method adds metal as indicated by added active metal region 230. process block 104 which entails filling in notches in the layout. More particularly, the exemplary method follows an iterative process for adding live (or non-floating) metal, as indicated by blocks 130a-130g.
- Block 130a entails filling notches in the current live metal.
- Figure 13 shows a live metal region 300 of a hypothetical metal layout having a notch 310. Included within notch 310 are a series of iteratively added live metal regions 320-325. The amount of metal added at each iteration can be selected using a minimum surface area criteria or computed dynamically each iteration. The exemplary embodiment repeatedly adds metal to the notch until it is filled, before advancing to block 310b. However, other embodiments can advance to block 310b before the notch is filled, relying on subsequent trips or iterations through the first loop in the flowchart to complete filling of the notch.
- Block 130b entails filling in corners in the current live metal, meaning the live metal after filling notches.
- Figure 14 illustrates a live metal region 400 having a corner 410 and added L-shaped live metal regions 420-423 and a rectangular live metal region 424. (Other embodiments add other shapes of live metal regions.)
- the amount of metal added at each iteration can be selected using a minimum surface area or single-dimensional criteria or computed dynamically each iteration.
- the exemplary embodiment repeatedly adds metal to the corner until it is filled, before advancing to block 130c. However, other embodiments can advance to block 310b before the notch is filled, relying on subsequent trips through the inner loop to complete filling of the notch.
- Block 130c entails filling in between opposing edges of adjacent live metal regions to achieve a desired spacing, such as a maximum desired spacing L.
- Figure 15 shows live metal regions 510 and 520, which have respective opposing edges 510a and 520a.
- the exemplary method entails adding live metal regions, such as live metal regions 521-523, one edge such as edge 520a to achieved the maximum desired spacing L.
- other embodiments add live metal to both of the opposing edges to achieve the desired spacing.
- Still other embodiments look at the lengths of the opposing edges and use one or both of the lengths to determine one or more dimensions of the added live metal regions.
- decision block 130d in Figure 11 This block entails determining whether more live metal can be added. More precisely, this entails measuring the layout as modified by the live metal already added and determining whether there are any adjacent regions that violate the desired maximum spacing criteria. (Note that some exemplary embodiments include more than one maximum spacing criteria to account for areas where capacitive effects or crosstalk issues are of greater importance than others.) If the determination indicates that more metal can be added execution proceeds back to block 130a to fill in remaining notches, and so forth. If the determination indicates that no more live metal can be added to satisfy the maximum spacing criteria, execution to proceeds to block 130e in Figure 11.
- Block 130e entails moving (or redefining) one or more edges (or portions of edges) of live metal regions in the modified layout specification.
- Figure 16 shows live metal regions 610 and 620, which have respective edges 610a and 620a. It also shows the addition of live metal region 630 to edge 620a, which effectively extends the edge. Similarly, edge 620a has been extended with the iterative addition of live metal regions 631 and 632. The additions can be made iteratively using a dynamic or static step size, or all it once by computing the size of an optimal addition to each edge. Exemplary execution then proceeds to decision block 130f.
- decision block 130f the exemplary method decides again whether more metal can be added to the layout. If more metal can be added, the exemplary method repeats execution of process blocks 104-122. However, if no metal can be added, the method proceeds to process block 140 to output the modified layout for use in a fabrication process.
- the exemplary method performs data compaction to minimize or reduce the amount of layout data carried forward from iteration to iteration.
- Data compaction reduces the number of cells which define the circuit associated with the metal layout and the computing power necessary to create the metal layout.
- the exemplary compaction scheme flattens all array placement into single instance placements. For example, a single array placement of a cell incorporating a 3x4 matrix flattens to 12 instances of a single cell. It also flattens specific cells, such as array core cells, vias, or contacts, based on layout or user settings. Additionally, it flattens cells which contain less than a predetermined number of shapes regardless of any other effects. For example, one can flatten cells having less than 10, 20, or 40 shapes.
