WO2002075790A2 - Method and apparatus for transferring heat from a substrate to a chuck - Google Patents
Method and apparatus for transferring heat from a substrate to a chuck Download PDFInfo
- Publication number
- WO2002075790A2 WO2002075790A2 PCT/US2002/002816 US0202816W WO02075790A2 WO 2002075790 A2 WO2002075790 A2 WO 2002075790A2 US 0202816 W US0202816 W US 0202816W WO 02075790 A2 WO02075790 A2 WO 02075790A2
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- Prior art keywords
- gas
- roughness
- substrate
- chuck
- rough
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Definitions
- the present invention pertains to a method and apparatus for transferring heat from a substrate to a chuck that supports the substrate.
- One process used with substrates involves subjecting the substrate to a plasma for depositing material onto or etching material from the substrate surface.
- a plasma for depositing material onto or etching material from the substrate surface.
- high-energy plasma particles bombard the substrate, and generate a large amount of heat, which is absorbed by the substrate.
- This heat needs to be quickly transferred from the substrate to the chuck and then quickly dissipated from the chuck, so that the substrate is kept at a steady temperature. If the transfer of heat from substrate to chuck, or the heat dissipation from the chuck itself is inefficient or inadequate, the temperature of the substrate increases rapidly.
- the accumulation of heat in the substrate can damage structures on the substrate (e.g., excess heat can cause unwanted diffusion of dopants in a semiconductor substrate, which can lead to leakage currents in transistors).
- This thermal buildup also impacts tool throughput because in the absence of an effective heat transfer mechanism, the plasma process needs to be operated at a lower power level or in an interrupted manner (to allow the substrates to cool) to achieve adequate process yield (e.g., fewer damaged devices).
- Control of substrate heating during plasma processing is also important because the substrate temperature affects the etch process itself (e.g., etch selectivity to photoresist, etc.).
- FIG. 1 is a schematic diagram of a prior art chuck apparatus 10 for supporting a substrate W in a low-pressure environment.
- Chuck 10 includes a chuck body 12 with an upper surface 14 and a conduit 16 formed within the chuck body that leads from a helium gas source (not shown) to surface 14.
- helium gas 18 is fed into conduit 16 and flows toward substrate W. Because of the low- pressure environment above the w ⁇ fer, the helium gas 18 introduced between the wafer and chuck, and the roughness of chuck surface 14, a gas gap forms between chuck surface 14 and the lower surface of substrate W.
- This gap separates the substrate and the chuck body by a low-pressure gas gap 30 having a mean gap width ⁇ , which is typically a few micrometers wide.
- substrate W is exposed to helium gas 18 flowing between chuck upper surface 14 and substrate W lower surface.
- the helium gas injected into gap 30 flows outwards to the outer edge of substrate W, its presence in the gap 30 thereby allowing the transfer of heat away from the substrate to the chuck (as indicated by arrows 32).
- This heat transfer mechanism is known as low-pressure gas gap conduction and is widely used in the semiconductor industry.
- Helium gas is used to effectuate the heat transfer because it is inert and has a high thermal conductivity (only hydrogen has a higher thermal conductivity).
- Low-pressure gas gap conduction is used for cooling in many types of substrate processing equipment. For instance, in most etch tools, there is a gap between the substrate and the lower electrode. This gap is filled with low-pressure helium or argon and is used to cool the substrate. To guide the helium or argon flow in a certain direction, various channels on the upper surface of the chuck or on the backside of the substrate may be used.
- the chuck temperature is controlled by its cooling system.
- the substrate temperature is constrained by the desire to maintain a high process yield and by the type of devices being fabricated on the substrate. For a given process and device type, this essentially fixes the temperature difference ⁇ T.
- the present invention pertains to methods and apparatus for transferring heat from a substrate to a chuck that supports the substrate.
- the present invention utilizes a chuck upper surface that is rough and may optionally utilize a gas having an atomic/molecular weight larger than argon.
- the surface may have a roughness (Ra) of 0.4 ⁇ m or more.
- the roughness (Ra) may be between 0.4 and about lO ⁇ m or about 1 to about 4 ⁇ m.
- the roughness may be such that the temperature difference between the chuck upper surface and the substrate may be within 5 percent, 2 percent or 1 percent of the minimum, or at the minimum.
- the roughness may be such that the ratio of accommodation coefficient ⁇ to the gas mean free path ⁇ is at a maximum, or within 1 percent, 2 percent or 5 percent of the maximum.
- the present invention may optionally include providing a substrate having a lower surface with a surface roughness, e.g., a Ra of l ⁇ m or more.
- a first aspect of the invention is a chuck apparatus for supporting a substrate having an upper and lower surface and for facilitating heat transfer away from the substrate during processing of the upper surface of the substrate.
- the apparatus comprises a chuck body having an outer edge and a roughened upper surface.
- the substrate which can be a silicon wafer, display substrate or the like, is arranged adjacent the roughened surface such that the substrate lower surface and the roughened chuck body upper surface form a gap therebetween.
- the apparatus further includes a gas conduit passing through the chuck body.
- the conduit has a first end open to the roughened upper surface and a second end opposite said first end.
- the conduit is arranged such that a gas can flow through the conduit from a gas source and into the gap and toward the chuck body outer edge.
- a second aspect of the invention is the apparatus as described above, but having different regions of surface roughness on the upper surface.
- a third aspect of the invention is the apparatus as described above, having a plurality of gas holes which can be connected to different gas sources that allow different types of gas to be injected into different zones within the gap, thereby providing for spatially varying amounts of heat transfer.
- a multi-channel gas mixer can be used to efficiently mix the gases and also inject the gas (mixed or otherwise) into the gap.
- a main control unit electronically connected to the different gas sources and the multi-channel gas mixer allows for dynamically changing the flow of gas (or gases) into the gap to adjust the heat transfer from the substrate to the chuck body.
- a fourth aspect of the invention is a method facilitating the transfer of heat from the substrate to the chuck body.
- the method comprises the steps of first, providing the upper surface with a rough surface.
- This surface roughness may be uniform across the surface, or may vary spatially in the form of different regions. Alternatively, the surface roughness may vary smoothly as a function of position, e.g., radially outwardly decreasing from the center of the surface.
- the next step is forming a gap between the roughened upper surface and the substrate lower surface by arranging the substrate adjacent the roughened surface.
- the last step then involves flowing at least one gas into said gap such that the gas flows towards the outer edge.
- the gas (which may be a gas mixture) flowing through the gap may have an atomic or molecular weight greater than that of argon, and thus a higher ratio ⁇ / ⁇ , where ⁇ is the accommodation coefficient of the surface and ⁇ is the gas mean free path.
- FIG. 1 is a cross-sectional schematic diagram of a prior art chuck apparatus, showing the flow of helium gas used to cool the substrate supported by the chuck;
- FIG. 2 is a plot of the known relationship between temperature T and gap width, illustrating the effective thickness of the gas gap and the temperature profile in the gap between the substrate and the chuck;
- FIG. 3 is a cross-sectional schematic diagram of a chuck apparatus according to a first embodiment of the present invention.
- FIG. 4A is a perspective view of the chuck apparatus according to a second aspect of the present invention showing the concentric gas rings comprising a plurality of gas injection holes for providing one or more gases to the chuck upper surface;
- FIG. 4B is a cross-sectional schematic diagram of the chuck apparatus of FIG. 4A, showing a main control unit for dynamically controlling the flow of gas into the gap to control the transfer of heat from the substrate to the chuck body;
- FIG. 5 is a plan view of the upper surface of the chuck body according to a third embodiment of the present invention showing concentric gas rings and regions of different surface roughness.
- DETAILED DESCRIPTION OF THE INVENTION [0021] The present invention pertains to methods and apparatus for transferring heat from a substrate to a chuck that supports the substrate.
- the heat transfer coefficient h g can be increased.
- the heat transfer coefficient h g is actually a fairly complex function of a number of other parameters, including the atomic and/or molecular sizes of the gas and solid surfaces, the pressure of the gas used, and the conditions of the surfaces (e.g., roughness or contamination) that define the gap.
