WO2002049395A3 - Rapid thermal processing lamp and method for manufacturing the same - Google Patents

Rapid thermal processing lamp and method for manufacturing the same Download PDF

Info

Publication number
WO2002049395A3
WO2002049395A3 PCT/US2001/044708 US0144708W WO0249395A3 WO 2002049395 A3 WO2002049395 A3 WO 2002049395A3 US 0144708 W US0144708 W US 0144708W WO 0249395 A3 WO0249395 A3 WO 0249395A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermal processing
manufacturing
same
rapid thermal
filament
Prior art date
Application number
PCT/US2001/044708
Other languages
French (fr)
Other versions
WO2002049395A2 (en
Inventor
Wayne L Johnson
Original Assignee
Tokyo Electron Ltd
Wayne L Johnson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Wayne L Johnson filed Critical Tokyo Electron Ltd
Priority to AU2002239386A priority Critical patent/AU2002239386A1/en
Priority to US10/450,154 priority patent/US7285758B2/en
Publication of WO2002049395A2 publication Critical patent/WO2002049395A2/en
Publication of WO2002049395A3 publication Critical patent/WO2002049395A3/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/10Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any preceding group
    • F27B17/0016Chamber type furnaces
    • F27B17/0025Especially adapted for treating semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/0033Heating devices using lamps
    • H05B3/0038Heating devices using lamps for industrial applications
    • H05B3/0047Heating devices using lamps for industrial applications for semiconductor manufacture

Abstract

A method and system for inductively coupling energy to a heating filament (7A', 7B', 7C', 7A, 7B, 7C) in a thermal processing environment. By applying AC power to a coil antenna (11) and inductive coupling to a filament (e.g., a halogen lamp filament), a number of connections that are subject to fatigue is reduced, thereby increasing the reliability of the heater (2A, 2B). Such an environment can be used to process semiconductor wafers (3) and liquid crystal displays.
PCT/US2001/044708 2000-12-12 2001-12-12 Rapid thermal processing lamp and method for manufacturing the same WO2002049395A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002239386A AU2002239386A1 (en) 2000-12-12 2001-12-12 Rapid thermal processing lamp and method for manufacturing the same
US10/450,154 US7285758B2 (en) 2000-12-12 2001-12-12 Rapid thermal processing lamp and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25457300P 2000-12-12 2000-12-12
US60/254,573 2000-12-12

Publications (2)

Publication Number Publication Date
WO2002049395A2 WO2002049395A2 (en) 2002-06-20
WO2002049395A3 true WO2002049395A3 (en) 2003-01-23

Family

ID=22964803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/044708 WO2002049395A2 (en) 2000-12-12 2001-12-12 Rapid thermal processing lamp and method for manufacturing the same

Country Status (3)

Country Link
US (1) US7285758B2 (en)
AU (1) AU2002239386A1 (en)
WO (1) WO2002049395A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4431881B2 (en) 2004-08-25 2010-03-17 ウシオ電機株式会社 Excimer lamp lighting device
US20070251243A1 (en) * 2004-09-13 2007-11-01 Geary John M Thermally stabilized sensors for cooled electrical packages
FR2887739B1 (en) * 2005-06-22 2007-08-31 Roctool Soc Par Actions Simpli INDUCTION HEATING DEVICE AND METHOD FOR MANUFACTURING PARTS USING SUCH A DEVICE
US20080092819A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Substrate support structure with rapid temperature change
US20080105201A1 (en) * 2006-11-03 2008-05-08 Applied Materials, Inc. Substrate support components having quartz contact tips
US7932665B2 (en) * 2008-12-02 2011-04-26 Osram Sylvania Inc. Dual filament lamp for rapid temperature processing
TWM392431U (en) * 2010-02-04 2010-11-11 Epistar Corp Systems for epitaxial growth
CN101775727A (en) * 2010-03-01 2010-07-14 江苏俊峰纺织机械有限公司 Natural luster finishing machine roller for electromagnetic and resistance heating by using power current
KR20120051194A (en) * 2010-11-12 2012-05-22 삼성전자주식회사 Flip chip bonding apparatus and manufacturing method thereof
CN102485935B (en) * 2010-12-06 2013-11-13 北京北方微电子基地设备工艺研究中心有限责任公司 Vapor chamber and substrate processing equipment applied with the vapor chamber
JP2012151433A (en) * 2010-12-28 2012-08-09 Tokyo Electron Ltd Thermal treatment apparatus
JP6151080B2 (en) * 2013-04-26 2017-06-21 株式会社ニューフレアテクノロジー Charged particle beam lithography system
DE102014106907A1 (en) * 2014-05-16 2015-11-19 Robert Bosch Automotive Steering Gmbh Movable induction unit for heat treatment of a workpiece
KR101605717B1 (en) * 2014-07-16 2016-03-23 세메스 주식회사 Apparatus and method for treating substrate
JP7191504B2 (en) * 2017-07-14 2022-12-19 株式会社Screenホールディングス Heat treatment equipment
JP2019021828A (en) * 2017-07-20 2019-02-07 株式会社Screenホールディングス Thermal treatment apparatus
US20220322492A1 (en) * 2021-04-06 2022-10-06 Applied Materials, Inc. Epitaxial deposition chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294778A (en) * 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US5905343A (en) * 1995-10-10 1999-05-18 Mccamant; Angus J. Inductively coupled incandescent light bulb

