WO2002029848A3 - Wafer area pressure control for plasma confinement - Google Patents

Wafer area pressure control for plasma confinement Download PDF

Info

Publication number
WO2002029848A3
WO2002029848A3 PCT/US2001/042332 US0142332W WO0229848A3 WO 2002029848 A3 WO2002029848 A3 WO 2002029848A3 US 0142332 W US0142332 W US 0142332W WO 0229848 A3 WO0229848 A3 WO 0229848A3
Authority
WO
WIPO (PCT)
Prior art keywords
pressure control
wafer area
area pressure
wafer
confinement
Prior art date
Application number
PCT/US2001/042332
Other languages
French (fr)
Other versions
WO2002029848A2 (en
Inventor
Han Taejoon
David W Benzing
Albert R Ellingboe
Original Assignee
Lam Reasearch Corp
Han Taejoon
David W Benzing
Albert R Ellingboe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Reasearch Corp, Han Taejoon, David W Benzing, Albert R Ellingboe filed Critical Lam Reasearch Corp
Priority to AU2001296916A priority Critical patent/AU2001296916A1/en
Priority to KR1020037004805A priority patent/KR100603682B1/en
Priority to EP01977828.1A priority patent/EP1323179B1/en
Priority to JP2002533335A priority patent/JP5100952B2/en
Publication of WO2002029848A2 publication Critical patent/WO2002029848A2/en
Publication of WO2002029848A3 publication Critical patent/WO2002029848A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)

Abstract

A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100 %. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
PCT/US2001/042332 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement WO2002029848A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2001296916A AU2001296916A1 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement
KR1020037004805A KR100603682B1 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement
EP01977828.1A EP1323179B1 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement
JP2002533335A JP5100952B2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/684,695 2000-10-04
US09/684,695 US6492774B1 (en) 2000-10-04 2000-10-04 Wafer area pressure control for plasma confinement

Publications (2)

Publication Number Publication Date
WO2002029848A2 WO2002029848A2 (en) 2002-04-11
WO2002029848A3 true WO2002029848A3 (en) 2002-10-31

Family

ID=24749169

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/042332 WO2002029848A2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Country Status (9)

Country Link
US (3) US6492774B1 (en)
EP (1) EP1323179B1 (en)
JP (2) JP5100952B2 (en)
KR (1) KR100603682B1 (en)
CN (1) CN1322539C (en)
AU (1) AU2001296916A1 (en)
RU (1) RU2270492C2 (en)
TW (1) TW587272B (en)
WO (1) WO2002029848A2 (en)

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US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6926803B2 (en) * 2002-04-17 2005-08-09 Lam Research Corporation Confinement ring support assembly
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber
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US7296534B2 (en) * 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100539266B1 (en) * 2004-06-02 2005-12-27 삼성전자주식회사 Plasma processing apparatus having segment confinements
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US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US7364623B2 (en) * 2005-01-27 2008-04-29 Lam Research Corporation Confinement ring drive
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US8313610B2 (en) * 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
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US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
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US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9076826B2 (en) * 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
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US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
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CN105390362B (en) * 2015-10-29 2017-06-23 上海华力微电子有限公司 System and method for changing the O-ring on pressure-control valve
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
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KR101680850B1 (en) * 2016-06-28 2016-11-29 주식회사 기가레인 Plasma processing apparatus having control of exhaust flow path size
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Also Published As

Publication number Publication date
KR100603682B1 (en) 2006-07-20
US6492774B1 (en) 2002-12-10
JP5100952B2 (en) 2012-12-19
US7470627B2 (en) 2008-12-30
US20050051268A1 (en) 2005-03-10
AU2001296916A1 (en) 2002-04-15
US6823815B2 (en) 2004-11-30
RU2270492C2 (en) 2006-02-20
CN1479936A (en) 2004-03-03
EP1323179B1 (en) 2013-11-06
US20020190657A1 (en) 2002-12-19
TW587272B (en) 2004-05-11
KR20030051698A (en) 2003-06-25
JP2012178614A (en) 2012-09-13
CN1322539C (en) 2007-06-20
EP1323179A2 (en) 2003-07-02
JP2004511096A (en) 2004-04-08
WO2002029848A2 (en) 2002-04-11

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