WO2002061808A2 - Heat treatment apparatus and wafer support ring - Google Patents
Heat treatment apparatus and wafer support ring Download PDFInfo
- Publication number
- WO2002061808A2 WO2002061808A2 PCT/JP2002/000657 JP0200657W WO02061808A2 WO 2002061808 A2 WO2002061808 A2 WO 2002061808A2 JP 0200657 W JP0200657 W JP 0200657W WO 02061808 A2 WO02061808 A2 WO 02061808A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heat treatment
- sic
- silicon wafer
- wafer
- silicon
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Abstract
A heat treatment apparatus rapidly and uniformly heats an entire surface of a silicon wafer so as to apply a heat treatment to the silicon wafer. A wafer support ring supports the silicon wafer during the heat treatment. The wafer support ring is formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis. Alternatively, the wafer support ring may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10?-7 to 10-4¿.
Description
DESCRIPTION
HEAT TREATMENT APPARATUS AND WAFER SUPPORT RING
TECHNICAL FIELD
The present invention generally relates to heat treatment apparatuses and, more particularly, to a heat treatment apparatus for applying a heat treatment to a silicon wafer and a wafer support ring used on the heat treatment apparatus.
BACKGROUND ART
Various heat treatment apparatuses, which apply heat treatment by heating a silicon wafer, have been developed. In a rapid thermal processing apparatus (RTP) for rapidly heating a silicon wafer, it is important to rapidly heat an entire surface of the silicon wafer with a uniform temperature distribution over the entire surface of the silicon wafer. In a conventional rapid thermal processing apparatus, a periphery of a silicon wafer is supported by a guard ring while the silicon wafer is subjected to the rapid heating process.
In such a structure to support the silicon wafer, a temperature difference occurs between a periphery of the silicon wafer and a part of the guard ring contacting the silicon wafer. That is, if a temperature difference occurs between a circumference part of the silicon wafer and the part of the guard ring supporting the periphery of the silicon wafer, the entire surface of the silicon wafer cannot be heat-treated uniformly.
A major cause of such a temperature difference is that the conventional guard ring is formed of silicon carbide which has twice the thermometric conductivity of
silicon. Another major cause of such a temperature difference is that a radiation energy distribution corresponding to a ratio of thermometric conductivities of the silicon wafer and the guard ring cannot be achieved on the surface of the silicon wafer.
DISCLOSURE OF INVENTION
It is a general object of the present invention • to provide an improved and useful heat treatment apparatus and a wafer support ring in which the above-mentioned problems area eliminated.
A more specific object of the present invention is to provide a heat treatment apparatus which can rapidly and uniformly heat an entire surface of a silicon wafer and a wafer support ring used in such a heat treatment apparatus .
In order to achieve the above-mentioned obj ects , there is provided according to one aspect of the present invention a heat treatment apparatus for applying a heat treatment by heating a silicon wafer, comprising a wafer support member supporting the silicon wafer during the heat treatment, the wafer support member formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis. Alternatively, the wafer support member may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10~7 to 10"4.
Additionally, there is provided according another aspect of the present invention a wafer support ring configured and arranged to support a periphery of a silicon wafer when a heat treatment is applied to the silicon wafer by heating, the wafer support ring being formed of silicon carbide having a vacancy rate of 5% to
20% on a density basis. Alternatively, the wafer support ring may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10~7 to 10~4. According to the above-mentioned heat treatment apparatus and the wafer support ring, the silicon wafer is supported by a material having thermophysical properties close to that of the silicon wafer. Thus, a temperature difference between the silicon wafer and the wafer support member can be reduced, which results in a uniform temperature over the entire silicon wafer.
Other objects, features and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is an illustration of a heat treatment apparatus according to an embodiment of the present invention; and
FIG. 2 is an illustration showing a tetrahedron crystal structure of silicon carbide.
BEST MODE FOR CARRYING OUT THE INVENTION A description will now be given, with reference to FIG. 1, of a heat treatment apparatus according the present invention. FIG. 1 is an illustration of a heat treatment apparatus according to the present invention
As shown in FIG. 1, the heat treatment apparatus according to the present invention comprises : a lamp house 1 including a plurality of halogen lamps 3; a quarts plate 5; a heat-equalizing ring 9 on which a silicon wafer 7 to be heated is placed; and a wafer support pin 10. The
heat-equalizing ring 9 correspond to a wafer support member or wafer support ring.
