WO2002043119A2 - An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same - Google Patents
An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same Download PDFInfo
- Publication number
- WO2002043119A2 WO2002043119A2 PCT/US2001/050830 US0150830W WO0243119A2 WO 2002043119 A2 WO2002043119 A2 WO 2002043119A2 US 0150830 W US0150830 W US 0150830W WO 0243119 A2 WO0243119 A2 WO 0243119A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- seem
- layer
- insulating material
- film
- ultralow
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037005450A KR100586133B1 (en) | 2000-10-25 | 2001-10-25 | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same |
EP01987525A EP1352107A2 (en) | 2000-10-25 | 2001-10-25 | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same |
JP2002544765A JP4272424B2 (en) | 2000-10-25 | 2001-10-25 | Ultralow dielectric constant material as an in-level or inter-level dielectric of a semiconductor element, method for manufacturing the same, and electronic device including the same |
CNB018204090A CN100386472C (en) | 2000-10-25 | 2001-10-25 | Ultralow dielectric constant material as intralevel or interlevel dielectric in semiconductor device, method for fabricating the same, and electronic device containing the same |
US10/174,749 US6768200B2 (en) | 2000-10-25 | 2002-06-19 | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24316900P | 2000-10-25 | 2000-10-25 | |
US60/243,169 | 2000-10-25 | ||
US09/769,089 US6441491B1 (en) | 2000-10-25 | 2001-01-25 | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same |
US09/769,089 | 2001-01-25 | ||
US09/938,949 US6756323B2 (en) | 2001-01-25 | 2001-08-24 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
US09/938,949 | 2001-08-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/938,949 Continuation US6756323B2 (en) | 2000-10-25 | 2001-08-24 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/174,749 Continuation-In-Part US6768200B2 (en) | 2000-10-25 | 2002-06-19 | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002043119A2 true WO2002043119A2 (en) | 2002-05-30 |
WO2002043119A3 WO2002043119A3 (en) | 2003-03-13 |
Family
ID=27399636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/050830 WO2002043119A2 (en) | 2000-10-25 | 2001-10-25 | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US6770573B2 (en) |
EP (1) | EP1352107A2 (en) |
JP (2) | JP4272424B2 (en) |
KR (1) | KR100586133B1 (en) |
CN (1) | CN100386472C (en) |
SG (2) | SG137694A1 (en) |
WO (1) | WO2002043119A2 (en) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US6531398B1 (en) | 2000-10-30 | 2003-03-11 | Applied Materials, Inc. | Method of depositing organosillicate layers |
EP1302792A2 (en) * | 2001-10-11 | 2003-04-16 | Dalsa Semiconductor Inc. | Method of reducing stress-induced mechanical problems in optical-quality thin films |
US6596627B2 (en) | 2000-01-18 | 2003-07-22 | Applied Materials Inc. | Very low dielectric constant plasma-enhanced CVD films |
EP1354980A1 (en) * | 2002-04-17 | 2003-10-22 | Air Products And Chemicals, Inc. | Method for forming a porous SiOCH layer. |
WO2004079814A2 (en) * | 2003-03-03 | 2004-09-16 | Applied Materials Inc. | Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices |
EP1464726A2 (en) * | 2003-04-01 | 2004-10-06 | Air Products And Chemicals, Inc. | CVD method for forming a porous low dielectric constant SiOCH film |
US6806207B2 (en) | 1998-02-11 | 2004-10-19 | Applied Materials Inc. | Method of depositing low K films |
US6815373B2 (en) | 2002-04-16 | 2004-11-09 | Applied Materials Inc. | Use of cyclic siloxanes for hardness improvement of low k dielectric films |
EP1482070A1 (en) * | 2003-05-29 | 2004-12-01 | Air Products And Chemicals, Inc. | Mechanical enhancer additives for low dielectric films |
US6846515B2 (en) | 2002-04-17 | 2005-01-25 | Air Products And Chemicals, Inc. | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants |
US6936309B2 (en) | 2002-04-02 | 2005-08-30 | Applied Materials, Inc. | Hardness improvement of silicon carboxy films |
US6943127B2 (en) | 2001-06-18 | 2005-09-13 | Applied Materials Inc. | CVD plasma assisted lower dielectric constant SICOH film |
JP2005530363A (en) * | 2002-06-19 | 2005-10-06 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Ultra low dielectric constant materials as in-layer or interlayer dielectrics for semiconductor devices |
SG117496A1 (en) * | 2003-06-23 | 2005-12-29 | Air Prod & Chem | Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane |
EP1617957A2 (en) * | 2003-03-18 | 2006-01-25 | International Business Machines Corporation | Ultra low k (ulk) sicoh film and method |
EP1666632A3 (en) * | 2004-09-28 | 2008-01-23 | Air Products And Chemicals, Inc. | Porous low dielectric constant compositions and methods for making and using same |
JP2010021575A (en) * | 2003-11-28 | 2010-01-28 | Nec Corp | Method for manufacturing porous insulating film, porous insulating film, and semiconductor device |
US7807267B2 (en) | 2002-09-09 | 2010-10-05 | Mitsui Chemicals, Inc. | Method of modifying porous film, modified porous film and use of same |
JP2011061228A (en) * | 2002-11-14 | 2011-03-24 | Internatl Business Mach Corp <Ibm> | High reliability low dielectric constant interconnect structure provided with hybrid dielectric body |
US8293001B2 (en) | 2002-04-17 | 2012-10-23 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
JP2014150287A (en) * | 2002-04-17 | 2014-08-21 | Air Products And Chemicals Inc | Porogen, porogenated precursor and use of the same to obtain porous organosilica glass film with low dielectric constant |
US8951342B2 (en) | 2002-04-17 | 2015-02-10 | Air Products And Chemicals, Inc. | Methods for using porogens for low k porous organosilica glass films |
US9061317B2 (en) | 2002-04-17 | 2015-06-23 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
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US6660656B2 (en) * | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6627532B1 (en) * | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6800571B2 (en) * | 1998-09-29 | 2004-10-05 | Applied Materials Inc. | CVD plasma assisted low dielectric constant films |
US6838393B2 (en) * | 2001-12-14 | 2005-01-04 | Applied Materials, Inc. | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US20080268177A1 (en) * | 2002-05-17 | 2008-10-30 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
US7485570B2 (en) * | 2002-10-30 | 2009-02-03 | Fujitsu Limited | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device |
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US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
US7060638B2 (en) | 2004-03-23 | 2006-06-13 | Applied Materials | Method of forming low dielectric constant porous films |
US7049247B2 (en) * | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
JP2006024670A (en) * | 2004-07-07 | 2006-01-26 | Sony Corp | Manufacturing method for semiconductor device |
US7491658B2 (en) * | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
US20060166491A1 (en) * | 2005-01-21 | 2006-07-27 | Kensaku Ida | Dual damascene interconnection having low k layer and cap layer formed in a common PECVD process |
US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
CN100437934C (en) * | 2005-02-08 | 2008-11-26 | 联华电子股份有限公司 | Method for decreasing granule amount of material layer with low dielectric constant |
US7202564B2 (en) * | 2005-02-16 | 2007-04-10 | International Business Machines Corporation | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
US7253105B2 (en) * | 2005-02-22 | 2007-08-07 | International Business Machines Corporation | Reliable BEOL integration process with direct CMP of porous SiCOH dielectric |
JP2007258403A (en) * | 2006-03-23 | 2007-10-04 | United Microelectronics Corp | Porous low dielectric constant thin film and its manufacturing method |
US20080009141A1 (en) * | 2006-07-05 | 2008-01-10 | International Business Machines Corporation | Methods to form SiCOH or SiCNH dielectrics and structures including the same |
JP5165914B2 (en) * | 2007-03-30 | 2013-03-21 | 三井化学株式会社 | Porous silica film and method for producing the same |
CN104746045B (en) * | 2013-12-26 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Chemical gaseous phase depositing process and device |
US10361137B2 (en) * | 2017-07-31 | 2019-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
CN109585264B (en) * | 2018-08-26 | 2020-12-22 | 合肥安德科铭半导体科技有限公司 | Flowable chemical vapor deposition method for silicon nitride film |
KR20210091825A (en) * | 2018-12-13 | 2021-07-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods for Depositing Phosphorus Doped Silicon Nitride Films |
Citations (3)
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EP0826791A2 (en) * | 1996-08-29 | 1998-03-04 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
WO2000024050A1 (en) * | 1998-10-22 | 2000-04-27 | Applied Materials, Inc. | Cvd nanoporous silica low dielectric constant films |
US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
JP3888794B2 (en) * | 1999-01-27 | 2007-03-07 | 松下電器産業株式会社 | Method for forming porous film, wiring structure and method for forming the same |
US6841256B2 (en) * | 1999-06-07 | 2005-01-11 | Honeywell International Inc. | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes |
US6756323B2 (en) * | 2001-01-25 | 2004-06-29 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
-
2001
- 2001-10-25 EP EP01987525A patent/EP1352107A2/en not_active Withdrawn
- 2001-10-25 JP JP2002544765A patent/JP4272424B2/en not_active Expired - Fee Related
- 2001-10-25 CN CNB018204090A patent/CN100386472C/en not_active Expired - Fee Related
- 2001-10-25 SG SG200504909-3A patent/SG137694A1/en unknown
- 2001-10-25 WO PCT/US2001/050830 patent/WO2002043119A2/en active IP Right Grant
- 2001-10-25 SG SG200504912-7A patent/SG137695A1/en unknown
- 2001-10-25 KR KR1020037005450A patent/KR100586133B1/en not_active IP Right Cessation
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2003
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2006
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Also Published As
Publication number | Publication date |
---|---|
CN100386472C (en) | 2008-05-07 |
EP1352107A2 (en) | 2003-10-15 |
JP4410783B2 (en) | 2010-02-03 |
JP2007036291A (en) | 2007-02-08 |
CN1479804A (en) | 2004-03-03 |
JP2004515057A (en) | 2004-05-20 |
US20030139062A1 (en) | 2003-07-24 |
SG137695A1 (en) | 2007-12-28 |
US6770573B2 (en) | 2004-08-03 |
SG137694A1 (en) | 2007-12-28 |
KR100586133B1 (en) | 2006-06-07 |
WO2002043119A3 (en) | 2003-03-13 |
KR20030044014A (en) | 2003-06-02 |
JP4272424B2 (en) | 2009-06-03 |
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