WO2001088985A2 - Uniform bitline strapping of a non-volatile memory cell - Google Patents
Uniform bitline strapping of a non-volatile memory cell Download PDFInfo
- Publication number
- WO2001088985A2 WO2001088985A2 PCT/US2001/014122 US0114122W WO0188985A2 WO 2001088985 A2 WO2001088985 A2 WO 2001088985A2 US 0114122 W US0114122 W US 0114122W WO 0188985 A2 WO0188985 A2 WO 0188985A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory cells
- array
- contacts
- layer
- bit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Definitions
- the above aspect of the present invention provides the advantage of decreasing the total cell resistance 5 and increasing the number of cells between select transistors.
- FIG. 7 illustrates a side cross-sectional view of a two-bit flash EEPROM cell constructed in accordance with an embodiment of the present invention utilizing the process of FIGS. 2-6; and 15 FIG. 8 illustrates a top cross-sectional view of the two-bit flash EEPROM cell of FIG. 7.
- bit-line oxide layer 226 is formed by thermal oxidation of semiconductor substrate 200 using ONO layer 202 as an oxidation mask.
- ONO layer 202 having been previously patterned by the etching process described above, exposes selected regions 216 of semiconductor substrate 200.
- the patterned portions of ONO layer 202 prevent the oxidation of semiconductor substrate 200 in region underlying ONO layer 202. Accordingly, bit-line oxide layers 226 are confined to selected regions 216 of semiconductor substrate 200.
- bit-line layers 226 overly buried bit- line regions 224 in semiconductor substrate 200.
- M 2, 3, . . ., etc.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01931005.1A EP1282915B1 (en) | 2000-05-16 | 2001-05-01 | Array of memory cells with straps between buried bitlines and control gates |
AU2001257485A AU2001257485A1 (en) | 2000-05-16 | 2001-05-01 | Uniform bitline strapping of a non-volatile memory cell |
BR0110812-3A BR0110812A (en) | 2000-05-16 | 2001-05-01 | Uniform bit line stripping of a nonvolatile memory cell |
JP2001584486A JP5016769B2 (en) | 2000-05-16 | 2001-05-01 | Uniform bit line strapping of non-volatile memory cells |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20462100P | 2000-05-16 | 2000-05-16 | |
US60/204,621 | 2000-05-16 | ||
US09/721,035 | 2000-11-22 | ||
US09/721,035 US6275414B1 (en) | 2000-05-16 | 2000-11-22 | Uniform bitline strapping of a non-volatile memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001088985A2 true WO2001088985A2 (en) | 2001-11-22 |
WO2001088985A3 WO2001088985A3 (en) | 2002-05-23 |
Family
ID=26899634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/014122 WO2001088985A2 (en) | 2000-05-16 | 2001-05-01 | Uniform bitline strapping of a non-volatile memory cell |
Country Status (9)
Country | Link |
---|---|
US (1) | US6275414B1 (en) |
EP (1) | EP1282915B1 (en) |
JP (1) | JP5016769B2 (en) |
KR (1) | KR100771679B1 (en) |
CN (1) | CN100447986C (en) |
AU (1) | AU2001257485A1 (en) |
BR (1) | BR0110812A (en) |
TW (1) | TW512351B (en) |
WO (1) | WO2001088985A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7075142B2 (en) | 2004-02-09 | 2006-07-11 | Samsung Electronics Co., Ltd. | Cell arrays of memory devices having extended source strapping regions |
US7176078B2 (en) | 2004-06-29 | 2007-02-13 | Samsung Electronics Co., Ltd. | Nonvolatile semiconductor memory device having strap region and fabricating method thereof |
Families Citing this family (42)
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US6538270B1 (en) * | 2000-05-16 | 2003-03-25 | Advanced Micro Devices, Inc. | Staggered bitline strapping of a non-volatile memory cell |
US6828199B2 (en) * | 2001-12-20 | 2004-12-07 | Advanced Micro Devices, Ltd. | Monos device having buried metal silicide bit line |
US6642148B1 (en) | 2002-04-19 | 2003-11-04 | Advanced Micro Devices, Inc. | RELACS shrink method applied for single print resist mask for LDD or buried bitline implants using chemically amplified DUV type photoresist |
SG125143A1 (en) * | 2002-06-21 | 2006-09-29 | Micron Technology Inc | Nrom memory cell, memory array, related devices and methods |
US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
US7095075B2 (en) * | 2003-07-01 | 2006-08-22 | Micron Technology, Inc. | Apparatus and method for split transistor memory having improved endurance |
US6979857B2 (en) | 2003-07-01 | 2005-12-27 | Micron Technology, Inc. | Apparatus and method for split gate NROM memory |
US7085170B2 (en) | 2003-08-07 | 2006-08-01 | Micron Technology, Ind. | Method for erasing an NROM cell |
US6873550B2 (en) * | 2003-08-07 | 2005-03-29 | Micron Technology, Inc. | Method for programming and erasing an NROM cell |
US6977412B2 (en) * | 2003-09-05 | 2005-12-20 | Micron Technology, Inc. | Trench corner effect bidirectional flash memory cell |
US6830963B1 (en) * | 2003-10-09 | 2004-12-14 | Micron Technology, Inc. | Fully depleted silicon-on-insulator CMOS logic |
US7184315B2 (en) * | 2003-11-04 | 2007-02-27 | Micron Technology, Inc. | NROM flash memory with self-aligned structural charge separation |
US7202523B2 (en) * | 2003-11-17 | 2007-04-10 | Micron Technology, Inc. | NROM flash memory devices on ultrathin silicon |
