WO2002051743A3 - Thin silicon micromachined structures - Google Patents
Thin silicon micromachined structures Download PDFInfo
- Publication number
- WO2002051743A3 WO2002051743A3 PCT/US2001/050464 US0150464W WO02051743A3 WO 2002051743 A3 WO2002051743 A3 WO 2002051743A3 US 0150464 W US0150464 W US 0150464W WO 02051743 A3 WO02051743 A3 WO 02051743A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- recesses
- silicon wafer
- glass
- silicon
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002232866A AU2002232866A1 (en) | 2000-12-27 | 2001-12-20 | Thin silicon micromachined structures |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/749,171 | 2000-12-27 | ||
US09/749,171 US6808956B2 (en) | 2000-12-27 | 2000-12-27 | Thin micromachined structures |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002051743A2 WO2002051743A2 (en) | 2002-07-04 |
WO2002051743A3 true WO2002051743A3 (en) | 2003-05-22 |
Family
ID=25012580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/050464 WO2002051743A2 (en) | 2000-12-27 | 2001-12-20 | Thin silicon micromachined structures |
Country Status (4)
Country | Link |
---|---|
US (1) | US6808956B2 (en) |
AU (1) | AU2002232866A1 (en) |
TW (1) | TW524770B (en) |
WO (1) | WO2002051743A2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7054052B2 (en) * | 2003-09-04 | 2006-05-30 | Frank Niklaus | Adhesive sacrificial bonding of spatial light modulators |
KR100501723B1 (en) * | 2003-12-17 | 2005-07-18 | 삼성전자주식회사 | METHOD FOR FABRICATING GYROSCOPE USING Si-METAL-Si WAFER AND GYROSCOPE FABRICATED BY THE METHOD |
US7109066B2 (en) * | 2004-09-22 | 2006-09-19 | Miradia Inc. | Method and device for forming spacer structures for packaging optical reflection devices |
WO2006047326A1 (en) * | 2004-10-21 | 2006-05-04 | Fujifilm Dimatix, Inc. | Sacrificial substrate for etching |
US7494598B2 (en) * | 2005-11-22 | 2009-02-24 | Honeywell International Inc. | Miniature optically transparent window |
US20080032501A1 (en) * | 2006-07-21 | 2008-02-07 | Honeywell International Inc. | Silicon on metal for mems devices |
US8187902B2 (en) | 2008-07-09 | 2012-05-29 | The Charles Stark Draper Laboratory, Inc. | High performance sensors and methods for forming the same |
WO2011072600A1 (en) * | 2009-12-18 | 2011-06-23 | 东南大学 | Manufacturing method of wafer level glass microcavity by using foaming molding |
WO2012134394A1 (en) * | 2011-03-30 | 2012-10-04 | Gautham Viswanadam | Micro-device on glass |
US8816689B2 (en) * | 2011-05-17 | 2014-08-26 | Saudi Arabian Oil Company | Apparatus and method for multi-component wellbore electric field Measurements using capacitive sensors |
CN102417155B (en) * | 2011-08-17 | 2014-03-26 | 瑞声声学科技(深圳)有限公司 | Production method of tri-axial accelerometer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5492596A (en) * | 1994-02-04 | 1996-02-20 | The Charles Stark Draper Laboratory, Inc. | Method of making a micromechanical silicon-on-glass tuning fork gyroscope |
US6008138A (en) * | 1996-03-19 | 1999-12-28 | Robert Bosch Gmbh | Process for making micromechanical structures |
DE19929776A1 (en) * | 1999-04-28 | 2000-11-09 | Mitsubishi Electric Corp | Production of a device for manufacturing semiconductors comprises forming a protective layer on a substrate, joining to a further substrate and alternately forming a film with high molecular weight and etching |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4654663A (en) | 1981-11-16 | 1987-03-31 | Piezoelectric Technology Investors, Ltd. | Angular rate sensor system |
US5343064A (en) | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
US4855544A (en) | 1988-09-01 | 1989-08-08 | Honeywell Inc. | Multiple level miniature electromechanical accelerometer switch |
