WO2002025733A3 - Non-volatile memory cell array and methods of forming - Google Patents

Non-volatile memory cell array and methods of forming Download PDF

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Publication number
WO2002025733A3
WO2002025733A3 PCT/US2001/029405 US0129405W WO0225733A3 WO 2002025733 A3 WO2002025733 A3 WO 2002025733A3 US 0129405 W US0129405 W US 0129405W WO 0225733 A3 WO0225733 A3 WO 0225733A3
Authority
WO
WIPO (PCT)
Prior art keywords
cells
floating gates
rows
memory cell
cell array
Prior art date
Application number
PCT/US2001/029405
Other languages
French (fr)
Other versions
WO2002025733A2 (en
Inventor
Jack H Yuan
Jacob Haskell
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Priority to KR10-2003-7004118A priority Critical patent/KR20030032050A/en
Priority to AU2001291145A priority patent/AU2001291145A1/en
Priority to JP2002529841A priority patent/JP2004510331A/en
Publication of WO2002025733A2 publication Critical patent/WO2002025733A2/en
Publication of WO2002025733A3 publication Critical patent/WO2002025733A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data

Abstract

Rows of memory cells are electrically isolated from one another by trenches formed in the substrate between the rows that are filled with a dielectric, commonly called 'shallow trench isolation' or 'STI.' Discontinuous source and drain regions of the cells are connected together by column oriented bit lines, preferably made of doped polysilicon, that extend in the column direction on top of the substrate. This structure is implemented in a flash memory array of cells having either one floating gate per cell or at least two floating gates per cell. A process of making a dual-floating gate memory cell array includes etching the word lines twice along their lengths, once to form openings through which source and drain implants are made and in which the conductive bit lines are formed, and second to form individual floating gates with a select transistor gate positioned between them that also serves to erase charge from the adjacent floating gates.
PCT/US2001/029405 2000-09-22 2001-09-19 Non-volatile memory cell array and methods of forming WO2002025733A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2003-7004118A KR20030032050A (en) 2000-09-22 2001-09-19 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
AU2001291145A AU2001291145A1 (en) 2000-09-22 2001-09-19 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
JP2002529841A JP2004510331A (en) 2000-09-22 2001-09-19 Non-volatile memory cell array having discontinuous source diffusion and drain diffusion contacting continuous bit line conductors and method of forming

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/667,344 2000-09-22
US09/667,344 US6512263B1 (en) 2000-09-22 2000-09-22 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming

Publications (2)

Publication Number Publication Date
WO2002025733A2 WO2002025733A2 (en) 2002-03-28
WO2002025733A3 true WO2002025733A3 (en) 2002-06-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/029405 WO2002025733A2 (en) 2000-09-22 2001-09-19 Non-volatile memory cell array and methods of forming

Country Status (7)

Country Link
US (5) US6512263B1 (en)
JP (1) JP2004510331A (en)
KR (1) KR20030032050A (en)
CN (1) CN1263151C (en)
AU (1) AU2001291145A1 (en)
TW (1) TW502436B (en)
WO (1) WO2002025733A2 (en)

Cited By (3)

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CN101546605B (en) * 2002-09-30 2012-01-18 张国飙 Improved three-dimensional masking film program read-only memory
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US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions

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