WO2002042513A3 - Hollow cathode target and methods of making same - Google Patents

Hollow cathode target and methods of making same Download PDF

Info

Publication number
WO2002042513A3
WO2002042513A3 PCT/US2001/043376 US0143376W WO0242513A3 WO 2002042513 A3 WO2002042513 A3 WO 2002042513A3 US 0143376 W US0143376 W US 0143376W WO 0242513 A3 WO0242513 A3 WO 0242513A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
workpiece
making same
hollow cathode
cathode target
Prior art date
Application number
PCT/US2001/043376
Other languages
French (fr)
Other versions
WO2002042513A2 (en
Inventor
Robert B Ford
Christopher A Michaluk
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Priority to JP2002545213A priority Critical patent/JP4828782B2/en
Priority to AU2002236445A priority patent/AU2002236445A1/en
Priority to MXPA03004635A priority patent/MXPA03004635A/en
Priority to EP01985970.1A priority patent/EP1339894B1/en
Priority to KR1020037007050A priority patent/KR100831543B1/en
Priority to IL15611901A priority patent/IL156119A0/en
Publication of WO2002042513A2 publication Critical patent/WO2002042513A2/en
Publication of WO2002042513A3 publication Critical patent/WO2002042513A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.
PCT/US2001/043376 2000-11-27 2001-11-20 Hollow cathode target and methods of making same WO2002042513A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002545213A JP4828782B2 (en) 2000-11-27 2001-11-20 Hollow cathode target and method for producing the same
AU2002236445A AU2002236445A1 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same
MXPA03004635A MXPA03004635A (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same.
EP01985970.1A EP1339894B1 (en) 2000-11-27 2001-11-20 Method of manufacturing a hollow cathode magnetron sputtering target and sputtering target assembly comprising the same
KR1020037007050A KR100831543B1 (en) 2000-11-27 2001-11-20 Hollow Cathode Target and Methods of Making Same
IL15611901A IL156119A0 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US25311600P 2000-11-27 2000-11-27
US60/253,116 2000-11-27
US29541701P 2001-06-01 2001-06-01
US60/295,417 2001-06-01

Publications (2)

Publication Number Publication Date
WO2002042513A2 WO2002042513A2 (en) 2002-05-30
WO2002042513A3 true WO2002042513A3 (en) 2003-06-05

Family

ID=26942945

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/043376 WO2002042513A2 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same

Country Status (11)

Country Link
US (2) US6887356B2 (en)
EP (1) EP1339894B1 (en)
JP (1) JP4828782B2 (en)
KR (1) KR100831543B1 (en)
CN (1) CN1293229C (en)
AU (1) AU2002236445A1 (en)
IL (1) IL156119A0 (en)
MX (1) MXPA03004635A (en)
RU (1) RU2261288C2 (en)
TW (1) TW573032B (en)
WO (1) WO2002042513A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101024830B1 (en) 2002-09-13 2011-03-29 토소우 에스엠디, 인크 Non-planar sputter targets having crystallographic orientations promoting uniform deposition

