WO2002017445A1 - Heat spreading layers for vertical cavity surface emitting lasers - Google Patents

Heat spreading layers for vertical cavity surface emitting lasers Download PDF

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Publication number
WO2002017445A1
WO2002017445A1 PCT/US2001/041822 US0141822W WO0217445A1 WO 2002017445 A1 WO2002017445 A1 WO 2002017445A1 US 0141822 W US0141822 W US 0141822W WO 0217445 A1 WO0217445 A1 WO 0217445A1
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vcsel
active region
heat spreading
inp
layers
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PCT/US2001/041822
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French (fr)
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Larry Coldren
Eric M. Hall
Shigeru Nakagawa
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Regents Of The University Of California, The
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Priority to AU2001285473A priority Critical patent/AU2001285473A1/en
Publication of WO2002017445A1 publication Critical patent/WO2002017445A1/en

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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Definitions

  • the present invention relates to a surface emitting semiconductor laser and a method for manufacturing the same. Especially, the present invention relates to a vertical-cavity surface-emitting semiconductor laser for long wavelengths (i.e., 1.3 to 1.55 ⁇ m) to be used as an optical source for a system of optical communication, optical interconnection, optical data-processing, or the like, in the field of optical data-communication or optical data-processing, and also to a method for manufacturing the novel vertical-cavity surface-emitting semiconductor lasers for long wavelengths.
  • a vertical-cavity surface-emitting semiconductor laser for long wavelengths i.e., 1.3 to 1.55 ⁇ m
  • VCSEL's vertical-cavity surface-emitting lasers
  • DBR distributed Bragg reflector
  • the mirror stacks are formed of multiple pairs of layers often referred to as mirror pairs.
  • the pairs of layers are formed of a material system generally consisting of two materials having different indices of refraction and being easily lattice matched to the other portions of the VCSEL.
  • a GaAs based VCSEL typically uses an material system wherein the different refractive index of each layer of a pair is achieved by altering the aluminum content x1 and x2 in the layers, more particularly the aluminum content x1 ranges from 0% to 50% and the aluminum content of x2 ranges from 50% to 100%.
  • the number of mirror pairs per stack may range from 20-40 pairs to achieve a high percentage of reflectivity, depending on the difference between the refractive indices of the layers. The large number of pairs increases the percentage of reflected light.
  • a VCSEL includes a first distributed Bragg reflector (DBR), also referred to as a mirror stack, formed on top of a substrate by semiconductor manufacturing techniques, an active region formed on top of the first mirror stack, and a second mirror stack formed on top of the active region.
  • DBR distributed Bragg reflector
  • the VCSEL is driven by current forced through the active region.
  • Lattice-matched, highly reflective AsSb-based DBRs eliminate the need for the complicated mirror schemes as mentioned above.
  • AIGaAs DBRs which have evolved over several years with many band-engineering schemes to produce electrically-mature mirrors
  • the AIAsSb/AIGaAsSb DBRs used in these lasers were, unfortunately, more resistive than would be desired. Combined with the poor thermal characteristics of these materials, the resulting high voltage leads to a large temperature rise in the active region which thereby limits the operation in these lasers to pulsed current.
  • a vertical-cavity surface-emitting laser (VCSEL) having at least one heat spreading layer is used for eliminating high voltage, thereby, allowing room temperature, continuous-wave (CW) operation of the VCSEL.
  • the at least one of the heat spreading layers reduce the VCSEL temperature by allowing the injected current and generated heat to bypass at least one the DBRs which have poor electrical and thermal conductivity.
  • a vertical- cavity surface-emitting laser (VCSEL) for decreasing threshold current density comprises: (i) a first reflecting surface, (ii) a second reflecting surface, (iii) an active region with a first surface and a second surface, (iv) a first heat spreading layer preferably doped with an n-type material between the first reflecting surface and the first surface of the active region, (v) a second heat spreading layer preferably doped with an n-type material between the second reflecting surface and the second surface of the active region, (vi) an aperture formed by selectively etching the active region to a predetermined ratio of the size of the active region to the size of a DBR.
  • the heat spreading layers reduce the VCSEL temperature by allowing the injected current and generated heat to bypass the reflecting surfaces which have poor electrical and thermal conductivity.
  • FIG. 1 depicts the VCSEL according to the present invention, depicting the various layers
  • FIG. 2 is a table listing the thermal conductivities and the electron/hole mobilities for the various materials considered for the heat spreading layers in the VCSEL;
  • FIG. 3 shows a plot of the CW-operating L-l characteristics of a VCSEL with a 20 ⁇ m diameter (as defined by the undercut aperture) as a function of temperature;
  • FIG. 4 depicts a plot of the temperature rise in the active region as a function of dissipated power
  • FIG. 5 indicates that the contact layers on the InP cladding and the tunnel junction, are located at standing-wave nulls in the laser cavity, so that free-carrier absorption is reduced as much as possible;
  • FIG. 6 shows the L-l curves of the VCSEL with a 16 ⁇ m etched pillar and an 8 ⁇ m undercut aperture under CW operation at various temperatures in the VCSEL;
  • FIG. 7 shows the injected current vs. voltage characteristics for different aperture diameters of the VCSEL
  • FIG. 8 is a plot of the thermal impedance as a function of aperture diameter of the VCSEL.
  • FIG. 9 is a plot showing a comparison in the temperature rise in the VCSEL as a function of the injected current for the air post VCSEL and the intracavity contact VCSEL.
  • Lattice-matched, highly reflective AsSb-based DBRs eliminate the need for the complicated mirror schemes mentioned above, and electrically-pumped AsSb- based VCSELs emitting at 1.55 ⁇ m have already been demonstrated [4].
  • the resulting high voltage led to a high temperature rise in the active region which limited operation in these lasers to pulsed current.
  • a small amount of Ga is generally added to the AIAsSb reflecting surfaces so as to stabilize these surfaces chemically, and make them more resistive to degradation without substantially increasing their index of refraction.
  • the present invention has a new design that has eliminated this high voltage and, therefore, has allowed room temperature, continuous-wave (CW) operation of AsSb-based VCSELs.
  • This new system preferably uses thick InP cladding layers which serve as contact layers and, as a result, avoids conduction through the mirrors. These layers, when the device is properly packaged, additionally act as heat-spreading layers, addressing the thermal issues associated with AsSb-based mirrors.
  • the design of the VCESL, as depicted by 1, is shown in Fig. 1.
