WO2002029848A2 - Wafer area pressure control for plasma confinement - Google Patents

Wafer area pressure control for plasma confinement Download PDF

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Publication number
WO2002029848A2
WO2002029848A2 PCT/US2001/042332 US0142332W WO0229848A2 WO 2002029848 A2 WO2002029848 A2 WO 2002029848A2 US 0142332 W US0142332 W US 0142332W WO 0229848 A2 WO0229848 A2 WO 0229848A2
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WO
WIPO (PCT)
Prior art keywords
adjustable
ring
confinement ring
confinement
adjustable confinement
Prior art date
Application number
PCT/US2001/042332
Other languages
French (fr)
Other versions
WO2002029848A3 (en
Inventor
Han Taejoon
David W. Benzing
Albert R. Ellingboe
Original Assignee
Lam Reasearch Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Reasearch Corporation filed Critical Lam Reasearch Corporation
Priority to KR1020037004805A priority Critical patent/KR100603682B1/en
Priority to EP01977828.1A priority patent/EP1323179B1/en
Priority to JP2002533335A priority patent/JP5100952B2/en
Priority to AU2001296916A priority patent/AU2001296916A1/en
Publication of WO2002029848A2 publication Critical patent/WO2002029848A2/en
Publication of WO2002029848A3 publication Critical patent/WO2002029848A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Definitions

  • the present invention relates to the processing equipment for the fabrication of semiconductor-based devices. More particularly, the present invention relates to improved techniques for confining and controlling the pressure ofthe plasma in plasma processing chambers.
  • layers of material may alternately be deposited onto and etched from a substrate surface (e.g., the semiconductor wafer or glass panel).
  • a substrate surface e.g., the semiconductor wafer or glass panel.
  • the etching ofthe deposited layer(s) may be accomplished by a variety of techniques including plasma-enhanced etching.
  • plasma-enhanced etching the etching ofthe deposited layer(s) on the substrate takes place inside a plasma processing chamber.
  • a plasma is formed from a suitable etchant gas source to etch areas ofthe deposited layer(s) on the substrate that are unprotected by the mask, leaving behind the desired pattern.
  • FIG. 1A depicts an exemplary plasma processing chamber 100, including confinement rings 102 as they are currently implemented.
  • the substrate 106 is positioned upon the lower electrode 104.
  • the lower electrode 104 incorporates a suitable substrate chucking mechanism (e.g., electrostatic, mechanical clamping, or the like) for holding the substrate 106.
  • the reactor top 110 incorporates an upper electrode 112 disposed immediately opposite the lower electrode 104.
  • the upper electrode 112, lower electrode 104, and confinement rings 102 define the confined plasma volume 116. Gas is supplied to the confined plasma volume 116 by etchant gas source 114 and is exhausted from the confined plasma volume 116 through the confinement rings 102 and exhaust port 120 by a vacuum pump.
  • a plasma is formed within this volume by application of RF power to the lower electrode by RF source 108 while grounding upper electrode 112.
  • the plasma may be formed by applying RF power to both lower electrode 104 and upper electrode 112, or by grounding lower electrode 104 and applying RF power to upper electrode 112.
  • the confinement rings 102 serve both to confine the plasma to the volume 106 and to control the pressure ofthe plasma.
  • the confinement ofthe plasma to the volume 116 is a function of many factors including the spacing between the confinement rings 102, the pressure in the volume outside the confinement rings and in the plasma, the type and flow rate ofthe gas, as well as the level and frequency of RF power.
  • the pressure outside the confinement rings 102 should be as low as possible, preferably less than 30 millitorr. Confinement ofthe plasma is more easily accomplished if the spacing between the confinement rings 102 is very small. Typically, a spacing of 0.15 inches or less is required for confinement.
  • the spacing ofthe confinement rings also determines the pressure ofthe plasma, and it is desirable that the spacing can be adjusted to achieve the pressure required for optimal process performance while maintaining plasma.
  • the confinement rings 102 are constrained between the upper and lower electrode assemblies and thus can restrict access to the interelectrode space for loading and unloading of substrates. As shown in FIG 1C, even with the confinement rings 102 lifted to their uppermost position, the access to the interelectrode space is limited to the gap W, which is the difference of the total interelectrode space less the combined thicknesses ofthe confinement rings.
  • a plasma processing device is provided.
  • a vacuum chamber with an exhaust port and vacuum pump in fluid connection with the vacuum chamber and a gas source in fluid connection with the vacuum chamber is provided.
  • a wafer area pressure control device for providing wafer area pressure control range greater than 500% is placed within the vacuum chamber.
  • the present invention provides a method of controlling wafer area pressure.
  • a substrate is placed in a vacuum chamber.
  • a gas source is provided to the vacuum chamber. Gas is also exhausted from the vacuum chamber. At least one ring is moved to provide wafer area pressure control range greater than 500%.
  • FIG. 1 is a schematic view of a prior art plasma processing chamber.
  • FIG. 2 is a graph illustrating the relative pressure achieved with the prior art.
  • FIG. 3 is a schematic view of a plasma processing chamber according to one embodiment ofthe invention.
  • FIG. 4 is a flow chart ofthe operation of the preferred embodiment ofthe invention.
  • FIG. 5 is a schematic view of a section ofthe plasma processing chamber shown in FIG. 3 where the confinement rings are in their uppermost position.
  • FIG. 6 is schematic view ofthe plasma processing chamber shown in FIG. 5, where the confinement rings have been lowered.
  • FIG. 7 is schematic view ofthe plasma processing chamber shown in FIG. 6, where the confinement rings have been lowered further so as to reduce the lowermost gap to its minimum
  • FIG. 8 is schematic view ofthe plasma processing chamber shown in FIG. 7, where the confinement rings have been lowered further so as to reduce the middle gap to its minimum.
