WO2002099661A3 - Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device - Google Patents

Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device Download PDF

Info

Publication number
WO2002099661A3
WO2002099661A3 PCT/US2002/017849 US0217849W WO02099661A3 WO 2002099661 A3 WO2002099661 A3 WO 2002099661A3 US 0217849 W US0217849 W US 0217849W WO 02099661 A3 WO02099661 A3 WO 02099661A3
Authority
WO
WIPO (PCT)
Prior art keywords
data
memory device
arrival
capture
accurately aligning
Prior art date
Application number
PCT/US2002/017849
Other languages
French (fr)
Other versions
WO2002099661A2 (en
Inventor
Brian Johnson
Brent Keeth
Troy A Manning
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP02739714A priority Critical patent/EP1407455A2/en
Priority to KR1020037016031A priority patent/KR100596177B1/en
Priority to AU2002312350A priority patent/AU2002312350A1/en
Priority to JP2003502706A priority patent/JP4672978B2/en
Publication of WO2002099661A2 publication Critical patent/WO2002099661A2/en
Publication of WO2002099661A3 publication Critical patent/WO2002099661A3/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14Protection against unauthorised use of memory or access to memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668Details of memory controller
    • G06F13/1694Configuration of memory controller to different memory types
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012Marginal testing, e.g. race, voltage or current testing of timing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093Input synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22Control and timing of internal memory operations
    • G11C2207/2254Calibration

Abstract

A method and apparatus for accurately determining the actual arrival of data at a memory device relative to the write clock to accurately align the start of data capture and the arrival of the data at the memory device is disclosed. The actual time of arrival of data at the inputs to a memory device is determined by sending back-to-back write commands along with the predetermined data pattern to the memory device. The data pattern is stored in a register and any difference between the predicted arrival time of the data and the actual arrival time of the data is determined by logic circuitry. Any determined difference can then be compensated for by delaying the start of the capture of the data at the memory device, thereby accurately aligning the start of the data capture and the arrival of the data at the memory device.
PCT/US2002/017849 2001-06-06 2002-06-06 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device WO2002099661A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP02739714A EP1407455A2 (en) 2001-06-06 2002-06-06 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device
KR1020037016031A KR100596177B1 (en) 2001-06-06 2002-06-06 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device
AU2002312350A AU2002312350A1 (en) 2001-06-06 2002-06-06 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device
JP2003502706A JP4672978B2 (en) 2001-06-06 2002-06-06 Method and apparatus for measuring actual write latency and accurately aligning start of data capture with arrival of data at memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/874,289 2001-06-06
US09/874,289 US6697926B2 (en) 2001-06-06 2001-06-06 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device

Publications (2)

Publication Number Publication Date
WO2002099661A2 WO2002099661A2 (en) 2002-12-12
WO2002099661A3 true WO2002099661A3 (en) 2003-11-13

Family

ID=25363418

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/017849 WO2002099661A2 (en) 2001-06-06 2002-06-06 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device

Country Status (7)

