WO2002012906A1 - Mikromechanisches bauelement - Google Patents
Mikromechanisches bauelement Download PDFInfo
- Publication number
- WO2002012906A1 WO2002012906A1 PCT/DE2001/002782 DE0102782W WO0212906A1 WO 2002012906 A1 WO2002012906 A1 WO 2002012906A1 DE 0102782 W DE0102782 W DE 0102782W WO 0212906 A1 WO0212906 A1 WO 0212906A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- cover cap
- stop
- movable
- micromechanical component
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
Definitions
- the invention is based on a micromechanical component of the independent type
- Micromechanical components are already known, in which movable structures are provided which are movable parallel to the surface of the substrate. These structures are surrounded by a frame on which a cover cap is attached.
- micromechanical component according to the invention with the features of the independent claim has the advantage that the deflections of the movable element are limited in a direction perpendicular to the surface of the substrate. This measure prevents excessive displacements of the movable element. This measure increases the operational reliability of the micromechanical component.
- the measures listed in the dependent claims allow advantageous developments and improvements of the micromechanical component according to the independent claim possible.
- the cover cap is particularly easy to achieve by etching recesses in a plate. Plate-shaped material made of silicon is particularly suitable. The deflection of the movable element can be further reduced by additional layers in the area of the stop. The cover cap is particularly easily connected to the frame by additional layers. The thickness of these connecting layers can be precisely controlled by introducing spacer beads.
- FIG. 1 shows a plan view of a substrate
- FIG. 2 shows a cross section through a micromechanical component
- FIG. 3 shows a bottom view of a cover cap
- FIG. 4 shows a detailed view of a connection area
- FIG. 5 shows a further cross section through a micromechanical component.
- the substrate 1 shows a top view of a substrate 1 on which a movable structure 2 is arranged.
- the substrate 1 is preferably a silicon substrate on which a movable structure 2 made of polysilicon is arranged.
- the movable structure 2 is firmly connected to the substrate 1 by anchoring blocks 10. Bending springs 11, which carry a seismic mass 15, are fastened to such anchoring blocks 10.
- the seismic mass 15 shown in FIG. 1 is attached to four anchoring blocks 10 by four spiral springs 11. Movable are on the seismic mass 15
- Electrodes 12 attached, which are arranged approximately perpendicular to the elongated seismic mass 15. Fixed electrodes 13 are arranged opposite the movable electrodes 12, which in turn are firmly connected to the substrate 1 by anchoring blocks 10.
- the movable structure 2 acts as an acceleration sensor, the measuring axis of which is predetermined by the arrow 14.
- a force acts on the seismic mass 15. Since the seismic mass 15, the spiral springs 11 and the movable electrodes 12 are not connected to the substrate 1, the force of the seismic mass 15 is bent due to this force effect Spiral springs 11, ie the seismic mass 15 and accordingly also the movable electrodes 12 are deflected in the direction of the axis 14. This deflection thus takes place parallel to the surface of the substrate 1. Due to the deflection, the distance between the movable electrodes 12 and the fixed electrodes 13 changes.
- the Capacitance between these two electrodes demonstrate the deflection of the seismic mass. Since this deflection is proportional to the acceleration present in the axis 14, the acceleration can be measured by the device shown in FIG. 1.
- the device shown in FIG. 1 is therefore an acceleration sensor.
- the invention is not limited to acceleration sensors, but is to be used for any movable structure which is arranged on the surface of a substrate 1.
- FIG. 2 shows a cross section through a micromechanical component which corresponds to a cross section along the line II-II in FIG. 1.
- FIG. 2 only corresponds to a cross section through FIG. 1 with respect to the substrate 1, the frame 3 and the movable structure 2.
- the substrate 1 is shown in cross-section, on which an anchoring block 10 is fastened, to which in turn a fixed electrode 13 is fastened.
- the fixed electrode 13 is only over the here
- Anchoring block 10 connected to the substrate 1, so that there is a space between the fixed electrode 13 and the substrate 1.
- the geometrical dimensions of the fixed electrode 13 are, however, designed in such a way that no or ' there is only a negligible deflection of the fixed electrode 13.
- the seismic mass 15, which is also at a distance from the substrate 1, can also be seen in the cross section in FIG.