  • FIG. 9 is schematic view ofthe plasma processing chamber shown in FIG. 8, where the confinement rings have been lowered further so as to reduce the uppermost gap to its minimum.
  • FIG. 10 is a graph of pressure with respect to the sum ofthe gap sizes.
  • FIG. 11 is a graph of pressure with respect to the sum ofthe gap sizes for various values of minimum gap size
  • FIG. 12 is a schematic view of a plasma processing chamber of another embodiment ofthe invention.
  • FIG. 13 is a schematic view of part of another embodiment ofthe invention.
  • FIG. 3 is a cross-sectional view of a plasma processing chamber 200.
  • the chamber has a top 212 and a bottom 214, and a chamber wall 216 extending from the top 212 to the bottom 214.
  • a lower electrode housing 218 in which is fixtured a chuck 204, which is a workpiece holder on which a substrate 206 is positioned during etching.
  • the chuck 204 may be implemented by any suitable chucking technique, e.g., electrostatic, mechanical clamping, vacuum, or the like.
  • An RF power supply 252 may be electrically connected to the chuck 204.
  • the reactor top 212 supports an upper electrode 224 and may be electrically connected to an RF power supply.
  • a confinement mechanism comprising a first adjustable confinement ring 230, a second adjustable confinement ring 232, a third adjustable confinement ring 234, and a confinement block 236 are disposed within the processing chamber 200.
  • a holder 240 maybe used to support the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236.
  • a controller 242 connected to the holder 240 controls the movement ofthe holder 240 and therefore the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236.
  • the holder 240 is stepped with a confinement ring or block resting on each step.
  • the steps provide a maximum gap spacing between the confinement rings and block, which in the preferred embodiment ofthe invention is between 0.09 to 0.15 inches (2.28 to 3.81 mm).
  • the first adjustable confinement ring 230, the second adjustable confinement ring 232 and the third adjustable confinement ring 234 each are fixtured with spacers 238, which fix the minimum gap between each confinement ring and block.
  • the spacer is of a size to provide a minimum gap between .005 and .060 inches (0.13 to 1.52 mm).
  • An etchant gas source 250 provides gas to the chamber.
  • a pressure sensor 262 measures the pressure in the volume above the substrate 206, the "Wafer Area Pressure", or "WAP”.
  • the chamber 200 has an exhaust port 260.
  • the controller 242 raises the holder 240 to its highest position as shown in FIG. 3 and in detail in FIG 5. Such a position lifts the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236 to a height such that the gap between the underside ofthe first containment ring 230 and the plane ofthe chuck 204 is, at a minimum, of size sufficient to allow the robotic placement ofthe substrate 206 onto the chuck 206. In the preferred embodiment, this gap is on the order of 0.5 inches (12 mm).
  • FIG. 4 is a flow chart ofthe operation ofthe preferred embodiment ofthe invention.
  • the holder raises the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236 to the position shown in FIG. 5 (step 302).
  • a robotic mechanism may be used to place the substrate 206 on the chuck 204 (step 304).
  • the controller 242 lowers the holder 240 to a wafer area pressure control starting point (step 306).
  • the wafer area pressure control starting point may be the position ofthe first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236 that allows minimal pressure drop while maintaining sufficient confinement during processing.
  • the wafer area pressure control starting point may be when the first adjustable confinement ring 230 begins resting on the lower electrode housing 218, as shown in FIG. 6.
  • Etchant gas flow is then initiated (step 308) and the pressure within the wafer area as measured by the pressure sensor 252 is compared to a desired setpoint value (steps 310). If the wafer area pressure needs to be increased (step 312), the controller 242 may further lower the holder 240 (step 316).
  • FIG. 7 illustrates a chamber 200 where the holder 240 is lowered to a point where the second confinement ring 232 rests on the spacers 238 ofthe first confinement ring 230.
  • FIG. 8 illustrates a chamber 200 where the holder 240 is lowered further to a point where the third confinement ring 234 rests on the spacers 238 ofthe second confinement ring 232.
  • FIG. 9 illustrates a chamber 200 where the holder 240 is lowered further still to a point where the confinement block 236 rests on the spacers 238 ofthe third confinement ring 234. This is the lowest wafer area control position, and the holder 240 is not lowered any further.
  • the controller 242 may raise the holder 240 (step 314). Once the holder 240 reaches the highest wafer area pressure control position, as shown in FIG. 6, the holder 240 is not raised any further during the wafer area pressure control stage. Once the wafer area pressure is equal to the desired setpoint value, the plasma is initiated (step 318).
  • the wafer area pressure is again compared against a setpoint (step 320) and the position ofthe confinement rings adjusted by raising or lowering the holder 240 (steps 322, 324, 326) to achieve and maintain the desired pressure until the plasma process is deemed complete (step 330), whereupon the holder 240 is raised to its highest position (step 332), and the robitic mechanism is used to remove the substrate (step 334), so that the process may be repeated.
  • the change in the pressure drop across the confinement rings as the holder 240 is lowered from its highest control position, as shown in FIG 6, to its lowest control position, as shown in FIG 9, may change by 300- 800%.
  • Control ofthe pressure drop is provided in that to increase wafer area pressure the holder is moved downward and to decrease pressure the holder is moved upward.
  • the confinement block 236 is of sufficient thickness such that that the top ofthe confinement block 236 is above the lowest part ofthe upper electrode 224 so as to prevent exiting the wafer area by flowing over the top ofthe confinement block 236.
  • the gap between the confinement block 236 and the upper electrode 224, which is surrounded by the confinement block 236, may be between 0.0125 and 0.0500 inches (0.32 to 1.27 mm). More preferably, the gap is about 0.025 inches (0.63 mm).