- the exemplary compaction scheme attempts to merge shapes to minimize overlapping shapes and redundant data.
- the appropriate or optimum degree of flattening depends largely on the processing power and memory capabilities of the computer executing the exemplary method. Faster computers with more core memory and swap space can handle larger number of shapes per cell and thus have less need for flattening than slower computers with less core memory and swap space. In the extreme, a complete circuit layout can be flattened into one cell.
- a given layout design is not a single flat list of shapes but includes two or more cells placed into each other as instances, additional precaution should be taken to reduce the risk of introducing unintended shorts into the layout during the pattern- fill process.
- this entails managing the hierarchy of cells.
- the exemplary embodiment implements a hierarchy management process which recognizes that each cell has an associated fill area that will not change throughout the metal-fill process.
- the exemplary management process entails executing the following steps from the bottom up until all cell dependencies are resolved. For each instance in each cell, the process creates a temporary unique copy of the cell associated with a given instance. After this, the process copies metal from other cells into the cell being examined if it falls into the fill area. The process then copies metal from other cell into the cell if the metal falls into a ring around the fill area. Next, the process identifies, extracts, and marks conflict areas.
- This exemplary pattern-filling method and other simpler or more complex methods embodying one or more filling techniques of the exemplary embodiment can be used in combination with the methods of making nearly planar intermetal dielectric layers described using Figures 1-10. More precisely, one can use a pattern-filling method according to the invention to define a layout for a particular metal layer, form a metal layer based on the layout, and then form a nearly planar intermetal dielectric layer according to the invention on the metal layer. The combination of these methods promises to yield not only a nearly planar dielectric layer that reduces or avoids the need for chemical- mechanical planarization, but also a dielectric layer with less thickness deviation because of the adjusted pattern fill density of the underlying metal layer.
- Exemplary Computer System Incorporating Pattern-Filling Method Figure 17 shows an exemplary computer system or workstation 42 for hosting and executing a software implementation of the exemplary pattern-filling method.
- the most pertinent features of system 42 include a processor 44, a local memory 45 and a data-storage device 46. Additionally, system 42 includes display devices 47 and user-interface devices 48. Some embodiments use distributed processors or parallel processors, and other embodiments use one or more of the following data-storage devices: a read-only memory (ROM), a random-access-memory (RAM), an electrically-erasable and programmable- read-only memory (EEPROM), an optical disk, or a floppy disk.
- Exemplary display devices include a color monitor
- exemplary user-interface devices include a keyboard, mouse, joystick, or microphone.
- the invention is not limited to any genus or species of computerized platforms.
- Data-storage device 46 includes layout-development software 46a, pattern-filling software 46b, an exemplary input metal layout 46c, and an exemplary output metal layout 46d.
- Software 46a and 46b can be installed on system 42 separately or in combination through a network-download or through a computer-readable medium, such as an optical or magnetic disc, or through other software transfer methods.
- Exemplary storage devices include hard disk drives, optical disk drives, or floppy disk drives.
- software 46b is an add-on tool to layout-development software 46a and layout 46c was developed using software 46a.
- software 46b operates as a separate application program and layout 46c was developed by non-resident layout-development software.
- General examples of suitable layout-development software are available from Cadence and Mentor Graphics.. Thus, the invention is not limited to any particular genus or species of layout-development software.
- Exemplary Integrated Memory Circuit Figure 18 shows an exemplary integrated memory circuit 50 that incorporates one or more nearly planar intermetal dielectric layers and/or metal layers within the scope of the present invention.
- One more memory circuits resembling circuit 50 can be used in a variety of computer or computerized systems, such as system 42 of Figure 17.
