WO2001093303A3 - High throughput multipass printing with lithographic quality - Google Patents

High throughput multipass printing with lithographic quality Download PDF

Info

Publication number
WO2001093303A3
WO2001093303A3 PCT/US2001/013166 US0113166W WO0193303A3 WO 2001093303 A3 WO2001093303 A3 WO 2001093303A3 US 0113166 W US0113166 W US 0113166W WO 0193303 A3 WO0193303 A3 WO 0193303A3
Authority
WO
WIPO (PCT)
Prior art keywords
writing
input address
address size
passes
grids
Prior art date
Application number
PCT/US2001/013166
Other languages
French (fr)
Other versions
WO2001093303A2 (en
Inventor
Jan M Chabala
Sriram Krishnaswami
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to AU2001255614A priority Critical patent/AU2001255614A1/en
Publication of WO2001093303A2 publication Critical patent/WO2001093303A2/en
Publication of WO2001093303A3 publication Critical patent/WO2001093303A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method for a raster scan particle or light beam lithography system for writing in multiple passes to form an effective writing grid that is larger than the input address size. The composite of all passes forms a staggered checkerboard pattern of overlapping pixels. The desired pattern is sampled using a sampling matrix having an array of cells, e.g., 8x8, of a predetermined input address size. Each pass produces a writing grid defined by the distance between beam placements in a single pass. The composite of all passes forms the effective writing grid. Thus, for example, a total of eight passes may be used to form eight offset writing grids. The resulting writing grids may be eight times the input address size, and effective writing grids may be twice the input address size. Consequently, throughput is increased. Moreover, the spot size produced by the particle or light beam may be at least approximately eight times the input address size to ensure good lithographic quality. Different sampling matrices may be used depending on whether there is a horizontal or vertical feature in the pattern being sampled of if the feature is at a particular angle.
PCT/US2001/013166 2000-06-01 2001-04-23 High throughput multipass printing with lithographic quality WO2001093303A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001255614A AU2001255614A1 (en) 2000-06-01 2001-04-23 High throughput multipass printing with lithographic quality

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58566300A 2000-06-01 2000-06-01
US09/585,663 2000-06-01

Publications (2)

Publication Number Publication Date
WO2001093303A2 WO2001093303A2 (en) 2001-12-06
WO2001093303A3 true WO2001093303A3 (en) 2003-10-30

Family

ID=24342410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/013166 WO2001093303A2 (en) 2000-06-01 2001-04-23 High throughput multipass printing with lithographic quality

Country Status (2)

Country Link
AU (1) AU2001255614A1 (en)
WO (1) WO2001093303A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9291902B2 (en) 2010-03-05 2016-03-22 Mycronic AB Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6645677B1 (en) 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
CN1582407A (en) 2001-09-12 2005-02-16 麦克罗尼克激光系统公司 Improved method and apparatus using an slm
US7302111B2 (en) 2001-09-12 2007-11-27 Micronic Laser Systems A.B. Graphics engine for high precision lithography
US7106490B2 (en) 2001-12-14 2006-09-12 Micronic Laser Systems Ab Methods and systems for improved boundary contrast
SE0104238D0 (en) 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
US7186486B2 (en) * 2003-08-04 2007-03-06 Micronic Laser Systems Ab Method to pattern a substrate
JP2007522671A (en) 2004-02-25 2007-08-09 マイクロニック レーザー システムズ アクチボラゲット Method for exposing a pattern and emulating a mask in optical maskless lithography
US8077377B2 (en) 2008-04-24 2011-12-13 Micronic Mydata AB Spatial light modulator with structured mirror surfaces
JP5709465B2 (en) * 2010-10-29 2015-04-30 キヤノン株式会社 Drawing apparatus and article manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103101A (en) * 1991-03-04 1992-04-07 Etec Systems, Inc. Multiphase printing for E-beam lithography
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
US5621216A (en) * 1996-04-26 1997-04-15 International Business Machines Corporation Hardware/software implementation for multipass E-beam mask writing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103101A (en) * 1991-03-04 1992-04-07 Etec Systems, Inc. Multiphase printing for E-beam lithography
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
US5621216A (en) * 1996-04-26 1997-04-15 International Business Machines Corporation Hardware/software implementation for multipass E-beam mask writing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9291902B2 (en) 2010-03-05 2016-03-22 Mycronic AB Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image

Also Published As

Publication number Publication date
AU2001255614A1 (en) 2001-12-11
WO2001093303A2 (en) 2001-12-06

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