WO2002047171A1 - High voltage vertical conduction superjunction semiconductor device - Google Patents

High voltage vertical conduction superjunction semiconductor device Download PDF

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Publication number
WO2002047171A1
WO2002047171A1 PCT/US2001/047275 US0147275W WO0247171A1 WO 2002047171 A1 WO2002047171 A1 WO 2002047171A1 US 0147275 W US0147275 W US 0147275W WO 0247171 A1 WO0247171 A1 WO 0247171A1
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Prior art keywords
trenches
dielectric
trench
conductivity type
silicon
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Application number
PCT/US2001/047275
Other languages
French (fr)
Inventor
Daniel M. Kinzer
Srikant Sridevan
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International Rectifier Corporation
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Publication date
Application filed by International Rectifier Corporation filed Critical International Rectifier Corporation
Priority to AU2002228895A priority Critical patent/AU2002228895A1/en
Priority to DE10196990T priority patent/DE10196990T1/en
Publication of WO2002047171A1 publication Critical patent/WO2002047171A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Definitions

  • This invention relates to semiconductor devices and more specifically relates to novel vertical conduction superjunction type devices and their methods of manufacture.
  • Supequnction semiconductor devices are well known and generally provide plural layers of P and N regions connected between a source and drain region.
  • current flow can proceed, for example, through the N type regions, which have a relatively high N type concentration.
  • the device has a relatively low on resistance per unit area, or R DS0N -
  • the adjacent P and N regions are caused to fully deplete, thus blocking current flow and turning the device off.
  • the present invention provides a novel sup erj unction structure capable of blocking very high voltages, while having an ultra low on-resistance in the conduction mode.
  • a plurality of deep P-type regions are shorted to the ground terminal placed within the N-type drift regions to assist in the depletion of these N-type regions during the blocking mode and to allow the use of even higher doping in the N-type regions. This further reduces the on-resistance contribution of the drift region, which is the principal source of on-resistance in devices in a high voltage range.
  • the deep P- type regions are formed by etching deep trenches and doping the trench sidewalls with the appropriate P-type dose. The use of trench gates further allows increased density and reduced on-resistance.
  • the deep trenches are lined with an oxide film and then filled with a SIPOS (semi- insulating polysilicon) layer which is shorted to the drain through an opening in the oxide liner.
  • SIPOS sini- insulating polysilicon
  • the SIPOS is also shorted to the source at the top of the structure. This provides a highly resistive leakage path between source and drain causing the potential distribution to be uniform, thus reinforcing the RESURF effect of the trench sidewall doping.
  • the oxide used to fill the trench is replaced by alternate layers of oxide (SiO 2 ) and nitride (Si 3 N 4 ).
  • the thermal coefficient of expansion of the nitride layer is greater than that of the oxide and of the parent silicon so that when the dielectric deposit cools, it shrinks as much as the silicon, reducing the material stress that would otherwise be present, had the dielectric had a different expansion coefficient from that of the silicon.
  • Figure 1 is a cross-section of a small portion of a supequnction chip made in accordance with the invention.
  • Figure 2 is a cross-section of a small portion of a supequnction chip made in accordance with a second feature of the invention and using a SIPOS filler in the vertical trenches.
  • Figure 3 is a cross-section of a trench of Figure 1 in which the trench dielectric consists of layers of oxide and nitride which provide thermal expansion compensation to the surrounding silicon.
  • Substrate 1 is a low resistivity N 4" type substrate.
  • An N ⁇ type epitaxial layer 2 is grown atop substrate 1 to a thickness of about 45 micrometers and doped to a concentration about 10 l ⁇ impurity atoms per cm 3 .
  • a P base region 13 about 3 micrometers deep " is formed in the top surface of region 2.
  • a plurality of parallel grooves or trenches 3, which are each about 35 micrometers deep and about 5 micrometers wide, and spaced apart by about 5 micrometers are then etched into the upper surface of the silicon, through P base 13 and into the N epi body 2.
  • each of trenches 3 are doped P type, by any suitable process, and are shown as P layer 4 which lines each groove 3.
  • P regions 4 electrically contact P base 13 while the mesa shaped region of epi 2 between the trenches 3 remains of the N type.
  • the doses in N " epi layer 2 and P region 4 can be varied, or tailored, to obtain desired switching characteristics.