- the seismic mass 15 is connected to the substrate only by the bending springs 11 and anchoring blocks 10 attached thereto, so that the seismic mass 15 can move as desired relative to the substrate.
- the flexibility of the seismic mass 15 relative to the substrate is determined by the spiral springs 11.
- the bending springs 11 are designed such that a particularly simple deflection takes place in the direction of the acceleration axis 14.
- a deflection in the direction of the axis 16 can also occur when very strong accelerations occur, as shown in FIG is shown, that is, perpendicular to the substrate. If there is a strong acceleration in the axis 16 and a component in the direction of the axis 14 at the same time, very strong deflections can occur, in particular it can happen that movable electrodes 12 come to rest on or behind the respective fixed electrodes 13 and so that the structures get caught in one another.
- the cap 4 is provided according to the invention with a stop 6 which limits the deflection of the seismic mass 15 in the axis 16, ie perpendicular to the substrate.
- the cap 4 can be seen in cross section in FIG. 2, which is connected to the frame 3 by means of connecting layers 5. Through the connection layers 5, a firm connection is produced between the cap 4 and the frame 3, in particular it is made possible to establish an airtight connection between the cap 4 and the frame 3. This makes it possible to enclose the movable element 2 in a defined pressure.
- the stop 6 is provided in the area of the movable structure 2. The remaining areas of the cover cap 4 are reduced in thickness by providing recesses 7 there.
- the cap 4 thus has its full thickness only in the connection area 8 in which it is connected to the frame 3 and in the area of the stop 6, the remaining areas are thinned out by recesses 7, so that in this area the distance between the micromechanical Structures and the cap 4 is larger.
- FIG. 3 shows a bottom view of the cover cap 4.
- the cap 4 is approximately rectangular, the stop 6 is provided in a central region and is completely surrounded by a recess 7.
- a connection area 8 is provided, which shows approximately the same geometrical dimensions as the frame 3 of FIG. 1. This connection area 8 is intended for connection to the frame 3 by means of the connection layers 5.
- Recess 7 formed as slopes. This is due to the fact that a silicon substrate was used as an example for a covering cap 4, which was processed by anisotropic etching.
- the anisotropic etching of silicon typically results in oblique transition regions which are caused by the crystal structure of the silicon plate.
- all other types of materials for the cover plate are conceivable, i.e.
- other materials such as glass, ceramic or the like can also be used.
- the structuring of glass or ceramic is then carried out using other etching processes, for example dry etching processes or corresponding other wet chemical etching processes.
- Cover plate 4 has the same thickness in its connecting area 8 and in the area of the stop 6.
- the distance between the stop 6 and the seismic mass 15 is thus predetermined by the thickness of the connecting layer 5.
- FIG. 4 shows a method of how the distance of the connecting layer 5 between the frame 3 and the connecting area 8 of the cover cap 4 can be adjusted with great precision.
- Connection layer 5 spacer balls 25 embedded which have a defined diameter. Adhesives or glass layers, for example, are used as the material for the connecting layer 5 and are then melted. The thickness of the layer is then determined by the diameter of the spacer balls 25.
- FIG. 5 shows another means which is suitable for influencing the distance between the stop 6 and the movable element or the seismic mass 15.
- an additional spacing layer 9 is provided in the area of the stop 6, which is thinner than the connecting layer 5 in terms of its thickness.
- the distance between the stop 6 and the seismic mass 15 can thus also be set to smaller values than the thickness of the connecting layer 5 become.
- This procedure is advantageous if the thickness of the connection layer 5 is relatively large, in particular if the thickness of the connection layer 5 is greater than the thickness of the movable structure 2 in the direction perpendicular to the substrate.
- the micromechanical component which is shown in FIG. 5 corresponds to the structure as has already been shown and described in FIG.
- the additional layer 9 can be used in addition to the spacer balls 25 of FIG. 4.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002517539A JP2004506203A (ja) | 2000-08-04 | 2001-07-21 | マイクロマシニング技術を用いた構成素子 |
DE50111649T DE50111649D1 (de) | 2000-08-04 | 2001-07-21 | Mikromechanisches bauelement |
EP01956366A EP1307750B1 (de) | 2000-08-04 | 2001-07-21 | Mikromechanisches bauelement |
US10/343,788 US20040025589A1 (en) | 2000-08-04 | 2001-07-21 | Micromechanical component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10038099A DE10038099A1 (de) | 2000-08-04 | 2000-08-04 | Mikromechanisches Bauelement |
DE10038099.9 | 2000-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002012906A1 true WO2002012906A1 (de) | 2002-02-14 |
Family
ID=7651337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/002782 WO2002012906A1 (de) | 2000-08-04 | 2001-07-21 | Mikromechanisches bauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US20040025589A1 (de) |
EP (1) | EP1307750B1 (de) |
JP (1) | JP2004506203A (de) |
DE (2) | DE10038099A1 (de) |
WO (1) | WO2002012906A1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006500233A (ja) * | 2002-09-26 | 2006-01-05 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | マイクロマシニング型の構成素子および方法 |
WO2010115445A1 (de) * | 2009-04-07 | 2010-10-14 | Siemens Aktiengesellschaft | Mikromechanisches system sowie verfahren zum erstellen eines mikromechanischen systems |
US8921957B1 (en) | 2013-10-11 | 2014-12-30 | Robert Bosch Gmbh | Method of improving MEMS microphone mechanical stability |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602005021754D1 (de) * | 2004-02-27 | 2010-07-22 | Atlantic Inertial Systems Ltd | Beschleunigungsmesser |
JP2006226743A (ja) * | 2005-02-16 | 2006-08-31 | Mitsubishi Electric Corp | 加速度センサ |
JP2007139576A (ja) * | 2005-11-18 | 2007-06-07 | Denso Corp | 半導体力学量センサの製造方法 |
US20070232107A1 (en) * | 2006-04-03 | 2007-10-04 | Denso Corporation | Cap attachment structure, semiconductor sensor device and method |
DE102006053290B4 (de) * | 2006-11-13 | 2023-08-03 | Robert Bosch Gmbh | Beschleunigungssensor |
DE102007002725A1 (de) * | 2007-01-18 | 2008-07-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gehäuse für in mobilen Anwendungen eingesetzte mikromechanische und mikrooptische Bauelemente |
JP5165294B2 (ja) * | 2007-07-06 | 2013-03-21 | 三菱電機株式会社 | 静電容量式加速度センサ |
US8011247B2 (en) * | 2008-06-26 | 2011-09-06 | Honeywell International Inc. | Multistage proof-mass movement deceleration within MEMS structures |
DE102009029095B4 (de) | 2009-09-02 | 2017-05-18 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
WO2011111540A1 (ja) * | 2010-03-08 | 2011-09-15 | アルプス電気株式会社 | 物理量センサ |
JP5771915B2 (ja) * | 2010-08-03 | 2015-09-02 | 大日本印刷株式会社 | Memsデバイス及びその製造方法 |
WO2013051068A1 (ja) * | 2011-10-07 | 2013-04-11 | 株式会社日立製作所 | 慣性センサ |
DE102011085023B4 (de) | 2011-10-21 | 2020-07-09 | Robert Bosch Gmbh | Bauelement und Verfahren zum Betrieb eines Bauelements |
DE102014202220B3 (de) * | 2013-12-03 | 2015-05-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines Deckelsubstrats und gehäustes strahlungsemittierendes Bauelement |
DE102014210852B4 (de) | 2014-06-06 | 2022-10-06 | Robert Bosch Gmbh | Bauteil mit zwei Halbleiter-Bauelementen, die über eine strukturierte Bond-Verbindungsschicht miteinander verbunden sind, und Verfahren zum Herstellen eines solchen Bauteils |
US20170023606A1 (en) * | 2015-07-23 | 2017-01-26 | Freescale Semiconductor, Inc. | Mems device with flexible travel stops and method of fabrication |
Citations (3)
