WO2001071325A3 - Calibration and alignment of x-ray reflectometric systems - Google Patents

Calibration and alignment of x-ray reflectometric systems Download PDF

Info

Publication number
WO2001071325A3
WO2001071325A3 PCT/US2001/007338 US0107338W WO0171325A3 WO 2001071325 A3 WO2001071325 A3 WO 2001071325A3 US 0107338 W US0107338 W US 0107338W WO 0171325 A3 WO0171325 A3 WO 0171325A3
Authority
WO
WIPO (PCT)
Prior art keywords
present
another aspect
calibration
ray
alignment
Prior art date
Application number
PCT/US2001/007338
Other languages
French (fr)
Other versions
WO2001071325A2 (en
Inventor
Louis N Koppel
Craig E Uhrich
Jon Opsal
Original Assignee
Therma Wave Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Therma Wave Inc filed Critical Therma Wave Inc
Publication of WO2001071325A2 publication Critical patent/WO2001071325A2/en
Publication of WO2001071325A3 publication Critical patent/WO2001071325A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials

Abstract

The present invention relates to the calibration and alignment of an X-ray reflectometry ('XRR') system for measuring thin films. An aspect of the present invention describes a method for accurately determining C0 for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.
PCT/US2001/007338 2000-03-16 2001-03-07 Calibration and alignment of x-ray reflectometric systems WO2001071325A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/527,389 US6453006B1 (en) 2000-03-16 2000-03-16 Calibration and alignment of X-ray reflectometric systems
US09/527,389 2000-03-16

Publications (2)

Publication Number Publication Date
WO2001071325A2 WO2001071325A2 (en) 2001-09-27
WO2001071325A3 true WO2001071325A3 (en) 2002-07-18

Family

ID=24101263

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/007338 WO2001071325A2 (en) 2000-03-16 2001-03-07 Calibration and alignment of x-ray reflectometric systems

Country Status (2)

