WO2002009203A3 - Microelectronic piezoelectric structure - Google Patents
Microelectronic piezoelectric structure Download PDFInfo
- Publication number
- WO2002009203A3 WO2002009203A3 PCT/US2001/022676 US0122676W WO0209203A3 WO 2002009203 A3 WO2002009203 A3 WO 2002009203A3 US 0122676 W US0122676 W US 0122676W WO 0209203 A3 WO0209203 A3 WO 0209203A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- monocrystalline
- microelectronic
- strontium titanate
- piezoelectric structure
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/10516—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead based oxides
- H10N30/8554—Lead zirconium titanate based
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037001102A KR100827216B1 (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
EP01954763A EP1307930A2 (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
AU2001276987A AU2001276987A1 (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
JP2002514808A JP2004517462A (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/624,527 | 2000-07-24 | ||
US09/624,527 US6432546B1 (en) | 2000-07-24 | 2000-07-24 | Microelectronic piezoelectric structure and method of forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002009203A2 WO2002009203A2 (en) | 2002-01-31 |
WO2002009203A3 true WO2002009203A3 (en) | 2002-05-23 |
Family
ID=24502333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/022676 WO2002009203A2 (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
Country Status (8)
Country | Link |
---|---|
US (2) | US6432546B1 (en) |
EP (1) | EP1307930A2 (en) |
JP (1) | JP2004517462A (en) |
KR (1) | KR100827216B1 (en) |
CN (1) | CN1511350A (en) |
AU (1) | AU2001276987A1 (en) |
TW (1) | TW508849B (en) |
WO (1) | WO2002009203A2 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6693033B2 (en) * | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6482538B2 (en) * | 2000-07-24 | 2002-11-19 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US6916717B2 (en) * | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
JP4120589B2 (en) * | 2004-01-13 | 2008-07-16 | セイコーエプソン株式会社 | Magnetoresistive element and magnetic memory device |
US20060288928A1 (en) * | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
US7364989B2 (en) * | 2005-07-01 | 2008-04-29 | Sharp Laboratories Of America, Inc. | Strain control of epitaxial oxide films using virtual substrates |
US7696549B2 (en) * | 2005-08-04 | 2010-04-13 | University Of Maryland | Bismuth ferrite films and devices grown on silicon |
US20070029592A1 (en) * | 2005-08-04 | 2007-02-08 | Ramamoorthy Ramesh | Oriented bismuth ferrite films grown on silicon and devices formed thereby |
US7541105B2 (en) | 2006-09-25 | 2009-06-02 | Seagate Technology Llc | Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers |
US20090015142A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display devices |
US8179034B2 (en) * | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
US20100110551A1 (en) * | 2008-10-31 | 2010-05-06 | 3M Innovative Properties Company | Light extraction film with high index backfill layer and passivation layer |
US7957621B2 (en) * | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248564A (en) * | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
Family Cites Families (17)
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JPS6450575A (en) * | 1987-08-21 | 1989-02-27 | Nec Corp | Substrate for electronic device |
JPH0695554B2 (en) | 1987-10-12 | 1994-11-24 | 工業技術院長 | Method for forming single crystal magnesia spinel film |
US4999842A (en) | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
US5310707A (en) | 1990-03-28 | 1994-05-10 | Superconductivity Research Laboratory International | Substrate material for the preparation of oxide superconductors |