- an effective gap width ⁇ ' that is greater than the physical mean gap width ⁇ is introduced.
- Figure 2 shows the known manner in which the effective thickness ⁇ ' of the gas gap relates to the physical gas gap width ⁇ and the temperature T within the gap.
- ⁇ is the gas mean free path (i.e., the average distance between collisions between gas atoms or molecules)
- the temperature is a linear function of position between the surfaces comprising the gap of thickness ⁇ .
- the temperature difference is ⁇ T
- the slope of the temperature profile curve is ⁇ T/ ⁇
- the pressure in the gas gap is lowered to a value such that ⁇ ⁇ ⁇ , or ⁇ ⁇ ⁇ , which is the case for typical substrate chuck gas gaps, and the heat flux q" is kept the same, the temperature difference ⁇ T' becomes much larger, as shown by curves CI and C2.
- temperature jump The phenomenon of deviation of the temperature profile in the vicinity of solid walls from a linear profile is called "temperature jump.” It is a result of the effects of solid walls and gas atomic and/or molecular weights, wall surface roughness, and low gas pressure, which all reduce the heat transfer coefficient.
- the size of temperature jump distances g depends on the accommodation coefficient ⁇ ; at each gas-solid interface.
- ⁇ 1.
- ⁇ ⁇ 1 can be anywhere between 0.01 and 1.0, depending on the gas pressure, the gas and solid wall chemical species atomic and/or molecular weights, and the conditions of the solid surface (e.g. roughness and contamination).
- the ratio ⁇ / ⁇ for some gases with low conductivity kg compared to helium, in the presence of solid surfaces of certain roughness, and at certain pressures, is such that it makes the overall heat transfer coefficient h g greater than that of helium under similar gap conditions (e.g., gap distance and gas pressure).
- FIG. 3 there is shown a first embodiment of a chuck apparatus 50 for supporting a substrate W with a lower surface W and an upper surface Wu, for providing enhanced gap conduction of heat during substrate processing.
- lower surface W L is optionally roughened to enhance the effects described below.
- lower surface W L may be roughened so that the average roughness Ra, as defined by ANSI standard ANSI-B46.1- 1985, may be l ⁇ m or more.
- Chuck apparatus 50 is in a low-pressure environment, such as within a chamber 54 having an evacuated interior region 56.
- Chuck apparatus 50 comprises a chuck body 60.
- Chuck body 60 has upper portion 64 with a rough upper surface 64u and a lower surface 64 L , and may possibly, but not necessarily, have a base portion 68 depending from lower surface 64 and having an upper end 68u and a lower end 68L- Upper surface 64u may have a roughness Ra, as defined by ANSI standard ANSI-B46.1-1985, of 0.4 ⁇ m or more. The roughness Ra of upper surface 64u may be 0.4 to about lO ⁇ m or about 1 to about 4 ⁇ m. Upper portion 64 and base portion 68 may be cylindrical or any other shape. Base portion 68 is typically narrower and more elongate than upper portion 64, so that chuck body 60 has a T-shaped cross-section with a central axis A.
- Base portion 68 may be a separate member attached to lower surface 64 L , or may be integral with upper portion 64. The latter has an outer edge 70.
- Chuck body 60 (or at least upper portion 64) is typically made of aluminum, stainless steel, or other materials compatible with the chamber process, and that are good heat conductors.
- Upper surface 64u is also referred to herein generally as the "chuck body upper surface.”
- Chuck body 60 further includes a central gas conduit 80 which may be aligned along central axis A and pass through upper cylindrical portion 64 and lower cylindrical portion 68. Alternately, portion 64 and/or portion 68 may be non-cylindrical. Conduit 80 has a first end 82a open at lower end 68 L and a second end 82b open to upper surface 64u.
- Chuck apparatus 50 also comprises a gas source 86 connected to gas conduit 80 at first end 82a via a gas line 90.
- Gas source 86 is shown to be exterior to chamber 54, but may be interior.
- Chuck apparatus also may include a main control unit 92 electronically connected to gas source 86 and is used to dynamically control the delivery of gas from the gas source to control the heat transfer process.