Country Link
US (4) US6453006B1 (en)
WO (1) WO2001071325A2 (en)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6754305B1 (en) 1999-08-02 2004-06-22 Therma-Wave, Inc. Measurement of thin films and barrier layers on patterned wafers with X-ray reflectometry
US6408048B2 (en) 2000-03-14 2002-06-18 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6770886B1 (en) 2000-10-10 2004-08-03 Therma-Wave, Inc. Detector-shield assembly for X-ray reflectometric system
EP1336096B1 (en) * 2000-11-20 2008-10-08 PANalytical B.V. Device and method for the inspection of the condition of a sample by the use of radiation which is reflected from the sample onto a position-sensitive detector
US6744850B2 (en) 2001-01-11 2004-06-01 Therma-Wave, Inc. X-ray reflectance measurement system with adjustable resolution
US7062013B2 (en) * 2001-04-12 2006-06-13 Jordan Valley Applied Radiation Ltd. X-ray reflectometry of thin film layers with enhanced accuracy
US6895075B2 (en) * 2003-02-12 2005-05-17 Jordan Valley Applied Radiation Ltd. X-ray reflectometry with small-angle scattering measurement
US6947520B2 (en) * 2002-12-06 2005-09-20 Jordan Valley Applied Radiation Ltd. Beam centering and angle calibration for X-ray reflectometry
US6707056B2 (en) 2001-06-15 2004-03-16 Therma-Wave, Inc. Stage rotation system to improve edge measurements
GB0116825D0 (en) * 2001-07-10 2001-08-29 Koninl Philips Electronics Nv Determination of material parameters
US6507634B1 (en) 2001-09-19 2003-01-14 Therma-Wave, Inc. System and method for X-ray reflectometry measurement of low density films
US6680996B2 (en) * 2002-02-19 2004-01-20 Jordan Valley Applied Radiation Ltd. Dual-wavelength X-ray reflectometry
US20080246951A1 (en) * 2007-04-09 2008-10-09 Phillip Walsh Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces
US8564780B2 (en) * 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US7126131B2 (en) * 2003-01-16 2006-10-24 Metrosol, Inc. Broad band referencing reflectometer
US6711232B1 (en) 2003-04-16 2004-03-23 Kla-Tencor Technologies Corporation X-ray reflectivity measurement
RU2239178C1 (en) 2003-08-22 2004-10-27 Общество с ограниченной ответственностью "Институт рентгеновской оптики" Method for detecting presence of resilient deformations in mono-crystalline plates and device for realization of said method
US7023954B2 (en) * 2003-09-29 2006-04-04 Jordan Valley Applied Radiation Ltd. Optical alignment of X-ray microanalyzers
US7035375B2 (en) * 2003-11-05 2006-04-25 Jordan Valley Applied Radiation Ltd. X-ray scattering with a polychromatic source
US7068753B2 (en) * 2004-07-30 2006-06-27 Jordan Valley Applied Radiation Ltd. Enhancement of X-ray reflectometry by measurement of diffuse reflections
KR100568703B1 (en) * 2004-08-10 2006-04-07 삼성전자주식회사 Thickness measurement method of metal layer and thickness measurement apparatus using the same
US7511265B2 (en) * 2004-08-11 2009-03-31 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7663097B2 (en) * 2004-08-11 2010-02-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7399975B2 (en) * 2004-08-11 2008-07-15 Metrosol, Inc. Method and apparatus for performing highly accurate thin film measurements
US7282703B2 (en) * 2004-08-11 2007-10-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7804059B2 (en) * 2004-08-11 2010-09-28 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7120228B2 (en) * 2004-09-21 2006-10-10 Jordan Valley Applied Radiation Ltd. Combined X-ray reflectometer and diffractometer
US7600916B2 (en) * 2004-12-01 2009-10-13 Jordan Valley Semiconductors Ltd. Target alignment for X-ray scattering measurements
US7076024B2 (en) * 2004-12-01 2006-07-11 Jordan Valley Applied Radiation, Ltd. X-ray apparatus with dual monochromators
US7474732B2 (en) 2004-12-01 2009-01-06 Jordan Valley Applied Radiation Ltd. Calibration of X-ray reflectometry system
KR20060066799A (en) * 2004-12-14 2006-06-19 한국기초과학지원연구원 Simultaneous measurement of the integrated x-ray reflectivity for different orders of reflections by using continuous x-ray and apparatus for measurement thereof
US7804934B2 (en) 2004-12-22 2010-09-28 Jordan Valley Semiconductors Ltd. Accurate measurement of layer dimensions using XRF
US7139366B1 (en) * 2005-05-31 2006-11-21 Osmic, Inc. Two-dimensional small angle x-ray scattering camera
US7113566B1 (en) * 2005-07-15 2006-09-26 Jordan Valley Applied Radiation Ltd. Enhancing resolution of X-ray measurements by sample motion
KR101374308B1 (en) * 2005-12-23 2014-03-14 조르단 밸리 세미컨덕터즈 리미티드 Accurate measurement of layer dimensions using xrf
US7481579B2 (en) * 2006-03-27 2009-01-27 Jordan Valley Applied Radiation Ltd. Overlay metrology using X-rays
US20070274447A1 (en) * 2006-05-15 2007-11-29 Isaac Mazor Automated selection of X-ray reflectometry measurement locations
US7406153B2 (en) 2006-08-15 2008-07-29 Jordan Valley Semiconductors Ltd. Control of X-ray beam spot size
US20080129986A1 (en) 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
IL180482A0 (en) * 2007-01-01 2007-06-03 Jordan Valley Semiconductors Inspection of small features using x - ray fluorescence
US7680243B2 (en) * 2007-09-06 2010-03-16 Jordan Valley Semiconductors Ltd. X-ray measurement of properties of nano-particles
US7712960B2 (en) * 2008-02-26 2010-05-11 Uchicago Argonne, Llc Device for optimization of experimental parameters on synchrotron beam lines