US7269071B2 (en) * | 2003-12-16 | 2007-09-11 | Micron Technology, Inc. | NROM memory cell, memory array, related devices and methods |
US7050330B2 (en) * | 2003-12-16 | 2006-05-23 | Micron Technology, Inc. | Multi-state NROM device |
US7241654B2 (en) | 2003-12-17 | 2007-07-10 | Micron Technology, Inc. | Vertical NROM NAND flash memory array |
US7157769B2 (en) * | 2003-12-18 | 2007-01-02 | Micron Technology, Inc. | Flash memory having a high-permittivity tunnel dielectric |
US6958272B2 (en) * | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6878991B1 (en) * | 2004-01-30 | 2005-04-12 | Micron Technology, Inc. | Vertical device 4F2 EEPROM memory |
US7221018B2 (en) * | 2004-02-10 | 2007-05-22 | Micron Technology, Inc. | NROM flash memory with a high-permittivity gate dielectric |
US6952366B2 (en) * | 2004-02-10 | 2005-10-04 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
US7072217B2 (en) * | 2004-02-24 | 2006-07-04 | Micron Technology, Inc. | Multi-state memory cell with asymmetric charge trapping |
US7075146B2 (en) * | 2004-02-24 | 2006-07-11 | Micron Technology, Inc. | 4F2 EEPROM NROM memory arrays with vertical devices |
US7102191B2 (en) * | 2004-03-24 | 2006-09-05 | Micron Technologies, Inc. | Memory device with high dielectric constant gate dielectrics and metal floating gates |
US7274068B2 (en) | 2004-05-06 | 2007-09-25 | Micron Technology, Inc. | Ballistic direct injection NROM cell on strained silicon structures |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US20060281255A1 (en) * | 2005-06-14 | 2006-12-14 | Chun-Jen Chiu | Method for forming a sealed storage non-volative multiple-bit memory cell |
US7786512B2 (en) | 2005-07-18 | 2010-08-31 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7652923B2 (en) * | 2007-02-02 | 2010-01-26 | Macronix International Co., Ltd. | Semiconductor device and memory and method of operating thereof |
US8415721B2 (en) * | 2011-05-23 | 2013-04-09 | Flashsilicon Incorporation | Field side sub-bitline nor flash array and method of fabricating the same |
KR20160001152A (en) | 2014-06-26 | 2016-01-06 | 삼성전자주식회사 | Nonvolatile memory device |
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US4698900A (en) * | 1986-03-27 | 1987-10-13 | Texas Instruments Incorporated | Method of making a non-volatile memory having dielectric filled trenches |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5319593A (en) * | 1992-12-21 | 1994-06-07 | National Semiconductor Corp. | Memory array with field oxide islands eliminated and method |
JP3584494B2 (en) * | 1994-07-25 | 2004-11-04 | ソニー株式会社 | Semiconductor nonvolatile storage device |
US5635415A (en) * | 1994-11-30 | 1997-06-03 | United Microelectronics Corporation | Method of manufacturing buried bit line flash EEPROM memory cell |
DE69619321T2 (en) * | 1995-08-11 | 2002-10-10 | Imec Inter Uni Micro Electr | Method for programming a flash EEPROM memory cell while optimizing the low power consumption and method for erasing this cell |
JP3075211B2 (en) * | 1996-07-30 | 2000-08-14 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
JP3225916B2 (en) | 1998-03-16 | 2001-11-05 | 日本電気株式会社 | Nonvolatile semiconductor memory device and method of manufacturing the same |
US6215148B1 (en) * | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
US6107133A (en) * | 1998-05-28 | 2000-08-22 | International Business Machines Corporation | Method for making a five square vertical DRAM cell |
-
2000
- 2000-11-22 US US09/721,035 patent/US6275414B1/en not_active Expired - Fee Related
-
2001
- 2001-05-01 AU AU2001257485A patent/AU2001257485A1/en not_active Abandoned
- 2001-05-01 BR BR0110812-3A patent/BR0110812A/en not_active IP Right Cessation
- 2001-05-01 CN CNB018096115A patent/CN100447986C/en not_active Expired - Fee Related
- 2001-05-01 WO PCT/US2001/014122 patent/WO2001088985A2/en active Application Filing
- 2001-05-01 JP JP2001584486A patent/JP5016769B2/en not_active Expired - Fee Related
- 2001-05-01 EP EP01931005.1A patent/EP1282915B1/en not_active Expired - Lifetime
- 2001-05-01 KR KR1020027015487A patent/KR100771679B1/en not_active IP Right Cessation
- 2001-05-14 TW TW090111429A patent/TW512351B/en not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
None |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7075142B2 (en) | 2004-02-09 | 2006-07-11 | Samsung Electronics Co., Ltd. | Cell arrays of memory devices having extended source strapping regions |
US7176078B2 (en) | 2004-06-29 | 2007-02-13 | Samsung Electronics Co., Ltd. | Nonvolatile semiconductor memory device having strap region and fabricating method thereof |
Also Published As
Publication number | Publication date |
---|---|
US6275414B1 (en) | 2001-08-14 |
EP1282915B1 (en) | 2014-11-05 |
JP2003533884A (en) | 2003-11-11 |
CN100447986C (en) | 2008-12-31 |
JP5016769B2 (en) | 2012-09-05 |
WO2001088985A3 (en) | 2002-05-23 |
CN1429406A (en) | 2003-07-09 |
EP1282915A2 (en) | 2003-02-12 |
TW512351B (en) | 2002-12-01 |
KR100771679B1 (en) | 2007-11-01 |
BR0110812A (en) | 2003-02-11 |
AU2001257485A1 (en) | 2001-11-26 |
KR20020097284A (en) | 2002-12-31 |
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