WO2002009158A3 - Semiconductor structure including a magnetic tunnel junction - Google Patents
Semiconductor structure including a magnetic tunnel junction Download PDFInfo
- Publication number
- WO2002009158A3 WO2002009158A3 PCT/US2001/022659 US0122659W WO0209158A3 WO 2002009158 A3 WO2002009158 A3 WO 2002009158A3 US 0122659 W US0122659 W US 0122659W WO 0209158 A3 WO0209158 A3 WO 0209158A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- silicon
- accommodating buffer
- buffer layer
- ferromagnetic
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 abstract 3
- 230000005294 ferromagnetic effect Effects 0.000 abstract 2
- 239000003302 ferromagnetic material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001276980A AU2001276980A1 (en) | 2000-07-24 | 2001-07-18 | Semiconductor structure including a magnetic tunnel junction |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62452600A | 2000-07-24 | 2000-07-24 | |
US09/624,526 | 2000-07-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002009158A2 WO2002009158A2 (en) | 2002-01-31 |
WO2002009158A3 true WO2002009158A3 (en) | 2002-07-18 |
Family
ID=24502329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/022659 WO2002009158A2 (en) | 2000-07-24 | 2001-07-18 | Semiconductor structure including a magnetic tunnel junction |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001276980A1 (en) |
TW (1) | TW503460B (en) |
WO (1) | WO2002009158A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8927403B2 (en) | 2005-03-15 | 2015-01-06 | Asm International N.V. | Selective deposition of noble metal thin films |
US9129897B2 (en) | 2008-12-19 | 2015-09-08 | Asm International N.V. | Metal silicide, metal germanide, methods for making the same |
US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
US9587307B2 (en) | 2005-03-15 | 2017-03-07 | Asm International N.V. | Enhanced deposition of noble metals |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7494927B2 (en) | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
KR100869326B1 (en) * | 2000-11-30 | 2008-11-18 | 에이에스엠 인터내셔널 엔.브이. | thin films for magnetic devices |
US6759081B2 (en) | 2001-05-11 | 2004-07-06 | Asm International, N.V. | Method of depositing thin films for magnetic heads |
US7037574B2 (en) | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
CN111816760B (en) * | 2019-04-11 | 2023-07-14 | 上海磁宇信息科技有限公司 | Magnetic memory cell of magnetic random access memory and forming method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
WO2001033585A1 (en) * | 1999-11-05 | 2001-05-10 | Oxxel Oxide Electronics Technology, Inc. | Synthesis and magnetoresistance test system using double-perovskite samples for preparation of a magnetoresistance device |
-
2001
- 2001-07-18 WO PCT/US2001/022659 patent/WO2002009158A2/en active Application Filing
- 2001-07-18 AU AU2001276980A patent/AU2001276980A1/en not_active Abandoned
- 2001-07-23 TW TW090117916A patent/TW503460B/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
WO2001033585A1 (en) * | 1999-11-05 | 2001-05-10 | Oxxel Oxide Electronics Technology, Inc. | Synthesis and magnetoresistance test system using double-perovskite samples for preparation of a magnetoresistance device |
Non-Patent Citations (3)
Title |
---|
MARTINEZ BOUBETA C ET AL: "Epitaxial metallic nanostructures on GaAs", SURFACE SCIENCE, vol. 482-485, June 2001 (2001-06-01), Elsevier, Netherlands, pages 910 - 915, XP002191521, ISSN: 0039-6028 * |
OBATA T ET AL: "Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers", APPLIED PHYSICS LETTERS, vol. 74, no. 2, 11 January 1999 (1999-01-11), pages 290 - 292, XP000804874, ISSN: 0003-6951 * |
PUST L ET AL: "Temperature dependence of the magnetization reversal in Co(fcc)-BN-Co(poly hcp) structures", JOURNAL OF APPLIED PHYSICS, vol. 85, no. 8, 15 April 1999 (1999-04-15), pages 5765 - 5767, XP000902206, ISSN: 0021-8979 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8927403B2 (en) | 2005-03-15 | 2015-01-06 | Asm International N.V. | Selective deposition of noble metal thin films |
US9469899B2 (en) | 2005-03-15 | 2016-10-18 | Asm International N.V. | Selective deposition of noble metal thin films |
US9587307B2 (en) | 2005-03-15 | 2017-03-07 | Asm International N.V. | Enhanced deposition of noble metals |
US9129897B2 (en) | 2008-12-19 | 2015-09-08 | Asm International N.V. | Metal silicide, metal germanide, methods for making the same |
US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
Also Published As
Publication number | Publication date |
---|---|
AU2001276980A1 (en) | 2002-02-05 |
TW503460B (en) | 2002-09-21 |
WO2002009158A2 (en) | 2002-01-31 |
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