WO2001078124A1 - Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus - Google Patents

Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus Download PDF

Info

Publication number
WO2001078124A1
WO2001078124A1 PCT/KR2001/000586 KR0100586W WO0178124A1 WO 2001078124 A1 WO2001078124 A1 WO 2001078124A1 KR 0100586 W KR0100586 W KR 0100586W WO 0178124 A1 WO0178124 A1 WO 0178124A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
conditioner
polishing pad
pad
wafer
Prior art date
Application number
PCT/KR2001/000586
Other languages
French (fr)
Inventor
Nam-Chul Paek
Kyu-Hong Lee
Original Assignee
Semicontech Corporation
Genitech Incorporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semicontech Corporation, Genitech Incorporation filed Critical Semicontech Corporation
Publication of WO2001078124A1 publication Critical patent/WO2001078124A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

It is described that conditioner and conditioning process for polishing pad which has a various kind, property and state in chemical mechanical polishing. Conditioner moves up and down by a pneumatic mechanism independently. It is installed directly in polishing head and it has an annular type. In addition, it is run in-situ. Therefore, it can increase a surface roughness of polishing pad effectively. It can condition effectively a polishing pad by an increasing pressure. As a result, it warrants a repeatability of a polishing speed by raising a life and characteristic of a polishing pad and it is expected that all of pad surface is uniform.

