WO2002071456A3 - Magnetic layer processing - Google Patents
Magnetic layer processing Download PDFInfo
- Publication number
- WO2002071456A3 WO2002071456A3 PCT/US2002/001555 US0201555W WO02071456A3 WO 2002071456 A3 WO2002071456 A3 WO 2002071456A3 US 0201555 W US0201555 W US 0201555W WO 02071456 A3 WO02071456 A3 WO 02071456A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnetic layer
- layer processing
- formed over
- dielectric layer
- cobalt
- Prior art date
Links
- 229910000808 amorphous metal alloy Inorganic materials 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/042—Printed circuit coils by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/046—Printed circuit coils structurally combined with ferromagnetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0046—Printed inductances with a conductive path having a bridge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002255484A AU2002255484A1 (en) | 2001-01-19 | 2002-01-18 | Magnetic layer processing |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/766,162 | 2001-01-19 | ||
US09/766,162 US6856228B2 (en) | 1999-11-23 | 2001-01-19 | Integrated inductor |
US09/772,783 US6815220B2 (en) | 1999-11-23 | 2001-01-30 | Magnetic layer processing |
US09/772,783 | 2001-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002071456A2 WO2002071456A2 (en) | 2002-09-12 |
WO2002071456A3 true WO2002071456A3 (en) | 2003-03-20 |
Family
ID=27117696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/001555 WO2002071456A2 (en) | 2001-01-19 | 2002-01-18 | Magnetic layer processing |
Country Status (3)
Country | Link |
---|---|
US (3) | US6815220B2 (en) |
AU (1) | AU2002255484A1 (en) |
WO (1) | WO2002071456A2 (en) |
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US7625640B2 (en) * | 2004-02-24 | 2009-12-01 | Shin-Etsu Polymer Co., Ltd. | Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function, and method of manufacturing the same |
US7109822B2 (en) * | 2004-02-26 | 2006-09-19 | Bae Systems Information And Electronic Systems Integration Inc. | Method and apparatus for rapid prototyping of monolithic microwave integrated circuits |
US7294525B2 (en) * | 2005-05-25 | 2007-11-13 | Intel Corporation | High performance integrated inductor |
US20060088971A1 (en) * | 2004-10-27 | 2006-04-27 | Crawford Ankur M | Integrated inductor and method of fabrication |
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US7541253B1 (en) * | 2005-10-05 | 2009-06-02 | National Semiconductor Corporation | Method of forming an integrated resistor |
US7541209B2 (en) * | 2005-10-14 | 2009-06-02 | Hewlett-Packard Development Company, L.P. | Method of forming a device package having edge interconnect pad |
US7719084B2 (en) * | 2006-06-30 | 2010-05-18 | Intel Corporation | Laminated magnetic material for inductors in integrated circuits |
US7423508B2 (en) * | 2006-06-30 | 2008-09-09 | Intel Corporation | Control of eddy currents in magnetic vias for inductors and transformers in integrated circuits |
US7652348B1 (en) * | 2006-07-27 | 2010-01-26 | National Semiconductor Corporation | Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits |
US7829425B1 (en) * | 2006-08-15 | 2010-11-09 | National Semiconductor Corporation | Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits |
FR2908231B1 (en) * | 2006-11-07 | 2009-01-23 | Commissariat Energie Atomique | SPIRAL-SHAPED MAGNETIC CORE AND INTEGRATED MICRO-INDUCTANCE COMPRISING SUCH MAGNETIC CORE CLOSED |
US7538653B2 (en) * | 2007-03-30 | 2009-05-26 | Intel Corporation | Grounding of magnetic cores |
US8361594B2 (en) * | 2007-11-07 | 2013-01-29 | Intel Corporation | Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby |
US20090160592A1 (en) * | 2007-12-20 | 2009-06-25 | Hopper Peter J | Helical core on-chip power inductor |
US7867787B2 (en) * | 2007-12-31 | 2011-01-11 | Intel Corporation | Forming inductor and transformer structures with magnetic materials using damascene processing for integrated circuits |