  • the trenches 3 are then filled with a dielectric material 6, which may be a single dielectric or a combination of two or more dielectric media as later described in Figure 3.
  • Shallow trenches such as trench 12 are then etched through P base layer 13, and into region 2, between pairs of trenches 4.
  • a gate oxide 7 is then grown over and lines the interior of trenches 12, and a conductor material 8, for example, conductive poly silicon, fills the trenches 12, forming the gate electrode of the final device.
  • the conductivity of region 13 adjoining gate insulation 7 can now be conventionally modulated by the application of bias voltage to gate electrode 8.
  • Shallow trenches 9a are then etched through source regions 9 and into the P base on opposite sides of gate 8, and a source contact metal 11 is applied to the device surface, making contact to N+ sources 9 and P bases 13. Note that an insulation oxide 15 insulates gate 8 from source 11.
  • any desired topology such as laterally elongated parallel stripes or a cellular geometry such a rectangular or circular hole can be used for trenches 3.
  • the base 13, source regions 9, gate oxide 7 and gate 8 form together a MOSgate type structure for controlling the conduction and blocldng of the semiconductor device.
  • the operation of the device of Figure 1 is as follows, considering first its operation in the blocking mode: When the gate 8 is grounded with respect to the source 10 and a high relative bias applied to the drain 11, the alternate N and P regions 2 and 4 deplete out, allowing an almost uniform electric field distribution in the region between the trenches 3. The doping in, and thicknesses of the regions 2 and 4 must be carefully controlled as well known, to obtain optimal blocking performance.
  • N-type channel is formed on the channel surface between base 13 and gate oxide 7.
  • the device can now conduct current and the application of a small bias to the drain will cause a current to flow in the device with ultra low R DSON -
  • the use of deep trenches 3 to form the P-type regions 4 allows the use of lower resistivity N-type drift conduction regions 2 than would be allowed by conventional devices. Further, the use of vertical trenches as opposed to successive horizontal epitaxial layers as in the prior art allows higher device density (by a factor of at least 30-40%) and further reduces the conduction losses in the device.
  • FIG. 2 differs from that of Figure 1 in that the interior of trenches 3 is filled with a semi- insulating polysilicon (SIPOS) body 20 instead of the dielectric filler of Figure 1.
  • SIPOS semi- insulating polysilicon
  • the tops 25 of the SIPOS body 20 are connected to sources 9 and its bottom is connected to the N type epi layer 2. Note that the bottoms of trenches 3 in Figure 2 are not covered with insulation as in Figure 1.
  • the SIPOS bodies provide a highly resistive leakage current path between source 9 and drain (2/1/11), forcing a uniform potential distribution along the length of the trenches 3, thus reinforcing the RESURF effect of the trench sidewall doping. That is, during blocking, when the gate 8 is grounded with respect to the source 10 and a high relative bias applied to the drain 11, the regions 5 and 4 deplete out allowing an almost uniform electric field distribution in the region between the trenches 3. The doping in the regions 4 and 5 must be carefully controlled to obtain optimal blocking performance.
  • the highly resistive leakage path between source 10 and drain 11 through the SIPOS film 20 reinforces this almost uniform electric field distribution due to the resistive potential distribution along the SIPOS. Further, use of the SIPOS reinforces the RESURF effect of the P-type sidewalls and reduces the effect of variations in the P-type sidewall does and epi resistivity.
  • the SIPOS film 20 however does not affect operation in the forward conduction mode.
  • FIG. 3 there is shown a novel filler for the trench of Figure 1 which prevents the "fanning-out" effect which sometimes occurs when filling parallel spaced trenches with an oxide filler.
  • Numerals identical to those of Figures 1 and 2 identify identical elements in Figure 3.
  • the fan phenomenon is caused when hot oxide is grown or deposited into deep trenches in any silicon trench-type device.
  • the oxide does not shrink as much as the silicon so that, when cool, the oxide tends to spread apart the trench. This effect is magnified in a product having many parallel trenches, all filled at the same time, causing the silicon to warp and sometimes fracture.
  • the trench 3 is first partly filled, along its height, with an initial thin oxide liner 30.
  • the remainder of the trench 3 is then filled with nitride (Si 3 O 4 ) 31 which has a temperature coefficient of expansion which is greater than that of both silicon and oxide. Consequently, upon cooling, the total lateral dimension change of the oxide and nitride layers 30 and 31 is more closely matched to that of the silicon 2 to avoid or reduce stress on the silicon 2.