Country Link
US (1) US6697926B2 (en)
EP (1) EP1407455A2 (en)
JP (2) JP4672978B2 (en)
KR (1) KR100596177B1 (en)
CN (1) CN100565481C (en)
AU (1) AU2002312350A1 (en)
WO (1) WO2002099661A2 (en)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791555B1 (en) * 2000-06-23 2004-09-14 Micron Technology, Inc. Apparatus and method for distributed memory control in a graphics processing system
US6941433B1 (en) * 2002-05-22 2005-09-06 Juniper Networks, Inc. Systems and methods for memory read response latency detection
US7133972B2 (en) 2002-06-07 2006-11-07 Micron Technology, Inc. Memory hub with internal cache and/or memory access prediction
US7200024B2 (en) * 2002-08-02 2007-04-03 Micron Technology, Inc. System and method for optically interconnecting memory devices
US7117316B2 (en) * 2002-08-05 2006-10-03 Micron Technology, Inc. Memory hub and access method having internal row caching
US7254331B2 (en) * 2002-08-09 2007-08-07 Micron Technology, Inc. System and method for multiple bit optical data transmission in memory systems
US7149874B2 (en) * 2002-08-16 2006-12-12 Micron Technology, Inc. Memory hub bypass circuit and method
US6820181B2 (en) 2002-08-29 2004-11-16 Micron Technology, Inc. Method and system for controlling memory accesses to memory modules having a memory hub architecture
US7836252B2 (en) * 2002-08-29 2010-11-16 Micron Technology, Inc. System and method for optimizing interconnections of memory devices in a multichip module
US7102907B2 (en) * 2002-09-09 2006-09-05 Micron Technology, Inc. Wavelength division multiplexed memory module, memory system and method
US6934199B2 (en) 2002-12-11 2005-08-23 Micron Technology, Inc. Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency
US7738496B1 (en) 2002-12-31 2010-06-15 Cypress Semiconductor Corporation Device that provides the functionality of dual-ported memory using single-ported memory for multiple clock domains
US7245145B2 (en) * 2003-06-11 2007-07-17 Micron Technology, Inc. Memory module and method having improved signal routing topology
US7120727B2 (en) * 2003-06-19 2006-10-10 Micron Technology, Inc. Reconfigurable memory module and method
US7428644B2 (en) * 2003-06-20 2008-09-23 Micron Technology, Inc. System and method for selective memory module power management
US7107415B2 (en) * 2003-06-20 2006-09-12 Micron Technology, Inc. Posted write buffers and methods of posting write requests in memory modules
US7260685B2 (en) * 2003-06-20 2007-08-21 Micron Technology, Inc. Memory hub and access method having internal prefetch buffers
KR100583951B1 (en) * 2003-07-11 2006-05-26 삼성전자주식회사 Memory system and timing control method thereof
US7389364B2 (en) 2003-07-22 2008-06-17 Micron Technology, Inc. Apparatus and method for direct memory access in a hub-based memory system
US7210059B2 (en) * 2003-08-19 2007-04-24 Micron Technology, Inc. System and method for on-board diagnostics of memory modules
US7133991B2 (en) * 2003-08-20 2006-11-07 Micron Technology, Inc. Method and system for capturing and bypassing memory transactions in a hub-based memory system
US20050050237A1 (en) * 2003-08-28 2005-03-03 Jeddeloh Joseph M. Memory module and method having on-board data search capabilities and processor-based system using such memory modules
US7136958B2 (en) 2003-08-28 2006-11-14 Micron Technology, Inc. Multiple processor system and method including multiple memory hub modules
US7310752B2 (en) 2003-09-12 2007-12-18 Micron Technology, Inc. System and method for on-board timing margin testing of memory modules
US7194593B2 (en) * 2003-09-18 2007-03-20 Micron Technology, Inc. Memory hub with integrated non-volatile memory
US7120743B2 (en) * 2003-10-20 2006-10-10 Micron Technology, Inc. Arbitration system and method for memory responses in a hub-based memory system
US7934057B1 (en) * 2003-12-24 2011-04-26 Cypress Semiconductor Corporation Logic for implementing a dual clock domain read access with predictable timing for bi-directional inputs/outputs
US7330992B2 (en) 2003-12-29 2008-02-12 Micron Technology, Inc. System and method for read synchronization of memory modules
US7246252B1 (en) * 2003-12-31 2007-07-17 Xilinx, Inc. Delay compensation
US7188219B2 (en) * 2004-01-30 2007-03-06 Micron Technology, Inc. Buffer control system and method for a memory system having outstanding read and write request buffers
US7412574B2 (en) * 2004-02-05 2008-08-12 Micron Technology, Inc. System and method for arbitration of memory responses in a hub-based memory system
US7181584B2 (en) * 2004-02-05 2007-02-20 Micron Technology, Inc. Dynamic command and/or address mirroring system and method for memory modules
US7788451B2 (en) * 2004-02-05 2010-08-31 Micron Technology, Inc. Apparatus and method for data bypass for a bi-directional data bus in a hub-based memory sub-system
US7366864B2 (en) 2004-03-08 2008-04-29 Micron Technology, Inc. Memory hub architecture having programmable lane widths
US7257683B2 (en) 2004-03-24 2007-08-14 Micron Technology, Inc. Memory arbitration system and method having an arbitration packet protocol
US7120723B2 (en) 2004-03-25 2006-10-10 Micron Technology, Inc. System and method for memory hub-based expansion bus
US7447240B2 (en) * 2004-03-29 2008-11-04 Micron Technology, Inc. Method and system for synchronizing communications links in a hub-based memory system
US7213082B2 (en) * 2004-03-29 2007-05-01 Micron Technology, Inc. Memory hub and method for providing memory sequencing hints
US6980042B2 (en) * 2004-04-05 2005-12-27 Micron Technology, Inc. Delay line synchronizer apparatus and method
US7590797B2 (en) * 2004-04-08 2009-09-15 Micron Technology, Inc. System and method for optimizing interconnections of components in a multichip memory module
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US7162567B2 (en) * 2004-05-14 2007-01-09 Micron Technology, Inc. Memory hub and method for memory sequencing
US7222213B2 (en) * 2004-05-17 2007-05-22 Micron Technology, Inc. System and method for communicating the synchronization status of memory modules during initialization of the memory modules
US7363419B2 (en) 2004-05-28 2008-04-22 Micron Technology, Inc. Method and system for terminating write commands in a hub-based memory system
US7519788B2 (en) 2004-06-04 2009-04-14 Micron Technology, Inc. System and method for an asynchronous data buffer having buffer write and read pointers
US7310748B2 (en) * 2004-06-04 2007-12-18 Micron Technology, Inc. Memory hub tester interface and method for use thereof
US20060010339A1 (en) * 2004-06-24 2006-01-12 Klein Dean A Memory system and method having selective ECC during low power refresh
US7340668B2 (en) * 2004-06-25 2008-03-04 Micron Technology, Inc. Low power cost-effective ECC memory system and method
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US7346817B2 (en) 2004-08-23 2008-03-18 Micron Technology, Inc. Method and apparatus for generating and detecting initialization patterns for high speed DRAM systems
US6965537B1 (en) * 2004-08-31 2005-11-15 Micron Technology, Inc. Memory system and method using ECC to achieve low power refresh
US7392331B2 (en) * 2004-08-31 2008-06-24 Micron Technology, Inc. System and method for transmitting data packets in a computer system having a memory hub architecture
US20060168407A1 (en) * 2005-01-26 2006-07-27 Micron Technology, Inc. Memory hub system and method having large virtual page size
US8447902B2 (en) * 2005-08-05 2013-05-21 Integrated Device Technology, Inc. Method and apparatus for predictive switching
US7526704B2 (en) * 2005-08-23 2009-04-28 Micron Technology, Inc. Testing system and method allowing adjustment of signal transmit timing
JP5023539B2 (en) * 2006-04-11 2012-09-12 富士通セミコンダクター株式会社 Semiconductor device and signal processing method
US7894289B2 (en) * 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) * 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
JP5188134B2 (en) * 2007-10-03 2013-04-24 キヤノン株式会社 Memory access control device and memory access control method
US7913104B1 (en) * 2007-10-12 2011-03-22 Xilinx, Inc. Method and apparatus for receive channel data alignment with minimized latency variation
KR20110001397A (en) * 2009-06-30 2011-01-06 삼성전자주식회사 Semiconductor memory device for power saving
US8400845B2 (en) * 2011-01-06 2013-03-19 International Business Machines Corporation Column address strobe write latency (CWL) calibration in a memory system
JP6459820B2 (en) * 2015-07-23 2019-01-30 富士通株式会社 Storage control device, information processing device, and control method
KR102536657B1 (en) * 2016-07-12 2023-05-30 에스케이하이닉스 주식회사 Semiconductor device and semiconductor system
CN106547517B (en) * 2016-11-03 2018-11-20 浪潮金融信息技术有限公司 A kind of method and device controlling the waiting time
JP6862951B2 (en) * 2017-03-15 2021-04-21 富士通株式会社 Memory control device, information processing device and memory control method
CN109947868A (en) * 2019-03-22 2019-06-28 晶晨半导体(上海)股份有限公司 A kind of signal display method of storage system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0855653A1 (en) * 1997-01-23 1998-07-29 Hewlett-Packard Company Memory controller with a programmable strobe delay
US5917760A (en) * 1996-09-20 1999-06-29 Sldram, Inc. De-skewing data signals in a memory system
JPH11316706A (en) * 1998-05-07 1999-11-16 Toshiba Corp Data fast transfer synchronous system and data fast transfer synchronizing method
US6041419A (en) * 1998-05-27 2000-03-21 S3 Incorporated Programmable delay timing calibrator for high speed data interface

