WO2002075790A3 - Method and apparatus for transferring heat from a substrate to a chuck - Google Patents

Method and apparatus for transferring heat from a substrate to a chuck Download PDF

Info

Publication number
WO2002075790A3
WO2002075790A3 PCT/US2002/002816 US0202816W WO02075790A3 WO 2002075790 A3 WO2002075790 A3 WO 2002075790A3 US 0202816 W US0202816 W US 0202816W WO 02075790 A3 WO02075790 A3 WO 02075790A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
gas
conduit
gap
chuck
Prior art date
Application number
PCT/US2002/002816
Other languages
French (fr)
Other versions
WO2002075790A2 (en
Inventor
Andrej Mitrovic
Lianjun Liu
Original Assignee
Tokyo Electron Ltd
Andrej Mitrovic
Lianjun Liu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Andrej Mitrovic, Lianjun Liu filed Critical Tokyo Electron Ltd
Priority to KR1020037010707A priority Critical patent/KR100655986B1/en
Priority to JP2002574108A priority patent/JP2004536447A/en
Priority to AU2002236931A priority patent/AU2002236931A1/en
Publication of WO2002075790A2 publication Critical patent/WO2002075790A2/en
Publication of WO2002075790A3 publication Critical patent/WO2002075790A3/en
Priority to US10/639,510 priority patent/US7017652B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

A chuck method of and apparatus (50, 150, 300) for supporting a substrate (W) during processing of the substrate, where the substrate has a lower surface (WL). The apparatus facilitates heat transfer away from the substrate during processing of the substrate. The apparatus comprises a chuck body (60) having an outer edge (70) and a rough upper surface (64U). The substrate is arranged adjacent the rough surface such that the substrate lower surface and the roughened upper surface form a gap (100) therebetween. The apparatus further includes a central gas conduit (80) passing through the chuck body. The central conduit has a second end (82b) open to the roughened upper surface and a first end opposite the second end connected to a gas source (86). The conduit is arranged such that a gas can flow through the conduit into the gap and toward the chuck body outer edge. The gas used has an atomic or molecular weight that is greater than that of helium. The surface roughness, the substrate lower surface and the flow of the heavier gas in the gap contribute to defining an accommodation coefficient α and a mean free path λ such that the ratio α/λ is higher than that of prior art apparatus.
PCT/US2002/002816 2001-02-16 2002-02-04 Method and apparatus for transferring heat from a substrate to a chuck WO2002075790A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020037010707A KR100655986B1 (en) 2001-02-16 2002-02-04 Method and apparatus for transferring heat from a substrate to a chuck
JP2002574108A JP2004536447A (en) 2001-02-16 2002-02-04 Method and apparatus for transferring heat from substrate to chuck
AU2002236931A AU2002236931A1 (en) 2001-02-16 2002-02-04 Method and apparatus for transferring heat from a substrate to a chuck
US10/639,510 US7017652B2 (en) 2001-02-16 2003-08-13 Method and apparatus for transferring heat from a substrate to a chuck

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26891301P 2001-02-16 2001-02-16
US60/268,913 2001-02-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/639,510 Continuation US7017652B2 (en) 2001-02-16 2003-08-13 Method and apparatus for transferring heat from a substrate to a chuck

Publications (2)

Publication Number Publication Date
WO2002075790A2 WO2002075790A2 (en) 2002-09-26
WO2002075790A3 true WO2002075790A3 (en) 2002-11-14

Family

ID=23025043

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/002816 WO2002075790A2 (en) 2001-02-16 2002-02-04 Method and apparatus for transferring heat from a substrate to a chuck

Country Status (7)

Country Link
US (1) US7017652B2 (en)
JP (1) JP2004536447A (en)
KR (1) KR100655986B1 (en)
CN (1) CN1491435A (en)
AU (1) AU2002236931A1 (en)
TW (1) TWI272689B (en)
WO (1) WO2002075790A2 (en)

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US20040221959A1 (en) 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20050051098A1 (en) * 2003-09-05 2005-03-10 Tooru Aramaki Plasma processing apparatus
US20060060145A1 (en) * 2004-09-17 2006-03-23 Van Den Berg Jannes R Susceptor with surface roughness for high temperature substrate processing
TWI297908B (en) * 2005-03-16 2008-06-11 Ngk Insulators Ltd Processing device
TWI375295B (en) * 2005-07-15 2012-10-21 Applied Materials Inc Reducing electrostatic charge by roughening the susceptor
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
TWI327761B (en) * 2005-10-07 2010-07-21 Rohm & Haas Elect Mat Method for making semiconductor wafer and wafer holding article
JP4611217B2 (en) * 2006-01-30 2011-01-12 株式会社日立ハイテクノロジーズ Wafer mounting electrode
US9383138B2 (en) * 2007-03-30 2016-07-05 Tokyo Electron Limited Methods and heat treatment apparatus for uniformly heating a substrate during a bake process
US20080241400A1 (en) * 2007-03-31 2008-10-02 Tokyo Electron Limited Vacuum assist method and system for reducing intermixing of lithography layers
JP4457242B2 (en) * 2007-11-30 2010-04-28 Ｏｋｉセミコンダクタ株式会社 Manufacturing method of semiconductor device
US8410393B2 (en) 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
KR20120014361A (en) * 2010-08-09 2012-02-17 삼성엘이디 주식회사 Susceptor and apparatus for cvd comprising the susceptor
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
KR101251880B1 (en) * 2011-12-29 2013-04-08 로체 시스템즈(주) Apparatus for etching of wafer and wafer etching method using the same
DE102012101923B4 (en) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substrate carrier assembly, coating system with substrate carrier assembly and method for performing a coating method
US20130240144A1 (en) * 2012-03-13 2013-09-19 Applied Materials, Inc. Fast response fluid temperature control system
JP7020951B2 (en) * 2018-02-09 2022-02-16 東京エレクトロン株式会社 Plasma processing system and plasma processing method
CN111898306B (en) * 2020-08-07 2024-01-30 珠海格力智能装备有限公司 Thermosetting coupling analysis method and analysis device for robot

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Also Published As

Publication number Publication date
AU2002236931A1 (en) 2002-10-03
US20040043639A1 (en) 2004-03-04
CN1491435A (en) 2004-04-21
KR20030076681A (en) 2003-09-26
US7017652B2 (en) 2006-03-28
JP2004536447A (en) 2004-12-02
KR100655986B1 (en) 2006-12-08
WO2002075790A2 (en) 2002-09-26
TWI272689B (en) 2007-02-01

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