  • the thickness ofthe first, second, and third adjustable confinement rings 230, 232, 234 are between 0.045 to 0.180 inches (1.14 to 4.57 mm). More preferably the thickness is about 0.09 inches (2.29 mm).
  • the distance between the upper electrode 224 and the lower electrode 204 may be in the range of 0.4 to 3.0 inches (10 mm to 76.2 mm). More preferable the distance is about 0.6 inches (15 mm).
  • FIG. 10 is a graph of wafer area pressure with respect to the sum ofthe gap distances in inches between the first adjustable confinement ring 230 and second adjustable confinement ring 232; the second adjustable confinement ring 232 and third adjustable confinement ring 234; and the third adjustable confinement ring 234 and confinement block 236.
  • the pressure is measured with a flow of 300 standard cubic centimeters per minute (seem) of Argon being fed into the chamber 200.
  • the square data points 902 represent wafer area pressure, which is pressure within the confinement rings.
  • the diamond data points 904 represent the pressure ofthe chamber 200.
  • Section (I) corresponds to the movement ofthe confinement rings from the position shown in FIG. 6 to the position shown in FIG. 7.
  • Section (II) corresponds to movement ofthe confinement rings from the position shown in FIG. 7 to the position shown in FIG. 8.
  • Section (III) corresponds to the movement ofthe confinement rings from the position shown in FIG. 8 to the position shown in FIG. 9.
  • FIG 11 is a graph ofthe wafer area pressure with respect to the sum ofthe gap distances in inches corresponding to Sections (II) and (III) in FIG 10, but for differing values of minimum gap distances as set by the spacers 236.
  • the minimum gap distance as set by the spacers 236 is .007 inches for the gap between the first (230) and second (232) adjustable confinement rings and .007 inches for the gap between the second (232) and third (234) adjustable confinement rings.
  • the minimum gap distance as set by the spacers 236 is .030 inches for the gap between the first 230 and second 232 adjustable confinement rings and .007 inches for the gap between the second 232 and third 234 adjustable confinement rings.
  • the minimum gap distance as set by the spacers 236 is .038 inches for the gap between the first 230 and second 232 adjustable confinement rings and .030 inches for the gap between the second 232 and third 234 adjustable confinement rings.
  • the minimum gap distance as set by the spacers 236 is .038 inches for the gap between the first 230 and second 232 adjustable confinement rings and .038 inches for the gap between the second 232 and third 234 adjustable confinement rings.
  • the minimum gap distance as set by the spacers 236 is .062 inches for the gap between the first 230 and second 232 adjustable confinement rings and .062 inches for the gap between the second 232 and third 234 adjustable confinement rings. From the graph in FIG 11 it can be seen that the pressure control range and the slope ofthe pressure control can be changed by the use of different spacers 236 to change the minimum gap distance.
  • the holder may be any device that allows one or more controllers to provide an upward and downward movement ofthe confinement rings and confinement blocks, where in a raised position the holder maintains a maximum gap between the confinement rings and the confinement block and in a lowered position the holder allows the confinement rings and confinement block to form minimum gaps.
  • the holder allows one gap at a time to decrease until the gap is minimized. Once a gap is minimized, another gap is decreased.
  • the holder 240 in FIG. 5 is a type of hanger, since the holder 240 is below the controller 242. In another embodiment, the holder 240 could be configured so as to be above the controller 242, and the holder 240 is now a type of platform.
  • the number and spacing ofthe confinement rings and confinement block are such that at the highest position, at least part ofthe lowest confinement ring is above the lowest part ofthe upper electrode and, for a wafer area pressure control initial position, the lowest confinement ring rests on a surface coplanar with the lower electrode and the confinement rings and a portion ofthe confinement block are below the upper electrode. This embodiment helps to avoid stagnation points, which may cause the accumulation of deposited polymer films.
  • the holder may comprise a plurality of hangers with each hanger suspending a different confinement ring.
  • FIG. 12 illustrates parts of a first adjustable confinement ring 1204, a second adjustable confinement ring 1208, a third adjustable confinement ring 1212, and a confinement block 1216.
  • a first hanger 1220 is suspended from a controller 1224.
  • the confinement block 1216 hangs from the first hanger 1224.
  • a second hanger 1228, a third hanger 1232, and a fourth hanger 1236 hang from the confinement block 1216.
  • the second hanger 1228 supports the third adjustable confinement ring 1212.
  • the third hanger 1232 supports the second adjustable confinement ring 1208.
  • the fourth hanger 1236 supports the first adjustable confinement ring 1204.
  • the second, third, and fourth hangers allow the first, second, and third adjustable confinement rings to stop moving when they reach their lowest point, as described in the previous embodiment.
  • FIG. 13 illustrates parts of a first adjustable confinement ring 1330, a second adjustable confinement ring 1332, a third adjustable confinement ring 1334, and a confinement block 1336.
  • a holder 1340 may be used to support the first adjustable confinement ring 1330, second adjustable confinement ring 1332, third adjustable confinement ring 1334, and confinement block 1336.
  • a controller 1342 connected to the holder 1340 controls the movement ofthe holder 1340 and therefore the first adjustable confinement ring 1330, second adjustable confinement ring 1332, third adjustable confinement ring 1334, and confinement block 1336.
  • the holder 1340 is stepped with a confinement ring or block resting on each step.
  • the steps define the maximum gap spacing between the confinement rings and block.
  • the first adjustable confinement ring 1330, second adjustable confinement ring 1332, and third adjustable confinement ring are fixtured with spacers 1338, which define the minimum gap spacing between adjacent confinement rings.
