WO2002005318A3 - High density giant magnetoresistive memory cell - Google Patents

High density giant magnetoresistive memory cell Download PDF

Info

Publication number
WO2002005318A3
WO2002005318A3 PCT/US2001/041177 US0141177W WO0205318A3 WO 2002005318 A3 WO2002005318 A3 WO 2002005318A3 US 0141177 W US0141177 W US 0141177W WO 0205318 A3 WO0205318 A3 WO 0205318A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory cell
magnetic layers
giant magnetoresistive
high density
magnetoresistive memory
Prior art date
Application number
PCT/US2001/041177
Other languages
French (fr)
Other versions
WO2002005318A2 (en
Inventor
E James Torok
Richard Spitzer
Original Assignee
Integrated Magnetoelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Magnetoelectronics filed Critical Integrated Magnetoelectronics
Priority to AU2001276046A priority Critical patent/AU2001276046A1/en
Priority to JP2002508831A priority patent/JP2004508698A/en
Priority to EP01953615A priority patent/EP1386322A2/en
Publication of WO2002005318A2 publication Critical patent/WO2002005318A2/en
Publication of WO2002005318A3 publication Critical patent/WO2002005318A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

Abstract

A multi-layered memory cell (902) is described having a plurality of magnetic layers (904, 905), each of the magnetic layers being for magneticallystoring one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers (904, 905) and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines (908) and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer (top or bottom). The magnetic layers (904, 905), the access lines (908), and the at least one keeper layer form a substantially closed flux structure.
PCT/US2001/041177 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell WO2002005318A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2001276046A AU2001276046A1 (en) 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell
JP2002508831A JP2004508698A (en) 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell
EP01953615A EP1386322A2 (en) 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21733900P 2000-07-11 2000-07-11
US60/217,339 2000-07-11
US09/883,672 US6594175B2 (en) 2000-07-11 2001-06-18 High density giant magnetoresistive memory cell
US09/883,672 2001-06-18

Publications (2)

Publication Number Publication Date
WO2002005318A2 WO2002005318A2 (en) 2002-01-17
WO2002005318A3 true WO2002005318A3 (en) 2003-09-04

Family

ID=26911850

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/041177 WO2002005318A2 (en) 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell

Country Status (5)

Country Link
US (1) US6594175B2 (en)
EP (1) EP1386322A2 (en)
JP (1) JP2004508698A (en)
AU (1) AU2001276046A1 (en)
WO (1) WO2002005318A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
KR100462791B1 (en) * 2001-11-30 2004-12-20 한국과학기술연구원 A wordline with a magnetic field keeper for magnetic memory devices and sensors and method of manufacture therefor
US6885576B2 (en) * 2002-08-13 2005-04-26 Micron Technology, Inc. Closed flux magnetic memory
US6925000B2 (en) 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
CN1305525C (en) * 2004-03-27 2007-03-21 中国人民解放军第三军医大学 0157 bacterium gene engineering multivalence subunit vaccine of human and sensitive animals and its preparing method
US20050269612A1 (en) * 2004-05-11 2005-12-08 Integrated Magnetoelectronics Solid-state component based on current-induced magnetization reversal
US7061037B2 (en) * 2004-07-06 2006-06-13 Maglabs, Inc. Magnetic random access memory with multiple memory layers and improved memory cell selectivity
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
EP2539896B1 (en) * 2010-02-22 2016-10-19 Integrated Magnetoelectronics Corporation A high gmr structure with low drive fields
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
JP6258452B1 (en) * 2016-12-02 2018-01-10 株式会社東芝 Magnetic memory
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972786A (en) 1974-06-28 1976-08-03 Ampex Corporation Mechanically enhanced magnetic memory
US4751677A (en) 1986-09-16 1988-06-14 Honeywell Inc. Differential arrangement magnetic memory cell
US5173873A (en) 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5422621A (en) 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
FR2712420B1 (en) 1993-11-08 1995-12-15 Commissariat Energie Atomique Magnetic read head with multilayer magnetoresistive element and concentrator and method of making the same.
US5650889A (en) 1994-02-07 1997-07-22 Hitachi, Ltd. Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium
US5654566A (en) 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5652445A (en) 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5585986A (en) 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5852574A (en) 1997-12-24 1998-12-22 Motorola, Inc. High density magnetoresistive random access memory device and operating method thereof
JPH11306750A (en) 1998-04-20 1999-11-05 Univ Kyoto Magnetic-type semiconductor integrated storage
US5969978A (en) 1998-09-30 1999-10-19 The United States Of America As Represented By The Secretary Of The Navy Read/write memory architecture employing closed ring elements
US6134138A (en) 1999-07-30 2000-10-17 Honeywell Inc. Method and apparatus for reading a magnetoresistive memory
US6483740B2 (en) * 2000-07-11 2002-11-19 Integrated Magnetoelectronics Corporation All metal giant magnetoresistive memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation

Also Published As

Publication number Publication date
EP1386322A2 (en) 2004-02-04
US20020009840A1 (en) 2002-01-24
AU2001276046A1 (en) 2002-01-21
JP2004508698A (en) 2004-03-18
US6594175B2 (en) 2003-07-15
WO2002005318A2 (en) 2002-01-17

Similar Documents

Publication Publication Date Title
WO2002005318A3 (en) High density giant magnetoresistive memory cell
CN101197345B (en) Mram cell structure and magnetoresistance random access memory structure
US6812537B2 (en) Magnetic memory and method of operation thereof
US6868002B2 (en) Magnetic memory with reduced write current
EP1248273B1 (en) Cladded read conductor for a tunnel junction memory cell
US6366494B2 (en) Magnetoresistive memory having elevated interference immunity
WO2002005268A3 (en) All metal giant magnetoresistive memory
EP1248265A3 (en) Magnetic memory cell
WO2002023540A3 (en) New mr structures for high areal density reader by using side shields
WO2004064073A3 (en) Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
ATE371958T1 (en) LOCKING BLOCK FOR MRAM ELECTRODES
CA2211699A1 (en) Nonvolatile magnetoresistive memory with fully closed-flux operation
US20060138509A1 (en) Magnetic random access memory with lower switching field through indirect exchange coupling
US6404672B2 (en) Magnetic element and magnetic memory device
KR20060045767A (en) Magnetic memory and recording method thereof
WO2000019440A3 (en) Magnetoresistive memory with low current density
WO2004053880A3 (en) Mram memories utilizing magnetic write lines
US7852664B2 (en) Magnetic memory cell structure with thermal assistant and magnetic dynamic random access memory
JP2006148053A (en) Magnetoresistive random access memory for making inverted magnetic field lowered
JP2004274016A (en) Magnetic storage semiconductor device
US7480171B2 (en) MRAM based on vertical current writing and its control method
JP2003510755A (en) Multivalent magnetoresistive read / write memory, and method of reading from and writing to this memory
KR20040014916A (en) Semiconductor integrated circuit device
EP3353789B1 (en) Spinram
EP1460442A2 (en) A magnetic sensor

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWE Wipo information: entry into national phase

Ref document number: 2001953615

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2001953615

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2001953615

Country of ref document: EP