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
KR20040043161A (en) * 2001-07-19 2004-05-22 허니웰 인터내셔널 인코포레이티드 Sputtering Targets, Sputter Reactors, Methods of Forming Cast Ingots, and Methods of Forming Metallic Articles
EP1449935B1 (en) * 2001-11-26 2009-03-11 Nippon Mining & Metals Co., Ltd. Sputtering target and production method therefor
US20040065546A1 (en) * 2002-10-04 2004-04-08 Michaluk Christopher A. Method to recover spent components of a sputter target
US7067197B2 (en) * 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same
TW200506080A (en) * 2003-02-25 2005-02-16 Cabot Corp Method of forming sputtering target assembly and assemblies made therefrom
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
KR20060029622A (en) * 2003-06-20 2006-04-06 캐보트 코포레이션 Method and design for sputter target attachment to a backing plate
JP4468302B2 (en) * 2003-09-12 2010-05-26 日鉱金属株式会社 Sputtering target and surface finishing method of the target
EP1674396A4 (en) * 2003-10-15 2007-08-22 Nippon Mining Co Packaging device and packaging method for hollow cathode type spattering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
WO2005064037A2 (en) * 2003-12-22 2005-07-14 Cabot Corporation High integrity sputtering target material and method for producing bulk quantities of same
US20050252268A1 (en) * 2003-12-22 2005-11-17 Michaluk Christopher A High integrity sputtering target material and method for producing bulk quantities of same
BRPI0509236A (en) * 2004-03-26 2007-11-27 Starck H C Inc refractory metal pots
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
US7922065B2 (en) 2004-08-02 2011-04-12 Ati Properties, Inc. Corrosion resistant fluid conducting parts, methods of making corrosion resistant fluid conducting parts and equipment and parts replacement methods utilizing corrosion resistant fluid conducting parts
CN101378985A (en) * 2005-01-12 2009-03-04 纽约大学 System and method for processing nanowires with holographic optical tweezers
US7998287B2 (en) * 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
AT8697U1 (en) 2005-10-14 2006-11-15 Plansee Se TUBE TARGET
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
DE112007000440B4 (en) 2006-03-07 2021-01-07 Global Advanced Metals, Usa, Inc. Process for producing deformed metal articles
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
JP4874879B2 (en) * 2007-06-21 2012-02-15 Ｊｘ日鉱日石金属株式会社 Erbium sputtering target and manufacturing method thereof
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
WO2009084976A1 (en) 2007-12-28 2009-07-09 Institute For Metals Superplasticity Problems Of The Russian Academy Of Sciences (Imsp Ras) Cold cathode and a method for the production thereof
DE102008007605A1 (en) 2008-02-04 2009-08-06 Uhde Gmbh Modified nickel
WO2010051040A1 (en) * 2008-11-03 2010-05-06 Tosoh Smd, Inc. Method of making a sputter target and sputter targets made thereby
EP2383354B1 (en) * 2009-01-29 2018-03-07 JX Nippon Mining & Metals Corporation Method for manufacturing high-purity erbium, high-purity erbium, sputtering target composed of high-purity erbium
SG173141A1 (en) * 2009-05-22 2011-08-29 Jx Nippon Mining & Metals Corp Tantalum sputtering target
RU2454483C2 (en) * 2010-05-19 2012-06-27 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Manufacturing method of cast target from tantalum-based alloy for magnetron sputtering
US9085819B2 (en) * 2010-08-09 2015-07-21 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
JP5607512B2 (en) * 2010-11-24 2014-10-15 古河電気工業株式会社 Cylindrical target material, manufacturing method thereof, and sheet coating method thereof
US8869443B2 (en) 2011-03-02 2014-10-28 Ati Properties, Inc. Composite gun barrel with outer sleeve made from shape memory alloy to dampen firing vibrations
CN102517550B (en) * 2011-12-20 2014-07-09 宁波江丰电子材料有限公司 High purity tantalum target and preparation process thereof
US10118259B1 (en) 2012-12-11 2018-11-06 Ati Properties Llc Corrosion resistant bimetallic tube manufactured by a two-step process
US9508532B2 (en) 2013-03-13 2016-11-29 Bb Plasma Design Ab Magnetron plasma apparatus
RU2548019C1 (en) * 2013-11-28 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный университет" Method and device for extraction from cylindrical target of target components received as result of explosure
US9771637B2 (en) 2014-12-09 2017-09-26 Ati Properties Llc Composite crucibles and methods of making and using the same
WO2016187011A2 (en) * 2015-05-15 2016-11-24 Materion Corporation Methods for surface preparation of sputtering target
CN111590279A (en) * 2020-06-03 2020-08-28 福建阿石创新材料股份有限公司 High-purity metal rotary target material and preparation method thereof
CN112808833B (en) * 2020-12-31 2023-01-10 有研科技集团有限公司 Method for preparing high-performance ferromagnetic target material
RU2763719C1 (en) * 2021-04-27 2021-12-30 Федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный технический университет"(ОмГТУ) Method for manufacturing cathodes for magnetron sputtering installations made of refractory metals

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274814A (en) * 1964-05-25 1966-09-27 Titanium Metals Corp Rolling mill
US3800406A (en) * 1969-03-20 1974-04-02 Trw Inc Tantalum clad niobium
US3884793A (en) 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
US4505764A (en) * 1983-03-08 1985-03-19 Howmet Turbine Components Corporation Microstructural refinement of cast titanium
US5437778A (en) 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
JPH0774436B2 (en) * 1990-09-20 1995-08-09 富士通株式会社 Thin film formation method
US5171415A (en) 1990-12-21 1992-12-15 Novellus Systems, Inc. Cooling method and apparatus for magnetron sputtering
CA2098725A1 (en) * 1991-01-28 1992-07-29 Daniel R. Marx Target for cathode sputtering
US5656138A (en) 1991-06-18 1997-08-12 The Optical Corporation Of America Very high vacuum magnetron sputtering method and apparatus for precision optical coatings
JPH04371578A (en) 1991-06-19 1992-12-24 Sony Corp Magnetron sputtering device
US5188717A (en) 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering
JPH06158297A (en) 1992-11-27 1994-06-07 Mitsubishi Kasei Corp Sputtering target and its production
US5693197A (en) 1994-10-06 1997-12-02 Hmt Technology Corporation DC magnetron sputtering method and apparatus
JP3655334B2 (en) 1994-12-26 2005-06-02 松下電器産業株式会社 Magnetron sputtering equipment
JPH08311642A (en) 1995-03-10 1996-11-26 Toshiba Corp Magnetron sputtering method and sputtering target
US5770025A (en) 1995-08-03 1998-06-23 Nihon Shinku Gijutsu Kabushiki Kaisha Magnetron sputtering apparatus
CH691643A5 (en) 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetron sputtering and the use thereof.
DE19651615C1 (en) 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Sputter coating to produce carbon layer for e.g. magnetic heads
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5855745A (en) 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JP3096258B2 (en) 1997-07-18 2000-10-10 芝浦メカトロニクス株式会社 Each leaf type magnetron sputtering system
US6004656A (en) * 1997-11-14 1999-12-21 3M Innovative Properties Company Color changeable device
JPH11269621A (en) * 1997-12-24 1999-10-05 Toho Titanium Co Ltd Method for working high-purity titanium material
DE19819785A1 (en) 1998-05-04 1999-11-11 Leybold Systems Gmbh Atomizing cathode based on the magnetron principle
US6323055B1 (en) * 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
JPH11350120A (en) 1998-06-03 1999-12-21 Japan Energy Corp Diffusion joined sputtering target assembly and its production
KR100600908B1 (en) 1998-06-29 2006-07-13 가부시끼가이샤 도시바 Sputter target
KR20000062587A (en) 1999-03-02 2000-10-25 로버트 에이. 바쎄트 Method of manufacturing and refilling sputter targets by thermal spray for use and reuse in thin film deposition
US6283357B1 (en) * 1999-08-03 2001-09-04 Praxair S.T. Technology, Inc. Fabrication of clad hollow cathode magnetron sputter targets
US6462339B1 (en) 2000-09-20 2002-10-08 Cabot Corporation Method for quantifying the texture homogeneity of a polycrystalline material
JP3768807B2 (en) 2000-11-24 2006-04-19 株式会社日鉱マテリアルズ Method for manufacturing cylindrical metal target with bottom

