WO2002099531A3 - ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS - Google Patents

ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS Download PDF

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Publication number
WO2002099531A3
WO2002099531A3 PCT/US2002/015694 US0215694W WO02099531A3 WO 2002099531 A3 WO2002099531 A3 WO 2002099531A3 US 0215694 W US0215694 W US 0215694W WO 02099531 A3 WO02099531 A3 WO 02099531A3
Authority
WO
WIPO (PCT)
Prior art keywords
compositions
low
coating compositions
reflective coating
dielectric materials
Prior art date
Application number
PCT/US2002/015694
Other languages
French (fr)
Other versions
WO2002099531A2 (en
Inventor
Rama Puligadda
James E Lamb Iii
Tony D Flaim
Runhui Huang
Xie Shao
Original Assignee
Brewer Science Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brewer Science Inc filed Critical Brewer Science Inc
Priority to JP2003502584A priority Critical patent/JP2004538625A/en
Priority to KR10-2003-7015928A priority patent/KR20040030651A/en
Priority to EP20020729246 priority patent/EP1446700A2/en
Priority to AU2002259251A priority patent/AU2002259251A1/en
Publication of WO2002099531A2 publication Critical patent/WO2002099531A2/en
Publication of WO2002099531A3 publication Critical patent/WO2002099531A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y10T428/31525—Next to glass or quartz

Abstract

Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.
PCT/US2002/015694 2001-06-05 2002-05-14 ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS WO2002099531A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003502584A JP2004538625A (en) 2001-06-05 2002-05-14 Anti-reflective coating composition for low dielectric constant (lowk) dielectric material
KR10-2003-7015928A KR20040030651A (en) 2001-06-05 2002-05-14 ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS
EP20020729246 EP1446700A2 (en) 2001-06-05 2002-05-14 ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS
AU2002259251A AU2002259251A1 (en) 2001-06-05 2002-05-14 Anti-reflective coating compositions for use with low k dielectric materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/874,783 US6670425B2 (en) 2001-06-05 2001-06-05 Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings
US09/874,783 2001-06-05

Publications (2)

Publication Number Publication Date
WO2002099531A2 WO2002099531A2 (en) 2002-12-12
WO2002099531A3 true WO2002099531A3 (en) 2004-06-17

Family

ID=25364567

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/015694 WO2002099531A2 (en) 2001-06-05 2002-05-14 ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS

Country Status (6)

Country Link
US (2) US6670425B2 (en)
EP (1) EP1446700A2 (en)
JP (1) JP2004538625A (en)
KR (1) KR20040030651A (en)
AU (1) AU2002259251A1 (en)
WO (1) WO2002099531A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893684B2 (en) * 2001-06-05 2005-05-17 Brewer Science Inc. Anti-reflective coating compositions for use with low k dielectric materials
US6846612B2 (en) 2002-02-01 2005-01-25 Brewer Science Inc. Organic anti-reflective coating compositions for advanced microlithography
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
JP2004153073A (en) * 2002-10-31 2004-05-27 Renesas Technology Corp Manufacture of semiconductor device
WO2005038878A2 (en) 2003-10-15 2005-04-28 Brewer Science Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
US6933227B2 (en) 2003-10-23 2005-08-23 Freescale Semiconductor, Inc. Semiconductor device and method of forming the same
US7030201B2 (en) * 2003-11-26 2006-04-18 Az Electronic Materials Usa Corp. Bottom antireflective coatings
US8249853B2 (en) * 2006-03-31 2012-08-21 Intel Corporation Exposing device features in partitioned environment
US7833692B2 (en) * 2007-03-12 2010-11-16 Brewer Science Inc. Amine-arresting additives for materials used in photolithographic processes
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
JP2013060477A (en) * 2010-01-27 2013-04-04 Nissan Chem Ind Ltd Composition for formation of insulating film, and insulating film
WO2013163100A1 (en) 2012-04-23 2013-10-31 Brewer Science Inc. Photosensitive, developer-soluble bottom anti-reflective coating material
US10698317B2 (en) * 2018-02-23 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Underlayer material for photoresist

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1682362A1 (en) * 1989-08-21 1991-10-07 Предприятие П/Я Г-4430 Copolymers of 1,4-naphthoquinine and epoxy-dianic resin as a binder for thermostable materials in electric insulation and a method for preparation of theirs
JPH05283560A (en) * 1991-10-04 1993-10-29 Nitto Denko Corp Semiconductor sealing epoxy resin composition and semiconductor device using it
EP0851300A1 (en) * 1996-12-24 1998-07-01 Fuji Photo Film Co., Ltd. Bottom anti-reflective coating material composition and method of forming resist pattern using the same
US5919598A (en) * 1995-08-21 1999-07-06 Brewer Science, Inc. Method for making multilayer resist structures with thermosetting anti-reflective coatings
WO2001015211A1 (en) * 1999-08-26 2001-03-01 Brewer Science Improved fill material for dual damascene processes
US6306459B1 (en) * 1999-06-17 2001-10-23 3M Innovative Properties Company Retroflective article having a colored layer containing reflective flakes and a dye covalently bonded to a polymer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5597868A (en) 1994-03-04 1997-01-28 Massachusetts Institute Of Technology Polymeric anti-reflective compounds
US6103456A (en) 1998-07-22 2000-08-15 Siemens Aktiengesellschaft Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication
KR100465864B1 (en) 1999-03-15 2005-01-24 주식회사 하이닉스반도체 Organic anti-reflective polymer and method for manufacturing thereof
KR100310252B1 (en) 1999-06-22 2001-11-14 박종섭 Organic anti-reflective polymer and method for manufacturing thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1682362A1 (en) * 1989-08-21 1991-10-07 Предприятие П/Я Г-4430 Copolymers of 1,4-naphthoquinine and epoxy-dianic resin as a binder for thermostable materials in electric insulation and a method for preparation of theirs
JPH05283560A (en) * 1991-10-04 1993-10-29 Nitto Denko Corp Semiconductor sealing epoxy resin composition and semiconductor device using it
US5919598A (en) * 1995-08-21 1999-07-06 Brewer Science, Inc. Method for making multilayer resist structures with thermosetting anti-reflective coatings
EP0851300A1 (en) * 1996-12-24 1998-07-01 Fuji Photo Film Co., Ltd. Bottom anti-reflective coating material composition and method of forming resist pattern using the same
US6306459B1 (en) * 1999-06-17 2001-10-23 3M Innovative Properties Company Retroflective article having a colored layer containing reflective flakes and a dye covalently bonded to a polymer
WO2001015211A1 (en) * 1999-08-26 2001-03-01 Brewer Science Improved fill material for dual damascene processes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE CAPLUS [online] COLUMBUS OHIO, USA; KAL'YAN ET AL.: "Protective action of complexing polymers containing hydroxyquinoline groups in neutral media", XP002954787, Database accession no. 1973:480423 *
TR., KISHINEV. POLITEKH. INST., no. 24, 1971, pages 97 - 104 *

Also Published As

Publication number Publication date
US20030004283A1 (en) 2003-01-02
US6670425B2 (en) 2003-12-30
US20020198333A1 (en) 2002-12-26
JP2004538625A (en) 2004-12-24
AU2002259251A1 (en) 2002-12-16
WO2002099531A2 (en) 2002-12-12
KR20040030651A (en) 2004-04-09
US6663916B2 (en) 2003-12-16
EP1446700A2 (en) 2004-08-18

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