WO2002023588A3 - Capacitively coupled plasma reactor - Google Patents
Capacitively coupled plasma reactor Download PDFInfo
- Publication number
- WO2002023588A3 WO2002023588A3 PCT/US2001/042111 US0142111W WO0223588A3 WO 2002023588 A3 WO2002023588 A3 WO 2002023588A3 US 0142111 W US0142111 W US 0142111W WO 0223588 A3 WO0223588 A3 WO 0223588A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- region
- plasma region
- generating
- capacitively coupled
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001289211A AU2001289211A1 (en) | 2000-09-12 | 2001-09-12 | Capacitively coupled plasma reactor |
US10/378,691 US20030150562A1 (en) | 2000-09-12 | 2003-03-05 | Apparatus and method to control the uniformity of plasma by reducing radial loss |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23187800P | 2000-09-12 | 2000-09-12 | |
US60/231,878 | 2000-09-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/378,691 Continuation US20030150562A1 (en) | 2000-09-12 | 2003-03-05 | Apparatus and method to control the uniformity of plasma by reducing radial loss |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002023588A2 WO2002023588A2 (en) | 2002-03-21 |
WO2002023588A3 true WO2002023588A3 (en) | 2002-09-12 |
Family
ID=22870971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/042111 WO2002023588A2 (en) | 2000-09-12 | 2001-09-12 | Capacitively coupled plasma reactor |
Country Status (4)
Country | Link |
---|---|
US (1) | US20030150562A1 (en) |
AU (1) | AU2001289211A1 (en) |
TW (1) | TW511398B (en) |
WO (1) | WO2002023588A2 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003005406A1 (en) * | 2001-07-03 | 2003-01-16 | Tokyo Electron Limited | Plasma pump with inter-stage plasma source |
KR100585089B1 (en) * | 2003-05-27 | 2006-05-30 | 삼성전자주식회사 | Plasma processing apparatus for processing the edge of wafer, insulating plate for plasma processing, bottom electrode for plasma processing, method of plasma processing the edge of wafer and method of fabricating semiconductor device using the same |
US7400096B1 (en) | 2004-07-19 | 2008-07-15 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Large area plasma source |
US7305935B1 (en) | 2004-08-25 | 2007-12-11 | The United States Of America As Represented By The Administration Of Nasa | Slotted antenna waveguide plasma source |
US7323116B2 (en) * | 2004-09-27 | 2008-01-29 | Lam Research Corporation | Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage |
US7780814B2 (en) * | 2005-07-08 | 2010-08-24 | Applied Materials, Inc. | Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products |
US20080194091A1 (en) * | 2007-02-13 | 2008-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for fabricating nitrided oxide layer |
US9287096B2 (en) | 2007-09-27 | 2016-03-15 | Lam Research Corporation | Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system |
US20090236214A1 (en) * | 2008-03-20 | 2009-09-24 | Karthik Janakiraman | Tunable ground planes in plasma chambers |
US9887069B2 (en) | 2008-12-19 | 2018-02-06 | Lam Research Corporation | Controlling ion energy distribution in plasma processing systems |
CN101880868B (en) | 2010-06-11 | 2012-03-07 | 深圳市创益科技发展有限公司 | Deposition box for silicon-based film solar cells |
CN101857953B (en) | 2010-06-11 | 2012-04-18 | 深圳市创益科技发展有限公司 | Face feed electrode for thin-film solar cell deposition |
CN101882646B (en) | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | Deposition clamp of film solar cell |
CN101859801B (en) | 2010-06-11 | 2013-02-20 | 深圳市创益科技发展有限公司 | Discharge electrode plate array for thin film solar cell settling |
CN101882647B (en) | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | Movable holder for silicon-based film solar cells |
CN102185217B (en) * | 2011-03-04 | 2013-02-06 | 深圳市创益科技发展有限公司 | Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
US20120258555A1 (en) * | 2011-04-11 | 2012-10-11 | Lam Research Corporation | Multi-Frequency Hollow Cathode and Systems Implementing the Same |
JP6018757B2 (en) | 2012-01-18 | 2016-11-02 | 東京エレクトロン株式会社 | Substrate processing equipment |
US9209032B2 (en) | 2013-03-15 | 2015-12-08 | Tokyo Electron Limited | Electric pressure systems for control of plasma properties and uniformity |
EP2819049B1 (en) * | 2013-06-27 | 2015-11-18 | Nxp B.V. | Device with capacitive security shield |
CN110249416B (en) | 2017-04-07 | 2023-09-12 | 应用材料公司 | Plasma density control at substrate edge |
WO2020014448A1 (en) * | 2018-07-11 | 2020-01-16 | Board Of Trustees Of Michigan State University | Vertically oriented plasma reactor |
US11545343B2 (en) | 2019-04-22 | 2023-01-03 | Board Of Trustees Of Michigan State University | Rotary plasma reactor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444207A (en) * | 1992-03-26 | 1995-08-22 | Kabushiki Kaisha Toshiba | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
EP0969123A1 (en) * | 1997-03-07 | 2000-01-05 | OHMI, Tadahiro | Plasma etching device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5687672A (en) * | 1979-12-15 | 1981-07-16 | Anelva Corp | Dry etching apparatus |
US4691662A (en) * | 1983-02-28 | 1987-09-08 | Michigan State University | Dual plasma microwave apparatus and method for treating a surface |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
US5707486A (en) * | 1990-07-31 | 1998-01-13 | Applied Materials, Inc. | Plasma reactor using UHF/VHF and RF triode source, and process |
US5252178A (en) * | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
US5286297A (en) * | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
US5292370A (en) * | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
KR100302167B1 (en) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | Plasma Treatment Equipment and Plasma Treatment Methods |
US6375860B1 (en) * | 1995-03-10 | 2002-04-23 | General Atomics | Controlled potential plasma source |
US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
US6214162B1 (en) * | 1996-09-27 | 2001-04-10 | Tokyo Electron Limited | Plasma processing apparatus |
JP3598717B2 (en) * | 1997-03-19 | 2004-12-08 | 株式会社日立製作所 | Plasma processing equipment |
US6184489B1 (en) * | 1998-04-13 | 2001-02-06 | Nec Corporation | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
TW516113B (en) * | 1999-04-14 | 2003-01-01 | Hitachi Ltd | Plasma processing device and plasma processing method |
-
2001
- 2001-08-29 TW TW090121311A patent/TW511398B/en not_active IP Right Cessation
- 2001-09-12 WO PCT/US2001/042111 patent/WO2002023588A2/en active Application Filing
- 2001-09-12 AU AU2001289211A patent/AU2001289211A1/en not_active Abandoned
-
2003
- 2003-03-05 US US10/378,691 patent/US20030150562A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444207A (en) * | 1992-03-26 | 1995-08-22 | Kabushiki Kaisha Toshiba | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
EP0969123A1 (en) * | 1997-03-07 | 2000-01-05 | OHMI, Tadahiro | Plasma etching device |
Also Published As
Publication number | Publication date |
---|---|
WO2002023588A2 (en) | 2002-03-21 |
AU2001289211A1 (en) | 2002-03-26 |
US20030150562A1 (en) | 2003-08-14 |
TW511398B (en) | 2002-11-21 |
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