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DE19530510A1 (de) * | 1994-08-18 | 1996-02-22 | Nippon Denso Co | Halbleitersensor mit aufgehängter bzw. beweglich gehaltener Mikrostruktur und Verfahren zu dessen Herstellung |
JPH09127151A (ja) * | 1995-11-01 | 1997-05-16 | Murata Mfg Co Ltd | 加速度センサ |
JPH09318656A (ja) * | 1996-05-31 | 1997-12-12 | Hitachi Ltd | 静電容量式加速度センサ |
Family Cites Families (12)
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JPH0823563B2 (ja) * | 1993-09-07 | 1996-03-06 | 日本電気株式会社 | 半導体加速度センサの製造方法 |
FR2710741B1 (fr) * | 1993-09-30 | 1995-10-27 | Commissariat Energie Atomique | Capteur électronique destiné à la caractérisation de grandeurs physiques et procédé de réalisation d'un tel capteur. |
JPH07159432A (ja) * | 1993-12-03 | 1995-06-23 | Matsushita Electric Works Ltd | 半導体加速度センサ |
JPH07280832A (ja) * | 1994-04-15 | 1995-10-27 | Nippondenso Co Ltd | 加速度検出装置 |
JP2658949B2 (ja) * | 1995-02-23 | 1997-09-30 | 日本電気株式会社 | 半導体加速度センサ |
JP3433570B2 (ja) * | 1995-05-26 | 2003-08-04 | 松下電工株式会社 | 半導体加速度センサ |
DE19526903B4 (de) * | 1995-07-22 | 2005-03-10 | Bosch Gmbh Robert | Drehratensensor |
JP3327088B2 (ja) * | 1995-12-25 | 2002-09-24 | 日産自動車株式会社 | 半導体加速度センサ |
FR2763694B1 (fr) * | 1997-05-23 | 1999-07-30 | Sextant Avionique | Micro-accelerometre a resonateur capacitif |
JP2000187041A (ja) * | 1998-12-24 | 2000-07-04 | Mitsubishi Electric Corp | 容量式加速度センサ及びその製造方法 |
US6262463B1 (en) * | 1999-07-08 | 2001-07-17 | Integrated Micromachines, Inc. | Micromachined acceleration activated mechanical switch and electromagnetic sensor |
JP3608455B2 (ja) * | 1999-11-30 | 2005-01-12 | 松下電工株式会社 | 半導体加速度センサ |
-
2000
- 2000-08-04 DE DE10038099A patent/DE10038099A1/de not_active Ceased
-
2001
- 2001-07-21 WO PCT/DE2001/002782 patent/WO2002012906A1/de active IP Right Grant
- 2001-07-21 DE DE50111649T patent/DE50111649D1/de not_active Expired - Lifetime
- 2001-07-21 JP JP2002517539A patent/JP2004506203A/ja active Pending
- 2001-07-21 EP EP01956366A patent/EP1307750B1/de not_active Expired - Lifetime
- 2001-07-21 US US10/343,788 patent/US20040025589A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19530510A1 (de) * | 1994-08-18 | 1996-02-22 | Nippon Denso Co | Halbleitersensor mit aufgehängter bzw. beweglich gehaltener Mikrostruktur und Verfahren zu dessen Herstellung |
JPH09127151A (ja) * | 1995-11-01 | 1997-05-16 | Murata Mfg Co Ltd | 加速度センサ |
JPH09318656A (ja) * | 1996-05-31 | 1997-12-12 | Hitachi Ltd | 静電容量式加速度センサ |
Non-Patent Citations (2)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 1997, no. 09 30 September 1997 (1997-09-30) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 04 31 March 1998 (1998-03-31) * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006500233A (ja) * | 2002-09-26 | 2006-01-05 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | マイクロマシニング型の構成素子および方法 |
WO2010115445A1 (de) * | 2009-04-07 | 2010-10-14 | Siemens Aktiengesellschaft | Mikromechanisches system sowie verfahren zum erstellen eines mikromechanischen systems |
US8887568B2 (en) | 2009-04-07 | 2014-11-18 | Siemens Aktiengesellschaft | Micromechanical system and method for building a micromechanical system |
US8921957B1 (en) | 2013-10-11 | 2014-12-30 | Robert Bosch Gmbh | Method of improving MEMS microphone mechanical stability |
Also Published As
Publication number | Publication date |
---|---|
EP1307750B1 (de) | 2006-12-13 |
DE10038099A1 (de) | 2002-02-21 |
DE50111649D1 (de) | 2007-01-25 |
US20040025589A1 (en) | 2004-02-12 |
JP2004506203A (ja) | 2004-02-26 |
EP1307750A1 (de) | 2003-05-07 |
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