- Memory circuit 50 which operates according to well-known and understood principles, is generally coupled to a processor (not shown) to form a computer system. More particularly, circuit 50 includes a memory array 52, which comprises a number of memory cells 53a, 53b, 53c, and 53d; a column address decoder 54, and a row address decoder 55; bit lines 56a and 56b; word lines 57a and 57b; and voltage-sense-amplifier circuit 58 coupled in conventional fashion to bit lines 56a and 56b. (For clarity, Figure 18 omits many conventional elements of a memory circuit.)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001566176A JP2004501503A (en) | 2000-03-07 | 2001-03-07 | Method of forming almost flat insulating film in integrated circuit |
AU2001249109A AU2001249109A1 (en) | 2000-03-07 | 2001-03-07 | Methods for making nearly planar dielectric films in integrated circuits |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18765800P | 2000-03-07 | 2000-03-07 | |
US60/187,658 | 2000-03-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001067500A2 true WO2001067500A2 (en) | 2001-09-13 |
WO2001067500A3 WO2001067500A3 (en) | 2002-02-14 |
Family
ID=22689906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/007336 WO2001067500A2 (en) | 2000-03-07 | 2001-03-07 | Methods for making nearly planar dielectric films in integrated circuits |
Country Status (5)
Country | Link |
---|---|
US (6) | US6627549B2 (en) |
JP (2) | JP2004501503A (en) |
KR (1) | KR100530296B1 (en) |
AU (1) | AU2001249109A1 (en) |
WO (1) | WO2001067500A2 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6627549B2 (en) * | 2000-03-07 | 2003-09-30 | Micron Technology, Inc. | Methods for making nearly planar dielectric films in integrated circuits |
US7135734B2 (en) | 2001-08-30 | 2006-11-14 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US6780762B2 (en) * | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | Self-aligned, integrated circuit contact and formation method |
US6737346B2 (en) * | 2002-08-29 | 2004-05-18 | Micron Technology, Inc. | Integrated circuit with modified metal features and method of fabrication therefor |
JP4387654B2 (en) * | 2002-10-10 | 2009-12-16 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
US7364997B2 (en) | 2005-07-07 | 2008-04-29 | Micron Technology, Inc. | Methods of forming integrated circuitry and methods of forming local interconnects |
US7544612B1 (en) * | 2006-01-20 | 2009-06-09 | Skyworks Solutions, Inc. | Method and structure for reducing the effect of vertical steps in patterned layers in semiconductor structures |
US7557002B2 (en) * | 2006-08-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming transistor devices |
US7648921B2 (en) * | 2006-09-22 | 2010-01-19 | Macronix International Co., Ltd. | Method of forming dielectric layer |
US7989322B2 (en) * | 2007-02-07 | 2011-08-02 | Micron Technology, Inc. | Methods of forming transistors |
US7723227B1 (en) * | 2009-03-24 | 2010-05-25 | Micron Technology, Inc. | Methods of forming copper-comprising conductive lines in the fabrication of integrated circuitry |
US7989336B2 (en) * | 2009-05-06 | 2011-08-02 | Micron Technology, Inc. | Methods of forming a plurality of conductive lines in the fabrication of integrated circuitry, methods of forming an array of conductive lines, and integrated circuitry |
US8507304B2 (en) * | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
US8575000B2 (en) * | 2011-07-19 | 2013-11-05 | SanDisk Technologies, Inc. | Copper interconnects separated by air gaps and method of making thereof |
JP6011340B2 (en) | 2011-08-05 | 2016-10-19 | 住友電気工業株式会社 | Substrate, semiconductor device and manufacturing method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0766291A1 (en) * | 1995-08-01 | 1997-04-02 | Texas Instruments Incorporated | Integrated circuit insulator and method |