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535481A (en) * 1969-03-24 1970-10-20 Plastics Eng Co High frequency induction heating of semiconductive plastics
US3699298A (en) * 1971-12-23 1972-10-17 Western Electric Co Methods and apparatus for heating and/or coating articles
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
JP2525348B2 (en) * 1984-02-09 1996-08-21 富士通株式会社 Vapor growth method and apparatus
GB8811893D0 (en) * 1988-05-19 1988-06-22 Secr Defence Heating of thin filaments
US4983804A (en) * 1989-12-21 1991-01-08 At&T Bell Laboratories Localized soldering by inductive heating
US5410132A (en) * 1991-10-15 1995-04-25 The Boeing Company Superplastic forming using induction heating
US6232585B1 (en) * 1998-05-19 2001-05-15 Thermal Solutions, Inc. Temperature self-regulating food delivery system
JP2000242108A (en) * 1999-02-19 2000-09-08 Fuji Xerox Co Ltd Heating belt and image recorder using the same
US6731071B2 (en) * 1999-06-21 2004-05-04 Access Business Group International Llc Inductively powered lamp assembly

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294778A (en) * 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5905343A (en) * 1995-10-10 1999-05-18 Mccamant; Angus J. Inductively coupled incandescent light bulb
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber

Also Published As

Publication number Publication date
AU2002239386A1 (en) 2002-06-24
US20040099651A1 (en) 2004-05-27
WO2002049395A2 (en) 2002-06-20
US7285758B2 (en) 2007-10-23

Similar Documents

Publication Publication Date Title
WO2002049395A3 (en) Rapid thermal processing lamp and method for manufacturing the same
WO2002009171A1 (en) Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
EP1209251A3 (en) Temperature control system for wafer
WO2002071446A3 (en) Method and apparatus for active temperature control of susceptors
WO2004095531A3 (en) Method and system for temperature control of a substrate
Tong et al. Thickness considerations in direct silicon wafer bonding
EP1075015A3 (en) A method and apparatus for thermal control of a semiconductor substrate
JP2003318182A (en) Device for heating and processing semiconductor film at low temperature
CN101669191A (en) The microwave hybrid of semiconductor wafers and plasma rapid thermal treatment
CA2453052A1 (en) High frequency dielectric heating system
EP1249858A3 (en) Heater member for mounting heating object and substrate processing apparatus using the same
CN101856664B (en) Device and method for nondestructively recycling chips
AU2002368438A1 (en) Susceptor system________________________
EP1313139A4 (en) Device and method for forming bump
AU2045397A (en) Method for forming a socket on a pipe of biaxially oriented polyvinyl chloride
TW369696B (en) High throughput optical curing process for semiconductor device
WO2002063404A3 (en) Multi-channel temperature control system for semiconductor processing facilities
EP1591719A4 (en) Superheated steam producing device
Watt et al. Low temperature direct bonding of non-hydrophilic surfaces
CN101267013B (en) Press welding structure for semiconductor extension slice
CN101267012A (en) Press welding method for semiconductor extension film
US4433006A (en) Process for oxidizing semiconducting compounds, especially gallium arsenide
Chen et al. Selective induction heating for microsystem packaging
CN209691732U (en) A kind of circulating type heating cylinder based on semiconductor chip processing
JP3243495U (en) Composite high-speed annealing equipment

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWE Wipo information: entry into national phase

Ref document number: 10450154

Country of ref document: US

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP