WO2002037569A3 - Trench gate mos semiconductor device - Google Patents

Trench gate mos semiconductor device Download PDF

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Publication number
WO2002037569A3
WO2002037569A3 PCT/US2001/031840 US0131840W WO0237569A3 WO 2002037569 A3 WO2002037569 A3 WO 2002037569A3 US 0131840 W US0131840 W US 0131840W WO 0237569 A3 WO0237569 A3 WO 0237569A3
Authority
WO
WIPO (PCT)
Prior art keywords
trench
conductivity type
upper layer
segment
filled
Prior art date
Application number
PCT/US2001/031840
Other languages
French (fr)
Other versions
WO2002037569A2 (en
WO2002037569A9 (en
Inventor
Christopher B Kocon
Thomas E Grebs
Joseph L Cumbo
Rodney S Ridley
Original Assignee
Fairchild Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Priority to DE10196760T priority Critical patent/DE10196760T1/en
Priority to JP2002540217A priority patent/JP4429601B2/en
Publication of WO2002037569A2 publication Critical patent/WO2002037569A2/en
Publication of WO2002037569A9 publication Critical patent/WO2002037569A9/en
Publication of WO2002037569A3 publication Critical patent/WO2002037569A3/en

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
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    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
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    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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Abstract

A trench MOS-gated device (200) comprises a doped monocrystalline semiconductor substrate (201) that includes an upper layer (201a) and is of a first conductivity type. An extended trench (202) in the substrate in the upper layer comprises two segments (203,204) having differing widths relative to one another: a bottom segment (204) of lesser width filled with a dielectric material (209), and an upper (203) segment of greater width lined with a dielectric material (205,206) and substantially filled with a conductive material (207), the filled upper segment of the trench forming a gate region (208). An extended doped zone (215) of a second opposite conductivity type extends from an upper surface (212) into the upper layer (210a) of the substrate only on one side of the trench (202), and a doped well region (210) of the second conductivity type overlying a drain zone (211) of the first conductivity type is disposed in the upper layer (201a) on the opposite side of the trench.
PCT/US2001/031840 2000-10-12 2001-10-11 Trench gate mos semiconductor device WO2002037569A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10196760T DE10196760T1 (en) 2000-10-12 2001-10-11 MOS gate-controlled power device with segmented trench and extended doping zone, and method for producing the same
JP2002540217A JP4429601B2 (en) 2000-10-12 2001-10-11 MOS gate power device having segmented trench and extended doping zone, and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/689,939 US6433385B1 (en) 1999-05-19 2000-10-12 MOS-gated power device having segmented trench and extended doping zone and process for forming same
US09/689,939 2000-10-12

Publications (3)

Publication Number Publication Date
WO2002037569A2 WO2002037569A2 (en) 2002-05-10
WO2002037569A9 WO2002037569A9 (en) 2002-12-05
WO2002037569A3 true WO2002037569A3 (en) 2003-03-27

Family

ID=24770456

Family Applications (1)

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PCT/US2001/031840 WO2002037569A2 (en) 2000-10-12 2001-10-11 Trench gate mos semiconductor device

Country Status (5)

Country Link
US (2) US6433385B1 (en)
JP (1) JP4429601B2 (en)
DE (1) DE10196760T1 (en)
TW (1) TW567543B (en)
WO (1) WO2002037569A2 (en)

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