  • the mating surfaces of the confinement rings 1330, 1332, 1334 and the confinement block 1336 are not flat, but instead incorporate a "profile" such that, at the maximum gap spacing, the gaps are "optically dense", that is they do not provide a direct line of sight, which may serve to improve confinement ofthe plasma by minimizing the streaming of charged particles from the plasma, through the gaps into the volume outside the confinement rings.
  • FIG 13 illustrates one embodiment of this "profile", consisting of a vertical offset 1344 in each mating surface of a magmtude greater than one half the maximum gap spacing.
  • the offset in each mating surface is radially staggered to allow each mating surface to be brought into close proximity with the next.

Abstract

A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100 %. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Description

WAFER AREA PRESSURE CONTROL FOR PLASMA CONFINEMENT
BACKGROUND OF THE INVENTION
The present invention relates to the processing equipment for the fabrication of semiconductor-based devices. More particularly, the present invention relates to improved techniques for confining and controlling the pressure ofthe plasma in plasma processing chambers.
In the fabrication of semiconductor-based devices (e.g., integrated circuits or flat panel displays) layers of material may alternately be deposited onto and etched from a substrate surface (e.g., the semiconductor wafer or glass panel). As is well known in the art, the etching ofthe deposited layer(s) may be accomplished by a variety of techniques including plasma-enhanced etching. In plasma-enhanced etching, the etching ofthe deposited layer(s) on the substrate takes place inside a plasma processing chamber. During etching, a plasma is formed from a suitable etchant gas source to etch areas ofthe deposited layer(s) on the substrate that are unprotected by the mask, leaving behind the desired pattern.
Among different types of plasma etching systems, those utilizing methods to confine the plasma to a volume immediately above the substrate have proven highly suitable for efficient production and/or for forming the ever-shrinking features on the substrate. An example of such a system may be found in commonly assigned U.S. Patent No. 5,534,751 , which is incorporated by reference herein. Although plasma confinement results in a significant improvement in the performance of plasma processing systems, current implementations can be improved. In particular, it is realized that improvements can be made in the control ofthe pressure ofthe confined plasma and the accessibility ofthe plasma processing volume for substrate transport.
To facilitate discussion, FIG. 1A depicts an exemplary plasma processing chamber 100, including confinement rings 102 as they are currently implemented. Within plasma processing chamber 100, the substrate 106 is positioned upon the lower electrode 104. The lower electrode 104 incorporates a suitable substrate chucking mechanism (e.g., electrostatic, mechanical clamping, or the like) for holding the substrate 106. The reactor top 110 incorporates an upper electrode 112 disposed immediately opposite the lower electrode 104. The upper electrode 112, lower electrode 104, and confinement rings 102 define the confined plasma volume 116. Gas is supplied to the confined plasma volume 116 by etchant gas source 114 and is exhausted from the confined plasma volume 116 through the confinement rings 102 and exhaust port 120 by a vacuum pump. With gas flowing and an appropriate pressure established within the confined plasma volume, a plasma is formed within this volume by application of RF power to the lower electrode by RF source 108 while grounding upper electrode 112. Alternately, as is well known in the art, the plasma may be formed by applying RF power to both lower electrode 104 and upper electrode 112, or by grounding lower electrode 104 and applying RF power to upper electrode 112.
The confinement rings 102 serve both to confine the plasma to the volume 106 and to control the pressure ofthe plasma. The confinement ofthe plasma to the volume 116 is a function of many factors including the spacing between the confinement rings 102, the pressure in the volume outside the confinement rings and in the plasma, the type and flow rate ofthe gas, as well as the level and frequency of RF power. For effective plasma confinement, the pressure outside the confinement rings 102 should be as low as possible, preferably less than 30 millitorr. Confinement ofthe plasma is more easily accomplished if the spacing between the confinement rings 102 is very small. Typically, a spacing of 0.15 inches or less is required for confinement. However, the spacing ofthe confinement rings also determines the pressure ofthe plasma, and it is desirable that the spacing can be adjusted to achieve the pressure required for optimal process performance while maintaining plasma.
Commonly assigned U.S. Patent No. 6,019,060 entitled "Cam-Based Arrangement for Positioning Confinement Rings In A Plasma Processing Chamber" by Eric H. Lenz, issued February 1, 2000, incorporated by reference, taught that the pressure drop across the confinement rings is approximately proportional to the expression 1/(X2 + Y2 + Z2) where X, Y and Z are the distances between confinement rings as shown in FIG. IB. Lenz provided a single movable ring and a stationary ring (X = constant, Y+Z = constant in FIG. IB). By adjusting the distances Y and Z by moving the single movable confinement ring, as taught by Lenz, a plasma pressure control range can be obtained. FIG. 2 illustrates the relative pressure predicted by the expression above obtained by moving a single ring for of various fixed gaps, X. The expression predicts a. control range of 67-100% can be obtained, as illustrated in Figure 2, while experiments found the achievable range to be approximately one half those values. In many cases, a wider plasma pressure range is required to achieve optimal process results on various types of films and devices within the same processing system.
In addition, in the method taught by Lenz, the confinement rings 102 are constrained between the upper and lower electrode assemblies and thus can restrict access to the interelectrode space for loading and unloading of substrates. As shown in FIG 1C, even with the confinement rings 102 lifted to their uppermost position, the access to the interelectrode space is limited to the gap W, which is the difference of the total interelectrode space less the combined thicknesses ofthe confinement rings.
It is desirable to provide an increased range of pressure control while maintaining plasma confinement. It is also desirable to provide confinement rings that greater facilitate placement and removal ofthe substrate from the plasma processing system.
SUMMARY OF THE INVENTION
To achieve the foregoing and other objects and in accordance with the purpose ofthe present invention, a plasma processing device is provided. A vacuum chamber with an exhaust port and vacuum pump in fluid connection with the vacuum chamber and a gas source in fluid connection with the vacuum chamber is provided. Within the vacuum chamber a wafer area pressure control device for providing wafer area pressure control range greater than 500% is placed.