US5776834A (en) * | 1995-06-07 | 1998-07-07 | Advanced Micro Devices, Inc. | Bias plasma deposition for selective low dielectric insulation |
US5814555A (en) * | 1996-06-05 | 1998-09-29 | Advanced Micro Devices, Inc. | Interlevel dielectric with air gaps to lessen capacitive coupling |
US5858876A (en) * | 1996-04-01 | 1999-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer |
US5872058A (en) * | 1997-06-17 | 1999-02-16 | Novellus Systems, Inc. | High aspect ratio gapfill process by using HDP |
US6030881A (en) * | 1998-05-05 | 2000-02-29 | Novellus Systems, Inc. | High throughput chemical vapor deposition process capable of filling high aspect ratio structures |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5051917A (en) * | 1987-02-24 | 1991-09-24 | International Business Machines Corporation | Method of combining gate array and standard cell circuits on a common semiconductor chip |
US5304505A (en) * | 1989-03-22 | 1994-04-19 | Emanuel Hazani | Process for EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells |
US6109775A (en) * | 1991-07-19 | 2000-08-29 | Lsi Logic Corporation | Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon |
US5252520A (en) * | 1991-10-31 | 1993-10-12 | At&T Bell Laboratories | Integrated circuit interlevel dielectric wherein the first and second dielectric layers are formed with different densities |
US5441915A (en) * | 1992-09-01 | 1995-08-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Process of fabrication planarized metallurgy structure for a semiconductor device |
US5503882A (en) | 1994-04-18 | 1996-04-02 | Advanced Micro Devices, Inc. | Method for planarizing an integrated circuit topography |
US5461003A (en) | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
US5552996A (en) * | 1995-02-16 | 1996-09-03 | International Business Machines Corporation | Method and system using the design pattern of IC chips in the processing thereof |
US5636133A (en) * | 1995-05-19 | 1997-06-03 | International Business Machines Corporation | Efficient generation of fill shapes for chips and packages |
US5597668A (en) * | 1995-07-19 | 1997-01-28 | Vlsi Technology, Inc. | Patterned filled photo mask generation for integrated circuit manufacturing |
US5641712A (en) * | 1995-08-07 | 1997-06-24 | Motorola, Inc. | Method and structure for reducing capacitance between interconnect lines |
US5518959A (en) * | 1995-08-24 | 1996-05-21 | Taiwan Semiconductor Manufacturing Company | Method for selectively depositing silicon oxide spacer layers |
US5763955A (en) * | 1996-07-01 | 1998-06-09 | Vlsi Technology, Inc. | Patterned filled layers for integrated circuit manufacturing |
US6599847B1 (en) | 1996-08-27 | 2003-07-29 | Taiwan Semiconductor Manufacturing Company | Sandwich composite dielectric layer yielding improved integrated circuit device reliability |
US5790417A (en) * | 1996-09-25 | 1998-08-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of automatic dummy layout generation |
US5923563A (en) * | 1996-12-20 | 1999-07-13 | International Business Machines Corporation | Variable density fill shape generation |
US5854125A (en) * | 1997-02-24 | 1998-12-29 | Vlsi Technology, Inc. | Dummy fill patterns to improve interconnect planarity |
US6100205A (en) | 1997-04-02 | 2000-08-08 | United Microelectronics Corp. | Intermetal dielectric layer formation with low dielectric constant using high density plasma chemical vapor deposition process |
US5968610A (en) * | 1997-04-02 | 1999-10-19 | United Microelectronics Corp. | Multi-step high density plasma chemical vapor deposition process |
US6080672A (en) | 1997-08-20 | 2000-06-27 | Micron Technology, Inc. | Self-aligned contact formation for semiconductor devices |
US6081272A (en) * | 1997-09-30 | 2000-06-27 | Intel Corporation | Merging dummy structure representations for improved distribution of artifacts in a semiconductor layer |