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5511024A (en) * 1993-06-02 1996-04-23 Rambus, Inc. Dynamic random access memory system
US5953278A (en) * 1996-07-11 1999-09-14 Texas Instruments Incorporated Data sequencing and registering in a four bit pre-fetch SDRAM
JP4090088B2 (en) * 1996-09-17 2008-05-28 富士通株式会社 Semiconductor device system and semiconductor device
US5966343A (en) * 1997-01-02 1999-10-12 Texas Instruments Incorporated Variable latency memory circuit
KR100268429B1 (en) 1997-03-18 2000-11-01 윤종용 Synchronous memory device
US6067606A (en) 1997-12-15 2000-05-23 Intel Corporation Computer processor with dynamic setting of latency values for memory access
US6003118A (en) 1997-12-16 1999-12-14 Acer Laboratories Inc. Method and apparatus for synchronizing clock distribution of a data processing system
US6128748A (en) 1998-03-25 2000-10-03 Intel Corporation Independent timing compensation of write data path and read data path on a common data bus
US6029250A (en) 1998-09-09 2000-02-22 Micron Technology, Inc. Method and apparatus for adaptively adjusting the timing offset between a clock signal and digital signals transmitted coincident with that clock signal, and memory device and system using same
US6108795A (en) * 1998-10-30 2000-08-22 Micron Technology, Inc. Method for aligning clock and data signals received from a RAM
US6101612A (en) * 1998-10-30 2000-08-08 Micron Technology, Inc. Apparatus for aligning clock and data signals received from a RAM
JP2000148656A (en) * 1998-11-09 2000-05-30 Mitsubishi Electric Corp Memory system
US6430696B1 (en) * 1998-11-30 2002-08-06 Micron Technology, Inc. Method and apparatus for high speed data capture utilizing bit-to-bit timing correction, and memory device using same
US6272070B1 (en) * 2000-02-09 2001-08-07 Micron Technology, Inc. Method and apparatus for setting write latency
US6445624B1 (en) * 2001-02-23 2002-09-03 Micron Technology, Inc. Method of synchronizing read timing in a high speed memory system
US6658523B2 (en) * 2001-03-13 2003-12-02 Micron Technology, Inc. System latency levelization for read data