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CLARK J B ET AL: "Influence of transverse rolling on the microstructural and texture development in pure tantalum", METALLURGICAL TRANSACTIONS A (PHYSICAL METALLURGY AND MATERIALS SCIENCE), AUG. 1992, USA, vol. 23A, no. 8, pages 2183 - 2191, XP001108813, ISSN: 0360-2133 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101024830B1 (en) 2002-09-13 2011-03-29 토소우 에스엠디, 인크 Non-planar sputter targets having crystallographic orientations promoting uniform deposition

Also Published As

Publication number Publication date
CN1293229C (en) 2007-01-03
EP1339894A2 (en) 2003-09-03
JP4828782B2 (en) 2011-11-30
CN1531605A (en) 2004-09-22
KR20030057557A (en) 2003-07-04
US20030019746A1 (en) 2003-01-30
IL156119A0 (en) 2003-12-23
AU2002236445A1 (en) 2002-06-03
JP2004536958A (en) 2004-12-09
RU2003119076A (en) 2005-01-10
US6887356B2 (en) 2005-05-03
RU2261288C2 (en) 2005-09-27
WO2002042513A2 (en) 2002-05-30
EP1339894B1 (en) 2014-04-23
US7468110B2 (en) 2008-12-23
US20050167015A1 (en) 2005-08-04
MXPA03004635A (en) 2004-05-17
KR100831543B1 (en) 2008-05-21
TW573032B (en) 2004-01-21

Similar Documents

Publication Publication Date Title
WO2002042513A3 (en) Hollow cathode target and methods of making same
WO2002036847A3 (en) Sputtering target
WO2006086319A3 (en) Sputtering target and method of fabrication
AU2103001A (en) High-strength sputtering targets and method of making same
WO2005071135A3 (en) Tantalum and other metals with (110) orientation
CA2454815A1 (en) Composite utility knife blade, and method of making such a blade
AU2381000A (en) Structure for and method of manufacturing aerodynamic expanded metal
AU2003292335A1 (en) Method for increasing the range of production of a metal product rolling installation and installation therefor
EP1380668A4 (en) Manganese alloy sputtering target and method for producing the same
AU2003268697A1 (en) Aluminum alloy for casting-forging, aluminum cast/forged article, and method for manufacture thereof
AU4279000A (en) Bolted metal joist and method of manufacturing the same
AU4515201A (en) Improved sputtering target and methods of making and using same
CA2353407A1 (en) Method of making an as-rolled multi-purpose weathering steel plate and product therefrom
CA2205943A1 (en) Corrosion inhibitor
CA2202430A1 (en) Oxide film, laminate and methods for their production
AU2002236551A1 (en) Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
AU6025899A (en) Method of manufacturing enhanced finish sputtering targets
WO2003066929A3 (en) Textured-metastable aluminum alloy sputter targets
EP1349222A3 (en) Improved expanded grid
AU2002218382A1 (en) Method for making a strip or a workpiece cut out from a cold rolled maraging steel strip
AU2003288137A1 (en) Firearm and method for the production thereof
WO2006076333A3 (en) High integrity sputtering target material and method for producing bulk quantities of same
CA2225743A1 (en) Method and plant for the manufacture of a deep-drawing steel strip or sheet
EP0837147A3 (en) A method for manufacturing a stainless steel strip
AU5238700A (en) Method of preparing zinc alloy foil

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 156119

Country of ref document: IL

Ref document number: PA/a/2003/004635

Country of ref document: MX

WWE Wipo information: entry into national phase

Ref document number: 2002545213

Country of ref document: JP

Ref document number: 1020037007050

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2001985970

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2003119076

Country of ref document: RU

Kind code of ref document: A

Format of ref document f/p: F

Country of ref document: RU

Kind code of ref document: A

Format of ref document f/p: F

WWP Wipo information: published in national office

Ref document number: 1020037007050

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 018222552

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2001985970

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642