  • the reflecting surfaces or DBR mirrors 2 are preferably undoped with alternating layers of Al a ⁇ Ga ⁇ « ⁇ As ⁇ Sb ⁇ . ⁇ /Ala2Ga ⁇ .a2AS ⁇ Sb ⁇ - ⁇ (a ⁇ >0.9, a 2 ⁇ 0.3).
  • the lower DBR 2 resides on a substrate 14.
  • the two heat spreading layers 4 and 6 i.e., the InP layers
  • the active region 8 is based on an alloy formed of AIGalnAs.
  • the active region 8 may also be based on alloys formed from InGaAsP, or InGaAs material system and contains five strain-compensated quantum wells.
  • a tunnel junction 10 may also be placed at the top InP/AIGalnAs interface, taking advantage of a favorable band-alignment to generate holes for the active region.
  • the tunnel junction is formed by the combination of InP and InAIAs based compounds. Holes are created by extraction of electrons from the valence band of the p-type layer in the tunnel junction. This design, therefore, allows two n-type contact layers which have both higher electrical conductivity and lower optical loss than similarly-doped p-type layers.
  • the tunnel junction itself is at a standing-wave null of the cavity mode to minimize the absorption associated with the higher doping at this interface.
  • the injected current is funneled from the outer contacts to the center of the structure below the mirrors by selectively etching the active region, and carriers are spread across the aperture opening by the finite resistance of the tunnel junction.
  • the heat spreading layers may be chosen such that optical reflections from their edges add in phase with reflections from the DBRs.
  • This contact scheme enables current to be injected through the InP cladding layers and bypass the Sb-based DBRs, and this eventually reduces series resistance of the VCSELs.
  • This structure also allows heat generated inside the VCSEL to bypass the DBRs in the same manner with the injected current, and most of the heat comes out of the VCSEL through the InP layers and metal contacts.
  • This provides the VCSEL with low thermal impedance in spite of the fairly low thermal conductivity of the Sb- based DBRs.
  • the high electron mobility and the high thermal conductivity of InP eventually lead to low electrical and thermal impedance into the VCSEL and prevent the VCSEL from heating up.
  • FIG. 2 indicates, generally, the mobility and thermal conductivity values for the different materials in the VCSEL.
  • CW-operating L-l characteristics of a VCSEL with a 20 ⁇ m diameter are shown in Fig. 3 as a function of temperature.
  • the small ripples that can be seen in the curves are caused by feedback from the air-substrate boundary, which can be improved by optimizing the antireflective coating.
  • the threshold current is 6.2mA at 20°C, corresponding to a threshold current density of 1.97 kA/cm 2 .
  • the maximum output power is 100 ⁇ W and the differential quantum efficiency is 5.6%.
  • the central lasing wavelength of the devices was 1.555 ⁇ m.
  • n-type InP which was measured on separate samples to be 6x10 "3 ⁇ -cm for the doping level used, leads to a low resistance structure.
  • the l-V characteristics for the device at 20°C are also shown in Fig. 3.
  • the VCSEL had a turn-on voltage of 0.9V and a differential resistance of 230 ⁇ .
  • the VCSEL was grown by molecular beam epitaxy in a single step.
  • the top and bottom DBRs 2 used 30.5 periods and 21.5 periods of a first AIGa AsSb layer' and a second AIGaAsSb layer respectively.
  • This material combination shows an index contrast of 0.47, which brings a calculated reflectivity of about greater than 99.9 % for the top DBR.
  • the measured transmission of the bottom DBR was 1.2 %.
  • the 1-3 ⁇ thick InP cladding layers 4 and 6 located on top and bottom of the active region were both n-type doped 5 x 10 17 cm "3 with Si, with top surface contact layers 10 nm thick doped 5 x 10 18 cm “3 with Si.
  • InP doped with Si to a level of 5 x 10 17 cm “3 shows an absorption coefficient of 2.5 cm -1 .
  • the tunnel junction 10 located between the top InP layer and the active region.
  • the n-type layer of the tunnel junction 10 is 20nm of InP doped 3 x 10 19 cm “3 with Si, and the p-type layer is 20nm of AflnAs doped 1 x 10 20 cm “3 with C.
  • the active region 8 consists of five strain compensated InAIGaAs QWs. This active region has large conduction band offsets and is promising for high temperature operation.
  • the whole cavity including the active region 8 and the InP cladding layers 4 and 6 is 1-3 ⁇ thick.
  • the grown cavity showed a resonance wavelength of 1550 nm, the active region showed photo luminescence peak at 1510 nm, and this gain offset is expected to put the threshold minimum around room temperature.
  • All heavily- doped layers, i.e. the contact layers on the InP cladding and the tunnel junction, are located at standing-wave nulls in the laser cavity, so that free-carrier absorption is reduced as much as possible. This is depicted in FIG. 5.
  • Exposing the InP contact layers is one of the most critical steps in a fabrication process of the VCSEL. Since the contact layer thickness should be minimized to reduce free carrier absorption in the cavity, various selective etchings were used to control etching depth precisely when the contact layers were exposed.
  • a low-voltage RIE using Cl 2 gas etches through the AIGaAsSb-based DBR but does not etch the InP contact layer, so that the etching stops at the very top of the contact layer. This transition is easily identified during the RIE using an in-situ laser monitor.
  • the RIE exposed the very thin (10nm) top contact layer by combining the selective RIE with the in-situ monitoring.
  • the bottom contact layer (10 nm) was exposed by removing the top InP cladding layer and the thin InAIGaAs-based active region. Two selective etches were used to expose this thin layer.
  • An RIE with CH /H 2 /Ar gases removes the InP cladding layer but stops at the top InAIAs layer located on top of the active region.
  • Etching of the active region using a mixture of citric acid and hydrogen peroxide exposes the bottom contact layer. This mixture etches the InAIGaAs-based active region but does not etch the InP contact layer with a selectivity of more than 100:1.
  • Fig. 6 shows the L-l curves of the VCSEL with a 16 ⁇ m etched pillar and an 8 ⁇ m undercut aperture under CW operation at various temperatures.
  • the threshold current and threshold current density are 800 ⁇ A and 1.6 kA/cm 2 , respectively, and the differential quantum efficiency is 23 % at maximum.
  • the maximum CW output power is 1.05 mW at 20 °C and 110 ⁇ W at 80 °C, and the VCSEL operates up to about 88 °C.
  • Fig. 7 shows the injected current vs. voltage characteristics for different aperture diameters.
  • Fig. 8 is a plot of the thermal impedance as a function of aperture diameter. Both figures also show the data for the air-post VCSELs, in which current is injected through the Sb- based DBRs. The intracavity contacts provide much lower electrical and thermal impedance compared with the air-post VCSELs.