US20090219537A1 (en) 2008-02-28 2009-09-03 Phillip Walsh Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US8153987B2 (en) * 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
JP5461924B2 (en) * 2009-08-28 2014-04-02 株式会社日立ハイテクサイエンス X-ray analyzer and X-ray analysis method
JP5367549B2 (en) * 2009-12-07 2013-12-11 株式会社東芝 Substrate measurement method
US8243878B2 (en) * 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
RU2419088C1 (en) * 2010-02-01 2011-05-20 Учреждение Российской академии наук Физический институт им. П.Н. Лебедева РАН (ФИАН) X-ray spectrometer
US8687766B2 (en) 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
WO2012042976A1 (en) * 2010-09-28 2012-04-05 三洋電機株式会社 Object detecting device and information acquiring device
US8437450B2 (en) 2010-12-02 2013-05-07 Jordan Valley Semiconductors Ltd. Fast measurement of X-ray diffraction from tilted layers
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US9347768B1 (en) * 2011-03-07 2016-05-24 J.A. Woollam Co., Inc In line ellipsometer system and method of use
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
US8781070B2 (en) 2011-08-11 2014-07-15 Jordan Valley Semiconductors Ltd. Detection of wafer-edge defects
US9390984B2 (en) 2011-10-11 2016-07-12 Bruker Jv Israel Ltd. X-ray inspection of bumps on a semiconductor substrate
US9389192B2 (en) 2013-03-24 2016-07-12 Bruker Jv Israel Ltd. Estimation of XRF intensity from an array of micro-bumps
KR20150004602A (en) * 2013-07-03 2015-01-13 삼성전자주식회사 Methods for Measuring Thickness of Object
US20150113367A1 (en) * 2013-10-17 2015-04-23 International Business Machines Corporation Image transitioning and error detection for online presentations
JP6025211B2 (en) * 2013-11-28 2016-11-16 株式会社リガク X-ray topography equipment
US9551677B2 (en) * 2014-01-21 2017-01-24 Bruker Jv Israel Ltd. Angle calibration for grazing-incidence X-ray fluorescence (GIXRF)
US9632043B2 (en) 2014-05-13 2017-04-25 Bruker Jv Israel Ltd. Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF
US9726624B2 (en) 2014-06-18 2017-08-08 Bruker Jv Israel Ltd. Using multiple sources/detectors for high-throughput X-ray topography measurement
US9829448B2 (en) 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
EP3239701B1 (en) * 2014-12-25 2019-05-15 Rigaku Corporation Grazing incidence x-ray fluorescence spectrometer and grazing incidence x-ray fluorescence analyzing method
US10324050B2 (en) * 2015-01-14 2019-06-18 Kla-Tencor Corporation Measurement system optimization for X-ray based metrology
US11867595B2 (en) 2019-10-14 2024-01-09 Industrial Technology Research Institute X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate
US11579099B2 (en) 2019-10-14 2023-02-14 Industrial Technology Research Institute X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate
FR3103897B1 (en) 2019-12-02 2022-04-01 Safran DEVICE AND METHOD FOR MEASURING ORIENTATION ANGLES OF AN X-RAY IMAGING SYSTEM
KR20220075021A (en) 2020-11-26 2022-06-07 삼성전자주식회사 Apparatus generating extreme ultraviolet(euv), manufacturing method of the same, and euv system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD144956A1 (en) * 1979-07-23 1980-11-12 Bernd Kaempfe METHOD FOR EVALUATING COATED MATERIALS
US5042951A (en) * 1989-09-19 1991-08-27 Therma-Wave, Inc. High resolution ellipsometric apparatus
US5412473A (en) * 1993-07-16 1995-05-02 Therma-Wave, Inc. Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices
US5619548A (en) * 1995-08-11 1997-04-08 Oryx Instruments And Materials Corp. X-ray thickness gauge
JP2001116705A (en) * 1999-10-20 2001-04-27 Rigaku Corp Method for calibrating intensity of x-rays in x-ray diffraction method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE144956C (en)
US4065211A (en) * 1976-03-01 1977-12-27 The United States Of America As Represented By The Secretary Of The Army Precision X-ray diffraction system incorporating a laser aligner
US4064440A (en) * 1976-06-22 1977-12-20 Roder Frederick L X-ray or gamma-ray examination device for moving objects
DE2727505A1 (en) * 1977-06-18 1979-01-04 Ibm Deutschland ROENTGEN FLUORESCENT ANALYSIS FOR THE EXAMINATION OF LAYERS NEAR THE SURFACE
US4727562A (en) * 1985-09-16 1988-02-23 General Electric Company Measurement of scatter in x-ray imaging
WO1992008104A1 (en) 1990-10-24 1992-05-14 Therma-Wave, Inc. Apparatus for generating surface topographical images
GB9216461D0 (en) * 1992-08-03 1992-09-16 Smith James A Eucentric goniometer or motion system
JPH07153692A (en) * 1993-11-30 1995-06-16 Toshiba Corp Method and equipment for making thin film grow on semiconductor substrate
JP2904055B2 (en) * 1995-05-30 1999-06-14 株式会社島津製作所 X-ray diffractometer
US6041098A (en) * 1997-02-03 2000-03-21 Touryanski; Alexander G. X-ray reflectometer
US5848122A (en) * 1997-03-25 1998-12-08 Advanced Technology Materials, Inc. Apparatus for rapid in-situ X-ray stress measurement during thermal cycling of semiconductor wafers
US5923720A (en) * 1997-06-17 1999-07-13 Molecular Metrology, Inc. Angle dispersive x-ray spectrometer
US6069934A (en) * 1998-04-07 2000-05-30 Osmic, Inc. X-ray diffractometer with adjustable image distance
US6389102B2 (en) * 1999-09-29 2002-05-14 Jordan Valley Applied Radiation Ltd. X-ray array detector
US6381303B1 (en) * 1999-09-29 2002-04-30 Jordan Valley Applied Radiation Ltd. X-ray microanalyzer for thin films

