Búsqueda Imágenes Maps Play YouTube Noticias Gmail Drive Más »
Iniciar sesión
Usuarios de lectores de pantalla: deben hacer clic en este enlace para utilizar el modo de accesibilidad. Este modo tiene las mismas funciones esenciales pero funciona mejor con el lector.

Patentes

  1. Búsqueda avanzada de patentes
Número de publicaciónWO2002063669 A2
Tipo de publicaciónSolicitud
Número de solicitudPCT/US2001/050150
Fecha de publicación15 Ago 2002
Fecha de presentación26 Oct 2001
Fecha de prioridad27 Oct 2000
También publicado comoUS6709316, WO2002063669A3
Número de publicaciónPCT/2001/50150, PCT/US/1/050150, PCT/US/1/50150, PCT/US/2001/050150, PCT/US/2001/50150, PCT/US1/050150, PCT/US1/50150, PCT/US1050150, PCT/US150150, PCT/US2001/050150, PCT/US2001/50150, PCT/US2001050150, PCT/US200150150, WO 02063669 A2, WO 02063669A2, WO 2002/063669 A2, WO 2002063669 A2, WO 2002063669A2, WO-A2-02063669, WO-A2-2002063669, WO02063669 A2, WO02063669A2, WO2002/063669A2, WO2002063669 A2, WO2002063669A2
InventoresLizhong Sun, Stan Tsai, Shijian Li
SolicitanteApplied Materials, Inc.
Exportar citaBiBTeX, EndNote, RefMan
Enlaces externos:  Patentscope, Espacenet
Method and apparatus for two-step barrier layer polishing
WO 2002063669 A2
Descripción  disponible en inglés
Reclamaciones  disponible en inglés
Citas de patentes
Patente citada Fecha de presentación Fecha de publicación Solicitante Título
WO1998004646A1 *21 Jul 19975 Feb 1998Ekc Technology, Inc.Chemical mechanical polishing composition and process
WO1998036045A1 *14 Feb 199820 Ago 1998Ekc Technology, Inc.Post clean treatment
WO1998049723A1 *30 Abr 19985 Nov 1998Minnesota Mining And Manufacturing CompanyMethod of planarizing the upper surface of a semiconductor wafer
WO2000000561A1 *25 Jun 19996 Ene 2000Cabot Microelectronics CorporationChemical mechanical polishing slurry useful for copper/tantalum substrates
WO2000024842A1 *22 Oct 19994 May 2000Arch Specialty Chemicals, Inc.A chemical mechanical polishing slurry system having an activator solution
EP1006166A1 *30 Nov 19997 Jun 2000Fujimi IncorporatedPolishing composition and polishing method employing it
EP1011131A1 *27 Oct 199921 Jun 2000Siemens AktiengesellschaftMethods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
EP1085067A1 *30 Nov 199921 Mar 2001Fujimi IncorporatedPolishing composition and polishing process
US6258721 *27 Dic 199910 Jul 2001General Electric CompanyDiamond slurry for chemical-mechanical planarization of semiconductor wafers
Citada por
Patente citante Fecha de presentación Fecha de publicación Solicitante Título
WO2005042658A1 *21 Oct 200412 May 2005Dupont Air Products Nanomaterials LlcAbrasive-free che.mical mechanical polishing composition and polishing process containing same
WO2006132905A2 *2 Jun 200614 Dic 2006Cabot Microelectronics CorporationPolishing composition and method for defect improvement by reduced particle stiction on copper surface
WO2006132905A3 *2 Jun 20069 Ago 2007Cabot Microelectronics CorpPolishing composition and method for defect improvement by reduced particle stiction on copper surface
WO2007021716A2 *9 Ago 200622 Feb 2007Cabot Microelectronics CorporationAbrasive-free polishing system
WO2007021716A3 *9 Ago 20067 Jun 2007Cabot Microelectronics CorpAbrasive-free polishing system
CN101263209B9 Ago 200613 Jul 2011卡伯特微电子公司无研磨剂的抛光系统
US72880217 Ene 200430 Oct 2007Cabot Microelectronics CorporationChemical-mechanical polishing of metals in an oxidized form
Clasificaciones
Clasificación internacionalC09G1/02, H01L21/321, H01L21/768
Clasificación cooperativaH01L21/7684, C09G1/02
Clasificación europeaH01L21/321P2, H01L21/768C2, C09G1/02
Eventos legales
FechaCódigoEventoDescripción
15 Ago 2002ALDesignated countries for regional patents
Kind code of ref document: A2
Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR
15 Ago 2002AKDesignated states
Kind code of ref document: A2
Designated state(s): JP KR SG
6 Sep 2002DFPERequest for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
9 Oct 2002121Ep: the epo has been informed by wipo that ep was designated in this application
5 Dic 2002AKDesignated states
Kind code of ref document: A3
Designated state(s): JP KR SG
5 Dic 2002ALDesignated countries for regional patents
Kind code of ref document: A3
Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR
17 Dic 2003122Ep: pct application non-entry in european phase
14 Sep 2005NENPNon-entry into the national phase in:
Ref country code: JP