  • the intracavity-contacted VCSEL with a 16 ⁇ m pillar and an 8 ⁇ m aperture shows a threshold voltage of 1.4 V and a thermal impedance of 2.2 °C/mW
  • the 15- ⁇ m air-post VCSEL shows a threshold voltage of 7.0V and a thermal impedance of 4.1 °C/mW.
  • the voltage and thermal impedance do not change much with the aperture diameter in the intracavity-contacted structures as can be seen in the air-post structure, and hence the aperture can be made smaller with little increase in the device temperature. Since a vertical flow of the heat or current in the VCSEL depends on cross section of the aperture, less dependence of the voltage and thermal impedance on the aperture size shows that, in the VCSELs, the InP cladding layers work as current and heat spreaders and a lateral flow in the InP cladding layers is dominant for both the injected current and generated heat.
  • the InP layers reduce the device temperature by allowing the injected current and generated heat to bypass the Sb-based quaternary DBR, which has poor electrical and thermal conductivity.
  • This improved VCSEL shows excellent performance, e.g. high output power, low threshold current, and high differential efficiency, under CW operation not only at room temperature but also at high temperatures greater than 80 °Celcius.

Abstract

A system and a method for reducing the temperature in a vertical-cavity surface-emitting laser, or VCSEL (1), including at least one heat spreading layer (4, 6) adjacent to one of the reflecting surfaces (2) in a VCSEL (1). The heat spreading layer (4, 6) has high thermal conductivity allowing heat to bypass one of the reflecting surfaces (2), thereby efficiently removing the heat away from the device (1). This also reduces the serial resistance and the thermal impedance of the VCSEL (1).

Description

HEAT SPREADING LAYERS FOR VERTICAL CAVITY SURFACE EMITTING LASERS
STATEMENT OF GOVERNMENT-SPONSORED RESEARCH
[0001]This invention was made with the support of the United States Government under Grant No. MDA972-98-1-0001, awarded by the Department of Defense (DARPA). The Government has certain rights in this invention under 35 U.S.C. §202
CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] The contents of this application are related to those provisional applications having serial numbers 60/227,165, 60/227,161 , and 60/226,866, filed August 22, 2000, and a provisional application having serial number 60/262,541, filed January 16, 2001. The contents of these related provisional applications are incorporated herein by reference. The contents of this application are also related to several non- provisional patent applications being filed concurrently herewith. These contents of the non-provisional patent applications are hereby incorporated in full by reference and have the following attorney docket reference numerals: 510015-263, 510015- 264, 510015-265, 510015-266, 510015-267, 510015-268, 510015-269, 510015-270, 510015-271 , 510015-272
[0003] Background of the Invention
[0004] 1. Field of the Invention: The present invention relates to a surface emitting semiconductor laser and a method for manufacturing the same. Especially, the present invention relates to a vertical-cavity surface-emitting semiconductor laser for long wavelengths (i.e., 1.3 to 1.55 μ m) to be used as an optical source for a system of optical communication, optical interconnection, optical data-processing, or the like, in the field of optical data-communication or optical data-processing, and also to a method for manufacturing the novel vertical-cavity surface-emitting semiconductor lasers for long wavelengths.
[0005] 2. General Background: Significant recent progress in the development of vertical-cavity surface-emitting lasers (VCSEL's) emitting at 1.3-1.55μm is quickly making these light sources a viable option as high-performance components for optical fiber networks. In addition to offering cost advantages through such features as on-wafer testing, VCSEL's also have inherent advantages over edge-emitters such as scalability to two-dimensional arrays. Although many of the best results for these devices have resulted from the wafer-fusion or metamorphic growth of AIGaAs-based distributed Bragg reflector (DBR) mirrors with active regions, there is still considerable interest in the monolithic growth of long-wavelength VCSEL's. Essentially, lattice-matched, highly reflective AsSb-based DBRs eliminate the need for the complicated mirror schemes.
[0006] The mirror stacks are formed of multiple pairs of layers often referred to as mirror pairs. The pairs of layers are formed of a material system generally consisting of two materials having different indices of refraction and being easily lattice matched to the other portions of the VCSEL. For example, a GaAs based VCSEL typically uses an
Figure imgf000004_0001
material system wherein the different refractive index of each layer of a pair is achieved by altering the aluminum content x1 and x2 in the layers, more particularly the aluminum content x1 ranges from 0% to 50% and the aluminum content of x2 ranges from 50% to 100%. In conventional devices, the number of mirror pairs per stack may range from 20-40 pairs to achieve a high percentage of reflectivity, depending on the difference between the refractive indices of the layers. The large number of pairs increases the percentage of reflected light.
[0007] In summary, a VCSEL includes a first distributed Bragg reflector (DBR), also referred to as a mirror stack, formed on top of a substrate by semiconductor manufacturing techniques, an active region formed on top of the first mirror stack, and a second mirror stack formed on top of the active region. The VCSEL is driven by current forced through the active region.
SUMMARY OF THE INVENTION
[0008] Lattice-matched, highly reflective AsSb-based DBRs eliminate the need for the complicated mirror schemes as mentioned above. Unlike AIGaAs DBRs, which have evolved over several years with many band-engineering schemes to produce electrically-mature mirrors, the AIAsSb/AIGaAsSb DBRs used in these lasers were, unfortunately, more resistive than would be desired. Combined with the poor thermal characteristics of these materials, the resulting high voltage leads to a large temperature rise in the active region which thereby limits the operation in these lasers to pulsed current. [0009] Accordingly, in one embodiment of the present invention, a vertical-cavity surface-emitting laser (VCSEL) having at least one heat spreading layer is used for eliminating high voltage, thereby, allowing room temperature, continuous-wave (CW) operation of the VCSEL. The at least one of the heat spreading layers reduce the VCSEL temperature by allowing the injected current and generated heat to bypass at least one the DBRs which have poor electrical and thermal conductivity.