In addition, the present invention provides a method of controlling wafer area pressure. Generally, a substrate is placed in a vacuum chamber. A gas source is provided to the vacuum chamber. Gas is also exhausted from the vacuum chamber. At least one ring is moved to provide wafer area pressure control range greater than 500%.
These and other features ofthe present invention will be described in more detail below in the detailed description ofthe invention and in conjunction with the following figures.
BRIEF DESCRIPTION OF THE DRAWINGS
The present invention is illustrated by way of example, and not by way of limitation, in the figures ofthe accompanying drawings and in which like reference numerals refer to similar elements and in which:
FIG. 1 is a schematic view of a prior art plasma processing chamber.
FIG. 2 is a graph illustrating the relative pressure achieved with the prior art.
FIG. 3 is a schematic view of a plasma processing chamber according to one embodiment ofthe invention.
FIG. 4 is a flow chart ofthe operation ofthe preferred embodiment ofthe invention.
FIG. 5 is a schematic view of a section ofthe plasma processing chamber shown in FIG. 3 where the confinement rings are in their uppermost position.
FIG. 6 is schematic view ofthe plasma processing chamber shown in FIG. 5, where the confinement rings have been lowered.
FIG. 7 is schematic view ofthe plasma processing chamber shown in FIG. 6, where the confinement rings have been lowered further so as to reduce the lowermost gap to its minimum
FIG. 8 is schematic view ofthe plasma processing chamber shown in FIG. 7, where the confinement rings have been lowered further so as to reduce the middle gap to its minimum. FIG. 9 is schematic view ofthe plasma processing chamber shown in FIG. 8, where the confinement rings have been lowered further so as to reduce the uppermost gap to its minimum.
FIG. 10 is a graph of pressure with respect to the sum ofthe gap sizes.
FIG. 11 is a graph of pressure with respect to the sum ofthe gap sizes for various values of minimum gap size
FIG. 12 is a schematic view of a plasma processing chamber of another embodiment ofthe invention.
FIG. 13 is a schematic view of part of another embodiment ofthe invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention will now be described in detail with reference to a few preferred embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding ofthe present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and/or structures have not been described in detail in order to not unnecessarily obscure the present invention.
To facilitate discussion, FIG. 3 is a cross-sectional view of a plasma processing chamber 200. The chamber has a top 212 and a bottom 214, and a chamber wall 216 extending from the top 212 to the bottom 214. Cantilevered from one side ofthe chamber is a lower electrode housing 218 in which is fixtured a chuck 204, which is a workpiece holder on which a substrate 206 is positioned during etching. The chuck 204 may be implemented by any suitable chucking technique, e.g., electrostatic, mechanical clamping, vacuum, or the like. An RF power supply 252 may be electrically connected to the chuck 204. The reactor top 212 supports an upper electrode 224 and may be electrically connected to an RF power supply. A confinement mechanism comprising a first adjustable confinement ring 230, a second adjustable confinement ring 232, a third adjustable confinement ring 234, and a confinement block 236 are disposed within the processing chamber 200. A holder 240 maybe used to support the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236. A controller 242 connected to the holder 240 controls the movement ofthe holder 240 and therefore the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236. In the preferred embodiment ofthe invention, the holder 240 is stepped with a confinement ring or block resting on each step. The steps provide a maximum gap spacing between the confinement rings and block, which in the preferred embodiment ofthe invention is between 0.09 to 0.15 inches (2.28 to 3.81 mm). The first adjustable confinement ring 230, the second adjustable confinement ring 232 and the third adjustable confinement ring 234 each are fixtured with spacers 238, which fix the minimum gap between each confinement ring and block. In this embodiment the spacer is of a size to provide a minimum gap between .005 and .060 inches (0.13 to 1.52 mm). An etchant gas source 250 provides gas to the chamber. A pressure sensor 262 measures the pressure in the volume above the substrate 206, the "Wafer Area Pressure", or "WAP". The chamber 200 has an exhaust port 260.
In operation of this embodiment, the controller 242 raises the holder 240 to its highest position as shown in FIG. 3 and in detail in FIG 5. Such a position lifts the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236 to a height such that the gap between the underside ofthe first containment ring 230 and the plane ofthe chuck 204 is, at a minimum, of size sufficient to allow the robotic placement ofthe substrate 206 onto the chuck 206. In the preferred embodiment, this gap is on the order of 0.5 inches (12 mm).
FIG. 4 is a flow chart ofthe operation ofthe preferred embodiment ofthe invention. In operation, the holder raises the first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236 to the position shown in FIG. 5 (step 302). A robotic mechanism may be used to place the substrate 206 on the chuck 204 (step 304). The controller 242 lowers the holder 240 to a wafer area pressure control starting point (step 306). The wafer area pressure control starting point may be the position ofthe first adjustable confinement ring 230, second adjustable confinement ring 232, third adjustable confinement ring 234, and confinement block 236 that allows minimal pressure drop while maintaining sufficient confinement during processing. In this embodiment the wafer area pressure control starting point may be when the first adjustable confinement ring 230 begins resting on the lower electrode housing 218, as shown in FIG. 6. Etchant gas flow is then initiated (step 308) and the pressure within the wafer area as measured by the pressure sensor 252 is compared to a desired setpoint value (steps 310). If the wafer area pressure needs to be increased (step 312), the controller 242 may further lower the holder 240 (step 316). FIG. 7 illustrates a chamber 200 where the holder 240 is lowered to a point where the second confinement ring 232 rests on the spacers 238 ofthe first confinement ring 230. FIG. 8 illustrates a chamber 200 where the holder 240 is lowered further to a point where the third confinement ring 234 rests on the spacers 238 ofthe second confinement ring 232. FIG. 9 illustrates a chamber 200 where the holder 240 is lowered further still to a point where the confinement block 236 rests on the spacers 238 ofthe third confinement ring 234. This is the lowest wafer area control position, and the holder 240 is not lowered any further.