- main control unit 92 is a computer having a memory unit MU with both random-access memory (RAM) and read-only memory (ROM), a central processing unit CPU (e.g., PENTIUMTM processor from Intel Corporation), and a hard disk HD, all electronically connected.
- Hard disk HD serves as a secondary computer-readable storage medium, and may be, for example, a hard disk drive for storing information corresponding to instructions for the main control unit to control the uniformity of the substrate temperature via control of the heat transfer, as described below.
- Main control unit 92 also may include a disk drive DD, electronically connected to hard disk HD, memory unit MU and central processing unit CPU, wherein the disk drive is capable of accepting and reading (and even writing to) a computer-readable medium CRM, such as a floppy disk or compact disk (CD), on which is stored information corresponding to instructions for main control unit 92 to carry out the present invention. It is also preferable that main control unit 92 have data acquisition and control capability.
- Main control unit 92 may comprise a computer, such as a DELL PRECISION WORKSTATION 610TM, available from Dell Corporation, Dallas, Texas and a number of peripherals.
- Lower surface W of substrate W is arranged adjacent upper surface 64u during processing.
- Gas 94 from gas source 86 flows through central gas conduit 80 from first end 82a to second end 82b and then flows between substrate lower surface W L and upper surface 64u towards outer edge 70.
- the flow of gas 94 in the low-pressure environment of interior region 56 results in the formation of a low-pressure gap 100 of width ⁇ between substrate lower surface L and upper surface 64u of chuck body 60.
- the heat flux is illustrated by arrows 98.
- the flow of gas 94 into gap 100 can be dynamically controlled by main control unit 92 to control the heat transfer between substrate W and chuck body 60.
- the surface roughness of upper surface 64u may be selected so that the ratio ⁇ / ⁇ of the accommodation coefficient ⁇ to the mean free path ⁇ of the gas has a maximum value, or is within 1 percent, 2 percent or 5 percent of the maximum.
- the amount of surface roughness affects the efficiency of the exchange of energy between the gas atoms/molecules and the substrate and chuck surfaces.
- the interaction of the gas atoms/molecules with a rough surface is more like an inelastic collision as compared to that with a smooth surface, which means more energy is exchanged between the gas atoms/molecules and the surfaces.
- the use of one or more roughened surfaces increases the accommodation coefficient ⁇ , thereby increasing the ratio ⁇ / ⁇ .
- the result is a more efficient exchange of heat between the gas molecules and the substrate and chuck surfaces.
- the surface roughness can be uniform across upper surface 64u, can comprise various regions of surface roughness (discussed further below), or can vary smoothly (e.g., radially outwardly decreasing, or increasing, from central axis A).
- the amount of surface roughness depends on the gas that is being used.
- the top surfaces 14 are typically mirror polished, which means the roughness is generally less than 0.1 to 0.4 ⁇ m.
- Chucks with different roughnesses of the top surface 64u can be tested and the one that reduces the temperature difference ⁇ T between the chuck surface and the substrate can be used. For example, a chuck surface roughness that minimizes the temperature difference or is within 5 percent, 2 percent or 1 percent of the minimum can be selected.
- the chucks should be tested at the same power setting, and the temperatures of the wafer and chuck may be measured using, for example, thermocouples or fluoroscopic temperature sensors.
- Gas 94 supplied by gas source 86 may be helium or argon, or have an atomic or molecular weight greater than that of helium or argon, or be a mixture of gasses.
- atomic gases include noble gases neon, argon, krypton, and xenon.
- molecular gases include those typically used in etch processes, such as C 4 F 8 , SF 6 , as well as CsFg, C F 6 , etc.
- FIGS. 4A and 4B there is shown a second chuck apparatus 150 for supporting a substrate W as a second embodiment of the present invention.
- a x-y plane in gap 100 parallel to surface 64u is shown for the sake of orientation.