Abstract

A high voltage vertical conduction semiconductor device has a plurality of deep trenches or holes (3) in a lightly doped body (2) of one conductivity type. A diffusion (4) of the other conductivity type is formed in the trench walls to a depth and a concentration which matches that of the body so that, under reverse blocking, both regions fully deplete. The elongated trench or hole (3) is filled with a dielectric which may be a composite of nitride and oxide layers having a lateral dimension change matched to that of the silicon. The filler may also be a highly resistive SIPOS (20) which permits leakage current flow from source to drain to ensure a uniform electric field distribution along the length of the trench during blocking.

Description

Published: For two-letter codes and other abbreviations, refer to the "Guid¬
— with international search report ance Notes on Codes and Abbreviations " appearing at the begin¬
— before the expiration of the time limit for amending the ning of each regular issue of the PCT Gazette claims and to be repubhshed in the event of receipt of amendments
- 1 -
TITLE: HIGH VOLTAGE VERTICAL CONDUCTION
SUPERJUNCTION SEMICONDUCTOR DEVICE
FIELD OF THE INVENTION
This invention relates to semiconductor devices and more specifically relates to novel vertical conduction superjunction type devices and their methods of manufacture.
BACKGROUND OF THE INVENTION
Supequnction semiconductor devices are well known and generally provide plural layers of P and N regions connected between a source and drain region. In order to turn the device on in a forward conduction direction, current flow can proceed, for example, through the N type regions, which have a relatively high N type concentration. Thus, the device has a relatively low on resistance per unit area, or RDS0N- To turn the device off, the adjacent P and N regions are caused to fully deplete, thus blocking current flow and turning the device off.
Supequnction devices of these types are shown in U.S. Patents 5,216,275 and 4,754,310, and are also shown in copending application Serial No.
60/113,641, filed December 23, 1998 (IR-1676 Prov) in the name of Boden, and assigned to the assignee of the present invention. - 2 -
BRIEF DESCRIPTION OF THE PRESENT INVENTION
The present invention provides a novel sup erj unction structure capable of blocking very high voltages, while having an ultra low on-resistance in the conduction mode. In accordance with a first feature of the invention a plurality of deep P-type regions are shorted to the ground terminal placed within the N-type drift regions to assist in the depletion of these N-type regions during the blocking mode and to allow the use of even higher doping in the N-type regions. This further reduces the on-resistance contribution of the drift region, which is the principal source of on-resistance in devices in a high voltage range. The deep P- type regions are formed by etching deep trenches and doping the trench sidewalls with the appropriate P-type dose. The use of trench gates further allows increased density and reduced on-resistance.
In accordance with a second feature of the invention, the deep trenches are lined with an oxide film and then filled with a SIPOS (semi- insulating polysilicon) layer which is shorted to the drain through an opening in the oxide liner. The SIPOS is also shorted to the source at the top of the structure. This provides a highly resistive leakage path between source and drain causing the potential distribution to be uniform, thus reinforcing the RESURF effect of the trench sidewall doping.
In accordance with a third feature of the invention, the oxide used to fill the trench is replaced by alternate layers of oxide (SiO2) and nitride (Si3N4). The thermal coefficient of expansion of the nitride layer is greater than that of the oxide and of the parent silicon so that when the dielectric deposit cools, it shrinks as much as the silicon, reducing the material stress that would otherwise be present, had the dielectric had a different expansion coefficient from that of the silicon.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a cross-section of a small portion of a supequnction chip made in accordance with the invention.
Figure 2 is a cross-section of a small portion of a supequnction chip made in accordance with a second feature of the invention and using a SIPOS filler in the vertical trenches. Figure 3 is a cross-section of a trench of Figure 1 in which the trench dielectric consists of layers of oxide and nitride which provide thermal expansion compensation to the surrounding silicon.
DETAILED DESCRIPTION OF THE DRAWINGS
Referring first to Figure 1, there is shown a very small portion of the substrate 1 upon which the device is build. Note that dimensions are exaggerated in Figure 1 for purpose of clarity of description. Substrate 1 is a low resistivity N4" type substrate. An N~type epitaxial layer 2 is grown atop substrate 1 to a thickness of about 45 micrometers and doped to a concentration about 10lδ impurity atoms per cm3. A P base region 13 about 3 micrometers deep" is formed in the top surface of region 2. A plurality of parallel grooves or trenches 3, which are each about 35 micrometers deep and about 5 micrometers wide, and spaced apart by about 5 micrometers are then etched into the upper surface of the silicon, through P base 13 and into the N epi body 2.
The side walls and bottoms of each of trenches 3 are doped P type, by any suitable process, and are shown as P layer 4 which lines each groove 3. P regions 4 electrically contact P base 13 while the mesa shaped region of epi 2 between the trenches 3 remains of the N type. The doses in N" epi layer 2 and P region 4 can be varied, or tailored, to obtain desired switching characteristics. The trenches 3 are then filled with a dielectric material 6, which may be a single dielectric or a combination of two or more dielectric media as later described in Figure 3.
