WO2002091495A3 - Molecular memory device - Google Patents

Molecular memory device Download PDF

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Publication number
WO2002091495A3
WO2002091495A3 PCT/US2002/014269 US0214269W WO02091495A3 WO 2002091495 A3 WO2002091495 A3 WO 2002091495A3 US 0214269 W US0214269 W US 0214269W WO 02091495 A3 WO02091495 A3 WO 02091495A3
Authority
WO
WIPO (PCT)
Prior art keywords
state
active region
pair
memory cell
electrodes
Prior art date
Application number
PCT/US2002/014269
Other languages
French (fr)
Other versions
WO2002091495A2 (en
Inventor
Vladimir Bulovic
Aaron Mandell
Andrew Perlman
Original Assignee
Coatue Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Coatue Corp filed Critical Coatue Corp
Priority to AU2002340793A priority Critical patent/AU2002340793A1/en
Publication of WO2002091495A2 publication Critical patent/WO2002091495A2/en
Publication of WO2002091495A3 publication Critical patent/WO2002091495A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/13—Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Abstract

A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.
PCT/US2002/014269 2001-05-07 2002-05-07 Molecular memory device WO2002091495A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002340793A AU2002340793A1 (en) 2001-05-07 2002-05-07 Molecular memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28905601P 2001-05-07 2001-05-07
US60/289,056 2001-05-07

Publications (2)

Publication Number Publication Date
WO2002091495A2 WO2002091495A2 (en) 2002-11-14
WO2002091495A3 true WO2002091495A3 (en) 2003-08-21

Family

ID=23109845

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/014269 WO2002091495A2 (en) 2001-05-07 2002-05-07 Molecular memory device

Country Status (3)