US20100071766A1 (en) * | 2008-09-23 | 2010-03-25 | United Soalr Ovonic LLC | Semiconductor device having a multi-layer substrate and a method of forming the semiconductor device |
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US9190201B2 (en) * | 2009-03-04 | 2015-11-17 | Qualcomm Incorporated | Magnetic film enhanced inductor |
US8393077B2 (en) * | 2009-09-15 | 2013-03-12 | Hewlett-Packard Development Company, L.P. | Fabrication of passive electronic components |
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US9484136B2 (en) * | 2012-09-04 | 2016-11-01 | Analog Devices Global | Magnetic core for use in an integrated circuit, an integrated circuit including such a magnetic core, a transformer and an inductor fabricated as part of an integrated circuit |
US20140152410A1 (en) | 2012-12-03 | 2014-06-05 | Arizona Board of Regents, a body corporate of the State of Arizona Acting for and on behalf of Arizo | Integrated tunable inductors |
US9380709B2 (en) * | 2013-03-15 | 2016-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of cutting conductive patterns |
US9159778B2 (en) * | 2014-03-07 | 2015-10-13 | International Business Machines Corporation | Silicon process compatible trench magnetic device |
US9383418B2 (en) | 2014-05-23 | 2016-07-05 | Texas Instruments Incorporated | Integrated dual axis fluxgate sensor using double deposition of magnetic material |
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JP6520875B2 (en) * | 2016-09-12 | 2019-05-29 | 株式会社村田製作所 | Inductor component and inductor component built-in substrate |
US10763164B2 (en) * | 2016-11-17 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure with inductor and method of forming thereof |
DE102017124691B4 (en) | 2017-01-13 | 2022-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
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US10741742B2 (en) * | 2018-02-28 | 2020-08-11 | The Regents Of The University Of Colorado, A Body Corporate | Enhanced superconducting transition temperature in electroplated rhenium |
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JPS6120311A (en) * | 1984-07-09 | 1986-01-29 | Nippon Telegr & Teleph Corp <Ntt> | Fabrication of amorphous soft magnetic film |
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-
2001
- 2001-01-30 US US09/772,783 patent/US6815220B2/en not_active Expired - Fee Related
-
2002
- 2002-01-18 AU AU2002255484A patent/AU2002255484A1/en not_active Abandoned
- 2002-01-18 WO PCT/US2002/001555 patent/WO2002071456A2/en not_active Application Discontinuation
-
2004
- 2004-04-16 US US10/826,245 patent/US6940147B2/en not_active Expired - Lifetime
-
2005
- 2005-01-28 US US11/046,635 patent/US7332792B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6120311A (en) * | 1984-07-09 | 1986-01-29 | Nippon Telegr & Teleph Corp <Ntt> | Fabrication of amorphous soft magnetic film |
EP0295028A1 (en) * | 1987-06-08 | 1988-12-14 | Esselte Meto International GmbH | Magnetic devices |
US5047296A (en) * | 1987-09-18 | 1991-09-10 | Commissariat A L'energie Atomique | Composite magnetic material and its production process |
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Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 010, no. 168 (E - 411) 14 June 1986 (1986-06-14) * |
TOMITA H ET AL: "OBLIQUE-FIELD ANNEALING EFFECT FOR IN-PLANE MAGNETIC ANISOTROPY OF SOFT MAGNETIC CO-NB-ZR THIN FILMS", IEEE TRANSACTIONS ON MAGNETICS, IEEE INC. NEW YORK, US, vol. 30, no. 3, 1 May 1994 (1994-05-01), pages 1336 - 1339, XP000456327, ISSN: 0018-9464 * |
Also Published As
Publication number | Publication date |
---|---|
WO2002071456A2 (en) | 2002-09-12 |
US20050133924A1 (en) | 2005-06-23 |
US20010031549A1 (en) | 2001-10-18 |
US6815220B2 (en) | 2004-11-09 |
US7332792B2 (en) | 2008-02-19 |
US6940147B2 (en) | 2005-09-06 |
AU2002255484A1 (en) | 2002-09-19 |
US20040195647A1 (en) | 2004-10-07 |
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