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD144956A1 (en) * 1979-07-23 1980-11-12 Bernd Kaempfe METHOD FOR EVALUATING COATED MATERIALS
US5042951A (en) * 1989-09-19 1991-08-27 Therma-Wave, Inc. High resolution ellipsometric apparatus
US5412473A (en) * 1993-07-16 1995-05-02 Therma-Wave, Inc. Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices
US5619548A (en) * 1995-08-11 1997-04-08 Oryx Instruments And Materials Corp. X-ray thickness gauge
JP2001116705A (en) * 1999-10-20 2001-04-27 Rigaku Corp Method for calibrating intensity of x-rays in x-ray diffraction method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 21 3 August 2001 (2001-08-03) *

Also Published As

Publication number Publication date
WO2001071325A2 (en) 2001-09-27
US20040218717A1 (en) 2004-11-04
US20040052330A1 (en) 2004-03-18
US20020110218A1 (en) 2002-08-15
US6453006B1 (en) 2002-09-17
US6987832B2 (en) 2006-01-17
US6643354B2 (en) 2003-11-04
US6768785B2 (en) 2004-07-27

Similar Documents

Publication Publication Date Title
WO2001071325A3 (en) Calibration and alignment of x-ray reflectometric systems
WO2000065331A3 (en) System for analyzing surface characteristics with self-calibrating capability
WO2004036164A3 (en) System and a method of measuring an optical path difference in a sensing interferometer
EP0150945A3 (en) Method and apparatus for measuring properties of thin materials
WO1998028661A3 (en) Optical height meter, surface-inspection device provided with such a height meter, and lithographic apparatus provided with the inspection device
WO2005093495A3 (en) Device for centring/clamping an ophthalmic spectacle lens, associated manual centring methods and automatic detection method
Davis et al. The Sydney University Stellar Interferometer—II. Commissioning Observations and Results
KR100568439B1 (en) Ellipsometer measuring instrument
CN112902841A (en) Size measurement sensor with deviation correction function
JPH07110966A (en) Method and apparatus for measurement of warp of substance
JPS63255608A (en) Method for calibrating dripping liquid droplet detector
JPS60142204A (en) Dimension measuring method of object
JPH08201029A (en) Method and device for measuring outer diameter of sectional body
JPH06307816A (en) Non-contact plate width measuring device
KR101850252B1 (en) Optical density analyzer
JPH03142305A (en) Surface roughness measuring instrument
JPH032402B2 (en)
CN110376846B (en) Focusing and leveling device, focusing and leveling method and photoetching equipment
SE9101398D0 (en) COMPENSATION DEVICE FOR HEIGHT ALIGNMENT INSTRUMENTS
JPH11132940A (en) Apparatus and method for measurement of birefringence
US6397014B1 (en) Optical device for indicating the position of a flexible web
JPH04194610A (en) Measuring device for wall thickness of tube-shaped material
RU2059201C1 (en) Device for check of dials
CN114166750A (en) Retroreflection luminosity measurement system
JPS62105002A (en) High-precision measuring method for center position of light

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP