WO2002009159A3 - Thin-film metallic oxide structure and process for fabricating same - Google Patents

Thin-film metallic oxide structure and process for fabricating same Download PDF

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Publication number
WO2002009159A3
WO2002009159A3 PCT/US2001/022679 US0122679W WO0209159A3 WO 2002009159 A3 WO2002009159 A3 WO 2002009159A3 US 0122679 W US0122679 W US 0122679W WO 0209159 A3 WO0209159 A3 WO 0209159A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin
metallic oxide
oxide structure
fabricating same
film metallic
Prior art date
Application number
PCT/US2001/022679
Other versions
WO2002009159A2 (en
Inventor
Kurt Eisenbeiser
Jeffrey M Finder
Jamal Ramdani
Ravindranath Droopad
William Jay Ooms
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to JP2002514770A priority Critical patent/JP2004505444A/en
Priority to AU2001276989A priority patent/AU2001276989A1/en
Publication of WO2002009159A2 publication Critical patent/WO2002009159A2/en
Publication of WO2002009159A3 publication Critical patent/WO2002009159A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
PCT/US2001/022679 2000-07-24 2001-07-19 Thin-film metallic oxide structure and process for fabricating same WO2002009159A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002514770A JP2004505444A (en) 2000-07-24 2001-07-19 Thin film metal oxide structure and method of manufacturing the same
AU2001276989A AU2001276989A1 (en) 2000-07-24 2001-07-19 Thin-film metallic oxide structure and process for fabricating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62487700A 2000-07-24 2000-07-24
US09/624,877 2000-07-24

Publications (2)

Publication Number Publication Date
WO2002009159A2 WO2002009159A2 (en) 2002-01-31
WO2002009159A3 true WO2002009159A3 (en) 2002-04-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022679 WO2002009159A2 (en) 2000-07-24 2001-07-19 Thin-film metallic oxide structure and process for fabricating same

Country Status (4)

Country Link
JP (1) JP2004505444A (en)
CN (1) CN1449458A (en)
AU (1) AU2001276989A1 (en)
WO (1) WO2002009159A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7072093B2 (en) 2003-04-30 2006-07-04 Hewlett-Packard Development Company, L.P. Optical interference pixel display with charge control
DE102004058958B4 (en) * 2004-12-08 2006-10-26 Forschungszentrum Jülich GmbH Semiconductor device made of a high band gap material and dielectric constant
JP4678410B2 (en) * 2008-02-12 2011-04-27 セイコーエプソン株式会社 Head manufacturing method and printer manufacturing method
CN101789260B (en) * 2010-01-19 2013-03-20 湘潭大学 Epitaxial strain ferroelectric film for ferroelectric memory and method for regulating and controlling strain thereof
CN101913860B (en) * 2010-08-19 2012-11-21 西北工业大学 Bismuth titanate based piezoelectric ceramic with high curie temperature and preparation method thereof
JP5716407B2 (en) * 2011-01-17 2015-05-13 株式会社リコー Field effect transistor, display element, image display device, and system
CN106277041B (en) * 2016-11-14 2018-01-12 东北大学 A kind of preparation method of lanthanum gallate solid solution barium titanate amorphous
US10697090B2 (en) * 2017-06-23 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Thin-film structural body and method for fabricating thereof
CN112537799B (en) * 2019-09-20 2021-09-28 中国科学院物理研究所 Method for regulating oxygen vacancy sequence phase of perovskite phase cobalt oxide material
CN111926295B (en) * 2020-09-01 2022-08-09 深圳大学 Huge tetragonal phase PbTiO 3 Method for producing thin film
CN115418718A (en) * 2022-09-07 2022-12-02 武汉大学 Product based on two-dimensional spinel type ferrite film and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450575A (en) * 1987-08-21 1989-02-27 Nec Corp Substrate for electronic device
WO1994003908A1 (en) * 1992-03-05 1994-02-17 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5650646A (en) * 1992-05-01 1997-07-22 Texas Instruments Incorporated Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
US5656382A (en) * 1993-11-04 1997-08-12 Fuji Xerox Co., Ltd. Oriented conductive film and process for preparing the same
WO1998005807A1 (en) * 1996-08-05 1998-02-12 Lockheed Martin Energy Research Corporation CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450575A (en) * 1987-08-21 1989-02-27 Nec Corp Substrate for electronic device
WO1994003908A1 (en) * 1992-03-05 1994-02-17 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5650646A (en) * 1992-05-01 1997-07-22 Texas Instruments Incorporated Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
US5656382A (en) * 1993-11-04 1997-08-12 Fuji Xerox Co., Ltd. Oriented conductive film and process for preparing the same
WO1998005807A1 (en) * 1996-08-05 1998-02-12 Lockheed Martin Energy Research Corporation CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IMADA S ET AL: "Epitaxial growth of ferroelectric YMnO3 thin films on Si(111) substrates by molecular beam epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS), vol. 37, no. 12A, December 1998 (1998-12-01), pages 6497 - 6501, XP000927318, ISSN: 0021-4922 *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 251 (E - 771) 12 June 1989 (1989-06-12) *
ZHANG W ET AL: "Enhanced magnetoresistance in La-Ca-Mn-O films on Si substrates using YBaCuO/CeO2 heterostructures", PHYSICA C, vol. 282-287, no. 2003, 1 August 1997 (1997-08-01), pages 1231 - 1232, XP004120380, ISSN: 0921-4534 *

Also Published As

Publication number Publication date
JP2004505444A (en) 2004-02-19
AU2001276989A1 (en) 2002-02-05
WO2002009159A2 (en) 2002-01-31
CN1449458A (en) 2003-10-15

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