[0010] Accordingly, in another embodiment of the present invention, a vertical- cavity surface-emitting laser (VCSEL) for decreasing threshold current density comprises: (i) a first reflecting surface, (ii) a second reflecting surface, (iii) an active region with a first surface and a second surface, (iv) a first heat spreading layer preferably doped with an n-type material between the first reflecting surface and the first surface of the active region, (v) a second heat spreading layer preferably doped with an n-type material between the second reflecting surface and the second surface of the active region, (vi) an aperture formed by selectively etching the active region to a predetermined ratio of the size of the active region to the size of a DBR. The heat spreading layers reduce the VCSEL temperature by allowing the injected current and generated heat to bypass the reflecting surfaces which have poor electrical and thermal conductivity.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] In order that the manner in which the above-recited advantages and objects of the invention are attained, as well as others which will become apparent, more particular description of the invention briefly summarized above may be had by reference to the specific embodiments thereof that are illustrated in the appended drawings. It is to be understood, however, that the appended drawings illustrate only typical embodiments of the invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
[0012] In the drawings:
[0013] FIG. 1 depicts the VCSEL according to the present invention, depicting the various layers;
[0014] FIG. 2 is a table listing the thermal conductivities and the electron/hole mobilities for the various materials considered for the heat spreading layers in the VCSEL; [0015] FIG. 3 shows a plot of the CW-operating L-l characteristics of a VCSEL with a 20μm diameter (as defined by the undercut aperture) as a function of temperature;
[0016] FIG. 4 depicts a plot of the temperature rise in the active region as a function of dissipated power;
[0017] FIG. 5 indicates that the contact layers on the InP cladding and the tunnel junction, are located at standing-wave nulls in the laser cavity, so that free-carrier absorption is reduced as much as possible;
[0018] FIG. 6 shows the L-l curves of the VCSEL with a 16 μm etched pillar and an 8 μm undercut aperture under CW operation at various temperatures in the VCSEL;
[0019] FIG. 7 shows the injected current vs. voltage characteristics for different aperture diameters of the VCSEL;
[0020] FIG. 8 is a plot of the thermal impedance as a function of aperture diameter of the VCSEL; and
[0021] FIG. 9 is a plot showing a comparison in the temperature rise in the VCSEL as a function of the injected current for the air post VCSEL and the intracavity contact VCSEL.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION
[0022] Lattice-matched, highly reflective AsSb-based DBRs eliminate the need for the complicated mirror schemes mentioned above, and electrically-pumped AsSb- based VCSELs emitting at 1.55μm have already been demonstrated [4]. Unlike AIGaAs DBRs, which have evolved over several years with many band-engineering schemes to produce electrically-mature mirrors, the AlaιGaι-a1AsxSbι-χ/Ala2Gaι. a2AsxSbi.x (aι>0.9, a2<0.3,x>0.5) DBRs used in these lasers were, unfortunately, more resistive than would be desired. Combined with the poor thermal characteristics of these materials, the resulting high voltage led to a high temperature rise in the active region which limited operation in these lasers to pulsed current. A small amount of Ga is generally added to the AIAsSb reflecting surfaces so as to stabilize these surfaces chemically, and make them more resistive to degradation without substantially increasing their index of refraction.
[0023] Accordingly, the present invention has a new design that has eliminated this high voltage and, therefore, has allowed room temperature, continuous-wave (CW) operation of AsSb-based VCSELs. This new system preferably uses thick InP cladding layers which serve as contact layers and, as a result, avoids conduction through the mirrors. These layers, when the device is properly packaged, additionally act as heat-spreading layers, addressing the thermal issues associated with AsSb-based mirrors.
[0024] The design of the VCESL, as depicted by 1, is shown in Fig. 1. The reflecting surfaces or DBR mirrors 2 are preferably undoped with alternating layers of AlaιGaι«ιAsχSbι.χ/Ala2Gaι.a2ASχSbι-χ (aι>0.9, a2<0.3). The lower DBR 2 resides on a substrate 14. The two heat spreading layers 4 and 6 (i.e., the InP layers) are 1-3λ thick and doped n-type with silicon to a level of 5x1017/cm3. The active region 8 is based on an alloy formed of AIGalnAs. Altemateively, the active region 8 may also be based on alloys formed from InGaAsP, or InGaAs material system and contains five strain-compensated quantum wells. A tunnel junction 10 may also be placed at the top InP/AIGalnAs interface, taking advantage of a favorable band-alignment to generate holes for the active region. Preferably, the tunnel junction is formed by the combination of InP and InAIAs based compounds. Holes are created by extraction of electrons from the valence band of the p-type layer in the tunnel junction. This design, therefore, allows two n-type contact layers which have both higher electrical conductivity and lower optical loss than similarly-doped p-type layers. The tunnel junction itself is at a standing-wave null of the cavity mode to minimize the absorption associated with the higher doping at this interface. The injected current is funneled from the outer contacts to the center of the structure below the mirrors by selectively etching the active region, and carriers are spread across the aperture opening by the finite resistance of the tunnel junction.
[0025] From a material standpoint, the heat spreading layers may be chosen such that optical reflections from their edges add in phase with reflections from the DBRs.
[0026] Bandgap engineering is a well-established technology and has been used to reduce voltage drop across DBRs, but it does not address the reduction of thermal impedance. InP brings a benefit of high thermal conductivity in the Sb-based DBR as a low index material. However, the thermal impedance of this DBR can be expected to reduce only a factor of two, since heat flows through the DBR and AIAsGaSb still dominates the thermal conductivity. [0027] The tunnel junction 10 located between the top reflecting surface, or DBR, and the active region generates holes for the quantum wells and allows the InP layers to be n-type. Only the InP layers and the tunnel junction are doped. This contact scheme enables current to be injected through the InP cladding layers and bypass the Sb-based DBRs, and this eventually reduces series resistance of the VCSELs. This structure also allows heat generated inside the VCSEL to bypass the DBRs in the same manner with the injected current, and most of the heat comes out of the VCSEL through the InP layers and metal contacts. This provides the VCSEL with low thermal impedance in spite of the fairly low thermal conductivity of the Sb- based DBRs. The high electron mobility and the high thermal conductivity of InP eventually lead to low electrical and thermal impedance into the VCSEL and prevent the VCSEL from heating up. FIG. 2 indicates, generally, the mobility and thermal conductivity values for the different materials in the VCSEL.
[0028] The CW-operating L-l characteristics of a VCSEL with a 20μm diameter (as defined by the undercut aperture) are shown in Fig. 3 as a function of temperature. The small ripples that can be seen in the curves are caused by feedback from the air-substrate boundary, which can be improved by optimizing the antireflective coating. The threshold current is 6.2mA at 20°C, corresponding to a threshold current density of 1.97 kA/cm2. At this temperature, the maximum output power is 100μW and the differential quantum efficiency is 5.6%. The central lasing wavelength of the devices was 1.555μm. The high electrical conductivity of n-type InP, which was measured on separate samples to be 6x10"3 Ω-cm for the doping level used, leads to a low resistance structure. The l-V characteristics for the device at 20°C are also shown in Fig. 3. In this embodiment, the VCSEL had a turn-on voltage of 0.9V and a differential resistance of 230Ω.