Description

CONDITIONER AND CONDITIONING PROCESS FOR POLISHING PAD
OF CHEMICAL MECHANICAL POLISHING APPARATUS
TECHNICAL FIELD
The present invention relates to a conditioner and a conditioning method of a chemical mechanical polishing apparatus for flattening a semiconductor wafer, and more particularly to a conditioner of a chemical and mechanical polishing apparatus which is mounted to a polishing head to efficiently improve the surface roughness of a polishing pad and can be moved upwardly and downwardly independently and a conditioning method using the same.
BACKGROUND ART
As a semiconductor chip is highly integrated, the number of the processes for masking, etching, forming an insulating layer, and forming a metal wire to manufacture a semiconductor wafer is increased. Especially, in order to maintain the efficiency and the accuracy of a conductive structure layer in a semiconductor integrated circuit which needs the high preciseness, one surface of the semiconductor wafer should be flattened. Especially, as the size of the integrated circuit is minimized and a multiplayer metal wire is used, the surface of the wafer should be highly flattened. Therefore, a device for polishing and flattening the surface of the wafer is needed. In order to settle the above-mentioned problem, a flattening technology which uses a chemical mechanical polishing (hereinafter, referred to as CMP) device is widely used. Generally, a polishing device comprises a polishing head to which a wafer is mounted, a polishing head which makes contact with a polishing surface of a wafer, a platen to which a polishing pad is attached, and a device for supplying a polishing liquid between the polishing pad and the polishing surface of a wafer. The polishing pad makes contact with the wafer by applying a pressure to the wafer and a polishing liquid is supplied therebetween, and the wafer is polished by revolving the polishing head or rotating the platen.
Dry foam generating bodies such as IC and GS series (trademarks) of Rodel company is mainly used as the polishing head. The polishing head comprises a surface foam. The surface foam supplies the polishing liquid to the front surface of the wafer and acts as a passage for discharging the reactants generated by the surface reaction of the polishing liquid and the wafer.
The dry foam generating material pad in which foams are formed on the surface thereof is not easily removed after the initial polishing process is proceeded, and influences the next processes. Especially, in the CMP for flattening the oxidation layer, the polishing liquid particles and the reactants exist in the foams, and the glazing phenomenon is generated on the surface of the pad. During the polishing process, the pad is deformed by the load applied to the wafer, and the size of the deformation is determined by the applied load and the property of the pad. If the pad is deformed, the surface roughness of the pad is decreased and the contacting area between the water and the pad is increased and the pressure applied to the polishing surface is reduced. Further, due to the reduction of the surface roughness of the pad, the supply passage of the polishing liquid is reduced and thus the polishing speed is reduced. Therefore, a method for improving the life of the pad and the property of the pad to guarantee the reproduction of the polishing speed is needed. In order to settle the above-mentioned problem, in the conventional polishing process, a pad conditioner is provided and the pad conditioning which processes the surface of the pad is performed. However, in the conventional technology, the pad conditioning irrelevant to the kind and the property of the polishing pad has been performed and the reproduction of the polishing speed is not sufficiently guaranteed.
In order to settle the above-mentioned problem, in U.S. Patent No. 5,885,137, a flexible membrane to which a conditioning part is mounted to regulate the profile of the polishing pad surrounds a cavity and the pressure in the cavity is regulated to vary the position of the flexible membrane with respect to the polishing pad.
However, since the technology uses the flexible membrane, as the pressure in the cavity is varied, the flexible is protruded to the outside of the cavity or is introduced into the cavity, thereby destroying the flexible membrane.
DISCLOSURE OF INVENTION
Therefore, one object of the present invention is to provide a pad conditioner and a conditioning method which can perform a pad conditioning which is suitable for the kind, the property, and the state of various polishing pads .
Another object of the present invention is to provide a pad conditioner which has a strong durability.
The conditioner according to the present invention is applied to a conventional chemical mechanical polishing device which includes a polishing pad for mounting a semiconductor wafer, a polishing pad for polishing a polishing surface of the wafer, a platen to which the polishing pad is attached, and a device for supplying the polishing liquid between the polishing pad and the polishing surface of the wafer. The conditioner according to the present invention includes a conditioner base for determining the position of the conditioner with respect to the polishing pad, a conditioner guide which guides the movement of the conditioner base and forms a cavity together with the conditioner base, and an air supplying means which supplies the amount of the air which is varied in the cavity to transfer the varying pneumatic pressure to the conditioner base. The conditioner according to the present invention is mounted to the polishing head.
It is preferable that the conditioner can be moved with respect to the polishing head independently of the polishing head.
On the other hand, the conditioning method according to the present invention uses the conditioner according to the present invention, and comprises the steps of mounting the wafer to the polishing head, approaching the platen to which the polishing pad is attached towards the wafer, transferring the varying pneumatic pressure to the conditioner base by using the air supplying means of the conditioner and making the conditioner contact with the polishing pad, and moving the polishing head to vary the position of the polishing head with respect to the platen. In the method according to the present invention, the contacting step of the conditioner can be proceeded during the polishing process or after the polishing process .
Hereinafter, preferred embodiments of the present invention will be explained in detain with reference to the attached drawings.
FIG. 1 is a cross-sectional view for showing a CMP device to which a conditioner according to a preferred embodiment of the present invention is mounted. Referring to FIG. 1, a semiconductor wafer 105 to be polished is attached to the lower portion of a polishing head 100. A polishing pad 122 for polishing the wafer 105 is positioned on a platen 120. A slurry 118 is supplied between the wafer 105 and the polishing pad 122. A conditioner 110 which comprises a conditioner guide 112, a conditioner base 114, and a pneumatic line connecting section 116 is mounted to the polishing head 100. The air introduced in the arrow direction through the pneumatic line connecting section 116 is moved to a space C between the conditioner guide 112 and the conditioner base 114, and the position of the conditioner base 114 is variably regulated through the change of the pressure. The conditioner 110 is mounted to the polishing head 100, and is moved upwardly and downwardly by the pneumatic pressure with respect to the polishing pad 122. In U.S Patent No. 5,885,137, a portion to which a conditioning part which makes contact with the polishing pad comprises the flexible membrane and the conditioning strength is regulated through the inflating and the shrinking of the flexible membrane. However, in the preferred embodiment of the present invention, the conditioner 110 itself is moved upwardly and downwardly to regulate the conditioning strength. Therefore, the damage of the flexible membrane is prevented.
Hereinafter, the conditioning method which uses the above-mentioned device will be explained. A semiconductor wafer 105 is absorbed and fixed to the lower portion of the polishing head 100 by a loading device (not shown) . Thereafter, a platen 120 to which the polishing pad 122 is attached is vertically raised, and the polishing pad 122 makes contact with the wafer 105. Thereafter, the conditioner 110 mounted to the polishing head 100 is moved downwardly by the pneumatic pressure and makes contact with the polishing pad 122. In the polishing step, the polishing head 100 is revolved or the platen 120 is rotated to polish the wafer 105. The conditioner 110 applies the pressure with a pneumatic control mechanism to apply a contacting force according to the kind and the surface property of the polishing pad. The polishing pad 122 can be conditioned during or after the polishing of the wafer 105 by using the conditioner 110 which can be moved upwardly and downwardly. According to the conditioner and the conditioning method of the present invention, since the conditioner has a pneumatic control mechanism, the polishing pad is conditioned by applying a pressure suitably for the kind and the property of the polishing pad. Therefore, the lifer and the property of the polishing pad is improved, and the reproduction of the polishing speed is guaranteed. Further, since the conditioner itself is moved, the damage of the flexible membrane is prevented.
While this invention has been particularly shown and described with reference to particular embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be effected therein without departing from the spirit and scope of the invention as defined by the appended claims.
BRIEF DESCRIPTION OF DRAWINGS
This invention will be better understood and its various objects and advantages will be more fully appreciated from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a cross-sectional view for showing a CMP device to which a conditioner according to a preferred embodiment of the present invention is mounted.

