WO2002059400A3 - Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core - Google Patents

Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core Download PDF

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Publication number
WO2002059400A3
WO2002059400A3 PCT/US2002/001782 US0201782W WO02059400A3 WO 2002059400 A3 WO2002059400 A3 WO 2002059400A3 US 0201782 W US0201782 W US 0201782W WO 02059400 A3 WO02059400 A3 WO 02059400A3
Authority
WO
WIPO (PCT)
Prior art keywords
formation
ingot
cooling rate
stacking faults
wafer
Prior art date
Application number
PCT/US2002/001782
Other languages
French (fr)
Other versions
WO2002059400A2 (en
Inventor
Chang Bum Kim
Steven L Kimbel
Jeffrey L Libbert
Mohsen Banan
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Priority to JP2002559879A priority Critical patent/JP4439810B2/en
Priority to EP02714762A priority patent/EP1356139B1/en
Priority to KR1020037009878A priority patent/KR100854186B1/en
Priority to DE60213759T priority patent/DE60213759T2/en
Publication of WO2002059400A2 publication Critical patent/WO2002059400A2/en
Publication of WO2002059400A3 publication Critical patent/WO2002059400A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Abstract

The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750 °C, in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
PCT/US2002/001782 2001-01-26 2002-01-22 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core WO2002059400A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002559879A JP4439810B2 (en) 2001-01-26 2002-01-22 Low defect density silicon with vacancy-dominated cores substantially free of oxidation-induced stacking faults
EP02714762A EP1356139B1 (en) 2001-01-26 2002-01-22 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
KR1020037009878A KR100854186B1 (en) 2001-01-26 2002-01-22 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
DE60213759T DE60213759T2 (en) 2001-01-26 2002-01-22 SILICON WITH LOW DEFECT DENSITY AND EMPTY-DOMINANTED CORE THAT IS ESSENTIALLY FREE FROM OXIDATION-INDUCED STACKING ERRORS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26441501P 2001-01-26 2001-01-26
US60/264,415 2001-01-26

Publications (2)

Publication Number Publication Date
WO2002059400A2 WO2002059400A2 (en) 2002-08-01
WO2002059400A3 true WO2002059400A3 (en) 2002-11-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/001782 WO2002059400A2 (en) 2001-01-26 2002-01-22 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core

Country Status (8)

Country Link
US (2) US6846539B2 (en)
EP (3) EP2295619B1 (en)
JP (2) JP4439810B2 (en)
KR (2) KR100854186B1 (en)
CN (2) CN101230482A (en)
DE (1) DE60213759T2 (en)
TW (1) TWI222666B (en)
WO (1) WO2002059400A2 (en)

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