[0029] The lower dissipated powers resulting from these good electrical characteristics directly lead to reduced heating in the devices. Based on a measured thermal impedance of 1.1°C/mW for a 22μm device and 1.6°C/mW for a 25μm device from the first generation of AsSb-based VCSELs, the temperature rise in the active region as a function of dissipated power is plotted in Fig. 4.
[0030] As seen from FIG. 4, although the-first generation of AsSb-based VCSELs had very low threshold current densities, the high voltage introduced by the un- optimized mirrors led to a large dissipated power and a corresponding large temperature rise in the active region. The temperature rise at threshold, in fact, was over 100°C. For the new design, the temperature rise at threshold is only ~19°C. The thermal impedance values thereby indicate a substantial improvement in the heat management of the devices with the InP contact layers. Further improvements in the thermal impedance are expected, therefore, when these devices are flip-chip bonded to a heat-sinking substrate and heat generated in the active region can be conducted to the heat-sink through the InP layers which have a very high thermal conductivity.
[0031] The VCSEL was grown by molecular beam epitaxy in a single step. The top and bottom DBRs 2 used 30.5 periods and 21.5 periods of a first AIGa AsSb layer' and a second AIGaAsSb layer respectively. This material combination shows an index contrast of 0.47, which brings a calculated reflectivity of about greater than 99.9 % for the top DBR. The measured transmission of the bottom DBR was 1.2 %. The 1-3λ thick InP cladding layers 4 and 6 located on top and bottom of the active region were both n-type doped 5 x 1017 cm"3 with Si, with top surface contact layers 10 nm thick doped 5 x 1018 cm"3 with Si. InP doped with Si to a level of 5 x 1017 cm"3 shows an absorption coefficient of 2.5 cm-1. The tunnel junction 10 located between the top InP layer and the active region. The n-type layer of the tunnel junction 10 is 20nm of InP doped 3 x 1019 cm"3 with Si, and the p-type layer is 20nm of AflnAs doped 1 x 1020 cm"3 with C. The active region 8 consists of five strain compensated InAIGaAs QWs. This active region has large conduction band offsets and is promising for high temperature operation.
[0032] The whole cavity including the active region 8 and the InP cladding layers 4 and 6 is 1-3λ thick. The grown cavity showed a resonance wavelength of 1550 nm, the active region showed photo luminescence peak at 1510 nm, and this gain offset is expected to put the threshold minimum around room temperature. All heavily- doped layers, i.e. the contact layers on the InP cladding and the tunnel junction, are located at standing-wave nulls in the laser cavity, so that free-carrier absorption is reduced as much as possible. This is depicted in FIG. 5.
[0033] Exposing the InP contact layers is one of the most critical steps in a fabrication process of the VCSEL. Since the contact layer thickness should be minimized to reduce free carrier absorption in the cavity, various selective etchings were used to control etching depth precisely when the contact layers were exposed. A low-voltage RIE using Cl2 gas etches through the AIGaAsSb-based DBR but does not etch the InP contact layer, so that the etching stops at the very top of the contact layer. This transition is easily identified during the RIE using an in-situ laser monitor. Although the selectivity of AIGaAsSb to InP is not so large (around 6:1), the RIE exposed the very thin (10nm) top contact layer by combining the selective RIE with the in-situ monitoring. The bottom contact layer (10 nm) was exposed by removing the top InP cladding layer and the thin InAIGaAs-based active region. Two selective etches were used to expose this thin layer. An RIE with CH /H2/Ar gases removes the InP cladding layer but stops at the top InAIAs layer located on top of the active region. Etching of the active region using a mixture of citric acid and hydrogen peroxide exposes the bottom contact layer. This mixture etches the InAIGaAs-based active region but does not etch the InP contact layer with a selectivity of more than 100:1.
[0034] The L-l characteristics of the VCSELs were measured at various temperatures both under CW and pulsed operation. Fig. 6 shows the L-l curves of the VCSEL with a 16 μm etched pillar and an 8 μm undercut aperture under CW operation at various temperatures. At 25°C, the threshold current and threshold current density are 800 μA and 1.6 kA/cm2, respectively, and the differential quantum efficiency is 23 % at maximum. The maximum CW output power is 1.05 mW at 20 °C and 110 μW at 80 °C, and the VCSEL operates up to about 88 °C.
[0035] Excellent results, such as high temperature operation and high output power, as demonstrated by the present invention, are attributed to three primary benefits resulting from the VCSEL structure developed in this work: low operating voltage, low thermal impedance, and low scattering loss.
[0036] Low values of operating voltage and thermal impedance result from the intracavity-contacted structure with the thick, n-type InP layers. Fig. 7 shows the injected current vs. voltage characteristics for different aperture diameters. Fig. 8 is a plot of the thermal impedance as a function of aperture diameter. Both figures also show the data for the air-post VCSELs, in which current is injected through the Sb- based DBRs. The intracavity contacts provide much lower electrical and thermal impedance compared with the air-post VCSELs. The intracavity-contacted VCSEL with a 16 μm pillar and an 8 μm aperture shows a threshold voltage of 1.4 V and a thermal impedance of 2.2 °C/mW, whereas the 15-μm air-post VCSEL shows a threshold voltage of 7.0V and a thermal impedance of 4.1 °C/mW. These differences indicate that, in the structure, both the injected current and generated heat bypass the AIAsSb/AIGaAsSb DBRs, which have poor thermal and electrical conductivity.
[0037] These low values eventually decrease the device temperature, resulting in good thermal properties of the VCSELs. This is depicted in FIG. 9. The temperature rise in the InP intracavity VCSEL is less than 10 °C at threshold, which is much lower than the air-post VCSELs (> 100 °C), even though the aperture, which corresponds to a cross section of current and heat paths, is smaller for the VCSEL (8 μm) than for the air-post (15 μm).
[0038] Furthermore, the voltage and thermal impedance do not change much with the aperture diameter in the intracavity-contacted structures as can be seen in the air-post structure, and hence the aperture can be made smaller with little increase in the device temperature. Since a vertical flow of the heat or current in the VCSEL depends on cross section of the aperture, less dependence of the voltage and thermal impedance on the aperture size shows that, in the VCSELs, the InP cladding layers work as current and heat spreaders and a lateral flow in the InP cladding layers is dominant for both the injected current and generated heat.
[0039] Thus, in a nutshell, the InP layers reduce the device temperature by allowing the injected current and generated heat to bypass the Sb-based quaternary DBR, which has poor electrical and thermal conductivity. This improved VCSEL shows excellent performance, e.g. high output power, low threshold current, and high differential efficiency, under CW operation not only at room temperature but also at high temperatures greater than 80 °Celcius.