The halogen lamps 3 irradiate a light onto the silicon wafer 7 so as to heat the silicon wafer 7 supported by the heat equalization ring 9. The light emitted from the halogen lamps 3 transmits through the quartz late 5 toward the silicon wafer 7. The quartz plate 5 separate a process space, in which a heat treatment is applied to the silicon wafer 7 while being supplied with various gasses, and the lamp house 1, in which the halogen lamps 3 are accommodated. Additionally, the heat-equalizing ring 9 supports an outer periphery of the silicon wafer 7, and the wafer support pin 10 supports the heat-equalizing ring 9. According to the present invention, in the heat treatment apparatus having the above-mentioned structure, the above-mentioned heat-equalizing ring 9 is formed 'of silicon carbide (SiC) having thermophysical ' properties, such as thermometric conductivity, which is approximate to that of the silicon wafer 7.
Here, the thermometric conductivity α is a value obtained by dividing a thermal conductivity K by a heat capacity pc (p is a density and c is a specific heat) .
α=κ/pc
Therefore, in order to bring the thermometric conductivity of the heat-equalizing ring 9 close to the thermometric conductivity of the silicon wafer 7, there is means to vary the thermal conductivity K, the density p or the specific heat c. In addition, the thermal conductivity is determined by a sum total of contributions of carriers which serve to achieve thermal conduction
within a solid, i.e., electrons, lattice vibration (phonon) or radiation (photon) .
Generally, a propagation rate of heat into inside a matter is higher as a value of thermometric conductivity alpha is larger. That is, if the thermometric conductivity is large, this means that either the thermal conductivity K of the matter is large and an energy transportation rate is high or the heat capacity pc of the matter is small. When the heat capacity is small, a small part of heat transferring in the matter is absorbed by the matter and used for raising the temperature, and, thereby, the remaining large part of heat is transferred to a remote position.
Conventionally, in the field of development of ceramics, the lattice vibration as a carrier and a polyphase structure as a structure have attracted attention, and effort has been made mainly to increase the purity of a material. Thus, the contribution of a vacancy rate of a material to the thermometric conductivity and use of electrons as a carrier by adding an impurity to a material have not attracted attention .
In the present invention, as a result of recognizing the above-mentioned two points especially, the heat-equalizing ring 9 is formed of silicon carbide having a thermometric conductivity close to the thermometric conductivity of the silicon wafer 7. Generally, silicon carbide (SiC) consists of silicon atoms 12 and carbon atoms 13 , and has a laminated structure in which unit layers each containing arranged tetrahedrons shown in FIG. 2 are stacked. There are more than 100 polytypes in SiC according to the way of overlapping the unit layers. Moreover, as a crystal system, there are a cubic system, a hexagonal system and a rhombohedral system. Among these,
the polytypes, which are generally used as a raw-material powder for sintering or a sintered material, have a cubic system or a hexagonal system. The thermophysical properties also change according to the polytypes produced in response to a manufacturing method.
A description will now be given below of the heat-equalizing ring 9 according to the present invention in detail.
[First Embodiment]
First, the heat-equalizing ring 9 formed of cubic system SiC having a density lower than conventional SiC due to a vacancy rate of 5 - 20% is explained.
The cubic system SiC can be produced by the following manufacturing method. First, SiC is prepared in the form of ultra fine powder, which can be produced by a plasma CVD method with SiH4 and C2H6 gas. Then, the powder is sintered (hot pressed) under the condition of a pressure of 40 MPa at a temperature of 2000°C, and the sintered SiC is cleaned.
According to the above-mentioned method, SiC having a vacancy rate of about 5 - 20% according to a density conversion value can be formed. Although it is possible to increase the vacancy rate according to the manufacture technique, a mechanical strength of such SiC may be insufficient and cannot withstand machining.
The following Table 1 shows thermophysical- properties of the SiC produced by the above-mentioned method in comparison with the thermophysical properties of conventional SiC.
Table 1
* single crystal value
The conventional SiC indicated in the above- mentioned Table 1 is amorphous silicon SiC. The amorphous silicon SiC can be prepared by fully mixing the commercially available SiC powder and the above-mentioned ultra fine powder of SiC and sintering the mixture under a pressure of 40 MPa at a temperature of 2000°C, and cleaning the sintered material. The vacancy rate of Si, which constitutes the silicon (Si) wafer 7 is 0%, and the vacancy rate of the above-mentioned amorphous silicon SiC is 0.3%.
As shown in the above-mentioned Table 1 , the density of SiC (porous) according to the first embodiment is 3.0 [g/cm3], which is lower than the density 3.2 [g/cm3] of the conventional SiC. Consequently, the heat capacity per unit volume of SiC (porous) is 0.48 [cal/cm3-°C ], which is a value closer to the heat capacity 0.389
[cal/cm3-°C] of Si than the conventional SiC.
Furthermore, the thermometric conductivity of SiC (porous) , which has a reduced density by increasing the vacancy rate to 5 - 20% as mentioned above, is a value
closer to the thermometric conductivity of Si than the conventional SiC. Thereby, if the heat-equalizing ring 9 is formed by SiC (porous) , the temperature difference generated between the central part and the peripheral part of the silicon wafer 7 during a heat treatment process can be reduced. Therefore, an entire surface of the silicon wafer 7 can be heated at a uniform temperature, which results in a uniform heat treatment.
[Second Embodiment]
The heat-equalizing ring 9 according to the second embodiment of the present invention is formed of an SiC/SiC composite material having a matrix (substrate) formed of Si-C-O/SiC or SiC/Si. Here, the SiC/SiC composite material is a ceramic matrix composite material (CMC) , which is lightweight and has high strength, high rigidity, heat resistance and environment resistance.
The manufacturing process of such an SiC/SiC composite material includes a fiber process for preparing fibers in advance and a formation process for forming a matrix. In the formation process of a matrix, a precursor impregnate and baking method (PIP) , the above-mentioned hot press method (HP) or the above-mentioned reaction sintering method (RS) may be used. It should be noted that, in the precursor impregnate and baking method (PIP) , a matrix is formed in a fiber preform by repeating impregnate and baking of an inorganic polymer (precursor) . In the reaction sintering method (RS) , a matrix is formed in a short time by filling carbon powder in a fiber preform beforehand and thereafter impregnating Si into the fiber preform so as to form a matrix in a short time according to a reaction of C+Si→ SiC.
In the SiC/SiC composite material formed by the above-mentioned precursor impregnate and baking method (PIP) or the reaction sintering method (RS) , the matrix composition and crystallinity give more influence to the heat conductivity than the vacancy rate. Therefore, in order to produce the heat-equalizing ring 9 having thermophysical properties close to the silicon wafer 7, it is also useful to form the heat-equalizing ring 9 by the SiC/SiC composite material, which' uses a matrix formed of Si-C-O/SiC or SiC/Si.
[Third Embodiment]
The heat-equalizing ring 9 according to the third embodiment of the present invention is formed of SiC having a concentration of doped impurities close to an amount of doping of the silicon wafer 7. The impurities doped into SiC produce heat carrier electrons in SiC, and play a role to increase the thermal conductivity.
Thus, it is expected that the heat-equalizing ring 9 according to the present embodiment has values of thermophysical properties shown in the following Table 2.
Table 3
* single crystal value
As shown in the above Table 2 , the conventional SiC contains boron (B) as an impurity. On the other hand, the impurities (dopants) doped into the silicon wafer 7 are also doped into SiC, which constitutes the heat- equalizing ring 9 according to the present embodiment. The impurities to be doped may include phosphorous (P) , arsenic (As) , antimony (Sb) , boron (B) , indium (In) , aluminium (Al) and gallium (Ga) . The impurities are doped by a concentration ratio of 10-7 to 10-4. Accordingly, as shown in Table 2, the thermal conductivity and thermometric conductivity of the impurity-doped SiC according to the present embodiment are lower than that of the conventional SiC. Thus, SiC having thermophysical properties close to the thermal conductivity and thermometric conductivity of the doped silicon wafer 7 can be obtained.
A description will now be given below of three methods for forming the heat-equalizing ring 9 according to the present embodiment. It should be noted that the main purpose of adding an impurity to SiC is not developing a new material, but rather developing a radio frequency power device using a large band gap, saturation electron speed, dielectric withstand or thermal conductivity, which cannot be achieved by a silicon device. In the first SiC manufacturing method, only the ultra fine powder of SiC produced by a thermal plasma CVD method using SiH4 and C2H6 gas is prepared first. Then, the ultara fine powder is sintered (hot-pressed) under the condition of a pressure of 40 MPa at a temperature of 2000°C. Further, trivalent ions (for example, B+, A1+, Ga+, In+) or pentavalent ions (for example, N+, P+, As+, Sb+) are implanted into the crystal of SiC by an ion- implanter. The ions are accelerated in a vacuum and are
implanted into the single crystal SiC as impurities. Since the single crystal SiC into which the impurities are introduced is changed to amorphous, the amorphous SiC is crystallized by heat treatment. Then, finally the recrystallized. SiC is subjected to a cleaning process.
Next, a description will be given of the second method of producing SiC in which impurities are added to powders to be mixed. First, the SiC ultra fine powder produced by a thermal plasma CVD method using SiH4 and C2H6 gas and a slight amount of powder of impurities (for example, trivalent B, Al, Ga, In or pentavalent N, P, As, Sb and a compound of Si or C) are fully mixed. Then, the powder mixture is sintered (hot-pressed) under the condition of a pressure of 40 MPa at 2000°C, and the sintered SiC is cleaned.