Shallow trenches such as trench 12 are then etched through P base layer 13, and into region 2, between pairs of trenches 4. A gate oxide 7 is then grown over and lines the interior of trenches 12, and a conductor material 8, for example, conductive poly silicon, fills the trenches 12, forming the gate electrode of the final device. The conductivity of region 13 adjoining gate insulation 7 can now be conventionally modulated by the application of bias voltage to gate electrode 8.
High dose, low energy implants of a suitable N type species are then applied to the top surface of the device to form shallow, high concentration and low resistivity N " source regions 9.
Shallow trenches 9a are then etched through source regions 9 and into the P base on opposite sides of gate 8, and a source contact metal 11 is applied to the device surface, making contact to N+ sources 9 and P bases 13. Note that an insulation oxide 15 insulates gate 8 from source 11.
In making the device of Figure 1, any desired topology such as laterally elongated parallel stripes or a cellular geometry such a rectangular or circular hole can be used for trenches 3.
The base 13, source regions 9, gate oxide 7 and gate 8 form together a MOSgate type structure for controlling the conduction and blocldng of the semiconductor device.
The operation of the device of Figure 1 is as follows, considering first its operation in the blocking mode: When the gate 8 is grounded with respect to the source 10 and a high relative bias applied to the drain 11, the alternate N and P regions 2 and 4 deplete out, allowing an almost uniform electric field distribution in the region between the trenches 3. The doping in, and thicknesses of the regions 2 and 4 must be carefully controlled as well known, to obtain optimal blocking performance.
Considering next operation in the conduction mode, with the application of a bias to the gate electrode 8 and the grounding of the source 9, an
N-type channel is formed on the channel surface between base 13 and gate oxide 7. The device can now conduct current and the application of a small bias to the drain will cause a current to flow in the device with ultra low RDSON-
The use of deep trenches 3 to form the P-type regions 4 allows the use of lower resistivity N-type drift conduction regions 2 than would be allowed by conventional devices. Further, the use of vertical trenches as opposed to successive horizontal epitaxial layers as in the prior art allows higher device density (by a factor of at least 30-40%) and further reduces the conduction losses in the device.
Referring next to the embodiment of Figure 2, similar numerals to those of Figure 1 identify similar elements. The embodiment of Figure 2 differs from that of Figure 1 in that the interior of trenches 3 is filled with a semi- insulating polysilicon (SIPOS) body 20 instead of the dielectric filler of Figure 1. The tops 25 of the SIPOS body 20 are connected to sources 9 and its bottom is connected to the N type epi layer 2. Note that the bottoms of trenches 3 in Figure 2 are not covered with insulation as in Figure 1.
As a result, the SIPOS bodies provide a highly resistive leakage current path between source 9 and drain (2/1/11), forcing a uniform potential distribution along the length of the trenches 3, thus reinforcing the RESURF effect of the trench sidewall doping. That is, during blocking, when the gate 8 is grounded with respect to the source 10 and a high relative bias applied to the drain 11, the regions 5 and 4 deplete out allowing an almost uniform electric field distribution in the region between the trenches 3. The doping in the regions 4 and 5 must be carefully controlled to obtain optimal blocking performance. The highly resistive leakage path between source 10 and drain 11 through the SIPOS film 20 reinforces this almost uniform electric field distribution due to the resistive potential distribution along the SIPOS. Further, use of the SIPOS reinforces the RESURF effect of the P-type sidewalls and reduces the effect of variations in the P-type sidewall does and epi resistivity. The SIPOS film 20 however does not affect operation in the forward conduction mode.
Referring next to Figure 3, there is shown a novel filler for the trench of Figure 1 which prevents the "fanning-out" effect which sometimes occurs when filling parallel spaced trenches with an oxide filler. Numerals identical to those of Figures 1 and 2 identify identical elements in Figure 3. The fan phenomenon is caused when hot oxide is grown or deposited into deep trenches in any silicon trench-type device. Thus, when - 6 -
cooling, the oxide does not shrink as much as the silicon so that, when cool, the oxide tends to spread apart the trench. This effect is magnified in a product having many parallel trenches, all filled at the same time, causing the silicon to warp and sometimes fracture. In accordance with the invention, and in the step following the formation of P diffusion 4, the trench 3 is first partly filled, along its height, with an initial thin oxide liner 30. The remainder of the trench 3 is then filled with nitride (Si3O4) 31 which has a temperature coefficient of expansion which is greater than that of both silicon and oxide. Consequently, upon cooling, the total lateral dimension change of the oxide and nitride layers 30 and 31 is more closely matched to that of the silicon 2 to avoid or reduce stress on the silicon 2.
While oxide and nitride are described, other insulation materials may be selected, and may be applied in a reversed sequence. Further, a plurality of interleaved pairs of diverse insulation layers can be used. Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.