[0040] While the specification describes particular embodiments of the present invention, those of ordinary skill can devise variations of the present invention without departing from the inventive concept. For example, a suitable high thermal conductivity material may be used in place of the InP layers. Alternatively, there could be one or more layers of these high thermal conductivity materials.

Claims

CLAIMS: We claim the following:
1. A method for reducing the temperature in a vertical-cavity surface-emitting laser (VCSEL) , the method comprising:
forming at least one of a heat spreading layers adjacent at least one of a reflecting surfaces in a VCSEL;
said at least one of the heat spreading layers reducing the VCSEL temperature by allowing heat to bypass said one of the reflecting surfaces.
2. The method according to claim 1 , wherein at least one of the heat spreading layers is doped with an n-type material.
3. The method according to claim 2, wherein the n-type material includes an InP compound.
4. The method according to claim 1, wherein at least one of the reflecting surfaces is a Distributed Bragg Reflector (DBR).
5. The method according to claim 1 , further comprising the step of forming a tunnel junction between an apertured active region and the at least one of the reflecting surfaces.
6. The method according to claim 5, wherein the active region comprises an alloy of InAlGaAs approximately lattice matched to InP.
7. The method according to claim 5, wherein the active region comprises an alloy of InGaAsP approximately lattice matched to InP.
8. The method according to claim 5, wherein the active region comprises an alloy of InGaAs approximately lattice matched to InP.
9. The method according to claim 4, wherein the DBR is made of alternating layers of AlaιGaι-aiASbSbι-b and
Figure imgf000012_0001
10. The method according to claim 9, wherein b is greater than about 0.5, a1 is greater than about 0.9, and a2 is less than about 0.3.
11. The method according to claim 4, wherein the DBR is undoped.
12. The method according to claim 1, wherein the VCSEL exhibits continuous wave operation at temperatures greater than about 80 degrees Celsius.
13. The method according to claim 5, wherein the tunnel junction comprises of n- type InP and p-type InAIAs.
14. The method according to claim 1 , wherein the heat spreading layer has a thickness of about 1-3λ.
15. The method according to claim 5, wherein a mixture selectively etches the active region to form an aperture in the VCSEL, said mixture precluding substantial etching of the heat spreading layer.
16. A method for reducing the thermal impedance in a vertical-cavity surface-emitting laser (VCSEL) , the method comprising:
forming a first heat spreading layer between a first reflecting surface and an active region in a VCSEL;
providing a second heat spreading layer between a second reflecting surface and the active region in a VCSEL; and
said first and second heat spreading layers reduce the thermal impedance in the VCSEL by allowing an injected current to bypass the reflecting surfaces.
17. The method according to claim 16, wherein the first and the second heat spreading layers are doped with an n-type material.
18. The method according to claim 17, wherein the n-type material includes an InP compound.
19. The method according to claim 16, wherein the first and the second reflecting surfaces are Distributed Bragg Reflectors (DBRs).
20. The method according to claim 16, further comprising the step of forming a tunnel junction between an apertured active region and the first reflecting surface.
21. The method according to claim 20, wherein the active region comprises of an alloy of InAIGaAs approximately lattice matched to InP.
22. The method according to claim 20, wherein the active region comprises an alloy of InGaAsP approximately lattice matched to InP.
23. The method according to claim 20, wherein the active region comprises an alloy of InGaAs approximately lattice matched to InP.
24. The method according to claim 17, wherein the DBR is made of alternating layers of AlaiGa-i-aiASbSb-i-b and Ala2Gaι-a2ASbSbι-b.
25. The method according to claim 20, wherein b is greater than about 0.5, a1 is greater than about 0.9, and a2 is less than about 0.3.
26. The method according to claim 19, wherein the DBRs are undoped.
23. The method according to claim 16, wherein the VCSEL exhibits continuous wave operation at temperatures greater than about 80 degrees Celsius.
27. The method according to claim 20, wherein the tunnel junction comprises of n- type InP and p-type InAIAs.
28. The method according to claim 16, wherein the heat spreading layers have a thickness of about 1-3λ.
29. The method according to claim 20, wherein a mixture selectively etches the active region to form an aperture in the VCSEL, said mixture precluding substantial etching of the heat spreading layer.
30. A vertical-cavity surface-emitting laser (VCSEL) operating at a reduced temperature, the VCSEL comprising:
a first and a second reflecting surface in a VCSEL;
at least one active region in the VCSEL; a first and a second heat spreading layer in the VCSEL; and
the first and second heat spreading layers allowing heat generated in the VCSEL to bypass the first and second reflecting surfaces, thereby reducing the temperature of the VCSEL.
