WO2002005268A3 - All metal giant magnetoresistive memory - Google Patents

All metal giant magnetoresistive memory Download PDF

Info

Publication number
WO2002005268A3
WO2002005268A3 PCT/US2001/020659 US0120659W WO0205268A3 WO 2002005268 A3 WO2002005268 A3 WO 2002005268A3 US 0120659 W US0120659 W US 0120659W WO 0205268 A3 WO0205268 A3 WO 0205268A3
Authority
WO
WIPO (PCT)
Prior art keywords
giant magnetoresistive
magnetoresistive memory
memory cells
metal
metal giant
Prior art date
Application number
PCT/US2001/020659
Other languages
French (fr)
Other versions
WO2002005268A2 (en
Inventor
Richard Spitzer
E James Torok
Original Assignee
Integrated Magnetoelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Magnetoelectronics filed Critical Integrated Magnetoelectronics
Priority to AU2001275851A priority Critical patent/AU2001275851A1/en
Priority to JP2002508788A priority patent/JP2004507885A/en
Priority to EP01953397A priority patent/EP1305795A4/en
Publication of WO2002005268A2 publication Critical patent/WO2002005268A2/en
Publication of WO2002005268A3 publication Critical patent/WO2002005268A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits

Abstract

A memory device (100) is described which includes memory cells (102), access lines, and support electronics (104, 106, 108, 110) for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.
PCT/US2001/020659 2000-07-11 2001-06-27 All metal giant magnetoresistive memory WO2002005268A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2001275851A AU2001275851A1 (en) 2000-07-11 2001-06-27 All metal giant magnetoresistive memory
JP2002508788A JP2004507885A (en) 2000-07-11 2001-06-27 All-metal giant magnetoresistive memory
EP01953397A EP1305795A4 (en) 2000-07-11 2001-06-27 All metal giant magnetoresistive memory

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US21733800P 2000-07-11 2000-07-11
US21778100P 2000-07-11 2000-07-11
US60/217,338 2000-07-11
US60/217,781 2000-07-11
US09/883,660 US6483740B2 (en) 2000-07-11 2001-06-18 All metal giant magnetoresistive memory
US09/883,660 2001-06-18

Publications (2)

Publication Number Publication Date
WO2002005268A2 WO2002005268A2 (en) 2002-01-17
WO2002005268A3 true WO2002005268A3 (en) 2002-06-06

Family

ID=27396408

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020659 WO2002005268A2 (en) 2000-07-11 2001-06-27 All metal giant magnetoresistive memory

Country Status (5)

Country Link
US (1) US6483740B2 (en)
EP (1) EP1305795A4 (en)
JP (1) JP2004507885A (en)
AU (1) AU2001275851A1 (en)
WO (1) WO2002005268A2 (en)

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US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US6594175B2 (en) * 2000-07-11 2003-07-15 Integrated Magnetoelectronics Corp High density giant magnetoresistive memory cell
US6912696B2 (en) * 2000-12-05 2005-06-28 Oki Electric Industry Co., Ltd. Smart card and circuitry layout thereof for reducing cross-talk
US7036068B2 (en) * 2001-07-25 2006-04-25 Hewlett-Packard Development Company, L.P. Error correction coding and decoding in a solid-state storage device
US6981196B2 (en) * 2001-07-25 2005-12-27 Hewlett-Packard Development Company, L.P. Data storage method for use in a magnetoresistive solid-state storage device
US20030023922A1 (en) * 2001-07-25 2003-01-30 Davis James A. Fault tolerant magnetoresistive solid-state storage device
JP2003151262A (en) * 2001-11-15 2003-05-23 Toshiba Corp Magnetic random access memory
JP2003242771A (en) * 2002-02-15 2003-08-29 Toshiba Corp Semiconductor memory device
US20030161180A1 (en) * 2002-02-22 2003-08-28 Bloomquist Darrel R. Shared bit lines in stacked MRAM arrays
US20030172339A1 (en) * 2002-03-08 2003-09-11 Davis James Andrew Method for error correction decoding in a magnetoresistive solid-state storage device
US6973604B2 (en) * 2002-03-08 2005-12-06 Hewlett-Packard Development Company, L.P. Allocation of sparing resources in a magnetoresistive solid-state storage device
US6859063B2 (en) 2002-04-11 2005-02-22 Integrated Magnetoelectronics Corporation Transpinnor-based transmission line transceivers and applications
AU2003225048A1 (en) * 2002-04-19 2003-11-03 Integrated Magnetoelectronics Corporation Interfaces between semiconductor circuitry and transpinnor-based circuitry
US6780653B2 (en) 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6992919B2 (en) * 2002-12-20 2006-01-31 Integrated Magnetoelectronics Corporation All-metal three-dimensional circuits and memories
US7005852B2 (en) 2003-04-04 2006-02-28 Integrated Magnetoelectronics Corporation Displays with all-metal electronics
US20050083743A1 (en) * 2003-09-09 2005-04-21 Integrated Magnetoelectronics Corporation A California Corporation Nonvolatile sequential machines
US20050269612A1 (en) * 2004-05-11 2005-12-08 Integrated Magnetoelectronics Solid-state component based on current-induced magnetization reversal
WO2006078720A2 (en) * 2005-01-19 2006-07-27 Integrated Magnetoelectronics Corporation Radiation detector
WO2008039743A2 (en) * 2006-09-25 2008-04-03 Massachusetts Institute Of Technology Wheatstone-bridge magnetoresistive device
US7727055B2 (en) * 2006-11-22 2010-06-01 Applied Materials, Inc. Flexible membrane for carrier head
US7388776B1 (en) * 2006-12-22 2008-06-17 Hitachi Global Storage Technologies Netherlands, B.V. Three-dimensional magnetic memory
US7719882B2 (en) * 2007-02-06 2010-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced MRAM design
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US7751231B2 (en) * 2008-05-05 2010-07-06 Qimonda Ag Method and integrated circuit for determining the state of a resistivity changing memory cell
US8619467B2 (en) * 2010-02-22 2013-12-31 Integrated Magnetoelectronics High GMR structure with low drive fields
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures
WO2019112576A1 (en) * 2017-12-06 2019-06-13 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures
JP2019164873A (en) 2018-03-20 2019-09-26 東芝メモリ株式会社 Semiconductor storage device and control method therefor

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US4829476A (en) * 1987-07-28 1989-05-09 Honeywell Inc. Differential magnetoresistive memory sensing
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5661449A (en) * 1994-08-29 1997-08-26 Tdk Corporation Magnetic multilayer film, method for making, and magnetoresistance device
US5903708A (en) * 1994-05-30 1999-05-11 Sony Corporation Magneto-resistance effect device with improved thermal resistance

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US5903708A (en) * 1994-05-30 1999-05-11 Sony Corporation Magneto-resistance effect device with improved thermal resistance
US5661449A (en) * 1994-08-29 1997-08-26 Tdk Corporation Magnetic multilayer film, method for making, and magnetoresistance device
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation

Non-Patent Citations (1)

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Title
See also references of EP1305795A4 *

Also Published As

Publication number Publication date
WO2002005268A2 (en) 2002-01-17
AU2001275851A1 (en) 2002-01-21
US20020024842A1 (en) 2002-02-28
US6483740B2 (en) 2002-11-19
EP1305795A4 (en) 2005-12-21
EP1305795A2 (en) 2003-05-02
JP2004507885A (en) 2004-03-11

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