If the wafer area pressure needs to be decreased, the controller 242 may raise the holder 240 (step 314). Once the holder 240 reaches the highest wafer area pressure control position, as shown in FIG. 6, the holder 240 is not raised any further during the wafer area pressure control stage. Once the wafer area pressure is equal to the desired setpoint value, the plasma is initiated (step 318). The wafer area pressure is again compared against a setpoint (step 320) and the position ofthe confinement rings adjusted by raising or lowering the holder 240 (steps 322, 324, 326) to achieve and maintain the desired pressure until the plasma process is deemed complete (step 330), whereupon the holder 240 is raised to its highest position (step 332), and the robitic mechanism is used to remove the substrate (step 334), so that the process may be repeated.
In the preferred embodiment the change in the pressure drop across the confinement rings as the holder 240 is lowered from its highest control position, as shown in FIG 6, to its lowest control position, as shown in FIG 9, may change by 300- 800%. Control ofthe pressure drop is provided in that to increase wafer area pressure the holder is moved downward and to decrease pressure the holder is moved upward. As shown in FIG. 9, the confinement block 236 is of sufficient thickness such that that the top ofthe confinement block 236 is above the lowest part ofthe upper electrode 224 so as to prevent exiting the wafer area by flowing over the top ofthe confinement block 236.
In an example ofthe dimensions that may be used in this embodiment, the gap between the confinement block 236 and the upper electrode 224, which is surrounded by the confinement block 236, may be between 0.0125 and 0.0500 inches (0.32 to 1.27 mm). More preferably, the gap is about 0.025 inches (0.63 mm). The thickness ofthe first, second, and third adjustable confinement rings 230, 232, 234 are between 0.045 to 0.180 inches (1.14 to 4.57 mm). More preferably the thickness is about 0.09 inches (2.29 mm). The distance between the upper electrode 224 and the lower electrode 204 may be in the range of 0.4 to 3.0 inches (10 mm to 76.2 mm). More preferable the distance is about 0.6 inches (15 mm).
FIG. 10 is a graph of wafer area pressure with respect to the sum ofthe gap distances in inches between the first adjustable confinement ring 230 and second adjustable confinement ring 232; the second adjustable confinement ring 232 and third adjustable confinement ring 234; and the third adjustable confinement ring 234 and confinement block 236. In this example, the pressure is measured with a flow of 300 standard cubic centimeters per minute (seem) of Argon being fed into the chamber 200. The square data points 902 represent wafer area pressure, which is pressure within the confinement rings. The diamond data points 904 represent the pressure ofthe chamber 200. Section (I) corresponds to the movement ofthe confinement rings from the position shown in FIG. 6 to the position shown in FIG. 7. Section (II) corresponds to movement ofthe confinement rings from the position shown in FIG. 7 to the position shown in FIG. 8. Section (III) corresponds to the movement ofthe confinement rings from the position shown in FIG. 8 to the position shown in FIG. 9.
FIG 11 is a graph ofthe wafer area pressure with respect to the sum ofthe gap distances in inches corresponding to Sections (II) and (III) in FIG 10, but for differing values of minimum gap distances as set by the spacers 236. In Curve (a), the minimum gap distance as set by the spacers 236 is .007 inches for the gap between the first (230) and second (232) adjustable confinement rings and .007 inches for the gap between the second (232) and third (234) adjustable confinement rings. In Curve (b) the minimum gap distance as set by the spacers 236 is .030 inches for the gap between the first 230 and second 232 adjustable confinement rings and .007 inches for the gap between the second 232 and third 234 adjustable confinement rings. In Curve (c) the minimum gap distance as set by the spacers 236 is .038 inches for the gap between the first 230 and second 232 adjustable confinement rings and .030 inches for the gap between the second 232 and third 234 adjustable confinement rings. In Curve (d) the minimum gap distance as set by the spacers 236 is .038 inches for the gap between the first 230 and second 232 adjustable confinement rings and .038 inches for the gap between the second 232 and third 234 adjustable confinement rings. In Curve (e) the minimum gap distance as set by the spacers 236 is .062 inches for the gap between the first 230 and second 232 adjustable confinement rings and .062 inches for the gap between the second 232 and third 234 adjustable confinement rings. From the graph in FIG 11 it can be seen that the pressure control range and the slope ofthe pressure control can be changed by the use of different spacers 236 to change the minimum gap distance.
The holder may be any device that allows one or more controllers to provide an upward and downward movement ofthe confinement rings and confinement blocks, where in a raised position the holder maintains a maximum gap between the confinement rings and the confinement block and in a lowered position the holder allows the confinement rings and confinement block to form minimum gaps. Preferably, the holder allows one gap at a time to decrease until the gap is minimized. Once a gap is minimized, another gap is decreased. The holder 240 in FIG. 5 is a type of hanger, since the holder 240 is below the controller 242. In another embodiment, the holder 240 could be configured so as to be above the controller 242, and the holder 240 is now a type of platform.
Although three confinement rings and a confinement block are shown in the preferred embodiment, other numbers of confinement rings and blocks may be used. In the preferred embodiment, the number and spacing ofthe confinement rings and confinement block are such that at the highest position, at least part ofthe lowest confinement ring is above the lowest part ofthe upper electrode and, for a wafer area pressure control initial position, the lowest confinement ring rests on a surface coplanar with the lower electrode and the confinement rings and a portion ofthe confinement block are below the upper electrode. This embodiment helps to avoid stagnation points, which may cause the accumulation of deposited polymer films.