- Chuck apparatus 150 is essentially the same as chuck apparatus 50 described above, except that chuck apparatus 150 includes some additional features, described below. Those elements in chuck apparatus 150 that are the same as in chuck apparatus 50 are given the same reference numbers. Also, chuck apparatus 150 is in a low-pressure environment (region 56) as well, though chamber 54 is not shown in FIGS. 4A and 4B.
- chuck apparatus 150 includes the same elements as chuck 50, and further includes a plurality of gas injection holes 160 on upper surface 64u arranged in concentric gas rings 162a and 162b.
- holes 160 may be arranged as rays emanating from the center of the chuck.
- Each concentric gas ring 162a, 162b is in pneumatic communication with a corresponding gas ring conduit 166a and 166b connecting upper surface 64u and lower surface 68 L -
- gas injection holes 160 are the openings at one end of conduits 166a and 166b at surface 64u-
- two concentric gas rings and two corresponding gas conduits are shown for the sake of illustration, in practice one or more such concentric gas rings and gas conduits can be employed.
- Chuck apparatus 150 additionally includes secondary gas sources 186A and 186B (i.e., second and third gas sources, where gas source 86 is the first or primary gas source) pneumatically connected to corresponding gas conduits 166a and 166b via respective gas supply lines 190A and 190B, for supplying second and third gases 194A and 194B to upper surface 64u through gas injection holes 160.
- upper surface 64u receives gas 94 from first gas source 86, second gas 194A from gas source 186A, and third gas 194B from third gas source 186B.
- Second and third gases 194A and 194B may be helium or argon, may each have an average atomic/molecular weight greater than helium or argon, or may be a mixture of gases.
- chuck apparatus 150 may include a multi-channel gas mixer 200 connected to some or all of gas sources 86, 186A and 186B, for supplying to upper surface 64u through conduits 80, 166a and 166b, one or more different gas mixtures.
- This allows chuck apparatus 150 to have different volume zones Zj (e.g., Zj, Z , Z 3 ) within gap 100, wherein the ratios (k ⁇ / ⁇ ); differ due to the introduction of different compositions of gas mixtures into gap 100 in the different zones.
- the configuration of chuck apparatus 150 thus allows for spatially varying the heat transfer coefficient in the x-y directions within gap 100, thereby providing a way of controlling the temperature uniformity of substrate W. This feature is particularly useful for processes that heat the substrate in a spatially varying manner.
- main control unit 92 is electrically connected to first gas source 86, secondary gas sources 186A and 186B, and to multi-channel gas mixer 200. This allows for dynamic control of the mixing of gases from these gas sources and for controlling the flow of the mixed gas into the gap to control the heat transfer from substrate W to chuck body 60.
- FIG. 5 is a plan view of chuck apparatus 300 of the present invention.
- a radial coordinate r is shown for reference.
- Chuck apparatus 300 is identical in most respects to chuck apparatus 150 described above in connection with FIGS. 4A and 4B.
- the difference between chuck apparatus 150 and chuck apparatus 300 is that surface 64u of chuck apparatus 300 has annular regions Rj (i.e., R 1; R and R 3 ) having different surface roughnesses o, (e.g., ⁇ i, ⁇ 2 and ⁇ , respectively).
- Regions R 1? R 2 and R 3 may be defined by concentric gas rings 162a and 162b, each of which comprise a plurality of gas holes 160, as described above in connection with chuck apparatus 150.
- the ratios ( ⁇ / ⁇ ); of the accommodation coefficient ⁇ to the mean free path ⁇ of the gases in different zones Z; corresponding to regions R; may be very different due to two factors.
- the first factor is the different gases injected into different zones Z; corresponding to regions R; of upper surface 64u-
- the second factor is the different surface roughnesses ⁇ ; regions R;.
- Exemplary values for surface roughnesses ⁇ 1 ⁇ ⁇ 2 and ⁇ 3 are an Ra of 2, 8 and 16 ⁇ m. Therefore, the heat transfer due to gas gap conduction in zones Z; may be quite different, even more so than in chuck apparatus 150.
- Chuck apparatus 300 thus provides a more versatile system for cooling substrate W and for controlling substrate temperature uniformity. Greater or fewer zones Z; can be formed, depending on the need for controlling the temperature uniformity.