US6251470B1 (en) | 1997-10-09 | 2001-06-26 | Micron Technology, Inc. | Methods of forming insulating materials, and methods of forming insulating materials around a conductive component |
US6136687A (en) | 1997-11-26 | 2000-10-24 | Integrated Device Technology, Inc. | Method of forming air gaps for reducing interconnect capacitance |
US6087724A (en) * | 1997-12-18 | 2000-07-11 | Advanced Micro Devices, Inc. | HSQ with high plasma etching resistance surface for borderless vias |
US6093631A (en) * | 1998-01-15 | 2000-07-25 | International Business Machines Corporation | Dummy patterns for aluminum chemical polishing (CMP) |
US5949143A (en) * | 1998-01-22 | 1999-09-07 | Advanced Micro Devices, Inc. | Semiconductor interconnect structure with air gap for reducing intralayer capacitance in metal layers in damascene metalization process |
US6189130B1 (en) * | 1998-04-30 | 2001-02-13 | International Business Machines Corporation | System and method for determining density maps in hierarchical designs |
US6223331B1 (en) | 1998-07-30 | 2001-04-24 | Micron Technology, Inc. | Semiconductor circuit design method for employing spacing constraints and circuits thereof |
US6274479B1 (en) * | 1998-08-21 | 2001-08-14 | Micron Technology, Inc | Flowable germanium doped silicate glass for use as a spacer oxide |
US6262435B1 (en) * | 1998-12-01 | 2001-07-17 | Marina V. Plat | Etch bias distribution across semiconductor wafer |
US6319818B1 (en) * | 1999-01-04 | 2001-11-20 | International Business Machines Corporation | Pattern factor checkerboard for planarization |
US6691297B1 (en) * | 1999-03-04 | 2004-02-10 | Matsushita Electric Industrial Co., Ltd. | Method for planning layout for LSI pattern, method for forming LSI pattern and method for generating mask data for LSI |
US6255162B1 (en) * | 1999-03-16 | 2001-07-03 | United Microelectronics Corp. | Method of gap filling |
US6305000B1 (en) * | 1999-06-15 | 2001-10-16 | International Business Machines Corporation | Placement of conductive stripes in electronic circuits to satisfy metal density requirements |
US6396158B1 (en) * | 1999-06-29 | 2002-05-28 | Motorola Inc. | Semiconductor device and a process for designing a mask |
US6174808B1 (en) | 1999-08-04 | 2001-01-16 | Taiwan Semiconductor Manufacturing Company | Intermetal dielectric using HDP-CVD oxide and SACVD O3-TEOS |
US6323113B1 (en) * | 1999-12-10 | 2001-11-27 | Philips Electronics North America Corporation | Intelligent gate-level fill methods for reducing global pattern density effects |
US6436807B1 (en) * | 2000-01-18 | 2002-08-20 | Agere Systems Guardian Corp. | Method for making an interconnect layer and a semiconductor device including the same |
US6627549B2 (en) * | 2000-03-07 | 2003-09-30 | Micron Technology, Inc. | Methods for making nearly planar dielectric films in integrated circuits |
US6531412B2 (en) * | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
-
2001
- 2001-03-07 US US09/801,265 patent/US6627549B2/en not_active Expired - Lifetime
- 2001-03-07 JP JP2001566176A patent/JP2004501503A/en active Pending
- 2001-03-07 KR KR10-2002-7011717A patent/KR100530296B1/en active IP Right Grant
- 2001-03-07 WO PCT/US2001/007336 patent/WO2001067500A2/en active IP Right Grant
- 2001-03-07 AU AU2001249109A patent/AU2001249109A1/en not_active Abandoned
-
2003
- 2003-09-30 US US10/677,057 patent/US7125800B2/en not_active Expired - Lifetime
-
2004
- 2004-08-26 US US10/926,471 patent/US7235865B2/en not_active Expired - Lifetime
-
2005
- 2005-08-29 US US11/215,098 patent/US20060001022A1/en not_active Abandoned
-
2006
- 2006-07-17 US US11/458,060 patent/US20060246736A1/en not_active Abandoned
- 2006-07-28 US US11/495,421 patent/US20060261435A1/en not_active Abandoned
-
2007