In another embodiment, the holder may comprise a plurality of hangers with each hanger suspending a different confinement ring. FIG. 12 illustrates parts of a first adjustable confinement ring 1204, a second adjustable confinement ring 1208, a third adjustable confinement ring 1212, and a confinement block 1216. A first hanger 1220 is suspended from a controller 1224. The confinement block 1216 hangs from the first hanger 1224. A second hanger 1228, a third hanger 1232, and a fourth hanger 1236 hang from the confinement block 1216. The second hanger 1228 supports the third adjustable confinement ring 1212. The third hanger 1232 supports the second adjustable confinement ring 1208. The fourth hanger 1236 supports the first adjustable confinement ring 1204. The second, third, and fourth hangers allow the first, second, and third adjustable confinement rings to stop moving when they reach their lowest point, as described in the previous embodiment.
In yet another embodiment, the profile ofthe confinement ring may be complex. FIG. 13 illustrates parts of a first adjustable confinement ring 1330, a second adjustable confinement ring 1332, a third adjustable confinement ring 1334, and a confinement block 1336. A holder 1340 may be used to support the first adjustable confinement ring 1330, second adjustable confinement ring 1332, third adjustable confinement ring 1334, and confinement block 1336. A controller 1342 connected to the holder 1340 controls the movement ofthe holder 1340 and therefore the first adjustable confinement ring 1330, second adjustable confinement ring 1332, third adjustable confinement ring 1334, and confinement block 1336. The holder 1340 is stepped with a confinement ring or block resting on each step. The steps define the maximum gap spacing between the confinement rings and block. The first adjustable confinement ring 1330, second adjustable confinement ring 1332, and third adjustable confinement ring are fixtured with spacers 1338, which define the minimum gap spacing between adjacent confinement rings. The mating surfaces of the confinement rings 1330, 1332, 1334 and the confinement block 1336 are not flat, but instead incorporate a "profile" such that, at the maximum gap spacing, the gaps are "optically dense", that is they do not provide a direct line of sight, which may serve to improve confinement ofthe plasma by minimizing the streaming of charged particles from the plasma, through the gaps into the volume outside the confinement rings. FIG 13 illustrates one embodiment of this "profile", consisting of a vertical offset 1344 in each mating surface of a magmtude greater than one half the maximum gap spacing. The offset in each mating surface is radially staggered to allow each mating surface to be brought into close proximity with the next.
While this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and substitute equivalents, which fall within the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and apparatuses ofthe present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and substitute equivalents as fall within the true spirit and scope ofthe present invention.

Claims

CLAIMSWhat is claimed is:
1. An apparatus for controlling pressure, comprising:
a vacuum chamber;
an exhaust port in fluid connection with the vacuum chamber;
a gas source in fluid connection with the vacuum chamber; and
a wafer area pressure control device, wherein the wafer area pressure control device comprises:
a first adjustable confinement ring within the vacuum chamber;
a second adjustable confinement ring within the vacuum chamber;
an adjustable confinement block within the vacuum chamber; and
a controller for raising and lowering the first confinement ring, the second confinement ring, and the confinement block.
2. The apparatus, as recited in claim 1, wherein the wafer area pressure control device, further comprises at least one holder connected between the controller and the first adjustable confinement ring, the second adjustable confinement ring, and the adjustable confinement block.
3. The apparatus, as recited in claim 2, wherein the at least one holder moves the first adjustable confinement ring, the second adjustable confinement ring, and the adjustable confinement block.
4. The apparatus, as recited in any of claims 2 and 3, further comprising an upper electrode, and wherein the at least one holder is able to move at least part ofthe first adjustable confinement ring, the second adjustable confinement ring and the adjustable confinement block to a position above a lower surface ofthe upper electrode.
5. The apparatus, as recited in any of claims 2-4, wherein the at least one holder is able to move the first adjustable confinement ring to rest on a surface on a plane with or below that of the substrate.
6. The apparatus, as recited in any of claims 1 -5, further comprising a spacer between the first adjustable confinement ring and the second adjustable confinement ring.
7. The apparatus, as recited in any of claims 2-6, wherein the at least one holder is able to move the second adjustable confinement ring from a position spaced apart from the first confinement ring to form a maximum spacing to a position wherein the second adjustable confinement ring rests on the first adjustable confinement ring, separated by the spacer.
8. The apparatus, as recited in any of claims 1-7, wherein the wafer area pressure control device further comprises a third adjustable confinement ring located between the second adjustable confinement ring and the adjustable confinement block and connected to the holder.
9. An apparatus for controlling pressure, comprising:
a vacuum chamber;
an exhaust port in fluid connection with the vacuum chamber;
a gas source in fluid connection with the vacuum chamber; and
a wafer area pressure control device, wherein the wafer area pressure control device comprises: at least one ring; a plurality of gaps adjacent to the at least one ring; and a controller for moving the at least one ring to decrease the area ofthe plurality of gaps.
10. A method of controlling wafer area pressure, comprising: placing a substrate in a vacuum chamber; providing a gas source to the vacuum chamber; exhausting gas from the vacuum chamber; and moving at least one ring to provide a wafer area pressure control range greater than 100%.
