WO2002016955A3 - Compound semiconductor hall sensor - Google Patents

Compound semiconductor hall sensor Download PDF

Info

Publication number
WO2002016955A3
WO2002016955A3 PCT/US2001/024559 US0124559W WO0216955A3 WO 2002016955 A3 WO2002016955 A3 WO 2002016955A3 US 0124559 W US0124559 W US 0124559W WO 0216955 A3 WO0216955 A3 WO 0216955A3
Authority
WO
WIPO (PCT)
Prior art keywords
accommodating buffer
layer
buffer layer
compound semiconductor
silicon
Prior art date
Application number
PCT/US2001/024559
Other languages
French (fr)
Other versions
WO2002016955A2 (en
Inventor
Lyndee Hilt
Jamal Ramdani
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001279196A priority Critical patent/AU2001279196A1/en
Publication of WO2002016955A2 publication Critical patent/WO2002016955A2/en
Publication of WO2002016955A3 publication Critical patent/WO2002016955A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Abstract

High quality epitaxial layers of compound semiconductor materials (1113) suitable for use in connection with Hall-effect devices can be grown overlying large silicon wafers (1101) by first growing an accommodating buffer layer (1110) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (1109) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
PCT/US2001/024559 2000-08-18 2001-08-03 Compound semiconductor hall sensor WO2002016955A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001279196A AU2001279196A1 (en) 2000-08-18 2001-08-03 Compound semiconductor hall sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64255800A 2000-08-18 2000-08-18
US09/642,558 2000-08-18

Publications (2)

Publication Number Publication Date
WO2002016955A2 WO2002016955A2 (en) 2002-02-28
WO2002016955A3 true WO2002016955A3 (en) 2002-06-27

Family

ID=24577094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/024559 WO2002016955A2 (en) 2000-08-18 2001-08-03 Compound semiconductor hall sensor

Country Status (3)

Country Link
AU (1) AU2001279196A1 (en)
TW (1) TW515097B (en)
WO (1) WO2002016955A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016181391A1 (en) * 2015-05-11 2016-11-17 Technion Research & Development Foundation Limited Image sensor and method of fabricating the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3670213A (en) * 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
JPS57118683A (en) * 1981-01-17 1982-07-23 Toshiba Corp Manufacture of callium arsenide hall device
US5406202A (en) * 1991-12-21 1995-04-11 Deutsche Itt Industries Gmbh Offset-compensated hall sensor having plural hall detectors having different geometrical orientations and having switchable directions
EP0682266A1 (en) * 1994-05-09 1995-11-15 General Motors Corporation Magnetic field sensor
US5528067A (en) * 1995-05-08 1996-06-18 Hughes Aircraft Company Magnetic field detection
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
EP0964259A1 (en) * 1997-02-28 1999-12-15 Asahi Kasei Electronics Co. Ltd. Magnetic sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3670213A (en) * 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
JPS57118683A (en) * 1981-01-17 1982-07-23 Toshiba Corp Manufacture of callium arsenide hall device
US5406202A (en) * 1991-12-21 1995-04-11 Deutsche Itt Industries Gmbh Offset-compensated hall sensor having plural hall detectors having different geometrical orientations and having switchable directions
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
EP0682266A1 (en) * 1994-05-09 1995-11-15 General Motors Corporation Magnetic field sensor
US5528067A (en) * 1995-05-08 1996-06-18 Hughes Aircraft Company Magnetic field detection
EP0964259A1 (en) * 1997-02-28 1999-12-15 Asahi Kasei Electronics Co. Ltd. Magnetic sensor

Also Published As

Publication number Publication date
AU2001279196A1 (en) 2002-03-04
TW515097B (en) 2002-12-21
WO2002016955A2 (en) 2002-02-28

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