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Patentes

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Número de publicaciónWO2002029858 A3
Tipo de publicaciónSolicitud
Número de solicitudPCT/US2001/027000
Fecha de publicación13 Feb 2003
Fecha de presentación30 Ago 2001
Fecha de prioridad29 Sep 2000
También publicado comoWO2002029858A2
Número de publicaciónPCT/2001/27000, PCT/US/1/027000, PCT/US/1/27000, PCT/US/2001/027000, PCT/US/2001/27000, PCT/US1/027000, PCT/US1/27000, PCT/US1027000, PCT/US127000, PCT/US2001/027000, PCT/US2001/27000, PCT/US2001027000, PCT/US200127000, WO 0229858 A3, WO 0229858A3, WO 2002/029858 A3, WO 2002029858 A3, WO 2002029858A3, WO-A3-0229858, WO-A3-2002029858, WO0229858 A3, WO0229858A3, WO2002/029858A3, WO2002029858 A3, WO2002029858A3
InventoresGangadhara S Mathad, Rajiv M Ranade
SolicitanteInfineon Technologies Corp
Exportar citaBiBTeX, EndNote, RefMan
Enlaces externos:  Patentscope, Espacenet
Deep trench etching method to reduce/eliminate formation of black silicon
WO 2002029858 A3
Resumen
In a method of etching a wafer to form a DT (deep trench) in a plasma reactor, wherein the wafer temperature is greater than the cathode temperature, the improvement of conducting etching to reduce or eliminate 'black silicon', comprising:a) providing a plasma etch reactor comprising walls defining an etch chamber; b) providing a plasma source chamber remote from and in communication with the etch chamber, and a wafer chuck or pedestal disposed in the etch chamber to seat a wafer; c) forming a plasma within the plasma source chamber and providing the plasma to the etch chamber; d) supplying RF energy to etch the wafer to a point where the wafer temperature is greater than the cathode temperature; and e) increasing the flow rate of fluorine species near the end of the DT process to provide the isotropic component needed to widen the CD.
Citas de patentes
Patente citada Fecha de presentación Fecha de publicación Solicitante Título
WO1996008036A1 *22 Jun 199514 Mar 1996Stichting Voor De Technische WetenschappenProcess for producing micromechanical structures by means of reactive ion etching
US5605600 *13 Mar 199525 Feb 1997International Business Machines CorporationEtch profile shaping through wafer temperature control
US5707486 *16 Jul 199613 Ene 1998Applied Materials, Inc.Plasma reactor using UHF/VHF and RF triode source, and process
Otras citas
Referencia
1 *JANSEN H ET AL: "The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 27, no. 1, 1 February 1995 (1995-02-01), pages 475 - 480, XP004025125, ISSN: 0167-9317
Clasificaciones
Clasificación internacionalH01L21/308, H01L21/3065, H01L21/00
Clasificación cooperativaH01L21/67069, H01L21/3065, H01L21/3081, H01J37/32082
Clasificación europeaH01L21/67S2D8D, H01J37/32M8, H01L21/308B, H01L21/3065
Eventos legales
FechaCódigoEventoDescripción
11 Abr 2002AKDesignated states
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11 Abr 2002ALDesignated countries for regional patents
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23 Oct 2002121Ep: the epo has been informed by wipo that ep was designated in this application
12 Nov 2003122Ep: pct application non-entry in european phase
7 Jun 2005NENPNon-entry into the national phase in:
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