Claims

1. A device for conditioning a polishing pad in a chemical mechanical polishing device which includes a polishing pad for mounting a semiconductor wafer, a polishing pad for polishing a polishing surface of the wafer, a platen to which the polishing pad is attached, and a device for supplying a polishing liquid between the polishing pad and the polishing surface of the wafer, which comprises: a conditioner base for determining the position of the conditioner with respect to the polishing pad; a conditioner guide which guides the movement of the conditioner base and forms a cavity together with the conditioner base; and an air supplying means which supplies the amount of the air in the cavity so that a variable pneumatic pressure is transferred to the conditioner base, wherein the conditioner is mounted to the polishing head.
2. A conditioner according to claim 1, wherein the conditioner can be moved with respect to the polishing pad independently of the polishing pad.
3. A method for conditioning the polishing pad by using the conditioner of claim 1, which comprises the steps of: mounting the wafer to the polishing pad; approaching the platen to which the polishing pad is attached to the wafer; making the conditioner contact with the polishing pad by transferring the variable pneumatic pressure to the conditioner base by the air supplying means of the conditioner; and moving the polishing pad so that the relative position of the polishing head with respect to the platen is varied.
4. A method according to claim 3, wherein the contacting step of the conditioner is proceeded during or after the polishing process.
PCT/KR2001/000586 2000-04-12 2001-04-09 Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus WO2001078124A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2000-19263 2000-04-12
KR1020000019263A KR100332363B1 (en) 2000-04-12 2000-04-12 Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus

Publications (1)

Publication Number Publication Date
WO2001078124A1 true WO2001078124A1 (en) 2001-10-18

Family

ID=19663846

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2001/000586 WO2001078124A1 (en) 2000-04-12 2001-04-09 Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus

Country Status (2)

Country Link
KR (1) KR100332363B1 (en)
WO (1) WO2001078124A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7863163B2 (en) 2005-12-22 2011-01-04 Asm America, Inc. Epitaxial deposition of doped semiconductor materials
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
CN108161711A (en) * 2017-12-28 2018-06-15 德淮半导体有限公司 Grinding wafer device and grinding head
CN113319734A (en) * 2021-07-06 2021-08-31 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） Chemical polishing apparatus and method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100744257B1 (en) 2005-12-28 2007-07-30 동부일렉트로닉스 주식회사 Carrier head of a chemical-mechanical polisher

