WO2002084712A3 - Rapid thermal processing system for integrated circuits - Google Patents

Rapid thermal processing system for integrated circuits Download PDF

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Publication number
WO2002084712A3
WO2002084712A3 PCT/IB2002/001130 IB0201130W WO02084712A3 WO 2002084712 A3 WO2002084712 A3 WO 2002084712A3 IB 0201130 W IB0201130 W IB 0201130W WO 02084712 A3 WO02084712 A3 WO 02084712A3
Authority
WO
WIPO (PCT)
Prior art keywords
lamps
heat
processing system
chamber
rapid thermal
Prior art date
Application number
PCT/IB2002/001130
Other languages
French (fr)
Other versions
WO2002084712A2 (en
Inventor
Sing-Pin Tay
Yao Zhi Hu
Markus Hauf
Original Assignee
Mattson Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Tech Inc filed Critical Mattson Tech Inc
Priority to AT02718446T priority Critical patent/ATE488862T1/en
Priority to JP2002581564A priority patent/JP2005503003A/en
Priority to EP02718446A priority patent/EP1382058B1/en
Priority to KR10-2003-7013513A priority patent/KR20030088504A/en
Priority to DE60238313T priority patent/DE60238313D1/en
Publication of WO2002084712A2 publication Critical patent/WO2002084712A2/en
Publication of WO2002084712A3 publication Critical patent/WO2002084712A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamsp and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.
PCT/IB2002/001130 2001-04-17 2002-04-03 Rapid thermal processing system for integrated circuits WO2002084712A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT02718446T ATE488862T1 (en) 2001-04-17 2002-04-03 FAST HEAT TREATMENT SYSTEM FOR INTEGRATED CIRCUITS
JP2002581564A JP2005503003A (en) 2001-04-17 2002-04-03 Rapid thermal processing system for integrated circuits.
EP02718446A EP1382058B1 (en) 2001-04-17 2002-04-03 Rapid thermal processing system for integrated circuits
KR10-2003-7013513A KR20030088504A (en) 2001-04-17 2002-04-03 Rapid thermal processing system for integrated circuits
DE60238313T DE60238313D1 (en) 2001-04-17 2002-04-03 QUICK HEAT TREATMENT SYSTEM FOR INTEGRATED CIRCUITS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/836,098 2001-04-17
US09/836,098 US6600138B2 (en) 2001-04-17 2001-04-17 Rapid thermal processing system for integrated circuits

Publications (2)

Publication Number Publication Date
WO2002084712A2 WO2002084712A2 (en) 2002-10-24
WO2002084712A3 true WO2002084712A3 (en) 2003-03-13

Family

ID=25271237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/001130 WO2002084712A2 (en) 2001-04-17 2002-04-03 Rapid thermal processing system for integrated circuits

Country Status (9)

Country Link
US (1) US6600138B2 (en)
EP (1) EP1382058B1 (en)
JP (1) JP2005503003A (en)
KR (1) KR20030088504A (en)
CN (1) CN100338729C (en)
AT (1) ATE488862T1 (en)
DE (1) DE60238313D1 (en)
TW (1) TWI250587B (en)
WO (1) WO2002084712A2 (en)

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Also Published As

Publication number Publication date
EP1382058B1 (en) 2010-11-17
KR20030088504A (en) 2003-11-19
ATE488862T1 (en) 2010-12-15
CN1507648A (en) 2004-06-23
WO2002084712A2 (en) 2002-10-24
EP1382058A2 (en) 2004-01-21
TWI250587B (en) 2006-03-01
DE60238313D1 (en) 2010-12-30
JP2005503003A (en) 2005-01-27
US6600138B2 (en) 2003-07-29
CN100338729C (en) 2007-09-19
US20020148824A1 (en) 2002-10-17

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