Country Link
US (2) US6781868B2 (en)
AU (1) AU2002340793A1 (en)
WO (1) WO2002091495A2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859548B2 (en) 1996-09-25 2005-02-22 Kabushiki Kaisha Toshiba Ultrasonic picture processing method and ultrasonic picture processing apparatus
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
KR100885276B1 (en) 2001-05-07 2009-02-23 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Floating gate memory device using composite molecular material
WO2002091494A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Switch element having memeory effect
DE60220912T2 (en) * 2001-05-07 2008-02-28 Advanced Micro Devices, Inc., Sunnyvale MEMORY DEVICE WITH A SELF-INSTALLING POLYMER AND METHOD FOR THE PRODUCTION THEREOF
AU2002340793A1 (en) 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
DE60130586T2 (en) 2001-08-13 2008-06-19 Advanced Micro Devices, Inc., Sunnyvale CELL
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
DE10300521A1 (en) * 2003-01-09 2004-07-22 Siemens Ag Organoresistive memory
US7049153B2 (en) * 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
US6916696B1 (en) 2003-11-20 2005-07-12 Advanced Micro Devices, Inc. Method for manufacturing a memory element
DE102004010379A1 (en) * 2004-03-03 2005-09-22 Schott Ag Process for the production of wafers with low-defect surfaces, the use of such wafers and electronic components obtained therefrom
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7742322B2 (en) 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US20050274609A1 (en) * 2004-05-18 2005-12-15 Yong Chen Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field
JP4146395B2 (en) * 2004-06-09 2008-09-10 株式会社東芝 Storage device
US7289353B2 (en) * 2004-08-17 2007-10-30 Spansion, Llc Systems and methods for adjusting programming thresholds of polymer memory cells
US7148144B1 (en) 2004-09-13 2006-12-12 Spansion Llc Method of forming copper sulfide layer over substrate
US7135396B1 (en) 2004-09-13 2006-11-14 Spansion Llc Method of making a semiconductor structure
US7129133B1 (en) 2004-09-13 2006-10-31 Spansion Llc Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
US7115440B1 (en) 2004-10-01 2006-10-03 Advanced Micro Devices, Inc. SO2 treatment of oxidized CuO for copper sulfide formation of memory element growth
US7067349B1 (en) 2004-10-19 2006-06-27 Spansion Llc Ion path polymers for ion-motion memory
US7374654B1 (en) 2004-11-01 2008-05-20 Spansion Llc Method of making an organic memory cell
US7141482B1 (en) 2004-11-02 2006-11-28 Spansion Llc Method of making a memory cell
US7232765B1 (en) 2004-11-12 2007-06-19 Spansion Llc Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structures
US7309875B2 (en) * 2004-11-22 2007-12-18 Hewlett-Packard Development Company, L.P. Nanocrystal protective layer for crossbar molecular electronic devices
US20060113524A1 (en) * 2004-12-01 2006-06-01 Colin Bill Polymer-based transistor devices, methods, and systems
KR100734832B1 (en) * 2004-12-15 2007-07-03 한국전자통신연구원 Apparatus of data storage using current switching in metal oxide layer
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US7813160B2 (en) * 2005-01-11 2010-10-12 The Trustees Of The University Of Pennsylvania Nanocrystal quantum dot memory devices
US7232750B1 (en) 2005-01-12 2007-06-19 Spansion Llc Methods involving spin-on polymers that reversibly bind charge carriers
US7084062B1 (en) 2005-01-12 2006-08-01 Advanced Micro Devices, Inc. Use of Ta-capped metal line to improve formation of memory element films
US7105374B1 (en) 2005-01-12 2006-09-12 Spansion Llc Memory cell containing copolymer containing diarylacetylene portion
US7273766B1 (en) 2005-01-12 2007-09-25 Spansion Llc Variable density and variable persistent organic memory devices, methods, and fabrication
US7306988B1 (en) 2005-02-22 2007-12-11 Advanced Micro Devices, Inc. Memory cell and method of making the memory cell
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
US8012673B1 (en) 2005-03-01 2011-09-06 Spansion Llc Processing a copolymer to form a polymer memory cell
US7579631B2 (en) * 2005-03-22 2009-08-25 Spansion Llc Variable breakdown characteristic diode
US7145824B2 (en) * 2005-03-22 2006-12-05 Spansion Llc Temperature compensation of thin film diode voltage threshold in memory sensing circuit
US7344913B1 (en) 2005-04-06 2008-03-18 Spansion Llc Spin on memory cell active layer doped with metal ions
US7776682B1 (en) 2005-04-20 2010-08-17 Spansion Llc Ordered porosity to direct memory element formation
US20060245235A1 (en) * 2005-05-02 2006-11-02 Advanced Micro Devices, Inc. Design and operation of a resistance switching memory cell with diode
US7361586B2 (en) * 2005-07-01 2008-04-22 Spansion Llc Preamorphization to minimize void formation
US20070025166A1 (en) * 2005-07-27 2007-02-01 Spansion Llc Program/erase waveshaping control to increase data retention of a memory cell
US7632706B2 (en) * 2005-10-21 2009-12-15 Spansion Llc System and method for processing an organic memory cell
US7902086B2 (en) * 2006-12-08 2011-03-08 Spansion Llc Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell
US7830726B2 (en) * 2008-09-30 2010-11-09 Seagate Technology Llc Data storage using read-mask-write operation
JP2012513686A (en) * 2008-12-23 2012-06-14 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． Memristor device and method for making and using the device
WO2010078483A1 (en) 2008-12-31 2010-07-08 Contour Semiconductor, Inc. Capacitor block comprising capacitors that can be connected to each other and method for charging and discharging the capacitors to write a phase change material memory
US9184213B2 (en) * 2010-01-29 2015-11-10 Hewlett-Packard Development Company, L.P. Nanoscale switching device
CN102543734B (en) 2010-12-08 2015-06-24 中国科学院微电子研究所 MOS (metal oxide semiconductor) device with memory function and forming method of MOS device
US20120241710A1 (en) 2011-03-21 2012-09-27 Nanyang Technological University Fabrication of RRAM Cell Using CMOS Compatible Processes
US8673692B2 (en) 2012-01-19 2014-03-18 Globalfoundries Singapore Pte Ltd. Charging controlled RRAM device, and methods of making same
US8698118B2 (en) 2012-02-29 2014-04-15 Globalfoundries Singapore Pte Ltd Compact RRAM device and methods of making same
US9276041B2 (en) 2012-03-19 2016-03-01 Globalfoundries Singapore Pte Ltd Three dimensional RRAM device, and methods of making same
US8674332B2 (en) 2012-04-12 2014-03-18 Globalfoundries Singapore Pte Ltd RRAM device with an embedded selector structure and methods of making same
JP5779138B2 (en) * 2012-06-07 2015-09-16 株式会社東芝 Molecular memory
CN110437444A (en) * 2019-07-19 2019-11-12 太原理工大学 A kind of polypyrrole hydrogel of morphology controllable and preparation method thereof and the application in supercapacitor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4652894A (en) * 1980-03-14 1987-03-24 The Johns Hopkins University Electrical organic thin film switching device switching between detectably different oxidation states
EP0268370A2 (en) * 1986-10-13 1988-05-25 Canon Kabushiki Kaisha Switching device
US5034192A (en) * 1984-11-23 1991-07-23 Massachusetts Institute Of Technology Molecule-based microelectronic devices
EP0727822A2 (en) * 1995-02-14 1996-08-21 Canon Kabushiki Kaisha Semiconductor memory device
WO1999004440A1 (en) * 1997-07-14 1999-01-28 Technion Research And Development Foundation Ltd. Microelectronic components and electronic networks comprising dna
WO2002091494A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Switch element having memeory effect
WO2002091496A2 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell

Family Cites Families (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012598B1 (en) 1970-04-02 1975-05-13
US3810127A (en) 1970-06-23 1974-05-07 Intel Corp Programmable circuit {13 {11 the method of programming thereof and the devices so programmed
US3833894A (en) * 1973-06-20 1974-09-03 Ibm Organic memory device
JPS5589980A (en) 1978-11-27 1980-07-08 Nec Corp Semiconductor memory unit
US4267558A (en) 1979-01-05 1981-05-12 Texas Instruments Incorporated Electrically erasable memory with self-limiting erase
US4371883A (en) 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
JPS5864068A (en) 1981-10-14 1983-04-16 Agency Of Ind Science & Technol Non-volatile semiconductor memory
US4677742A (en) 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
GB2160049B (en) 1984-05-28 1987-06-03 Suwa Seikosha Kk A non-volatile memory circuit
US4631562A (en) 1985-05-31 1986-12-23 Rca Corporation Zener diode structure
DE3602887A1 (en) 1986-01-31 1987-08-06 Bayer Ag NON-VOLATILE ELECTRONIC MEMORY
US4727514A (en) 1986-02-11 1988-02-23 Texas Instruments Incorporated Programmable memory with memory cells programmed by addressing
US4834911A (en) 1986-08-25 1989-05-30 Electro-Organic Company Intrinsically conductive and semiconductive polymers, products formed with such polymers and methods of forming same
JPH01100788A (en) 1987-10-13 1989-04-19 Hitachi Ltd Semiconductor integrated circuit device
US4839700A (en) 1987-12-16 1989-06-13 California Institute Of Technology Solid-state non-volatile electronically programmable reversible variable resistance device
US5440518A (en) 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
US5136212A (en) 1988-02-18 1992-08-04 Canon Kabushiki Kaisha Electron emitting device, electron generator employing said electron emitting device, and method for driving said generator
US5196912A (en) 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
US5892244A (en) 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
JP2636035B2 (en) 1989-02-27 1997-07-30 松下電器産業株式会社 Ferroelectric liquid crystal composition and ferroelectric liquid crystal display
EP0418504B1 (en) * 1989-07-25 1995-04-05 Matsushita Electric Industrial Co., Ltd. Organic semiconductor memory device having a MISFET structure and its control method
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US5272101A (en) 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5552627A (en) 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5130380A (en) 1990-05-29 1992-07-14 Carew Evan B Conductive polymers
JP3150331B2 (en) * 1990-09-28 2001-03-26 株式会社東芝 Organic thin film element
JPH0770731B2 (en) 1990-11-22 1995-07-31 松下電器産業株式会社 Electroplastic element
US5245543A (en) 1990-12-21 1993-09-14 Texas Instruments Incorporated Method and apparatus for integrated circuit design
US5296716A (en) 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
FR2672158B1 (en) 1991-01-24 1993-04-09 Commissariat Energie Atomique SENSOR FOR THE DETECTION OF CHEMICAL SPECIES OR PHOTONS USING A FIELD EFFECT TRANSISTOR.
JP3224829B2 (en) 1991-08-15 2001-11-05 株式会社東芝 Organic field effect device
GB9117680D0 (en) 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP3454821B2 (en) 1991-08-19 2003-10-06 エナージー・コンバーション・デバイセス・インコーポレーテッド Electrically erasable, directly overwritable, multi-bit single-cell memory elements and arrays made therefrom
US5163212A (en) * 1991-09-27 1992-11-17 Oil Country Manufacturing, Inc. Safety tool for handling of unitized jaw assembly in power sucker rod tongs
US5563081A (en) 1992-03-23 1996-10-08 Rohm Co., Inc. Method for making a nonvolatile memory device utilizing a field effect transistor having a ferroelectric gate film
JP2822791B2 (en) 1992-06-30 1998-11-11 日本電気株式会社 Semiconductor device
RU2071126C1 (en) 1992-08-27 1996-12-27 Кригер Юрий Генрихович Storage element
US5579199A (en) 1992-11-26 1996-11-26 Sharp Kabushiki Kaisha Non-volatile memory device and a method for producing the same
US5581111A (en) 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5818749A (en) 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
JPH07106440A (en) 1993-10-04 1995-04-21 Hitachi Ltd Nonvolatile semiconductor memory and application system thereof
JP3467858B2 (en) 1993-11-02 2003-11-17 ソニー株式会社 Photoelectric conversion element
JP4278721B2 (en) 1994-09-30 2009-06-17 テキサス インスツルメンツ インコーポレイテツド Zener diode with high reverse breakdown voltage
US5572472A (en) 1995-04-14 1996-11-05 Delco Electronics Corporation Integrated zener-zap nonvolatile memory cell with programming and pretest capability
NO952545D0 (en) 1995-06-23 1995-06-23 Opticon As Procedure for writing data in an optical memory
US5691935A (en) 1995-07-13 1997-11-25 Douglass; Barry G. Memory element and method of operation thereof
US5849403A (en) 1995-09-13 1998-12-15 Kabushiki Kaisha Toshiba Organic thin film device
DE69515876T2 (en) 1995-11-06 2000-08-17 St Microelectronics Srl Power device in MOS technology with low output resistance and capacity and its manufacturing process
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US5734605A (en) 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
DE19640239A1 (en) 1996-09-30 1998-04-02 Siemens Ag Storage cell with polymer capacitor
JP3349638B2 (en) 1996-11-15 2002-11-25 シャープ株式会社 Method and circuit for driving display device
US6461916B1 (en) 1997-03-28 2002-10-08 Hitachi, Ltd. Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device
NO972803D0 (en) * 1997-06-17 1997-06-17 Opticom As Electrically addressable logic device, method of electrically addressing the same and use of device and method
NO304956B1 (en) 1997-07-22 1999-03-08 Opticom As Electrode device without and with a functional element, as well as an electrode device formed by electrode devices with functional element and applications thereof
NO973993L (en) 1997-09-01 1999-03-02 Opticom As Reading memory and reading memory devices
SG77608A1 (en) 1997-10-03 2001-01-16 Inst Data Storage Improvements relating to optical memories using electron trapping material
EP1027723B1 (en) 1997-10-14 2009-06-17 Patterning Technologies Limited Method of forming an electric capacitor
KR100371102B1 (en) 1997-12-04 2003-02-06 엑손 테크놀로지스 코포레이션 Programmable sub-surface aggregating metallization structure and method of making the same
NO306529B1 (en) 1998-01-16 1999-11-15 Opticom As Transistor
EP1051745B1 (en) 1998-01-28 2007-11-07 Thin Film Electronics ASA A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
US6064589A (en) 1998-02-02 2000-05-16 Walker; Darryl G. Double gate DRAM memory cell
US6441395B1 (en) * 1998-02-02 2002-08-27 Uniax Corporation Column-row addressable electric microswitch arrays and sensor matrices employing them
JPH11312393A (en) 1998-02-19 1999-11-09 Sanyo Electric Co Ltd Writing circuit for semiconductor memory
GB2343308B (en) 1998-10-30 2000-10-11 Nikolai Franz Gregor Schwabe Magnetic storage device
US6487106B1 (en) 1999-01-12 2002-11-26 Arizona Board Of Regents Programmable microelectronic devices and method of forming and programming same
US6635914B2 (en) 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
KR20010110433A (en) 1999-02-11 2001-12-13 알란 엠. 포스칸져 Programmable microelectronic devices and methods of forming and programming same
EP1157386B1 (en) 1999-02-12 2006-05-31 Board of Trustees operating Michigan State University Nanocapsules containing charged particles, their uses and methods of forming the same
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6459095B1 (en) 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
FR2792761B1 (en) 1999-04-21 2003-05-23 St Microelectronics Sa DEVICE FOR PROGRAMMING AN ELECTRICALLY PROGRAMMABLE NON-VOLATILE MEMORY
JP4491870B2 (en) 1999-10-27 2010-06-30 ソニー株式会社 Driving method of nonvolatile memory
US6384427B1 (en) 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
DE19959904C2 (en) 1999-12-11 2002-03-14 Edward William Schlag Method and device for controlling an electrical current through biomolecules
NO315728B1 (en) 2000-03-22 2003-10-13 Thin Film Electronics Asa Multidimensional addressing architecture for electronic devices
US7194085B2 (en) 2000-03-22 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US6449184B2 (en) 2000-06-19 2002-09-10 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
US6403397B1 (en) 2000-06-28 2002-06-11 Agere Systems Guardian Corp. Process for fabricating organic semiconductor device involving selective patterning
US7025277B2 (en) 2000-09-25 2006-04-11 The Trustees Of Princeton University Smart card composed of organic processing elements
WO2002035580A2 (en) 2000-10-24 2002-05-02 Molecular Electronics Corporation Three-terminal field-controlled molecular devices
JP2004513513A (en) 2000-10-31 2004-04-30 ザ　リージェンツ　オブ　ザ　ユニバーシティ　オブ　カリフォルニア Organic bistable device and organic memory cell
NO20005980L (en) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelectric memory circuit and method of its manufacture
JP4667594B2 (en) 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 Thin film magnetic memory device
JP2002230982A (en) 2001-02-01 2002-08-16 Mitsubishi Electric Corp Non-volatile semiconductor memory
US6407953B1 (en) 2001-02-02 2002-06-18 Matrix Semiconductor, Inc. Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays
US6919633B2 (en) 2001-03-07 2005-07-19 Hewlett-Packard Development Company, L.P. Multi-section foldable memory device
US6618295B2 (en) 2001-03-21 2003-09-09 Matrix Semiconductor, Inc. Method and apparatus for biasing selected and unselected array lines when writing a memory array
DE60220912T2 (en) 2001-05-07 2008-02-28 Advanced Micro Devices, Inc., Sunnyvale MEMORY DEVICE WITH A SELF-INSTALLING POLYMER AND METHOD FOR THE PRODUCTION THEREOF
AU2002340793A1 (en) 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
KR100885276B1 (en) 2001-05-07 2009-02-23 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Floating gate memory device using composite molecular material
DE60130586T2 (en) 2001-08-13 2008-06-19 Advanced Micro Devices, Inc., Sunnyvale CELL

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4652894A (en) * 1980-03-14 1987-03-24 The Johns Hopkins University Electrical organic thin film switching device switching between detectably different oxidation states
US5034192A (en) * 1984-11-23 1991-07-23 Massachusetts Institute Of Technology Molecule-based microelectronic devices
EP0268370A2 (en) * 1986-10-13 1988-05-25 Canon Kabushiki Kaisha Switching device
EP0727822A2 (en) * 1995-02-14 1996-08-21 Canon Kabushiki Kaisha Semiconductor memory device
WO1999004440A1 (en) * 1997-07-14 1999-01-28 Technion Research And Development Foundation Ltd. Microelectronic components and electronic networks comprising dna
WO2002091494A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Switch element having memeory effect
WO2002091496A2 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JURI H KRIEGER ET AL: "Molecular Analogue Memory Cell", FORESIGHT CONFERENCE ON MOLECULAR NANOTECHNOLOGY, XX, XX, 12 November 1998 (1998-11-12), pages 1 - 9, XP002209014 *
KRIEGER Y H: "STRUCTURAL INSTABILITY OF ONE-DIMENSIONAL SYSTEMS AS A PHYSICAL PRINCIPLE UNDERLYING THE FUNCTIONING OF MOLECULAR ELECTRONIC DEVICES", JOURNAL OF STRUCTURAL CHEMISTRY, PLENUM PRESS, NEW YORK, NY, US, vol. 40, no. 4, 1999, pages 594 - 619, XP008005141, ISSN: 0022-4766 *
REED M A ET AL: "MOLECULAR RANDOM ACCESS MEMORY CELL", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 78, no. 23, 4 June 2001 (2001-06-04), pages 3735 - 3737, XP001073300, ISSN: 0003-6951 *

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US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

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US20050116256A1 (en) 2005-06-02
US20020163830A1 (en) 2002-11-07

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