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09141550A (en) * 1995-11-22 1997-06-03 Sony Corp Sheet-like substrate polishing method and polishing device therefor
JPH1058315A (en) * 1996-08-20 1998-03-03 Sony Corp Polishing device and polishing method
JP2000153448A (en) * 1998-11-19 2000-06-06 Toshiba Mach Co Ltd Plane polishing method
JP2000354958A (en) * 1999-06-14 2000-12-26 Toshiba Corp Work polishing device, work polishing method and manufacture for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09141550A (en) * 1995-11-22 1997-06-03 Sony Corp Sheet-like substrate polishing method and polishing device therefor
JPH1058315A (en) * 1996-08-20 1998-03-03 Sony Corp Polishing device and polishing method
JP2000153448A (en) * 1998-11-19 2000-06-06 Toshiba Mach Co Ltd Plane polishing method
JP2000354958A (en) * 1999-06-14 2000-12-26 Toshiba Corp Work polishing device, work polishing method and manufacture for semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7102235B2 (en) 1999-10-15 2006-09-05 Asm International N.V. Conformal lining layers for damascene metallization
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
US7687383B2 (en) 2005-02-04 2010-03-30 Asm America, Inc. Methods of depositing electrically active doped crystalline Si-containing films
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US9190515B2 (en) 2005-02-04 2015-11-17 Asm America, Inc. Structure comprises an As-deposited doped single crystalline Si-containing film
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
US7863163B2 (en) 2005-12-22 2011-01-04 Asm America, Inc. Epitaxial deposition of doped semiconductor materials
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US9312131B2 (en) 2006-06-07 2016-04-12 Asm America, Inc. Selective epitaxial formation of semiconductive films
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7897491B2 (en) 2007-12-21 2011-03-01 Asm America, Inc. Separate injection of reactive species in selective formation of films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
CN108161711A (en) * 2017-12-28 2018-06-15 德淮半导体有限公司 Grinding wafer device and grinding head
CN113319734A (en) * 2021-07-06 2021-08-31 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） Chemical polishing apparatus and method
CN113319734B (en) * 2021-07-06 2023-05-26 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） Chemical polishing apparatus and method thereof

Also Published As

Publication number Publication date
KR100332363B1 (en) 2002-04-12
KR20010095842A (en) 2001-11-07

Similar Documents

Publication Publication Date Title
US6165056A (en) Polishing machine for flattening substrate surface
US7357695B2 (en) Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US6579151B2 (en) Retaining ring with active edge-profile control by piezoelectric actuator/sensors
WO2001078124A1 (en) Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus
US6533893B2 (en) Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
US5769691A (en) Methods and apparatus for the chemical mechanical planarization of electronic devices
US7121921B2 (en) Methods for planarizing microelectronic workpieces
JP2001129754A (en) Method and device for measuring pad profile, and closed loop control for pad conditioning process
US6722949B2 (en) Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using
US6758726B2 (en) Partial-membrane carrier head
US6267643B1 (en) Slotted retaining ring for polishing head and method of using
JP7374710B2 (en) Polishing method and polishing device
US6648731B2 (en) Polishing pad conditioning apparatus in chemical mechanical polishing apparatus
US6443810B1 (en) Polishing platen equipped with guard ring for chemical mechanical polishing
KR20010071353A (en) Dual cmp pad conditioner
JP2001113457A (en) Chemical mechanical polishing method and manufacturing method of semiconductor integrated circuit device
JP2002096261A (en) Substrate holding device and polishing device provided with the same
KR20060038740A (en) Chemical mechanical polishing apparatus and method
JP2002018709A (en) Wafer polishing device
JP2002217141A (en) Polishing method, polishing apparatus, manufacturing method of semiconductor device and semiconductor device
KR100494128B1 (en) Polishing pad conditioner in chemical mechanical polishing apparatus
US11679468B2 (en) Chemical-mechanical polishing system and method
JPH09155721A (en) Polishing device
KR100548555B1 (en) Chemical mechanical polishing apparatus
JP2022526214A (en) Board carrier head and processing system

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP