WO2002061808A3 - Heat treatment apparatus and wafer support ring - Google Patents

Heat treatment apparatus and wafer support ring Download PDF

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Publication number
WO2002061808A3
WO2002061808A3 PCT/JP2002/000657 JP0200657W WO02061808A3 WO 2002061808 A3 WO2002061808 A3 WO 2002061808A3 JP 0200657 W JP0200657 W JP 0200657W WO 02061808 A3 WO02061808 A3 WO 02061808A3
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
support ring
wafer support
treatment apparatus
wafer
Prior art date
Application number
PCT/JP2002/000657
Other languages
French (fr)
Other versions
WO2002061808A2 (en
Inventor
Masahiro Shimizu
Takeshi Sakuma
Takashi Shigeoka
Original Assignee
Tokyo Electron Ltd
Masahiro Shimizu
Takeshi Sakuma
Takashi Shigeoka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Masahiro Shimizu, Takeshi Sakuma, Takashi Shigeoka filed Critical Tokyo Electron Ltd
Publication of WO2002061808A2 publication Critical patent/WO2002061808A2/en
Publication of WO2002061808A3 publication Critical patent/WO2002061808A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Abstract

A heat treatment apparatus rapidly and uniformly heats an entire surface of a silicon wafer so as to apply a heat treatment to the silicon wafer. A wafer support ring supports the silicon wafer during the heat treatment. The wafer support ring is formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis. Alternatively, the wafer support ring may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10?-7 to 10-4¿.
PCT/JP2002/000657 2001-01-30 2002-01-29 Heat treatment apparatus and wafer support ring WO2002061808A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001022454A JP2002231649A (en) 2001-01-30 2001-01-30 Heat-treating apparatus and wafer-supporting ring
JP2001-022454 2001-01-30

Publications (2)

Publication Number Publication Date
WO2002061808A2 WO2002061808A2 (en) 2002-08-08
WO2002061808A3 true WO2002061808A3 (en) 2003-09-04

Family

ID=18887868

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000657 WO2002061808A2 (en) 2001-01-30 2002-01-29 Heat treatment apparatus and wafer support ring

Country Status (3)

Country Link
JP (1) JP2002231649A (en)
TW (1) TW559910B (en)
WO (1) WO2002061808A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8536492B2 (en) 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7127367B2 (en) 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
JP4908765B2 (en) * 2005-03-22 2012-04-04 光洋サーモシステム株式会社 Heat equalizing member and heat treatment apparatus
DE102007054526A1 (en) 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Heat transfer element and system for the thermal treatment of substrates
DE102007054527A1 (en) * 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. New heating blocks

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
JPH08181150A (en) * 1994-12-26 1996-07-12 Touyoko Kagaku Kk Heat treatment of substrate
EP0781739A1 (en) * 1995-12-26 1997-07-02 Asahi Glass Company Ltd. Jig for heat treatment and process for fabricating the jig
EP0821403A2 (en) * 1996-07-24 1998-01-28 Applied Materials, Inc. Semiconductor wafer support with graded thermal mass
JPH1171181A (en) * 1997-06-20 1999-03-16 Bridgestone Corp Member for semiconductor production unit
JPH11130540A (en) * 1997-10-31 1999-05-18 Hitachi Chem Co Ltd Silicon carbide sintered compact and its production
JPH11200030A (en) * 1998-01-20 1999-07-27 Sumitomo Chem Co Ltd Backing plate for sputtering target
JPH11343168A (en) * 1998-05-29 1999-12-14 Kyocera Corp Low thermal expansion black ceramics, its production and member for semiconductor producing apparatus
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
WO2000036635A1 (en) * 1998-12-11 2000-06-22 Steag Rtp Systems Gmbh Gas driven rotating susceptor for rapid thermal processing (rtp) system
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US6120661A (en) * 1998-06-08 2000-09-19 Sony Corporation Apparatus for processing glass substrate
US20020000547A1 (en) * 2000-05-26 2002-01-03 Nisshinbo Industries, Inc., Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same
JP2002164421A (en) * 2000-11-28 2002-06-07 Taiheiyo Cement Corp Substrate holding member

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
JPH08181150A (en) * 1994-12-26 1996-07-12 Touyoko Kagaku Kk Heat treatment of substrate
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
EP0781739A1 (en) * 1995-12-26 1997-07-02 Asahi Glass Company Ltd. Jig for heat treatment and process for fabricating the jig
EP0821403A2 (en) * 1996-07-24 1998-01-28 Applied Materials, Inc. Semiconductor wafer support with graded thermal mass
JPH1171181A (en) * 1997-06-20 1999-03-16 Bridgestone Corp Member for semiconductor production unit
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JPH11130540A (en) * 1997-10-31 1999-05-18 Hitachi Chem Co Ltd Silicon carbide sintered compact and its production
JPH11200030A (en) * 1998-01-20 1999-07-27 Sumitomo Chem Co Ltd Backing plate for sputtering target
JPH11343168A (en) * 1998-05-29 1999-12-14 Kyocera Corp Low thermal expansion black ceramics, its production and member for semiconductor producing apparatus
US6120661A (en) * 1998-06-08 2000-09-19 Sony Corporation Apparatus for processing glass substrate
WO2000036635A1 (en) * 1998-12-11 2000-06-22 Steag Rtp Systems Gmbh Gas driven rotating susceptor for rapid thermal processing (rtp) system
US20020000547A1 (en) * 2000-05-26 2002-01-03 Nisshinbo Industries, Inc., Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same
JP2002164421A (en) * 2000-11-28 2002-06-07 Taiheiyo Cement Corp Substrate holding member

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 11 29 November 1996 (1996-11-29) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 08 30 June 1999 (1999-06-30) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10 31 August 1999 (1999-08-31) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 10 10 October 2002 (2002-10-10) *

Also Published As

Publication number Publication date
TW559910B (en) 2003-11-01
WO2002061808A2 (en) 2002-08-08
JP2002231649A (en) 2002-08-16

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