WO2002029862A3 - Integrated semiconductor substrate bevel cleaning apparatus and method - Google Patents

Integrated semiconductor substrate bevel cleaning apparatus and method Download PDF

Info

Publication number
WO2002029862A3
WO2002029862A3 PCT/US2001/042412 US0142412W WO0229862A3 WO 2002029862 A3 WO2002029862 A3 WO 2002029862A3 US 0142412 W US0142412 W US 0142412W WO 0229862 A3 WO0229862 A3 WO 0229862A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
cleaning apparatus
integrated semiconductor
bevel cleaning
substrate bevel
Prior art date
Application number
PCT/US2001/042412
Other languages
French (fr)
Other versions
WO2002029862A2 (en
Inventor
Yeuk-Fai Edwin Mok
Alexander Ko
Bernardo Donoso
Joseph J Stevens
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2002029862A2 publication Critical patent/WO2002029862A2/en
Publication of WO2002029862A3 publication Critical patent/WO2002029862A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber

Abstract

An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.
PCT/US2001/042412 2000-10-04 2001-10-01 Integrated semiconductor substrate bevel cleaning apparatus and method WO2002029862A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23790800P 2000-10-04 2000-10-04
US60/237,908 2000-10-04
US09/785,815 US20030213772A9 (en) 1999-07-09 2001-02-16 Integrated semiconductor substrate bevel cleaning apparatus and method
US09/785,815 2001-02-16

Publications (2)

Publication Number Publication Date
WO2002029862A2 WO2002029862A2 (en) 2002-04-11
WO2002029862A3 true WO2002029862A3 (en) 2003-01-23

Family

ID=26931153

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/042412 WO2002029862A2 (en) 2000-10-04 2001-10-01 Integrated semiconductor substrate bevel cleaning apparatus and method

Country Status (3)

Country Link
US (1) US20030213772A9 (en)
TW (1) TW516086B (en)
WO (1) WO2002029862A2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US6722943B2 (en) * 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US20030199112A1 (en) 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
US6672716B2 (en) * 2002-04-29 2004-01-06 Xerox Corporation Multiple portion solid ink stick
AU2003290932A1 (en) 2002-11-15 2004-06-15 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
DE10302611B4 (en) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polished semiconductor wafer and method for its production and arrangement consisting of a semiconductor wafer and a shield
US6884152B2 (en) 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
WO2004114375A1 (en) * 2003-06-13 2004-12-29 Sophia Wen Method and apparatus for thin-layer chemical processing of semiconductor wafers
KR100618868B1 (en) * 2004-10-19 2006-08-31 삼성전자주식회사 Spinning apparatus
US20080319879A1 (en) * 2007-06-15 2008-12-25 Jim Carroll Optimized Communication Billing Management System
US9285168B2 (en) * 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
JP5651744B1 (en) 2013-07-04 2015-01-14 株式会社カイジョー Ultrasonic cleaning apparatus and ultrasonic cleaning method
US20150107619A1 (en) * 2013-10-22 2015-04-23 Taiwan Semiconductor Manufacturing Company Limited Wafer particle removal
KR101575129B1 (en) * 2014-01-13 2015-12-08 피에스케이 주식회사 Apparatus and method for transporting substrate, and apparatus for treating substrate
BE1025599B9 (en) * 2017-09-28 2019-05-28 Unilin B V B A METHOD FOR MANUFACTURING STRUCTURED PERSONAL ELEMENTS
CN112086382B (en) * 2020-08-03 2022-08-19 北京烁科精微电子装备有限公司 Wafer cleaning equipment
WO2022031268A1 (en) * 2020-08-04 2022-02-10 Applied Materials, Inc. Apparatus for removing photoresist off of photomask

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000032835A2 (en) * 1998-11-30 2000-06-08 Applied Materials, Inc. Electro-chemical deposition system
US6114254A (en) * 1996-10-15 2000-09-05 Micron Technology, Inc. Method for removing contaminants from a semiconductor wafer
EP1136592A2 (en) * 2000-03-22 2001-09-26 Applied Materials, Inc. Method and apparatus for removal of unwanted electroplating deposits
US20010037858A1 (en) * 2000-05-08 2001-11-08 Hiroki Taniyama Processing apparatus, processing system and processing method