US5013681A (en) | 1989-09-29 | 1991-05-07 | The United States Of America As Represented By The Secretary Of The Navy | Method of producing a thin silicon-on-insulator layer |
US5605598A (en) | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
GB9111316D0 (en) | 1991-05-24 | 1991-07-17 | Burdess James S | Improvements in or relating to gyroscopic devices |
US5313835A (en) | 1991-12-19 | 1994-05-24 | Motorola, Inc. | Integrated monolithic gyroscopes/accelerometers with logic circuits |
US5329815A (en) | 1991-12-19 | 1994-07-19 | Motorola, Inc. | Vibration monolithic gyroscope |
DE4331798B4 (en) | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Process for the production of micromechanical components |
US5413955A (en) * | 1993-12-21 | 1995-05-09 | Delco Electronics Corporation | Method of bonding silicon wafers at temperatures below 500 degrees centigrade for sensor applications |
US5729038A (en) | 1995-12-15 | 1998-03-17 | Harris Corporation | Silicon-glass bonded wafers |
US5646348A (en) | 1994-08-29 | 1997-07-08 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode and fabrication technique therefor |
US5578843A (en) * | 1994-10-06 | 1996-11-26 | Kavlico Corporation | Semiconductor sensor with a fusion bonded flexible structure |
US5880368A (en) | 1995-04-19 | 1999-03-09 | Smiths Industries Public Limited Company | Inertial sensors |
KR100374803B1 (en) | 1995-05-25 | 2003-05-12 | 삼성전자주식회사 | Tuning fork type gyroscope |
EP0774681B1 (en) * | 1995-06-05 | 2007-12-05 | Nihon Shingo Kabushiki Kaisha | Electromagnetic actuator |
US5635640A (en) | 1995-06-06 | 1997-06-03 | Analog Devices, Inc. | Micromachined device with rotationally vibrated masses |
US5999306A (en) * | 1995-12-01 | 1999-12-07 | Seiko Epson Corporation | Method of manufacturing spatial light modulator and electronic device employing it |
US5817942A (en) | 1996-02-28 | 1998-10-06 | The Charles Stark Draper Laboratory, Inc. | Capacitive in-plane accelerometer |
US5992233A (en) | 1996-05-31 | 1999-11-30 | The Regents Of The University Of California | Micromachined Z-axis vibratory rate gyroscope |
US5894090A (en) | 1996-05-31 | 1999-04-13 | California Institute Of Technology | Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same |
US5866469A (en) | 1996-06-13 | 1999-02-02 | Boeing North American, Inc. | Method of anodic wafer bonding |
JP3777661B2 (en) * | 1996-07-10 | 2006-05-24 | 株式会社明電舎 | Filtration disorder microorganism monitoring device |
US5914801A (en) | 1996-09-27 | 1999-06-22 | Mcnc | Microelectromechanical devices including rotating plates and related methods |
GB2320571B (en) | 1996-12-20 | 2000-09-27 | Aisin Seiki | Semiconductor micromachine and manufacturing method thereof |
JPH10185580A (en) | 1996-12-27 | 1998-07-14 | Canon Inc | Gyro sensor |
JPH112526A (en) | 1997-06-13 | 1999-01-06 | Mitsubishi Electric Corp | Vibrating angular velocity sensor |
EP1023607A2 (en) | 1997-10-14 | 2000-08-02 | Irvine Sensors Corporation | Multi-element micro gyro |
FR2770899B1 (en) | 1997-11-07 | 1999-12-10 | Commissariat Energie Atomique | VIBRATING MICROGYROMETER |
JP3500063B2 (en) | 1998-04-23 | 2004-02-23 | 信越半導体株式会社 | Method for recycling peeled wafer and silicon wafer for reuse |
US6150681A (en) * | 1998-07-24 | 2000-11-21 | Silicon Microstructures, Inc. | Monolithic flow sensor and pressure sensor |
JP2000124092A (en) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | Manufacture of soi wafer by hydrogen-ion implantation stripping method and soi wafer manufactured thereby |
KR100316774B1 (en) * | 1999-01-15 | 2001-12-12 | 이형도 | Method for fabricating a micro inertia sensor |
US6277666B1 (en) | 1999-06-24 | 2001-08-21 | Honeywell Inc. | Precisely defined microelectromechanical structures and associated fabrication methods |
-
2000
- 2000-12-27 US US09/749,171 patent/US6808956B2/en not_active Expired - Lifetime
-
2001
- 2001-12-20 WO PCT/US2001/050464 patent/WO2002051743A2/en not_active Application Discontinuation
- 2001-12-20 AU AU2002232866A patent/AU2002232866A1/en not_active Abandoned
- 2001-12-21 TW TW090131853A patent/TW524770B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5492596A (en) * | 1994-02-04 | 1996-02-20 | The Charles Stark Draper Laboratory, Inc. | Method of making a micromechanical silicon-on-glass tuning fork gyroscope |
US6008138A (en) * | 1996-03-19 | 1999-12-28 | Robert Bosch Gmbh | Process for making micromechanical structures |
DE19929776A1 (en) * | 1999-04-28 | 2000-11-09 | Mitsubishi Electric Corp | Production of a device for manufacturing semiconductors comprises forming a protective layer on a substrate, joining to a further substrate and alternately forming a film with high molecular weight and etching |
Non-Patent Citations (2)
Title |
---|
MOCHIDA Y ET AL: "A micromachined vibrating rate gyroscope with independent beams for the drive and detection modes", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 80, no. 2, March 2000 (2000-03-01), pages 170 - 178, XP004192104, ISSN: 0924-4247 * |
XIAO Z ET AL: "Silicon micro-accelerometer with mg resolution, high linearity and large frequency bandwidth fabricated with two mask bulk process", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 77, no. 2, 12 October 1999 (1999-10-12), pages 113 - 119, XP004244553, ISSN: 0924-4247 * |
Also Published As
Publication number | Publication date |
---|---|
US20020081765A1 (en) | 2002-06-27 |
AU2002232866A1 (en) | 2002-07-08 |
WO2002051743A2 (en) | 2002-07-04 |
US6808956B2 (en) | 2004-10-26 |
TW524770B (en) | 2003-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002057180A3 (en) | Soi/glass process for forming thin silicon micromachined structures | |
CA2433738A1 (en) | Method for microfabricating structures using silicon-on-insulator material | |
HK1072497A1 (en) | Method for forming a cavity structure on soil substrate | |
WO2000016041A3 (en) | Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer | |
WO2002084707A3 (en) | Method of etching shaped cavities and associated on-chip devices and micro-machined structures | |
JP2006516368A5 (en) | ||
WO2003015143A1 (en) | Group iii nitride semiconductor film and its production method | |
CA2233115A1 (en) | Semiconductor substrate and method of manufacturing the same | |
EP0779650A3 (en) | Fabrication process of SOI substrate | |
EP1419990A3 (en) | Method of forming a via hole through a glass wafer | |
WO2002051743A3 (en) | Thin silicon micromachined structures | |
WO2000001010A3 (en) | Method for producing semiconductor components | |
MY138875A (en) | Three-axis accelerometer | |
JP4081868B2 (en) | Manufacturing method of micro device | |
JP3178123B2 (en) | Method of manufacturing comb-type actuator | |
JP2019098516A (en) | Method for forming hermetic seals in mems devices | |
TW201604993A (en) | Etching method of high aspect-ratio structure and manufacturing method of MEMS devices | |
CN111099555B (en) | Manufacturing method of glass cavity suitable for wafer level vacuum packaging | |
EP1170603A3 (en) | Method of fabricating silica microstructures | |
WO2004013038A3 (en) | Etch stop control for mems device formation | |
JPH11186566A (en) | Manufacture of fine device | |
RU2672033C1 (en) | Method for formation of silica areas in silicon plate | |
TW200519386A (en) | A three-axis accelerometer | |
EP1124255A3 (en) | Etching process in the fabrication of electronic devices | |
KR100530773B1 (en) | A method for forming of vacuum cavity microstructure on silicon substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |