WO2001086730A2 - Optoelektronisches bauelement und verfahren zur herstellung - Google Patents
Optoelektronisches bauelement und verfahren zur herstellung Download PDFInfo
- Publication number
- WO2001086730A2 WO2001086730A2 PCT/DE2001/001820 DE0101820W WO0186730A2 WO 2001086730 A2 WO2001086730 A2 WO 2001086730A2 DE 0101820 W DE0101820 W DE 0101820W WO 0186730 A2 WO0186730 A2 WO 0186730A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- optical element
- resin
- epoxy resin
- transparent
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 34
- 239000012790 adhesive layer Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 229920003023 plastic Polymers 0.000 claims description 17
- 239000004033 plastic Substances 0.000 claims description 15
- 238000005304 joining Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 8
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002318 adhesion promoter Substances 0.000 claims description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 238000007373 indentation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 4
- 150000001768 cations Chemical class 0.000 claims 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- 239000012778 molding material Substances 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- 229920005749 polyurethane resin Polymers 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 abstract description 14
- 239000000853 adhesive Substances 0.000 abstract description 13
- 239000011342 resin composition Substances 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- -1 Sulfonium salts Chemical class 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical class [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Definitions
- the invention relates to an optoelectronic component with a carrier body on which an optoelectronic transmitter or receiver is arranged, with a transparent layer applied over and encapsulating the transmitter or receiver, and with an optical element arranged over the transparent layer.
- Such a component is known for example from DE 19755734 AI.
- An SMD-mountable optoelectronic component is described there, which is constructed on a carrier body provided with a recess.
- the optoelectronic transmitter or receiver is arranged in the recess and encapsulated with an optically adapted transparent plastic layer.
- a lens is arranged above the transparent plastic layer and in direct contact with it, with the aid of which the incidence of light or the light emission of the component is controlled.
- a transparent potting compound is used for the plastic layer, the lens being placed on the plastic layer before this potting compound has completely hardened. When the sealing compound cures, there is both good optical contact and good adhesion between the plastic layer and the optical lens.
- the object of the present invention is therefore to provide an optoelectronic component in which an optical element such as, for example, a lens can be easily and securely aligned and fixed.
- the invention proposes to glue the optical element onto a transparent layer with the aid of the adhesive layer made of a one-component resin. With the help of the invention, it is possible to use the transparent layer
- Harden plastic layer independently of the optical element and, if necessary, treat its surface.
- the one-component resin of the adhesive layer enables the optical element to be easily applied to the transparent layer.
- a UV or light-initiated cationically hardened epoxy resin is preferably used as the adhesive layer.
- Resins with this hardening mechanism have the advantage that they go into a gel phase in a rapid light- or UV-initiated process, which already allows a pre-fixation.
- a quick fixation of the parts to be glued is made possible.
- a complete hardening of the pre-fixed parts can then be carried out in a further step without additional
- the hardening can take place within a few seconds. It is even possible to stimulate the hardening only with the help of a light or UV flash. This is sufficient to fix the parts to be bonded so tightly that during the complete hardening, which leads to any later Time can take place, the alignment of the parts to be glued is maintained relative to each other. This enables the parts to be glued to be fixed quickly and precisely, which is particularly important in optical systems.
- the rapid curing of the cationically curing resin has the further advantage that it can be carried out at any temperature which can be selected with regard to the later use of the adhesive bond and in particular with regard to the subsequent operating temperature of the optoelectronic component.
- the radiation-induced precuring of the adhesive layer is preferably carried out at the lowest possible temperatures, in particular at temperatures up to 60 ° C. In this way, thermal stresses can be avoided, which can be introduced into the bond due to thermal expansion during hardening at elevated temperature.
- a stress-reduced bond is also characterized by increased stability and can be produced in a reproducible manner. Depending on an existing thermomechanical tension
- Material properties can be set constantly and reproducibly. This means that the complete hardening can also be carried out at any later point in time.
- the chemical and geometrical structure of the adhesive layer is also selected so that the adhesive layer under temperature, moisture and radiation exposure, which is to be taken into account more intensively in the case of the optoelectronic component, is neither yellowed nor cloudy and is mechanically and mechanically cloudy Properties deteriorated. This also ensures that neither the luminous efficiency is reduced nor the radiation characteristic of the optoelectronic component is changed.
- the mechanical strength of the adhesive layer is also not reduced by the loads mentioned. It can thus be ensured that the functionality during manufacture, qualification and during the entire operating time or lifespan of the usual ten years for LEDs.
- the adhesive layer and thus the optoelectronic component or the LED meet the demanding qualification requirements for the automotive sector.
- the adhesive and thus also the adhesive connection is sufficiently temperature-stable and withstands solder bath conditions which are important for the SMD
- the hardened adhesive layer can be set to a refractive index n__ of more than 1.50. It is therefore optically optimally matched to the optical molding compositions which are preferably used and which are preferably used for the optical element.
- the adhesive layer when irradiated by means of UV or visible light through the parts to be bonded, so that (hardening) hardening occurs uniformly everywhere. This can be achieved even with low irradiation powers of less than 100 mW / cm 2 .
- the resin can be rheologically adapted so that micro-dosing at 60 ° C with dosing tolerances of ⁇ +/- 3% is possible, so that the adhesive layer can be applied precisely and reproducibly in a thin layer thickness of, for example, up to 100 ⁇ m. whereby good adhesive properties of the adhesive connection are obtained.
- the adhesive process is designed so that it can be carried out in large-scale, highly automated production with high throughput numbers. This is achieved in particular through the rapid hardening times with which the lens can be fixed on the plastic layer.
- liquid epoxy resin system which can have the following general composition, given in percent by weight:
- Adhesion promoter organofunctional alkoxy-siloxanes 0 - 5% leveling agents, preferably based on silicone or acrylate 0 - 1%
- Deaerator preferably based on silicone or acrylate 0 - 1% catalyst for UN-initiated cationic hardening 0.1 - 2%
- UNI6974 (CIBA SC) is used as the photoinitiator for cationic curing.
- Initiators for a cationically initiated thermal curing can also be used for the subsequent thermal curing.
- Halonium and onium salts of sulfur are preferred (Sulfonium salts) used.
- a suitable thermal initiator is, for example, S-benzylthiolanium hexafluoroantimonate (Aldrich).
- Figure 1 is a schematic sectional view of a first embodiment of a component according to the invention.
- FIGS. 2a and 2b show a schematic sectional illustration or a detailed view of a second exemplary embodiment of a component according to the invention.
- the basic body for the component shown in FIG. 1 is formed by extrusion-coating a conductor strip 2 with a high-temperature thermoplastic to form a housing 3.
- the housing has a recess in the middle, in which the optical transmitter or receiver is arranged and electrically connected to the conductor strip from which the SMD-capable contacts are made.
- the recess in the housing preferably has inclined side surfaces 4, which can therefore serve as a reflector for the optoelectronic component.
- the latter After assembly and contacting of the optical transmitter or receiver 1 in the recess, the latter is filled with a flowable casting compound, and this is then cured to form a plastic layer 5 encapsulating the transmitter or receiver.
- a thin layer 6 of a UV-initiated, cationically curing epoxy resin is then applied to the plastic layer 5 in a layer thickness of, for example, 90 ⁇ m applied.
- the optical lens 7 is then placed on this resin layer 6, which later forms the adhesive layer, as an optical element, aligned and, if necessary, briefly fixed in the exact position.
- Structures 8 are preferably formed on the joining surface of the optical element, which enable better mechanical interlocking of the surfaces to be bonded. These can be, for example, pins, knobs or similarly shaped projections or indentations. A sawtooth-like topology in cross section is also possible. Such structures can for example be molded onto the joining surface.
- the lens or generally the optical element on the joining side can have a surface topology, not shown, which deviates from a flat surface. In particular, this can be a defined roughness or ripple.
- spacer elements or spacers between the joining surfaces can be part of one of the joining surfaces and, for example, molded onto the optical element.
- the lens itself can also have a plane-parallel or a concave radiation surface and different radii of curvature for the targeted adjustment of the radiation characteristic.
- the entire arrangement is exposed to UV radiation from above for a short time, for example a UV flash.
- a short time for example a UV flash.
- the optical lens 7 is sufficiently fixed on the plastic layer 5 and the adhesive layer 6 is sufficiently hardened.
- the adhesive layer 6 is then fully cured, for example for two hours at a temperature of 120 ° C.
- compositions given in parts by weight are selected for the UV-initiated, cationically curing epoxy resin used according to the invention.
- Epoxynovolak D.E.N. 438 10.0 pbw BYKA506 0.4 pbw
- the two epoxy resin compositions a and b optoelectronic components with adhesive layers are obtained which, under the possible conditions of use of the component, are so stable against exposure to temperature, moisture and radiation that they show no yellowing, clouding or other changes which reduce the light output or could change the radiation pattern.
- the resin compositions can be hardened within a few seconds and show sufficient adhesive strength after complete hardening. They survive solder bath conditions of 3 x 260 ° C without damage and without reducing the thermomechanical properties of the adhesive layer.
- Another modification not described in the exemplary embodiments, relates to the addition of a certain amount Vinyl ethers, with the help of which the hardening time can be shortened further. This makes it possible to accelerate the hardening and thus to further increase the throughput in the production of the optoelectronic components.
- the other components can also be selected so that they are optimally adapted optically to the plastic layer, so that no optical losses during the transition from the plastic layer to the adhesive layer or during the transition from the adhesive layer to the lens have to be accepted.
