WO2002002842A3 - Low temperature cvd bst deposition - Google Patents

Low temperature cvd bst deposition Download PDF

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Publication number
WO2002002842A3
WO2002002842A3 PCT/US2001/020223 US0120223W WO0202842A3 WO 2002002842 A3 WO2002002842 A3 WO 2002002842A3 US 0120223 W US0120223 W US 0120223W WO 0202842 A3 WO0202842 A3 WO 0202842A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
bst
oxide layer
deposition
strontium
Prior art date
Application number
PCT/US2001/020223
Other languages
French (fr)
Other versions
WO2002002842A2 (en
Inventor
Xioliang Jin
Lee Luo
Jun Zhao
Charles Dornfest
Xian Zhi Tao
Shreyas Kher
Annabel Nickles
Sandeep Nijhavian
Yaxin Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2002002842A2 publication Critical patent/WO2002002842A2/en
Publication of WO2002002842A3 publication Critical patent/WO2002002842A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide

Abstract

A process and apparatus is provided for the vaporization of liquid precursors and deposition of a layer at a temperature of less than or equal to about 480 °C on a suitable substrate. Particularly contemplated is a process for CVD deposition of a metal-oxide layer, such as a barium, strontium, titanium oxide (BST) layer, on a silicon substrate to make integrated circuit capacitors useful in high capacity dynamic memory modules. The process allows for depositing smooth, conformal BST layers having high dielectric constants and consistent layer compositions. In one aspect of the invention, a method is provided to deposit BST layers by introducing a precursor reactant gas comprising barium, strontium, and titanium, to a processing chamber, introducing an oxidizing gas to the processing chamber, and reacting the precursor reactant gas in the presence of the oxidizing gas at a substrate temperature of less than or equal to about 480 °C to deposit the oxide layer. The oxide layer may be further annealed to recrystallize the layer to improve dielectric properties and reduce leakage current.
PCT/US2001/020223 2000-06-29 2001-06-25 Low temperature cvd bst deposition WO2002002842A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60901400A 2000-06-29 2000-06-29
US09/609,014 2000-06-29

Publications (2)

Publication Number Publication Date
WO2002002842A2 WO2002002842A2 (en) 2002-01-10
WO2002002842A3 true WO2002002842A3 (en) 2002-05-23

Family

ID=24439003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020223 WO2002002842A2 (en) 2000-06-29 2001-06-25 Low temperature cvd bst deposition

Country Status (1)

Country Link
WO (1) WO2002002842A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112151357B (en) * 2020-09-24 2023-03-21 欧阳俊 Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709355A1 (en) * 1994-09-30 1996-05-01 Texas Instruments Incorporated Barium and/or strontium titanate dielectric thin film comprising erbium, and formation process
US5618761A (en) * 1994-09-16 1997-04-08 Kabushiki Kaisha Toshiba Method of manufacturing a perovskite thin film dielectric
US5783253A (en) * 1996-09-07 1998-07-21 Lg Semicon Co., Ltd. Method for forming a dielectric film and method for fabricating a capacitor using the same
US5834060A (en) * 1996-02-13 1998-11-10 Mitsubishi Denki Kabushiki Kaisha High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film
JPH11297681A (en) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp Cvd apparatus for forming high permittivity thin film and method of forming high permittivity thin film
US6066209A (en) * 1997-09-11 2000-05-23 Applied Materials, Inc. Cold trap

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5618761A (en) * 1994-09-16 1997-04-08 Kabushiki Kaisha Toshiba Method of manufacturing a perovskite thin film dielectric
EP0709355A1 (en) * 1994-09-30 1996-05-01 Texas Instruments Incorporated Barium and/or strontium titanate dielectric thin film comprising erbium, and formation process
US5834060A (en) * 1996-02-13 1998-11-10 Mitsubishi Denki Kabushiki Kaisha High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film
US5783253A (en) * 1996-09-07 1998-07-21 Lg Semicon Co., Ltd. Method for forming a dielectric film and method for fabricating a capacitor using the same
US6066209A (en) * 1997-09-11 2000-05-23 Applied Materials, Inc. Cold trap
US6077562A (en) * 1997-09-11 2000-06-20 Applied Materials, Inc. Method for depositing barium strontium titanate
JPH11297681A (en) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp Cvd apparatus for forming high permittivity thin film and method of forming high permittivity thin film
US6179920B1 (en) * 1998-04-07 2001-01-30 Mitsubishi Denki Kabushiki Kaisha CVD apparatus for forming thin film having high dielectric constant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01 31 January 2000 (2000-01-31) *

Also Published As

Publication number Publication date
WO2002002842A2 (en) 2002-01-10

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