Claims

What Is Claimed is:
1. A high voltage vertical conduction supequnction semiconductor device comprising: a body of one conductivity type; a plurality of spaced vertical trenches formed into the upper surface of said body; a diffusion of the other conductivity type formed into the interior surface of said plurality of said trenches; a MOSgated structure connected to the top of said body and to the top of each of said diffusions; the thickness and concentration of said diffusion and the width and concentration of said body being matched to insure substantially full depletion of said diffusion and body when blocking voltage is applied to said body.
2. The device of claim 1 , wherein the interiors of each of each of said trenches is filled with a dielectric material.
3. The device of claims 1 or 2, wherein said MOSgated structure comprises a base of the other conductivity type extending across the top of said body, a plurality of spaced source regions of the one conductivity type diffused into said base, a plurality of second trenches in the top of said base and between respective pairs of said trenches, a gate oxide lining the interior of said second trenches and a conductive polysilicon gate filling the interior of said second trenches; and a source contact formed on the top surface of said device and in contact with said base and with said source regions.
4. The device of claims 1 or 2, wherein said dielectric is silicon dioxide.
5. The device of claim 4, wherein each of said trenches are laterally elongated parallel trenches.
6. The device of claim 5, wherein each of said trenches has a closed cellular topology.
7. The device of claim 2, wherein said dielectric is a highly resistive material which is connected to a source electrode at its top and said drain structure at its bottom and carries an intentional leakage current under blocking conditions to force a uniform electric field distribution along the length of said trench during a blocking condition.
8. The device of claim 2, wherein said dielectric is a semi- insulating polysilicon.
9. The device of claim 2, wherein said dielectric material consists of alternate vertical layers of at least a first and second dielectric of diverse thermal expansion characteristics which, together, match the expansion characteristics of silicon.
10. In a semiconductor device containing at least one trench formed in the upper surface of a monocrystaline wafer; a dielectric filler for filling the interior of said trench; wherein said dielectric material consists of alternate vertical layers of first and second dielectrics of diverse thermal expansion characteristics which, together, match the expansion characteristics of silicon.
11. The device of claim 10, wherein said device contains a plurality of parallel trenches; each of said trenches being filled by said dielectric filler. - 9 -
12. The device of claim 9, 10 or 11, wherein said first and second dielectrics are silicon dioxide and silicon nitride respectively.
PCT/US2001/047275 2000-12-07 2001-12-03 High voltage vertical conduction superjunction semiconductor device WO2002047171A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002228895A AU2002228895A1 (en) 2000-12-07 2001-12-03 High voltage vertical conduction superjunction semiconductor device
DE10196990T DE10196990T1 (en) 2000-12-07 2001-12-03 High voltage superjunction semiconductor device with vertical power line

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/732,401 US6608350B2 (en) 2000-12-07 2000-12-07 High voltage vertical conduction superjunction semiconductor device
US09/732,401 2000-12-07

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US20020070418A1 (en) 2002-06-13
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US6608350B2 (en) 2003-08-19
JP3779605B2 (en) 2006-05-31
DE10196990T1 (en) 2003-10-23

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