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170871B (en) * 1952-07-05 Nippon Electric Co PROCEDURE FOR THE REMOVAL OF HEAVY AND / OR TOXIC METALS FROM WASTE GAS.
US2882209A (en) * 1957-05-20 1959-04-14 Udylite Res Corp Electrodeposition of copper from an acid bath
US3649509A (en) * 1969-07-08 1972-03-14 Buckbee Mears Co Electrodeposition systems
US3727620A (en) * 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
BE833384A (en) * 1975-03-11 1976-03-12 COPPER ELECTRODEPOSITION
JPS5271871A (en) * 1975-12-11 1977-06-15 Nec Corp Washing apparatus
JPS5819350B2 (en) * 1976-04-08 1983-04-18 富士写真フイルム株式会社 Spin coating method
US4326940A (en) * 1979-05-21 1982-04-27 Rohco Incorporated Automatic analyzer and control system for electroplating baths
US4405416A (en) * 1980-07-18 1983-09-20 Raistrick Ian D Molten salt lithium cells
US4315059A (en) * 1980-07-18 1982-02-09 The United States Of America As Represented By The United States Department Of Energy Molten salt lithium cells
US4336114A (en) * 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
EP0076569B1 (en) * 1981-10-01 1986-08-27 EMI Limited Electroplating arrangements
US4489740A (en) * 1982-12-27 1984-12-25 General Signal Corporation Disc cleaning machine
US4428815A (en) * 1983-04-28 1984-01-31 Western Electric Co., Inc. Vacuum-type article holder and methods of supportively retaining articles
US4789445A (en) * 1983-05-16 1988-12-06 Asarco Incorporated Method for the electrodeposition of metals
US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) * 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
US4519846A (en) * 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4732785A (en) * 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US5235995A (en) * 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
US5224504A (en) * 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5230743A (en) * 1988-05-25 1993-07-27 Semitool, Inc. Method for single wafer processing in which a semiconductor wafer is contacted with a fluid
US5092975A (en) * 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5316974A (en) * 1988-12-19 1994-05-31 Texas Instruments Incorporated Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer
US5039381A (en) * 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5055425A (en) * 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5162260A (en) * 1989-06-01 1992-11-10 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5259407A (en) * 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5368711A (en) * 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
US5256274A (en) * 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
JP2524436B2 (en) * 1990-09-18 1996-08-14 インターナショナル・ビジネス・マシーンズ・コーポレイション Surface treatment method
DE69231971T2 (en) * 1991-01-24 2002-04-04 Wako Pure Chem Ind Ltd Solutions for surface treatment of semiconductors
JPH0544075A (en) * 1991-08-15 1993-02-23 Nippon Riironaale Kk Copper striking method substituted for electroless copper plating
JP3200468B2 (en) * 1992-05-21 2001-08-20 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating equipment
JP2654314B2 (en) * 1992-06-04 1997-09-17 東京応化工業株式会社 Backside cleaning device
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5718813A (en) * 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5608943A (en) * 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5415890A (en) * 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5625170A (en) * 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
JP3377849B2 (en) * 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating equipment
US5528118A (en) * 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5705223A (en) * 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5952050A (en) * 1996-02-27 1999-09-14 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
US5838121A (en) * 1996-11-18 1998-11-17 Applied Materials, Inc. Dual blade robot
JPH1180989A (en) * 1997-09-02 1999-03-26 Oki Electric Ind Co Ltd Plating apparatus
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6113771A (en) * 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6071388A (en) * 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6251251B1 (en) * 1998-11-16 2001-06-26 International Business Machines Corporation Anode design for semiconductor deposition
US6113759A (en) * 1998-12-18 2000-09-05 International Business Machines Corporation Anode design for semiconductor deposition having novel electrical contact assembly
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6691719B2 (en) * 2001-01-12 2004-02-17 Applied Materials Inc. Adjustable nozzle for wafer bevel cleaning

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114254A (en) * 1996-10-15 2000-09-05 Micron Technology, Inc. Method for removing contaminants from a semiconductor wafer
WO2000032835A2 (en) * 1998-11-30 2000-06-08 Applied Materials, Inc. Electro-chemical deposition system
EP1136592A2 (en) * 2000-03-22 2001-09-26 Applied Materials, Inc. Method and apparatus for removal of unwanted electroplating deposits
US20010037858A1 (en) * 2000-05-08 2001-11-08 Hiroki Taniyama Processing apparatus, processing system and processing method

Also Published As

Publication number Publication date
TW516086B (en) 2003-01-01
US20020113039A1 (en) 2002-08-22
US20030213772A9 (en) 2003-11-20
WO2002029862A2 (en) 2002-04-11

Similar Documents

Publication Publication Date Title
WO2002029862A3 (en) Integrated semiconductor substrate bevel cleaning apparatus and method
AU2001241190A1 (en) Semiconductor wafer cleaning agent and cleaning method
SG125056A1 (en) Single wafer type substrate cleaning method and apparatus
AU7454501A (en) Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
WO2002062527A8 (en) Abrasive article suitable for modifying a semiconductor wafer
AU2002211485A1 (en) Wafer cleaning module and method for cleaning the surface of a substrate
AU2001295060A1 (en) Methods and systems for semiconductor fabrication processes
EP1420438A3 (en) Method and apparatus for etching a deep trench
WO2002058116A3 (en) Integrated system for processing semiconductor wafers
WO2001032323A8 (en) Cleaning processes using hydrofluorocarbon and/or hydrochlorofluorocarbon compounds
KR20010012977A (en) Semiconductor device and method for manufacturing the same, circuit substrate, and electronic device
WO1999034939A8 (en) Wafer container washing apparatus
SG116418A1 (en) Semiconductor wafer grinding method.
EP1429375A4 (en) System and method for performing semiconductor processing on substrate being processed
WO2003003428A3 (en) Apparatus, process and method for mounting and treating a substrate
AU2001253650A1 (en) Supercritical fluid delivery and recovery system for semiconductor wafer processing
WO2002003432A3 (en) Process for etching silicon wafers
EP0999584A3 (en) Method for manufacturing semiconductor device
AU2913901A (en) Multi wafer introduction/single wafer conveyor mode processing system and methodof processing wafers using the same
AU1781499A (en) Semiconductor etching process and apparatus
IL158094A0 (en) Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit
EP1235258A4 (en) Method for cleaning substrate and method for manufacturing semiconductor device
SG120887A1 (en) Method of processing a semiconductor wafer and substrate for semiconductor wafers used in the same
AU2002212587A1 (en) Wafer processing equipment and method for processing wafers
EP1404463A4 (en) Method and apparatus for cleaning semiconductor wafers and other flat media

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP