WO2002061759A3 - Flash memory device and method of erasing - Google Patents
Flash memory device and method of erasing Download PDFInfo
- Publication number
- WO2002061759A3 WO2002061759A3 PCT/US2002/002567 US0202567W WO02061759A3 WO 2002061759 A3 WO2002061759 A3 WO 2002061759A3 US 0202567 W US0202567 W US 0202567W WO 02061759 A3 WO02061759 A3 WO 02061759A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- block
- erase
- cells
- convergence
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/772,667 US6563741B2 (en) | 2001-01-30 | 2001-01-30 | Flash memory device and method of erasing |
US09/772,667 | 2001-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002061759A2 WO2002061759A2 (en) | 2002-08-08 |
WO2002061759A3 true WO2002061759A3 (en) | 2004-04-01 |
Family
ID=25095809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/002567 WO2002061759A2 (en) | 2001-01-30 | 2002-01-30 | Flash memory device and method of erasing |
Country Status (2)
Country | Link |
---|---|
US (2) | US6563741B2 (en) |
WO (1) | WO2002061759A2 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990088517A (en) * | 1998-05-22 | 1999-12-27 | 마 유에 예일 | A nonvolatile memory cell structure and method for operating nonvolatile memory cells |
EP1757263B1 (en) * | 1999-06-24 | 2009-09-23 | Shin-Etsu Chemical Co., Ltd. | Dermatic cosmetic material |
TW519734B (en) * | 2001-12-04 | 2003-02-01 | Macronix Int Co Ltd | Programming and erasing methods of non-volatile memory having nitride tunneling layer |
US6795348B2 (en) * | 2002-05-29 | 2004-09-21 | Micron Technology, Inc. | Method and apparatus for erasing flash memory |
US7043274B2 (en) * | 2002-06-28 | 2006-05-09 | Interdigital Technology Corporation | System for efficiently providing coverage of a sectorized cell for common and dedicated channels utilizing beam forming and sweeping |
US6649453B1 (en) * | 2002-08-29 | 2003-11-18 | Micron Technology, Inc. | Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation |
US6798694B2 (en) * | 2002-08-29 | 2004-09-28 | Micron Technology, Inc. | Method for reducing drain disturb in programming |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6903361B2 (en) * | 2003-09-17 | 2005-06-07 | Micron Technology, Inc. | Non-volatile memory structure |
US6975538B2 (en) * | 2003-10-08 | 2005-12-13 | Micron Technology, Inc. | Memory block erasing in a flash memory device |
TWI247311B (en) * | 2004-03-25 | 2006-01-11 | Elite Semiconductor Esmt | Circuit and method for preventing nonvolatile memory from over erasure |
US7652930B2 (en) * | 2004-04-01 | 2010-01-26 | Saifun Semiconductors Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
US20060044899A1 (en) * | 2004-08-27 | 2006-03-02 | Ellis Robert W | Method and apparatus for destroying flash memory |
US7251164B2 (en) * | 2004-11-10 | 2007-07-31 | Innovative Silicon S.A. | Circuitry for and method of improving statistical distribution of integrated circuits |
EP1684307A1 (en) * | 2005-01-19 | 2006-07-26 | Saifun Semiconductors Ltd. | Method, circuit and systems for erasing one or more non-volatile memory cells |
US7345918B2 (en) | 2005-08-31 | 2008-03-18 | Micron Technology, Inc. | Selective threshold voltage verification and compaction |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7768835B2 (en) * | 2006-08-09 | 2010-08-03 | Micron Technology, Inc. | Non-volatile memory erase verify |
US7701780B2 (en) | 2007-05-31 | 2010-04-20 | Micron Technology, Inc. | Non-volatile memory cell healing |
US7986553B2 (en) * | 2007-06-15 | 2011-07-26 | Micron Technology, Inc. | Programming of a solid state memory utilizing analog communication of bit patterns |
US7619931B2 (en) * | 2007-06-26 | 2009-11-17 | Micron Technology, Inc. | Program-verify method with different read and verify pass-through voltages |
US20090003065A1 (en) * | 2007-06-26 | 2009-01-01 | Micron Technology, Inc. | Flash cell with improved program disturb |
US7532027B2 (en) * | 2007-09-28 | 2009-05-12 | Adtron, Inc. | Deliberate destruction of integrated circuits |
US7916543B2 (en) * | 2007-10-22 | 2011-03-29 | Micron Technology, Inc. | Memory cell operation |