Next, a description will be given of the third method of producing SiC in which the impurities are added by using plasma doping. First, the ultra fine powder of SiC is produced by a thermal plasma CVD method using SiH4 and C2H6 gas. Next, the ultra fine powder is sintered
(hot-pressed) under the condition of a pressure of 40 MPa at a temperature of 2000°C. Then, the thus-sintered SiC is exposed to plasma containing trivalent ions such as B+. A1+, Ga+ or In+, or pentavalent ions such as N+, p+, As+ or Sb+ so as to implant the ions into the sintered SiC. Finally, the SiC is annealed and cleaned.
The heat conductivity of SiC into which the impurities are added by the above-mentioned methods increases according to the following formulas, where K is a thermal conductivity per unit volume, Ce is a specific heat of electron carriers per unit volume, ve is a speed of the electron carrier, and le is a mean free path of an electron carrier.
K= (l/3) Ce -ve- le
As mentioned above, the heat-equalizing ring 9 according to the third embodiment of the present invention can is also be constituted by SiC having thermophysical properties close to that of the silicon wafer 7 which is an object to be heat-treated. Accordingly, the temperature difference generated between the central part and the periphery of the silicon wafer 7 during the heat treatment process can be reduced. Thus, an entire surface of the silicon wafer is uniformly heated, which results in a uniform heat treatment being applied to the silicon wafer 7.
The present invention is not limited to the specifically disclosed embodiments, and variations and modifications may be made without departing from the scope of the present invention.
Claims
1. A heat treatment apparatus for applying a heat treatment by heating a silicon wafer, comprising: a wafer support member supporting said silicon wafer during the heat treatment, the wafer support member formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis.
2. A heat treatment apparatus for applying a heat treatment by heating a silicon wafer, comprising: a wafer support member supporting said silicon wafer during the heat treatment, the wafer support member formed of a ceramics matrix composite material.
3. A heat treatment apparatus for applying a heat treatment by heating a silicon wafer, comprising: a wafer support member supporting said silicon wafer during the heat treatment, the wafer support member formed of silicon carbide containing an impurity added by a concentration ratio of 10-7 to 10"4.
4. A wafer support ring configured and arranged to support a periphery of a silicon wafer when a heat treatment is applied to the silicon wafer by heating, the wafer support ring being formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis.
5. A wafer support ring configured and arranged to support a periphery of a silicon wafer when a heat treatment is applied to the silicon wafer by heating, the wafer support ring being formed of a ceramics matrix composite material.
6. A wafer support ring configured and arranged to support a periphery of a silicon wafer when a heat treatment is applied to the silicon wafer by heating, the wafer support ring being formed of silicon carbide containing an impurity added by a concentration ratio of 10~7 to 10"4.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-022454 | 2001-01-30 | ||
| JP2001022454A JP2002231649A (en) | 2001-01-30 | 2001-01-30 | Heat-treating apparatus and wafer-supporting ring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002061808A2 true WO2002061808A2 (en) | 2002-08-08 |
| WO2002061808A3 WO2002061808A3 (en) | 2003-09-04 |
Family
ID=18887868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/000657 WO2002061808A2 (en) | 2001-01-30 | 2002-01-29 | Heat treatment apparatus and wafer support ring |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2002231649A (en) |
| TW (1) | TW559910B (en) |
| WO (1) | WO2002061808A2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005045905A1 (en) * | 2003-10-27 | 2005-05-19 | Applied Materials, Inc. | Tailored temperature uniformity |
| EP2058841A2 (en) | 2007-11-07 | 2009-05-13 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Heat transfer element and device for thermal treatment of substrates |
| DE102007054527A1 (en) * | 2007-11-07 | 2009-05-14 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | New heating blocks |
| US8536492B2 (en) | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4908765B2 (en) * | 2005-03-22 | 2012-04-04 | 光洋サーモシステム株式会社 | Heat equalizing member and heat treatment apparatus |
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| JPH11200030A (en) * | 1998-01-20 | 1999-07-27 | Sumitomo Chem Co Ltd | Backing plate for sputtering target |
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2002
- 2002-01-29 WO PCT/JP2002/000657 patent/WO2002061808A2/en active Application Filing
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005045905A1 (en) * | 2003-10-27 | 2005-05-19 | Applied Materials, Inc. | Tailored temperature uniformity |
| US7127367B2 (en) | 2003-10-27 | 2006-10-24 | Applied Materials, Inc. | Tailored temperature uniformity |
| US8536492B2 (en) | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
| EP2058841A2 (en) | 2007-11-07 | 2009-05-13 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Heat transfer element and device for thermal treatment of substrates |
| DE102007054527A1 (en) * | 2007-11-07 | 2009-05-14 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | New heating blocks |
| EP2058841A3 (en) * | 2007-11-07 | 2012-05-02 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Heat transfer element and device for thermal treatment of substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| TW559910B (en) | 2003-11-01 |
| JP2002231649A (en) | 2002-08-16 |
| WO2002061808A3 (en) | 2003-09-04 |
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