WO2002025694A3 - System and method for controlling sputtering and deposition effects in a plasma immersion implantation device - Google Patents

System and method for controlling sputtering and deposition effects in a plasma immersion implantation device Download PDF

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Publication number
WO2002025694A3
WO2002025694A3 PCT/GB2001/003797 GB0103797W WO0225694A3 WO 2002025694 A3 WO2002025694 A3 WO 2002025694A3 GB 0103797 W GB0103797 W GB 0103797W WO 0225694 A3 WO0225694 A3 WO 0225694A3
Authority
WO
WIPO (PCT)
Prior art keywords
platen
high voltage
implant
control signal
plasma
Prior art date
Application number
PCT/GB2001/003797
Other languages
French (fr)
Other versions
WO2002025694A2 (en
Inventor
James David Bernstein
Peter Lawrence Kellerman
Original Assignee
Axcelis Tech Inc
Eaton Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc, Eaton Ltd filed Critical Axcelis Tech Inc
Priority to AU2001282327A priority Critical patent/AU2001282327A1/en
Publication of WO2002025694A2 publication Critical patent/WO2002025694A2/en
Publication of WO2002025694A3 publication Critical patent/WO2002025694A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

Abstract

A plasma immersion ion implantation system (10) is provided for controlling the effects of sputtering and deposition during operation thereof. The system includes a chamber (12) for implanting wafers (W) positioned on a platen (14) therein with ions present in a plasma generated therein; a first power supply (33) for supplying a pulsed high voltage signal to the platen (14); a second power supply (46) for generating power necessary for igniting the plasma; a platen bias supply (56) for applying a bias voltage to the platen intermediate successive high voltage implant pulses; and a master implant controller (52). The master implant controller (52) simultaneously outputs a first control signal (72) to the second power supply (46) to ignite the plasma, and a second control signal (74) to a modulator (35) for applying a first of a series of high voltage implant pulses to the platen (14), so as to minimize the time the wafer (W) spends in the plasma prior to the first implantation pulse. The master implant controller further outputs a third control signal (76) for determining periods of time during which the successive high voltage implant pulses are applied to the platen. In addition, alternatively, (i) the master implant controller (52) further outputs a fourth control signal (78) for determining and varying periods of time intermediate times during which the successive high voltage implant pulses are applied to the platen, in response to a dose/current feedback signal, or (ii) the system (10) further includes a charge controller (54B) for outputting a bias control signal (84) for controlling the magnitude of the bias voltage applied to the platen (14) intermediate successive high voltage implant pulses.
PCT/GB2001/003797 2000-09-18 2001-08-23 System and method for controlling sputtering and deposition effects in a plasma immersion implantation device WO2002025694A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001282327A AU2001282327A1 (en) 2000-09-18 2001-08-23 System and method for controlling sputtering and deposition effects in a plasma immersion implantation device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66414600A 2000-09-18 2000-09-18
US09/664,146 2000-09-18

Publications (2)

Publication Number Publication Date
WO2002025694A2 WO2002025694A2 (en) 2002-03-28
WO2002025694A3 true WO2002025694A3 (en) 2002-07-18

Family

ID=24664741

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2001/003797 WO2002025694A2 (en) 2000-09-18 2001-08-23 System and method for controlling sputtering and deposition effects in a plasma immersion implantation device

Country Status (3)

Country Link
AU (1) AU2001282327A1 (en)
TW (1) TW494712B (en)
WO (1) WO2002025694A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US7687787B2 (en) 2005-03-15 2010-03-30 Varian Semiconductor Equipment Associates, Inc. Profile adjustment in plasma ion implanter
TWI404110B (en) 2005-03-15 2013-08-01 Varian Semiconductor Equipment Method for plasma implantation of workpiece and plasma doping apparatus
CN102376519B (en) * 2010-08-17 2013-12-25 中国科学院微电子研究所 Ion implantation dosage detection control method
FR2980911B1 (en) * 2011-10-04 2013-11-22 Ion Beam Services CONTROL MODULE FOR ION IMPLANTER
US8461554B1 (en) * 2011-12-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for charge neutralization during processing of a workpiece
FR3045206B1 (en) * 2015-12-10 2020-01-03 Ion Beam Services ORDERING METHOD FOR AN IMPLANT OPERATING IN PLASMA IMMERSION
CN113727554B (en) * 2021-08-27 2023-07-14 北京北方华创微电子装备有限公司 Power supply assembly, plasma immersion ion implantation equipment and use method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
WO2000032839A1 (en) * 1998-12-01 2000-06-08 Silicon Genesis Corporation Enhanced plasma mode, method, and system for plasma immersion ion implantation
US6237527B1 (en) * 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
WO2000032839A1 (en) * 1998-12-01 2000-06-08 Silicon Genesis Corporation Enhanced plasma mode, method, and system for plasma immersion ion implantation
US6237527B1 (en) * 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate

Also Published As

Publication number Publication date
TW494712B (en) 2002-07-11
WO2002025694A2 (en) 2002-03-28
AU2001282327A1 (en) 2002-04-02

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