US7924623B2 (en) | 2008-05-27 | 2011-04-12 | Micron Technology, Inc. | Method for memory cell erasure with a programming monitor of reference cells |
US8064267B2 (en) | 2008-11-14 | 2011-11-22 | Micron Technology, Inc. | Erase voltage reduction in a non-volatile memory device |
TWI419166B (en) * | 2010-01-08 | 2013-12-11 | Yield Microelectronics Corp | Low - pressure rapid erasure of nonvolatile memory |
US8797802B2 (en) * | 2012-03-15 | 2014-08-05 | Macronix International Co., Ltd. | Method and apparatus for shortened erase operation |
US9082490B2 (en) * | 2013-06-18 | 2015-07-14 | Flashsilicon Incorporation | Ultra-low power programming method for N-channel semiconductor non-volatile memory |
TWI514393B (en) * | 2013-08-07 | 2015-12-21 | Winbond Electronics Corp | Non-volatile memory system and method for biasing non-volatile memory |
US9728278B2 (en) | 2014-10-24 | 2017-08-08 | Micron Technology, Inc. | Threshold voltage margin analysis |
CN113906508A (en) | 2019-05-31 | 2022-01-07 | 美光科技公司 | Method for checking an erase phase of a memory device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5615147A (en) * | 1994-03-03 | 1997-03-25 | Rohm Corporation | Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase |
US5742541A (en) * | 1995-03-24 | 1998-04-21 | Sharp Kabushiki Kaisha | Writing method for nonvolatile semiconductor memory with soft-write repair for over-erased cells |
US5912845A (en) * | 1997-09-10 | 1999-06-15 | Macronix International Co., Ltd. | Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage |
US6172909B1 (en) * | 1999-08-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Ramped gate technique for soft programming to tighten the Vt distribution |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2707970B2 (en) * | 1994-04-11 | 1998-02-04 | 日本電気株式会社 | Erase method for nonvolatile semiconductor memory device |
US5490109A (en) * | 1994-06-28 | 1996-02-06 | Intel Corporation | Method and apparatus for preventing over-erasure of flash EEPROM memory devices |
US5576991A (en) * | 1994-07-01 | 1996-11-19 | Advanced Micro Devices, Inc. | Multistepped threshold convergence for a flash memory array |
US5933847A (en) | 1995-09-28 | 1999-08-03 | Canon Kabushiki Kaisha | Selecting erase method based on type of power supply for flash EEPROM |
US5856944A (en) | 1995-11-13 | 1999-01-05 | Alliance Semiconductor Corporation | Self-converging over-erase repair method for flash EPROM |
JP2982676B2 (en) * | 1995-12-08 | 1999-11-29 | 日本電気株式会社 | Over-erase relief method for nonvolatile semiconductor memory device |
US5675537A (en) | 1996-08-22 | 1997-10-07 | Advanced Micro Devices, Inc. | Erase method for page mode multiple bits-per-cell flash EEPROM |
US6097632A (en) | 1997-04-18 | 2000-08-01 | Micron Technology, Inc. | Source regulation circuit for an erase operation of flash memory |
US5862078A (en) | 1997-08-11 | 1999-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mixed mode erase method to improve flash eeprom write/erase threshold closure |
US5838618A (en) | 1997-09-11 | 1998-11-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure |
US5903499A (en) | 1997-09-12 | 1999-05-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase |
US6055183A (en) | 1997-10-24 | 2000-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Erase method of flash EEPROM by using snapback characteristic |
US5963477A (en) * | 1997-12-09 | 1999-10-05 | Macronix International Co., Ltd. | Flash EPROM erase algorithm with wordline level retry |
WO1999031669A1 (en) | 1997-12-18 | 1999-06-24 | Advanced Micro Devices, Inc. | Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices |
US6023426A (en) | 1998-03-09 | 2000-02-08 | Eon Silicon Devices, Inc. | Method of achieving narrow VT distribution after erase in flash EEPROM |
US6043530A (en) | 1998-04-15 | 2000-03-28 | Chang; Ming-Bing | Flash EEPROM device employing polysilicon sidewall spacer as an erase gate |
US6005809A (en) | 1998-06-19 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Program and erase method for a split gate flash EEPROM |
US6052310A (en) | 1998-08-12 | 2000-04-18 | Advanced Micro Devices | Method for tightening erase threshold voltage distribution in flash electrically erasable programmable read-only memory (EEPROM) |
US6049484A (en) | 1998-09-10 | 2000-04-11 | Taiwan Semiconductor Manufacturing Company | Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase |
US6198662B1 (en) | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
KR100308192B1 (en) | 1999-07-28 | 2001-11-01 | 윤종용 | Flash memory devcie capable of preventing an over-erase of flash memory cells and an erasure method thereof |
US6261906B1 (en) | 1999-08-03 | 2001-07-17 | Worldwide Semiconductor Manufacturing Corp. | Method for forming a flash memory cell with improved drain erase performance |
US6172915B1 (en) | 1999-09-30 | 2001-01-09 | Eon Silicon Devices, Inc. | Unified erase method in flash EEPROM |
-
2001
- 2001-01-30 US US09/772,667 patent/US6563741B2/en not_active Expired - Lifetime
-
2002
- 2002-01-30 WO PCT/US2002/002567 patent/WO2002061759A2/en not_active Application Discontinuation
-
2003
- 2003-02-24 US US10/373,379 patent/US6798699B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5615147A (en) * | 1994-03-03 | 1997-03-25 | Rohm Corporation | Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase |
US5742541A (en) * | 1995-03-24 | 1998-04-21 | Sharp Kabushiki Kaisha | Writing method for nonvolatile semiconductor memory with soft-write repair for over-erased cells |
US5912845A (en) * | 1997-09-10 | 1999-06-15 | Macronix International Co., Ltd. | Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage |
US6172909B1 (en) * | 1999-08-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Ramped gate technique for soft programming to tighten the Vt distribution |
Also Published As
Publication number | Publication date |
---|---|
US6563741B2 (en) | 2003-05-13 |
US6798699B2 (en) | 2004-09-28 |
US20030128591A1 (en) | 2003-07-10 |
WO2002061759A2 (en) | 2002-08-08 |
US20020101765A1 (en) | 2002-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002061759A3 (en) | Flash memory device and method of erasing | |
US6169693B1 (en) | Self-convergence of post-erase threshold voltages in a flash memory cell using transient response | |
KR100496797B1 (en) | Program method of semiconductor memory device | |
US7821835B2 (en) | Concurrent programming of non-volatile memory | |
US7272044B2 (en) | Flash memory | |
JP5300298B2 (en) | Method of operating memory device including discharge of source / drain region and related electronic device | |
JP3284358B2 (en) | Non-volatile memory device | |
KR100290282B1 (en) | Nonvolatile Semiconductor Memory Device Reduces Program Time | |
JP3856694B2 (en) | Flash memory device and erase method thereof | |
US8467245B2 (en) | Non-volatile memory device with program current clamp and related method | |
US5576991A (en) | Multistepped threshold convergence for a flash memory array | |
US20070115729A1 (en) | Method and apparatus for reducing stress in word line driver transistors during erasure | |
WO2001075899A3 (en) | Page mode erase in a flash memory array | |
JPH09161490A (en) | Nonvolatile semiconductor memory | |
US5862078A (en) | Mixed mode erase method to improve flash eeprom write/erase threshold closure | |
US6256702B1 (en) | Nonvolatile memory device with extended storage and high reliability through writing the same data into two memory cells | |
JP2007035249A (en) | Nonvolatile memory device for controlling slope of word line voltage and its program method | |
KR100262918B1 (en) | Method and device for erasing non-volatile semiconductor memory with smaller erase variation | |
US6049484A (en) | Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase | |
US6381177B1 (en) | Method for controlled soft programming of non-volatile memory cells, in particular of the flash EEPROM and EPROM type | |
EP2498258B1 (en) | Non-volatile memory device with program current clamp and related method | |
US5949717A (en) | Method to improve flash EEPROM cell write/erase threshold voltage closure | |
JPH11273372A (en) | Flash memory cell and array having improved preprogram and erasing characteristics | |
KR100317500B1 (en) | Gate voltage control circuit for flash memory cell | |
JP2000252447A (en) | Non-volatile semiconductor storage device and data erasing method therefor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |