WO2002044293A3 - Method and composition for the removal of residual materials during substrate planarization - Google Patents
Method and composition for the removal of residual materials during substrate planarization Download PDFInfo
- Publication number
- WO2002044293A3 WO2002044293A3 PCT/US2001/043267 US0143267W WO0244293A3 WO 2002044293 A3 WO2002044293 A3 WO 2002044293A3 US 0143267 W US0143267 W US 0143267W WO 0244293 A3 WO0244293 A3 WO 0244293A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- substrate
- copper containing
- ions
- polishing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 239000000463 material Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052802 copper Inorganic materials 0.000 abstract 5
- 239000010949 copper Substances 0.000 abstract 5
- 239000002738 chelating agent Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000005498 polishing Methods 0.000 abstract 4
- 229910052723 transition metal Inorganic materials 0.000 abstract 4
- 150000003624 transition metals Chemical class 0.000 abstract 4
- 238000007517 polishing process Methods 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002546644A JP2004526296A (en) | 2000-12-01 | 2001-11-20 | Method and composition for removing residual material during planarization of a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/729,132 US20020068454A1 (en) | 2000-12-01 | 2000-12-01 | Method and composition for the removal of residual materials during substrate planarization |
US09/729,132 | 2000-12-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002044293A2 WO2002044293A2 (en) | 2002-06-06 |
WO2002044293A3 true WO2002044293A3 (en) | 2003-02-13 |
Family
ID=24929722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/043267 WO2002044293A2 (en) | 2000-12-01 | 2001-11-20 | Method and composition for the removal of residual materials during substrate planarization |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020068454A1 (en) |
JP (1) | JP2004526296A (en) |
TW (1) | TWI267111B (en) |
WO (1) | WO2002044293A2 (en) |
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JP2012146970A (en) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | Polishing solution and substrate polishing method using polishing solution |
EP2502969A1 (en) * | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
CN103146307B (en) * | 2013-03-28 | 2014-12-10 | 天津理工大学 | Nano polishing solution for chemical/mechanical polishing |
US20140308814A1 (en) * | 2013-04-15 | 2014-10-16 | Applied Materials, Inc | Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions |
CN106433482B (en) * | 2016-06-29 | 2020-09-18 | 上海华明高纳稀土新材料有限公司 | Aluminum oxide polishing powder and preparation method thereof |
KR102305256B1 (en) * | 2016-09-21 | 2021-09-29 | 가부시키가이샤 후지미인코퍼레이티드 | surface treatment composition |
TWI819009B (en) | 2018-06-27 | 2023-10-21 | 美商應用材料股份有限公司 | Chemical mechanical polishing apparatus and method of chemical mechanical polishing |
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CN111863712A (en) * | 2019-04-24 | 2020-10-30 | 台湾积体电路制造股份有限公司 | Semiconductor structure and method of forming a semiconductor structure |
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WO2002020682A2 (en) * | 2000-09-08 | 2002-03-14 | Applied Materials, Inc. | Method of initiating copper cmp process |
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-
2000
- 2000-12-01 US US09/729,132 patent/US20020068454A1/en not_active Abandoned
-
2001
- 2001-11-20 WO PCT/US2001/043267 patent/WO2002044293A2/en active Application Filing
- 2001-11-20 JP JP2002546644A patent/JP2004526296A/en not_active Withdrawn
- 2001-11-30 TW TW090129739A patent/TWI267111B/en active
-
2003
- 2003-04-21 US US10/419,440 patent/US7022608B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0401147A2 (en) * | 1989-03-07 | 1990-12-05 | International Business Machines Corporation | A method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
WO1999053532A1 (en) * | 1998-04-10 | 1999-10-21 | Ferro Corporation | Slurry for chemical-mechanical polishing metal surfaces |
WO2000053691A1 (en) * | 1999-03-10 | 2000-09-14 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
WO2002020682A2 (en) * | 2000-09-08 | 2002-03-14 | Applied Materials, Inc. | Method of initiating copper cmp process |
Also Published As
Publication number | Publication date |
---|---|
US20020068454A1 (en) | 2002-06-06 |
TWI267111B (en) | 2006-11-21 |
JP2004526296A (en) | 2004-08-26 |
US20030216049A1 (en) | 2003-11-20 |
WO2002044293A2 (en) | 2002-06-06 |
US7022608B2 (en) | 2006-04-04 |
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