US5155658A (en) | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
US5270298A (en) | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
US5326721A (en) | 1992-05-01 | 1994-07-05 | Texas Instruments Incorporated | Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
JPH06151872A (en) | 1992-11-09 | 1994-05-31 | Mitsubishi Kasei Corp | Fet device |
DE69331538T2 (en) | 1992-12-01 | 2002-08-29 | Matsushita Electric Ind Co Ltd | Process for producing an electrical thin film |
US5828080A (en) | 1994-08-17 | 1998-10-27 | Tdk Corporation | Oxide thin film, electronic device substrate and electronic device |
US5635741A (en) | 1994-09-30 | 1997-06-03 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films by erbium donor doping |
US5635453A (en) * | 1994-12-23 | 1997-06-03 | Neocera, Inc. | Superconducting thin film system using a garnet substrate |
WO1997001854A1 (en) * | 1995-06-28 | 1997-01-16 | Bell Communication Research, Inc. | Barrier layer for ferroelectric capacitor integrated on silicon |
US5753934A (en) | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
FR2744578B1 (en) | 1996-02-06 | 1998-04-30 | Motorola Semiconducteurs | HIGH FREQUENCY AMPLIFIER |
US6002375A (en) | 1997-09-02 | 1999-12-14 | Motorola, Inc. | Multi-substrate radio-frequency circuit |
US6055179A (en) | 1998-05-19 | 2000-04-25 | Canon Kk | Memory device utilizing giant magnetoresistance effect |
-
2000
- 2000-07-24 US US09/624,527 patent/US6432546B1/en not_active Expired - Fee Related
-
2001
- 2001-07-19 CN CNA018132804A patent/CN1511350A/en active Pending
- 2001-07-19 JP JP2002514808A patent/JP2004517462A/en active Pending
- 2001-07-19 KR KR1020037001102A patent/KR100827216B1/en not_active IP Right Cessation
- 2001-07-19 EP EP01954763A patent/EP1307930A2/en not_active Withdrawn
- 2001-07-19 WO PCT/US2001/022676 patent/WO2002009203A2/en active Application Filing
- 2001-07-19 AU AU2001276987A patent/AU2001276987A1/en not_active Abandoned
- 2001-07-23 TW TW090117907A patent/TW508849B/en not_active IP Right Cessation
-
2002
- 2002-04-19 US US10/126,772 patent/US6750067B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248564A (en) * | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
Non-Patent Citations (4)
Title |
---|
CHEUNG J T ET AL: "Epitaxial La0.5Sr0.5CoO3 electrode films for ferroelectric device applications", INTEGRATED FERROELECTRICS, vol. 3, no. 2, 1993, NEW YORK, NY, US, pages 147 - 157, XP000972787, ISSN: 1058-4587 * |
GHONGE S G ET AL: "Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition", APPLIED PHYSICS LETTERS, vol. 64, no. 25, 20 June 1994 (1994-06-20), pages 3407 - 3409, XP002190658, ISSN: 0003-6951 * |
WANG Y ET AL: "Epitaxial ferroelectric Pb(Zr,Ti)O3 thin films on Si using SrTiO3 template layers", APPLIED PHYSICS LETTERS, vol. 80, no. 1, 7 January 2002 (2002-01-07), pages 97 - 99, XP002190660, ISSN: 0003-6951 * |
WU W ET AL: "Low-temperature growth and characterization of epitaxial La0.5Sr0.5CoO3/Pb(Zr0.52Ti0.48)O3/La0.5Sr0.5CoO3 capacitors on SrTiO3/TiN buffered Si(001) substrates", JOURNAL OF PHYSICS D (APPLIED PHYSICS), vol. 34, no. 11, June 2001 (2001-06-01), IOP PUBLISHING, UK, pages 1587 - 1591, XP002190659, ISSN: 0022-3727 * |
Also Published As
Publication number | Publication date |
---|---|
TW508849B (en) | 2002-11-01 |
JP2004517462A (en) | 2004-06-10 |
US6432546B1 (en) | 2002-08-13 |
KR20030029114A (en) | 2003-04-11 |
WO2002009203A2 (en) | 2002-01-31 |
CN1511350A (en) | 2004-07-07 |
KR100827216B1 (en) | 2008-05-07 |
US6750067B2 (en) | 2004-06-15 |
US20020164827A1 (en) | 2002-11-07 |
EP1307930A2 (en) | 2003-05-07 |
AU2001276987A1 (en) | 2002-02-05 |
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