- FIG. 1 A further exemplary embodiment of a component according to the invention is shown schematically in section in FIG.
- the lens 7 has a chamfer 9 on the joining side, so that the adhesive gap widens towards the edge of the component.
- This chamfer 9 can also be designed, for example, as a peripheral bevel on the joining side of the optical element.
- This shape creates a reservoir for excess
- Glue created.
- the edge of the adhesive forms a fillet 10 due to its surface tension, as is shown in more detail in the detailed view in FIG. 2b. This advantageously reduces the risk of excess adhesive getting on the side walls of the housing. The requirements for the dosing accuracy of the adhesive are also reduced.
- peg-like structures 8 are formed, which act as spacers between the lens
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01947151A EP1281205B1 (de) | 2000-05-12 | 2001-05-11 | Optoelektronisches bauelement und verfahren zur herstellung |
DE50113565T DE50113565D1 (de) | 2000-05-12 | 2001-05-11 | Optoelektronisches bauelement und verfahren zur herstellung |
US10/275,786 US7455461B2 (en) | 2000-05-12 | 2001-05-11 | Optoelectronic component and method for the production thereof |
JP2001582847A JP5273892B2 (ja) | 2000-05-12 | 2001-05-11 | オプトエレクトロニック素子及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10023353A DE10023353A1 (de) | 2000-05-12 | 2000-05-12 | Optoelektronisches Bauelement und Verfahren zur Herstellung |
DE10023353.8 | 2000-05-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001086730A2 true WO2001086730A2 (de) | 2001-11-15 |
WO2001086730A3 WO2001086730A3 (de) | 2002-06-27 |
Family
ID=7641836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/001820 WO2001086730A2 (de) | 2000-05-12 | 2001-05-11 | Optoelektronisches bauelement und verfahren zur herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7455461B2 (de) |
EP (1) | EP1281205B1 (de) |
JP (1) | JP5273892B2 (de) |
CN (1) | CN1328798C (de) |
DE (2) | DE10023353A1 (de) |
TW (1) | TW525304B (de) |
WO (1) | WO2001086730A2 (de) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004040031A (ja) * | 2002-07-08 | 2004-02-05 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
WO2004027880A2 (en) * | 2002-09-17 | 2004-04-01 | Koninklijke Philips Electronics N.V. | Camera device, method of manufacturing a camera device, wafer scale package |
FR2861217A1 (fr) * | 2003-10-21 | 2005-04-22 | St Microelectronics Sa | Dispositif optique pour boitier semi-conducteur optique et procede de fabrication. |
EP1659642A1 (de) * | 2003-08-26 | 2006-05-24 | Sumitomo Electric Industries, Ltd. | Halbleiter-lichtemissionsbauelement-anbringglied, leuchtdioden-konstituierungsglied damit und leuchtdiode damit |
WO2006114082A2 (de) * | 2005-04-26 | 2006-11-02 | Osram Opto Semiconductors Gmbh | Optisches bauteil, optoelektronisches bauelement mit dem bauteil und dessen herstellung |
JP2007517388A (ja) * | 2003-12-30 | 2007-06-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電モジュールおよびその製造方法 |
JP2007531320A (ja) * | 2004-03-31 | 2007-11-01 | クリー インコーポレイテッド | 発光デバイスをパッケージングする方法およびパッケージングされた発光デバイス |
EP1956662A2 (de) * | 2007-02-09 | 2008-08-13 | Sin Guang Li International Co., Ltd. | Gekapseltes Solarmodul mit Linse |
US7453653B2 (en) | 2004-09-14 | 2008-11-18 | Omnivision Cdm Optics, Inc. | Low height imaging system and associated methods |
EP1544924A3 (de) * | 2003-12-19 | 2010-03-31 | Philips Lumileds Lighting Company LLC | Leuchtdioden-Verpackungsanordnung |
US9224924B2 (en) | 2011-09-30 | 2015-12-29 | Osram Opto Semiconductors Gmbh | Optoelectronic component including an adhesive layer and method for producing the same |
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DE10118231A1 (de) | 2001-04-11 | 2002-10-17 | Heidenhain Gmbh Dr Johannes | Optoelektronische Baulelmentanordnung und Verfahren zur Herstellun einer oploelektronischen Bauelementanordnung |
DE10129785B4 (de) | 2001-06-20 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
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US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
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JP4828226B2 (ja) * | 2005-12-28 | 2011-11-30 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