- 2007-01-23 JP JP2007012559A patent/JP2007189236A/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5776834A (en) * | 1995-06-07 | 1998-07-07 | Advanced Micro Devices, Inc. | Bias plasma deposition for selective low dielectric insulation |
EP0766291A1 (en) * | 1995-08-01 | 1997-04-02 | Texas Instruments Incorporated | Integrated circuit insulator and method |
US5858876A (en) * | 1996-04-01 | 1999-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer |
US5814555A (en) * | 1996-06-05 | 1998-09-29 | Advanced Micro Devices, Inc. | Interlevel dielectric with air gaps to lessen capacitive coupling |
US5872058A (en) * | 1997-06-17 | 1999-02-16 | Novellus Systems, Inc. | High aspect ratio gapfill process by using HDP |
US6030881A (en) * | 1998-05-05 | 2000-02-29 | Novellus Systems, Inc. | High throughput chemical vapor deposition process capable of filling high aspect ratio structures |
Also Published As
Publication number | Publication date |
---|---|
US20060246736A1 (en) | 2006-11-02 |
US20060261435A1 (en) | 2006-11-23 |
US7125800B2 (en) | 2006-10-24 |
US20060001022A1 (en) | 2006-01-05 |
KR20020080474A (en) | 2002-10-23 |
WO2001067500A3 (en) | 2002-02-14 |
US6627549B2 (en) | 2003-09-30 |
US20010053612A1 (en) | 2001-12-20 |
AU2001249109A1 (en) | 2001-09-17 |
US20050023695A1 (en) | 2005-02-03 |
US20040061196A1 (en) | 2004-04-01 |
JP2007189236A (en) | 2007-07-26 |
US7235865B2 (en) | 2007-06-26 |
JP2004501503A (en) | 2004-01-15 |
KR100530296B1 (en) | 2005-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060246736A1 (en) | Methods for making nearly planar dielectric films in integrated circuits | |
US5790417A (en) | Method of automatic dummy layout generation | |
US5789313A (en) | Process for producing a semiconductor device with a planar top surface | |
JP2548888B2 (en) | Method for manufacturing semiconductor device | |
US5212114A (en) | Process for global planarizing of surfaces for integrated semiconductor circuits | |
CN100375267C (en) | Method for manufacturing semiconductor devices | |
US20100252907A1 (en) | Shallow Trench Isolation Dummy Pattern and Layout Method Using the Same | |
US5580826A (en) | Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern | |
EP0304077A2 (en) | Method of forming a fine pattern | |
US6232043B1 (en) | Rule to determine CMP polish time | |
US6448183B1 (en) | Method of forming contact portion of semiconductor element | |
KR100460064B1 (en) | Method for forming metal wiring of semiconductor device | |
JP2000012538A (en) | Manufacture of semiconductor device | |
US7279267B2 (en) | Method for manipulating the topography of a film surface | |
JPH04359544A (en) | Formation method of flat wiring layer | |
JPH0974136A (en) | Manufacture for semiconductor device | |
KR20010035659A (en) | A method of reducing capacitance in semiconductor devices | |
US6326310B1 (en) | Method and system for providing shallow trench profile shaping through spacer and etching | |
JPH0677182A (en) | Flattening method of rugged insulating film | |
KR20030049571A (en) | Method for forming metal line of semiconductor device using dual-damascene process | |
KR100756864B1 (en) | forming method of insulator for semiconductor device | |
KR20010063640A (en) | Method for forming interlayer dielectric of semiconductor device | |
JPH03151636A (en) | Flattening method for insulating film | |
JPH06252141A (en) | Manufacture of semiconductor device | |
JPH0225251B2 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027011717 Country of ref document: KR |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2001 566176 Kind code of ref document: A Format of ref document f/p: F |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027011717 Country of ref document: KR |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
WWG | Wipo information: grant in national office |
Ref document number: 1020027011717 Country of ref document: KR |