WO2002025454A2 - Memory module having buffer for isolating stacked memory devices - Google Patents

Memory module having buffer for isolating stacked memory devices Download PDF

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Publication number
WO2002025454A2
WO2002025454A2 PCT/US2001/028627 US0128627W WO0225454A2 WO 2002025454 A2 WO2002025454 A2 WO 2002025454A2 US 0128627 W US0128627 W US 0128627W WO 0225454 A2 WO0225454 A2 WO 0225454A2
Authority
WO
WIPO (PCT)
Prior art keywords
memory
buffer
bus
module
coupled
Prior art date
Application number
PCT/US2001/028627
Other languages
English (en)
French (fr)
Other versions
WO2002025454A3 (en
Inventor
John Halbert
Randy M. Bonella
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/666,528 external-priority patent/US6487102B1/en
Application filed by Intel Corporation filed Critical Intel Corporation
Priority to AU2001289067A priority Critical patent/AU2001289067A1/en
Priority to EP01968854A priority patent/EP1320804A2/en
Priority to KR1020037003689A priority patent/KR100554081B1/ko
Publication of WO2002025454A2 publication Critical patent/WO2002025454A2/en
Publication of WO2002025454A3 publication Critical patent/WO2002025454A3/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports

Definitions

  • Fig. 1 is a block diagram of a prior art memory system.
  • the system of Fig. 1 includes three memory modules 10, 12, and 14 that are coupled to a memory controller 16 through a bus 18.
  • Each memory module is fabricated on a circuit board that plugs into a connector 20 on a mother board 22.
  • Each module includes multiple memory devices 24, 26, and 28 that are coupled to the bus 18 to allow the memory controller to access the memory devices .
  • each data line in the bus 18 has a total capacitance that equals the sum of the capacitance of each portion of the signal line running through sections A, B, and C of the bus, plus the capacitance of the portion of the data line in sections 30, 32, and 34 that couple the memory devices to the bus, plus the sum of the input capacitance of all of the memory devices (which are attached to sections 30, 32, and 34 in parallel).
  • FIG. 1 is a block diagram of a prior art memory system.
  • Fig. 2 is a block diagram of an embodiment of a memory module in accordance " with the present invention.
  • Fig. 3 is a side view showing the mechanical arrangement of an embodiment of a memory module in accordance with the present invention.
  • Fig. 4 is a block diagram of an embodiment of a memory system in accordance with the present invention.
  • FIG. 2 is a block diagram of an embodiment of a memory module 100 in accordance with the present invention.
  • Module 100 includes a first memory device 104 which is mounted on a circuit board 108.
  • a second memory device 106 is stacked on top of the first memory device to form a stack 102.
  • a buffer 110 is mounted on the circuit board and electrically coupled to the memory devices 104 and 106 through signal lines 112.
  • a connector 114 is attached to the circuit board for coupling the memory module to a bus that leads to a memory controller on another circuit board, e.g., a computer mother board.
  • the buffer 110 is arranged to capacitively isolate the stack of memory devices from the bus. Therefore, the capacitive loading seen by a memory controller (or other device) driving the bus is reduced. This increases the maximum operating speed of the memory module and reduces power consumption.
  • the buffer 110 sends and receives signals to and from the memory controller through connector 114 over signal lines 120.
  • the buffer 110 is designed to receive signals from the memory controller over a first bus and redrive them back out the connector over signal lines 122 (shown in broken lines) and to a second memory module over a second bus.
  • Fig. 3 is a side view showing the mechanical arrangement of an embodiment of a memory module in accordance with the present invention.
  • the stack 102 can be extended to include additional memory devices (shown in broken lines). Additional stacks can also be added, and they can be buffered by the first buffer 110, or a separate buffer can be used for each stack.
  • Fig. 4 is a block diagram of an embodiment of a memory system in accordance with the present invention.
  • the system of Fig. 4 includes two modules 100A and 100B coupled to a memory controller 116 on a computer mother board 117 through a bus system 118 which includes buses 118 A and 118B.
  • the modules may be coupled through connectors 130A and 130B which plug into connectors 132A and 132B, respectively, on the mother board.
  • Each module a stack of memory devices 102A,102B and a buffer 110A, 110B that isolates the corresponding stack from the bus system.
  • the modules are coupled to the memory controller in a point-to-point arrangement.
  • the memory controller 116 is coupled to module 100A, which is designed to receive signals from the memory controller and redrive them to module 100B.
  • module 100A which is designed to receive signals from the memory controller and redrive them to module 100B.
  • the use of point-to-point wiring further reduces the capacitive loading seen by the memory controller.
  • the modules 110A and HOB and memory controller 116 may be coupled together in a multi-drop arrangement in which both of the modules are essentially coupled in parallel on a single bus.
  • the memory controller 116 is shown in Fig. 4 as part of a central processing unit (CPU) 126, however, it may alternatively be implemented as one chip of a chipset, or in any other suitable form.
  • the memory system shown in Fig. 4 includes two memory modules for purposes of illustration, but may be implemented with only a single memory module or with any number of modules.
  • the buffers need not be mounted on the memory modules, but can also be mounted on the mother board or any other device on which the bus system resides.
  • the stacks of memory devices need not be mounted on modules. Instead, an entire memory system in accordance with the present invention may be fabricated on a single circuit board including the memory controller, bus, stacks of memory devices, and buffers arranged to capacitively isolate the stacks from the bus.
PCT/US2001/028627 2000-09-14 2001-09-14 Memory module having buffer for isolating stacked memory devices WO2002025454A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2001289067A AU2001289067A1 (en) 2000-09-14 2001-09-14 Memory module having buffer for isolating stacked memory devices
EP01968854A EP1320804A2 (en) 2000-09-14 2001-09-14 Memory module having buffer for isolating stacked memory devices
KR1020037003689A KR100554081B1 (ko) 2000-09-14 2001-09-14 스택된 메모리 디바이스를 격리하는 버퍼를 갖는 메모리모듈

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23259600P 2000-09-14 2000-09-14
US60/232,596 2000-09-14
US09/666,528 US6487102B1 (en) 2000-09-18 2000-09-18 Memory module having buffer for isolating stacked memory devices
US09/666,528 2000-09-18

Publications (2)

Publication Number Publication Date
WO2002025454A2 true WO2002025454A2 (en) 2002-03-28
WO2002025454A3 WO2002025454A3 (en) 2002-08-22

Family

ID=26926151

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/028627 WO2002025454A2 (en) 2000-09-14 2001-09-14 Memory module having buffer for isolating stacked memory devices

Country Status (6)

Country Link
EP (1) EP1320804A2 (es)
KR (1) KR100554081B1 (es)
CN (1) CN1484833A (es)
AU (1) AU2001289067A1 (es)
TW (1) TW528948B (es)
WO (1) WO2002025454A2 (es)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7461188B2 (en) * 2000-08-11 2008-12-02 Micron Technology, Inc. Capacitive multidrop bus compensation
US7685364B2 (en) 2005-09-26 2010-03-23 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US7729151B2 (en) 2005-09-26 2010-06-01 Rambus Inc. System including a buffered memory module
US11328764B2 (en) 2005-09-26 2022-05-10 Rambus Inc. Memory system topologies including a memory die stack

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050289316A1 (en) * 2004-06-24 2005-12-29 David Durham Mechanism for sequestering memory for a bus device
KR100763352B1 (ko) * 2005-05-10 2007-10-04 삼성전자주식회사 전용 데이터 및 컨트롤 버스들을 사용하는 메모리 시스템, 모듈들, 컨트롤러들 및 방법들
US7577760B2 (en) 2005-05-10 2009-08-18 Samsung Electronics Co., Ltd. Memory systems, modules, controllers and methods using dedicated data and control busses
US8516185B2 (en) * 2009-07-16 2013-08-20 Netlist, Inc. System and method utilizing distributed byte-wise buffers on a memory module
US8582373B2 (en) 2010-08-31 2013-11-12 Micron Technology, Inc. Buffer die in stacks of memory dies and methods
KR20180004562A (ko) * 2016-07-04 2018-01-12 에스프린팅솔루션 주식회사 전자 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982265A (en) * 1987-06-24 1991-01-01 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US5532954A (en) * 1992-05-19 1996-07-02 Sun Microsystems, Inc. Single in-line memory module
EP0744748A2 (en) * 1995-05-15 1996-11-27 Silicon Graphics, Inc. High memory capacity DIMM with data and state memory
WO1999030240A1 (en) * 1997-12-05 1999-06-17 Intel Corporation Memory system including a memory module having a memory module controller

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982265A (en) * 1987-06-24 1991-01-01 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US5532954A (en) * 1992-05-19 1996-07-02 Sun Microsystems, Inc. Single in-line memory module
EP0744748A2 (en) * 1995-05-15 1996-11-27 Silicon Graphics, Inc. High memory capacity DIMM with data and state memory
WO1999030240A1 (en) * 1997-12-05 1999-06-17 Intel Corporation Memory system including a memory module having a memory module controller

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7913005B2 (en) 2000-08-11 2011-03-22 Round Rock Research, Llc Capacitive multidrop bus compensation
US7461188B2 (en) * 2000-08-11 2008-12-02 Micron Technology, Inc. Capacitive multidrop bus compensation
US8539126B2 (en) 2000-08-11 2013-09-17 Round Rock Research, Llc Capacitive multidrop bus compensation
US9563583B2 (en) 2005-09-26 2017-02-07 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US8108607B2 (en) 2005-09-26 2012-01-31 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US8539152B2 (en) 2005-09-26 2013-09-17 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US7729151B2 (en) 2005-09-26 2010-06-01 Rambus Inc. System including a buffered memory module
US9117035B2 (en) 2005-09-26 2015-08-25 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US7685364B2 (en) 2005-09-26 2010-03-23 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US9865329B2 (en) 2005-09-26 2018-01-09 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US10381067B2 (en) 2005-09-26 2019-08-13 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US10535398B2 (en) 2005-09-26 2020-01-14 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US10672458B1 (en) 2005-09-26 2020-06-02 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US11043258B2 (en) 2005-09-26 2021-06-22 Rambus Inc. Memory system topologies including a memory die stack
US11328764B2 (en) 2005-09-26 2022-05-10 Rambus Inc. Memory system topologies including a memory die stack
US11727982B2 (en) 2005-09-26 2023-08-15 Rambus Inc. Memory system topologies including a memory die stack

Also Published As

Publication number Publication date
KR20030048036A (ko) 2003-06-18
KR100554081B1 (ko) 2006-02-22
CN1484833A (zh) 2004-03-24
EP1320804A2 (en) 2003-06-25
WO2002025454A3 (en) 2002-08-22
AU2001289067A1 (en) 2002-04-02
TW528948B (en) 2003-04-21

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