AT503027B1 (de) * | 2006-05-08 | 2007-07-15 | Austria Tech & System Tech | Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter |
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DE102007021904A1 (de) * | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Optoelektronische Vorrichtung mit Gehäusekörper |
DE102007016904B4 (de) * | 2007-04-10 | 2014-11-20 | Osram Gmbh | Verfahren zur Herstellung einer optoelektronischen Vorrichtung |
JP5405731B2 (ja) * | 2007-10-23 | 2014-02-05 | 日立コンシューマエレクトロニクス株式会社 | 光源モジュール |
US7539366B1 (en) | 2008-01-04 | 2009-05-26 | International Business Machines Corporation | Optical transceiver module |
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JP2009302221A (ja) | 2008-06-12 | 2009-12-24 | Nec Electronics Corp | 電子装置及びその製造方法 |
JP2010171379A (ja) * | 2008-12-25 | 2010-08-05 | Seiko Instruments Inc | 発光デバイス |
DE102010024545B4 (de) | 2010-06-22 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
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JP2004040031A (ja) * | 2002-07-08 | 2004-02-05 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
WO2004027880A2 (en) * | 2002-09-17 | 2004-04-01 | Koninklijke Philips Electronics N.V. | Camera device, method of manufacturing a camera device, wafer scale package |
WO2004027880A3 (en) * | 2002-09-17 | 2005-01-13 | Koninkl Philips Electronics Nv | Camera device, method of manufacturing a camera device, wafer scale package |
EP1659642A4 (de) * | 2003-08-26 | 2011-07-06 | Sumitomo Electric Industries | Halbleiter-lichtemissionsbauelement-anbringglied, leuchtdioden-konstituierungsglied damit und leuchtdiode damit |
EP1659642A1 (de) * | 2003-08-26 | 2006-05-24 | Sumitomo Electric Industries, Ltd. | Halbleiter-lichtemissionsbauelement-anbringglied, leuchtdioden-konstituierungsglied damit und leuchtdiode damit |
FR2861217A1 (fr) * | 2003-10-21 | 2005-04-22 | St Microelectronics Sa | Dispositif optique pour boitier semi-conducteur optique et procede de fabrication. |
US7245834B2 (en) | 2003-10-21 | 2007-07-17 | Stmicroelectronics S.A. | Optical device for optical semiconductor package and fabrication method |
EP1544924A3 (de) * | 2003-12-19 | 2010-03-31 | Philips Lumileds Lighting Company LLC | Leuchtdioden-Verpackungsanordnung |
JP2007517388A (ja) * | 2003-12-30 | 2007-06-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電モジュールおよびその製造方法 |
JP2007531320A (ja) * | 2004-03-31 | 2007-11-01 | クリー インコーポレイテッド | 発光デバイスをパッケージングする方法およびパッケージングされた発光デバイス |
US8154043B2 (en) | 2004-03-31 | 2012-04-10 | Cree, Inc. | Packaged light emitting devices |
US8426789B2 (en) | 2004-09-14 | 2013-04-23 | Omnivision Technologies, Inc. | Aspheric lens forming methods |
US7453653B2 (en) | 2004-09-14 | 2008-11-18 | Omnivision Cdm Optics, Inc. | Low height imaging system and associated methods |
US8563913B2 (en) | 2004-09-14 | 2013-10-22 | Omnivision Technologies, Inc. | Imaging systems having ray corrector, and associated methods |
WO2006114082A2 (de) * | 2005-04-26 | 2006-11-02 | Osram Opto Semiconductors Gmbh | Optisches bauteil, optoelektronisches bauelement mit dem bauteil und dessen herstellung |
TWI381935B (zh) * | 2005-04-26 | 2013-01-11 | Osram Opto Semiconductors Gmbh | 光學元件,含有該光學元件之光電組件及其製程 |
WO2006114082A3 (de) * | 2005-04-26 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Optisches bauteil, optoelektronisches bauelement mit dem bauteil und dessen herstellung |
EP1956662A3 (de) * | 2007-02-09 | 2009-12-23 | Sin Guang Li International Co., Ltd. | Gekapseltes Solarmodul mit Linse |
EP1956662A2 (de) * | 2007-02-09 | 2008-08-13 | Sin Guang Li International Co., Ltd. | Gekapseltes Solarmodul mit Linse |
US9224924B2 (en) | 2011-09-30 | 2015-12-29 | Osram Opto Semiconductors Gmbh | Optoelectronic component including an adhesive layer and method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
EP1281205B1 (de) | 2008-02-06 |
US7455461B2 (en) | 2008-11-25 |
DE50113565D1 (de) | 2008-03-20 |
US20030185526A1 (en) | 2003-10-02 |
CN1439175A (zh) | 2003-08-27 |
JP5273892B2 (ja) | 2013-08-28 |
WO2001086730A3 (de) | 2002-06-27 |
CN1328798C (zh) | 2007-07-25 |
DE10023353A1 (de) | 2001-11-29 |
JP2004512670A (ja) | 2004-04-22 |
TW525304B (en) | 2003-03-21 |
EP1281205A2 (de) | 2003-02-05 |
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