31. The vertical-cavity surface-emitting laser (VCSEL) according to claim 30, wherein the first and second heat spreading layers are chosen such that optical reflections from their edges add in phase with reflections from the first and second reflecting surface.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720585B1 (en) 2001-01-16 2004-04-13 Optical Communication Products, Inc. Low thermal impedance DBR for optoelectronic devices
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US7860143B2 (en) 2004-04-30 2010-12-28 Finisar Corporation Metal-assisted DBRs for thermal management in VCSELs
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
JP2001085789A (en) * 1999-09-13 2001-03-30 Furukawa Electric Co Ltd:The Surface-emitting-type semiconductor laser element and manufacturing method therefor
US6653158B2 (en) * 2000-08-22 2003-11-25 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs and method of fabricating same
US6696308B1 (en) * 2000-10-27 2004-02-24 Chan-Long Shieh Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
US6589805B2 (en) * 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US6782019B2 (en) * 2001-08-16 2004-08-24 Applied Optoelectronics, Inc. VCSEL with heat-spreading layer
DE10147888A1 (en) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optically pumped vertically emitting semiconductor laser
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6658041B2 (en) * 2002-03-20 2003-12-02 Agilent Technologies, Inc. Wafer bonded vertical cavity surface emitting laser systems
US6801558B2 (en) * 2002-06-14 2004-10-05 Agilent Technologies, Inc. Material systems for long wavelength lasers grown on InP substrates
US6750071B2 (en) * 2002-07-06 2004-06-15 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL
US7126750B2 (en) * 2002-07-08 2006-10-24 John Gilmary Wasserbauer Folded cavity semiconductor optical amplifier (FCSOA)
US6813297B2 (en) * 2002-07-16 2004-11-02 Agilent Technologies, Inc. Material systems for long wavelength lasers grown on GaSb or InAs substrates
US6931045B1 (en) * 2002-08-12 2005-08-16 Sandia Corporation Distributed Bragg reflectors with reduced optical absorption
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6765238B2 (en) * 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
DE10253908B4 (en) * 2002-09-24 2010-04-22 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
KR100523484B1 (en) * 2002-11-11 2005-10-24 한국전자통신연구원 Method for fabricating semiconductor optical devices having current-confined structure
DE10305079B4 (en) * 2002-11-27 2005-04-28 Vertilas Gmbh Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser
US6901096B2 (en) * 2002-12-20 2005-05-31 Finisar Corporation Material system for Bragg reflectors in long wavelength VCSELs
NO324780B1 (en) * 2002-12-27 2007-12-10 Leiv Eiriksson Nyfotek As Process for Hydrochloric Acid Etching of AlGaInAsSb Structures and Use of Watty Acid Etchant
KR20050090468A (en) * 2003-02-04 2005-09-13 버티라스 게엠베하 Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser
US7180923B2 (en) * 2003-02-13 2007-02-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Laser employing a zinc-doped tunnel-junction
DE10313609B4 (en) * 2003-03-26 2005-07-14 Osram Opto Semiconductors Gmbh Semiconductor laser with reduced reaction sensitivity
US7061022B1 (en) * 2003-08-26 2006-06-13 United States Of America As Represented By The Secretary Of The Army Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers
GB2411383A (en) * 2004-02-25 2005-08-31 Mark Jason Starnes Thin turntable
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
EP1780849B1 (en) * 2004-06-11 2013-01-30 Ricoh Company, Ltd. Surface emitting laser diode and its manufacturing method
US7184454B2 (en) * 2004-06-25 2007-02-27 Finisar Corporation Light emitting device with an integrated monitor photodiode
US8357849B2 (en) * 2004-09-22 2013-01-22 The Trustees Of Princeton University Organic photosensitive devices
KR100627703B1 (en) * 2004-12-14 2006-09-26 한국전자통신연구원 hybrid metal-bonded vertical cavity surface emitting laser and fabricating method thereof
US7277463B2 (en) * 2004-12-30 2007-10-02 Finisar Corporation Integrated light emitting device and photodiode with ohmic contact
KR100673499B1 (en) * 2005-01-13 2007-01-24 한국과학기술연구원 Distributed Bragg's Reflector Made By Digital-Alloy Multinary Compound Semiconductor
JP4728656B2 (en) * 2005-02-09 2011-07-20 古河電気工業株式会社 Surface emitting laser element
JP2006294811A (en) * 2005-04-08 2006-10-26 Fuji Xerox Co Ltd Tunnel-junction surface emitting semiconductor laser element and manufacturing method thereof
JP5017804B2 (en) * 2005-06-15 2012-09-05 富士ゼロックス株式会社 Tunnel junction type surface emitting semiconductor laser device and manufacturing method thereof
US20070025407A1 (en) * 2005-07-29 2007-02-01 Koelle Bernhard U Long-wavelength VCSEL system with heat sink
US7693204B2 (en) * 2006-02-03 2010-04-06 Ricoh Company, Ltd. Surface-emitting laser device and surface-emitting laser array including same
WO2007103527A2 (en) * 2006-03-07 2007-09-13 Brenner Mary K Red light laser
JP5095260B2 (en) * 2006-05-15 2012-12-12 富士通株式会社 Manufacturing method of semiconductor light emitting device
US7680162B2 (en) * 2006-12-06 2010-03-16 Electronics And Telecommunications Research Institute Long wavelength vertical cavity surface emitting laser device and method of fabricating the same
DE102007003282B4 (en) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED chip
CN101939882B (en) * 2008-02-12 2013-02-13 株式会社理光 Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
DE102008014193A1 (en) 2008-03-14 2009-09-24 Universität Stuttgart Vertical resonator laser
US8891571B2 (en) * 2008-05-02 2014-11-18 Ricoh Company, Ltd. Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system
JP5669364B2 (en) * 2008-06-11 2015-02-12 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
US7929588B2 (en) * 2009-01-24 2011-04-19 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Semiconductor devices and methods for generating light
KR101166133B1 (en) 2010-02-19 2012-07-23 한국광기술원 Light Emitting Diode including Selective Etching Layer and Its Manufacturing Method
US20130032825A1 (en) * 2010-08-31 2013-02-07 John Gilmary Wasserbauer Resonant Optical Cavity Semiconductor Light Emitting Device
US8891569B2 (en) 2011-03-09 2014-11-18 Koninklijke Philips N.V. VCSEL array with increased efficiency
CN102832537B (en) * 2012-09-14 2014-08-06 长春理工大学 Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure
CN106716748B (en) * 2014-09-23 2020-09-04 赫普塔冈微光有限公司 Compact, power efficient stacked broadband optical transmitter
US10396527B2 (en) * 2017-06-14 2019-08-27 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser with high modulation speed
CN110959234B (en) * 2017-07-17 2021-08-13 统雷有限公司 Mid-infrared vertical cavity laser
CN108233176B (en) * 2018-01-28 2020-07-28 海南师范大学 Electrical injection GaN vertical cavity surface emitting laser structure and preparation method thereof
US11563307B2 (en) 2018-10-01 2023-01-24 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser
CN111351811B (en) * 2018-12-24 2021-04-13 清华大学 Crystal electron diffraction data acquisition method and device
CN109755334B (en) * 2018-12-29 2020-10-13 苏州焜原光电有限公司 Growing method of AlGaAsSb four-component material
CN109728502B (en) * 2019-01-08 2020-07-31 扬州乾照光电有限公司 Vertical cavity surface emitting laser epitaxial structure and preparation method thereof
US11441484B2 (en) * 2019-03-20 2022-09-13 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser device
WO2020206621A1 (en) * 2019-04-09 2020-10-15 Peng Du Superlattice absorber for detector
