WO2001076071A3 - High voltage cmos signal driver system and method - Google Patents

High voltage cmos signal driver system and method Download PDF

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Publication number
WO2001076071A3
WO2001076071A3 PCT/US2001/007395 US0107395W WO0176071A3 WO 2001076071 A3 WO2001076071 A3 WO 2001076071A3 US 0107395 W US0107395 W US 0107395W WO 0176071 A3 WO0176071 A3 WO 0176071A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin oxide
cmos device
gate
repression
degradation
Prior art date
Application number
PCT/US2001/007395
Other languages
French (fr)
Other versions
WO2001076071A2 (en
Inventor
Derwin W Mattos
Brian M Appold
Original Assignee
Philips Semiconductors Inc
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Semiconductors Inc, Koninkl Philips Electronics Nv filed Critical Philips Semiconductors Inc
Priority to DE60112566T priority Critical patent/DE60112566T2/en
Priority to JP2001573636A priority patent/JP2003529996A/en
Priority to EP01918444A priority patent/EP1277284B1/en
Publication of WO2001076071A2 publication Critical patent/WO2001076071A2/en
Publication of WO2001076071A3 publication Critical patent/WO2001076071A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00315Modifications for increasing the reliability for protection in field-effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008Arrangements for reducing power consumption
    • H03K19/0016Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Abstract

The system and method facilitates the transmission of relatively high voltage signals via a thin oxide gate CMOS device without an excessivelydetrimental electric field build up across the thin oxide layers forming a gatein a CMOS device. The high voltage CMOS thin oxide gate system andmethod provides a degradation repression bias voltage signal to the thin oxide gate of the CMOS device. The degradation repression bias voltage signal establishes a differential voltage potential between the source and draincomponents of the thin oxide gate output CMOS device and the gate component of the thin oxide gate output CMOS device. The degradation repression bias voltage signal is maintained at a level that prevents that excessively detrimental electric field stresses are not induced in oxide layersthat form the thin oxide gate in the output CMOS device. The System and method does not require additional power supplies or reference voltages and does not cause the thin gate oxide device to dissipate additional power in a static (non-switching) state.
PCT/US2001/007395 2000-03-30 2001-03-08 High voltage cmos signal driver system and method WO2001076071A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE60112566T DE60112566T2 (en) 2000-03-30 2001-03-08 CMOS SIGNAL DRIVER SYSTEM FOR HIGH VOLTAGES AND RELATED METHOD
JP2001573636A JP2003529996A (en) 2000-03-30 2001-03-08 High voltage CMOS signal driver system and method
EP01918444A EP1277284B1 (en) 2000-03-30 2001-03-08 High voltage cmos signal driver system and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/539,289 2000-03-30
US09/539,289 US6388470B1 (en) 2000-03-30 2000-03-30 High voltage CMOS signal driver with minimum power dissipation

Publications (2)

Publication Number Publication Date
WO2001076071A2 WO2001076071A2 (en) 2001-10-11
WO2001076071A3 true WO2001076071A3 (en) 2002-01-31

Family

ID=24150598

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/007395 WO2001076071A2 (en) 2000-03-30 2001-03-08 High voltage cmos signal driver system and method

Country Status (5)

Country Link
US (1) US6388470B1 (en)
EP (1) EP1277284B1 (en)
JP (1) JP2003529996A (en)
DE (1) DE60112566T2 (en)
WO (1) WO2001076071A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168794A (en) * 2001-11-30 2003-06-13 Canon Inc Radiant rays detecting element, radiant rays image pickup device, radiant rays detecting method and radiant rays image pickup method
US6897702B2 (en) * 2002-05-30 2005-05-24 Sun Microsystems, Inc. Process variation compensated high voltage decoupling capacitor biasing circuit with no DC current
US6864725B2 (en) * 2002-06-05 2005-03-08 Micron Technology, Inc. Low current wide VREF range input buffer
US6856168B2 (en) * 2002-08-12 2005-02-15 Broadcom Corporation 5 Volt tolerant IO scheme using low-voltage devices
US7061298B2 (en) * 2003-08-22 2006-06-13 Idaho Research Foundation, Inc. High voltage to low voltage level shifter
US7737734B1 (en) * 2003-12-19 2010-06-15 Cypress Semiconductor Corporation Adaptive output driver
US7312626B2 (en) * 2005-08-31 2007-12-25 Micron Technology, Inc. CMOS circuits with reduced crowbar current
US7596326B2 (en) * 2005-10-27 2009-09-29 Emcore Corporation Distortion cancellation circuitry for optical receivers
US20100149884A1 (en) * 2008-11-11 2010-06-17 Stmicroelectronics Pvt. Ltd. Reduction of power consumption in a memory device during sleep mode of operation
TWI374611B (en) * 2009-04-03 2012-10-11 Univ Nat Sun Yat Sen I/o buffer with twice supply voltage tolerance using normal supply voltage devices
GB2469634B (en) * 2009-04-20 2015-11-11 Advanced Risc Mach Ltd Input-output device protection
US10574222B1 (en) * 2019-05-08 2020-02-25 PsiQuantum Corp. High speed high voltage drivers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465054A (en) * 1994-04-08 1995-11-07 Vivid Semiconductor, Inc. High voltage CMOS logic using low voltage CMOS process
US5528190A (en) * 1994-10-03 1996-06-18 Delco Electronics Corporation CMOS input voltage clamp
US5815354A (en) * 1997-03-21 1998-09-29 International Business Machines Corporation Receiver input voltage protection circuit
US5986472A (en) * 1997-06-06 1999-11-16 International Business Machines Corporation Voltage level translation for an output driver system with a bias generator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635861A (en) * 1995-05-23 1997-06-03 International Business Machines Corporation Off chip driver circuit
US5736887A (en) * 1996-01-25 1998-04-07 Rockwell International Corporation Five volt tolerant protection circuit
US5914617A (en) * 1996-12-23 1999-06-22 Lsi Logic Corporation Output driver for sub-micron CMOS
US6031394A (en) * 1998-01-08 2000-02-29 International Business Machines Corporation Low voltage CMOS circuit for on/off chip drive at high voltage
US6028450A (en) * 1998-03-17 2000-02-22 Xilinx, Inc. Programmable input/output circuit with pull-up bias control

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465054A (en) * 1994-04-08 1995-11-07 Vivid Semiconductor, Inc. High voltage CMOS logic using low voltage CMOS process
US5528190A (en) * 1994-10-03 1996-06-18 Delco Electronics Corporation CMOS input voltage clamp
US5815354A (en) * 1997-03-21 1998-09-29 International Business Machines Corporation Receiver input voltage protection circuit
US5986472A (en) * 1997-06-06 1999-11-16 International Business Machines Corporation Voltage level translation for an output driver system with a bias generator

Also Published As

Publication number Publication date
JP2003529996A (en) 2003-10-07
EP1277284A2 (en) 2003-01-22
US6388470B1 (en) 2002-05-14
EP1277284B1 (en) 2005-08-10
DE60112566T2 (en) 2006-06-14
WO2001076071A2 (en) 2001-10-11
DE60112566D1 (en) 2005-09-15

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