11. The method, as recited in claim 10, wherein the moving at least one ring comprises: lowering a first adjustable confinement ring, a second adjustable confinement ring, and a confinement block to a wafer area pressure control starting point where the first adjustable confinement ring rests on a bottom ofthe vacuum chamber and wherein the second adjustable confinement ring is spaced apart from the first adjustable confinement ring a maximum distance separating the first adjustable confinement ring and the second adjustable confinement ring, and wherein the confinement block is spaced apart from the second adjustable confinement ring a maximum distance separating the second adjustable confinement ring and the confinement block; and lowering the second adjustable confinement ring and the confinement block until the second adjustable confinement ring rests on the first adjustable confinement ring and is separated from the first adjustable confinement ring by a spacer, and wherein the confinement block is spaced apart from the second adjustable confinement ring by the maximum distance separating the second adjustable confinement ring and the confinement block.
12. The method, as recited in claim 11, wherein the moving at least one ring, further comprises, lowering the confinement block so that the confinement block rests on the second adjustable confinement ring.
13. The method, as recited in claim 11, wherein the lowering the first adjustable confinement ring, the second adjustable confinement ring, and the confinement block further lowers a third adjustable confinement ring between the second adjustable confinement ring and the confinement block, wherein the third adjustable confinement ring is spaced apart from the second adjustable confinement ring by a maximum distance separating the third adjustable confinement ring from the second adjustable confinement ring and the confinement block is spaced apart from the third adjustable confinement ring by a maximum distance separating the third adjustable confinement ring from the confinement block, and wherein the lowering the second adjustable confinement ring, and the confinement block further lowers the third adjustable confinement ring, wherein the third adjustable confinement ring is spaced apart from the confinement block by the maximum distance separating the third adjustable confinement ring from the confinement block and the third adjustable confinement ring is spaced apart from the second adjustable confinement ring by the maximum distance separating the third adjustable confinement ring from the second adjustable confinement ring.
14. The method, as recited in claim 11, wherein the moving at least one ring, further comprises lowering the third adjustable confinement ring and the confinement block until the third adjustable confinement ring rests on the second adjustable confinement ring, separated from the second adjustable confinement ring by a spacer and wherein the confinement block is separated from the third adjustable confinement ring by the maximum distance separating the third adjustable confinement ring from the confinement block.
15. The method, as recited in claim 14, wherein the moving at least one ring further comprises lowering the confinement block until the confinement block rests on the third confinement ring.
PCT/US2001/042332 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement WO2002029848A2 (en)

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JP2002533335A JP5100952B2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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WO2006135924A1 (en) * 2005-06-13 2006-12-21 Lam Research Corporation Improvement of etch rate uniformity using the independent movement of electrode pieces
US8790489B2 (en) 2010-07-05 2014-07-29 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6926803B2 (en) * 2002-04-17 2005-08-09 Lam Research Corporation Confinement ring support assembly
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber
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US7296534B2 (en) * 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
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US7863702B2 (en) * 2004-06-10 2011-01-04 Samsung Electronics Co., Ltd. Image sensor package and method of manufacturing the same
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US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US7364623B2 (en) * 2005-01-27 2008-04-29 Lam Research Corporation Confinement ring drive
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
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US7632377B2 (en) 2006-01-24 2009-12-15 United Microelectronics Corp. Dry etching apparatus capable of monitoring motion of WAP ring thereof
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US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
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US8043430B2 (en) 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
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US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
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US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
KR101559913B1 (en) * 2009-06-25 2015-10-27 삼성전자주식회사 Plasma dry etching apparatus
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
SG10201405042QA (en) * 2009-08-31 2014-10-30 Lam Res Corp A multi-peripheral ring arrangement for performing plasma confinement
US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9076826B2 (en) * 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
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US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
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US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
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US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
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US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
WO2001050498A1 (en) * 1999-12-30 2001-07-12 Lam Research Corporation Linear drive system for use in a plasma processing system

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5246532A (en) 1990-10-26 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus
JP2638443B2 (en) 1993-08-31 1997-08-06 日本電気株式会社 Dry etching method and dry etching apparatus
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JPH1012578A (en) * 1996-06-26 1998-01-16 Mitsubishi Electric Corp Method and apparatus for mounting wafer on support base
JP3468446B2 (en) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 Plasma processing equipment
US6008130A (en) * 1997-08-14 1999-12-28 Vlsi Technology, Inc. Polymer adhesive plasma confinement ring
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
JP2000058512A (en) 1998-08-03 2000-02-25 Matsushita Electric Ind Co Ltd Device and method for plasma treatment
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6354241B1 (en) * 1999-07-15 2002-03-12 Applied Materials, Inc. Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
WO2001050498A1 (en) * 1999-12-30 2001-07-12 Lam Research Corporation Linear drive system for use in a plasma processing system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1678480A2 (en) * 2003-10-28 2006-07-12 Lam Research Corporation Method and apparatus for etch endpoint detection
EP1678480A4 (en) * 2003-10-28 2012-10-17 Lam Res Corp Method and apparatus for etch endpoint detection
WO2006135924A1 (en) * 2005-06-13 2006-12-21 Lam Research Corporation Improvement of etch rate uniformity using the independent movement of electrode pieces
US8790489B2 (en) 2010-07-05 2014-07-29 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

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US7470627B2 (en) 2008-12-30
CN1322539C (en) 2007-06-20
JP2012178614A (en) 2012-09-13
WO2002029848A3 (en) 2002-10-31
RU2270492C2 (en) 2006-02-20
US6492774B1 (en) 2002-12-10
JP5100952B2 (en) 2012-12-19
KR20030051698A (en) 2003-06-25
TW587272B (en) 2004-05-11
US20050051268A1 (en) 2005-03-10
US6823815B2 (en) 2004-11-30
CN1479936A (en) 2004-03-03
EP1323179B1 (en) 2013-11-06
JP2004511096A (en) 2004-04-08
AU2001296916A1 (en) 2002-04-15
US20020190657A1 (en) 2002-12-19
EP1323179A2 (en) 2003-07-02
KR100603682B1 (en) 2006-07-20

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