US11362486B2 (en) 2019-05-06 2022-06-14 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser with controlled overshoot
US11165222B2 (en) 2019-05-06 2021-11-02 Mellanox Technologies, Ltd. Optically matched vertical-cavity surface-emitting laser (VCSEL) with passivation
US20210305782A1 (en) 2020-03-25 2021-09-30 Array Photonics, Inc. Intracavity contact vcsel structure and method for forming the same
US11588299B2 (en) * 2020-04-07 2023-02-21 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser fabrication on large wafer
US11616343B2 (en) 2020-05-21 2023-03-28 Lumentum Operations Llc Vertical-cavity surface-emitting laser with a tunnel junction
US11855413B2 (en) 2020-06-22 2023-12-26 Lumentum Operations Llc Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode
US11876350B2 (en) 2020-11-13 2024-01-16 Ii-Vi Delaware, Inc. Multi-wavelength VCSEL array and method of fabrication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
WO1998007218A1 (en) * 1996-08-09 1998-02-19 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726492A (en) * 1980-07-24 1982-02-12 Nec Corp Semiconductor laser
US4855013A (en) * 1984-08-13 1989-08-08 Agency Of Industrial Science And Technology Method for controlling the thickness of a thin crystal film
US4829347A (en) 1987-02-06 1989-05-09 American Telephone And Telegraph Company, At&T Bell Laboratories Process for making indium gallium arsenide devices
JPS6461081A (en) 1987-09-01 1989-03-08 Japan Res Dev Corp Distributed-feedback type semiconductor laser and manufacture thereof
US5082799A (en) 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5168071A (en) * 1991-04-05 1992-12-01 At&T Bell Laboratories Method of making semiconductor devices
US5283844A (en) * 1992-03-05 1994-02-01 Mcdonnell Douglas Corporation Monolithic active waveguide optical crossbar switch
US5245622A (en) 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5251225A (en) 1992-05-08 1993-10-05 Massachusetts Institute Of Technology Quantum-well diode laser
US5449561A (en) * 1992-07-17 1995-09-12 University Of Houston Semimetal-semiconductor heterostructures and multilayers
US5293392A (en) 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5343487A (en) 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US5568504A (en) 1992-12-03 1996-10-22 Siemens Aktiengesellschaft Surface-emitting laser diode
US5416044A (en) 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
JP3207590B2 (en) 1993-03-15 2001-09-10 富士通株式会社 Optical semiconductor device
JP3135185B2 (en) 1993-03-19 2001-02-13 三菱電機株式会社 Semiconductor etching solution, semiconductor etching method, and method for determining GaAs surface
JPH06291406A (en) * 1993-03-31 1994-10-18 Fujitsu Ltd Surface emitting semiconductor laser
US5358880A (en) 1993-04-12 1994-10-25 Motorola, Inc. Method of manufacturing closed cavity LED
US5456205A (en) 1993-06-01 1995-10-10 Midwest Research Institute System for monitoring the growth of crystalline films on stationary substrates
US5412680A (en) * 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5480813A (en) 1994-06-21 1996-01-02 At&T Corp. Accurate in-situ lattice matching by reflection high energy electron diffraction
US5633527A (en) * 1995-02-06 1997-05-27 Sandia Corporation Unitary lens semiconductor device
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
JPH08293489A (en) 1995-04-25 1996-11-05 Sharp Corp Method of dry etching gallium nitride based compound semiconductor
US5624529A (en) * 1995-05-10 1997-04-29 Sandia Corporation Dry etching method for compound semiconductors
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US5594751A (en) * 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
DE69601948T2 (en) * 1995-09-29 1999-08-05 British Telecomm OPTICAL RESONANCE STRUCTURE
US5719891A (en) 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
DE69610610T2 (en) 1995-12-26 2001-05-03 Nippon Telegraph & Telephone Vertical cavity surface emitting laser and method of manufacturing the same
US5726462A (en) * 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
GB2310316A (en) * 1996-02-15 1997-08-20 Sharp Kk Semiconductor laser
SE506651C2 (en) * 1996-02-27 1998-01-26 Ericsson Telefon Ab L M Buried heterostructure
US5838715A (en) * 1996-06-20 1998-11-17 Hewlett-Packard Company High intensity single-mode VCSELs
US5805624A (en) * 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
US5724374A (en) * 1996-08-19 1998-03-03 Picolight Incorporated Aperture comprising an oxidized region and a semiconductor material
WO1998008278A1 (en) * 1996-08-21 1998-02-26 W.L. Gore & Associates, Inc. Vertical cavity surface emitting lasers using patterned wafer fusion
FR2753577B1 (en) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel METHOD FOR MANUFACTURING A SEMICONDUCTOR OPTOELECTRONIC COMPONENT AND COMPONENT AND MATRIX OF COMPONENTS MANUFACTURED ACCORDING TO THIS METHOD
JPH10173294A (en) 1996-10-07 1998-06-26 Canon Inc Multilayered compound semiconductor film mirror containing nitrogen and surface type light emitting device
US6031243A (en) * 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
US6370179B1 (en) * 1996-11-12 2002-04-09 Board Of Regents, The University Of Texas System Low threshold microcavity light emitter
US5877038A (en) 1996-11-27 1999-03-02 The Regents Of The University Of California Method of making a vertical cavity laser
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
US5914976A (en) * 1997-01-08 1999-06-22 W. L. Gore & Associates, Inc. VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
EP0865124B1 (en) 1997-03-12 2003-01-22 BRITISH TELECOMMUNICATIONS public limited company Mirrors for VCSEL
FR2761822B1 (en) * 1997-04-03 1999-05-07 Alsthom Cge Alcatel SEMICONDUCTOR LASER WITH SURFACE EMISSION
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
US6342265B1 (en) * 1997-08-20 2002-01-29 Triumf Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
US6061380A (en) 1997-09-15 2000-05-09 Motorola, Inc. Vertical cavity surface emitting laser with doped active region and method of fabrication
US6021147A (en) 1997-11-04 2000-02-01 Motorola, Inc. Vertical cavity surface emitting laser for high power single mode operation and method of fabrication
US6207973B1 (en) 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures
US6368890B1 (en) * 1999-05-05 2002-04-09 Mitel Semiconductor Ab Top contact VCSEL with monitor
US6238944B1 (en) * 1999-12-21 2001-05-29 Xerox Corporation Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
US6653158B2 (en) * 2000-08-22 2003-11-25 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs and method of fabricating same
US6553051B1 (en) * 2000-10-31 2003-04-22 Agilent Technologies, Inc. System for optically pumping a long wavelength laser using a short wavelength laser
US6459709B1 (en) * 2001-01-31 2002-10-01 Nova Crystals, Inc. Wavelength-tunable semiconductor laser diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
WO1998007218A1 (en) * 1996-08-09 1998-02-19 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720585B1 (en) 2001-01-16 2004-04-13 Optical Communication Products, Inc. Low thermal impedance DBR for optoelectronic devices
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7860143B2 (en) 2004-04-30 2010-12-28 Finisar Corporation Metal-assisted DBRs for thermal management in VCSELs
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
DE102005010933B4 (en) * 2004-06-07 2008-07-03 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Surface emitting vertical cavity laser (VCSEL) with high thermal conductivity
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

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