- Multi-channel gas mixer 200 in the second and third embodiments is used to mix two or more component gases from two or more gases from primary gas source 86 and secondary gas sources 186A and 186B into gas mixtures of varying composition. It will be apparent to one skilled in the art that the use of three gasses sources as described above and shown in FIGS. 4A and 4B is for illustration, and that any reasonable number of gas sources can be connected to gas mixer 200 to achieve a wide variety of gas mixtures, hi the present invention, two or more different gases with different values of k ⁇ / ⁇ may be used so that a gas mixture having a wide range of k ⁇ / ⁇ , and thus a wide range of heat transfer coefficients, can be achieved.
- Multi-channel gas mixer 200 can then provide mixtures of the two (or more) gases that have a heat transfer coefficient between a low value (e.g., for pure helium gas) and a high value (e.g. for the pure heavy gas).
- a low value e.g., for pure helium gas
- a high value e.g. for the pure heavy gas
- the different regions R may be of a shape that corresponds to the heating of the substrate.
- annular regions R such as described may prove most advantageous.
- other shapes can be used, particularly where the substrate heating distribution is non-radial.
- surface roughness ⁇ can be a smooth function of position (i.e., ⁇ (x,y) or ⁇ (r), where r is the radial measure (x 2 +y 2 ) 1/2 ) so that there are no discrete regions R, but one region R where ⁇ varies continuously.
Abstract
Description
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002574108A JP2004536447A (en) | 2001-02-16 | 2002-02-04 | Method and apparatus for transferring heat from substrate to chuck |
AU2002236931A AU2002236931A1 (en) | 2001-02-16 | 2002-02-04 | Method and apparatus for transferring heat from a substrate to a chuck |
KR1020037010707A KR100655986B1 (en) | 2001-02-16 | 2002-02-04 | Method and apparatus for transferring heat from a substrate to a chuck |
US10/639,510 US7017652B2 (en) | 2001-02-16 | 2003-08-13 | Method and apparatus for transferring heat from a substrate to a chuck |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US26891301P | 2001-02-16 | 2001-02-16 | |
US60/268,913 | 2001-02-16 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/639,510 Continuation US7017652B2 (en) | 2001-02-16 | 2003-08-13 | Method and apparatus for transferring heat from a substrate to a chuck |
Publications (2)
Publication Number | Publication Date |
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WO2002075790A2 true WO2002075790A2 (en) | 2002-09-26 |
WO2002075790A3 WO2002075790A3 (en) | 2002-11-14 |
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PCT/US2002/002816 WO2002075790A2 (en) | 2001-02-16 | 2002-02-04 | Method and apparatus for transferring heat from a substrate to a chuck |
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US (1) | US7017652B2 (en) |
JP (1) | JP2004536447A (en) |
KR (1) | KR100655986B1 (en) |
CN (1) | CN1491435A (en) |
AU (1) | AU2002236931A1 (en) |
TW (1) | TWI272689B (en) |
WO (1) | WO2002075790A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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Cited By (4)
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---|---|---|---|---|
US7732010B2 (en) | 2003-05-09 | 2010-06-08 | Applied Materials, Inc. | Method for supporting a glass substrate to improve uniform deposition thickness |
US8372205B2 (en) | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
EP1965412A1 (en) * | 2004-09-17 | 2008-09-03 | Asm International N.V. | Susceptor with surface roughness for high temperature substrate processing |
US11699573B2 (en) | 2018-02-09 | 2023-07-11 | Tokyo Electron Limited | Plasma processing method |
Also Published As
Publication number | Publication date |
---|---|
KR20030076681A (en) | 2003-09-26 |
WO2002075790A3 (en) | 2002-11-14 |
US20040043639A1 (en) | 2004-03-04 |
CN1491435A (en) | 2004-04-21 |
AU2002236931A1 (en) | 2002-10-03 |
JP2004536447A (en) | 2004-12-02 |
KR100655986B1 (en) | 2006-12-08 |
TWI272689B (en) | 2007-02-01 |
US7017652B2 (en) | 2006-03-28 |
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