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917760A (en) * 1996-09-20 1999-06-29 Sldram, Inc. De-skewing data signals in a memory system
EP0855653A1 (en) * 1997-01-23 1998-07-29 Hewlett-Packard Company Memory controller with a programmable strobe delay
JPH11316706A (en) * 1998-05-07 1999-11-16 Toshiba Corp Data fast transfer synchronous system and data fast transfer synchronizing method
US6449727B1 (en) * 1998-05-07 2002-09-10 Kabushiki Kaisha Toshiba High-speed data transfer synchronizing system and method
US6041419A (en) * 1998-05-27 2000-03-21 S3 Incorporated Programmable delay timing calibrator for high speed data interface

Also Published As

Publication number Publication date
US6697926B2 (en) 2004-02-24
WO2002099661A2 (en) 2002-12-12
US20020188816A1 (en) 2002-12-12
JP2004529453A (en) 2004-09-24
AU2002312350A1 (en) 2002-12-16
JP4672978B2 (en) 2011-04-20
JP5044805B2 (en) 2012-10-10
CN100565481C (en) 2009-12-02
JP2009104651A (en) 2009-05-14
KR20040016881A (en) 2004-02-25
KR100596177B1 (en) 2006-07-03
CN1636196A (en) 2005-07-06
EP1407455A2 (en) 2004-04-14

Similar Documents

Publication Publication Date Title
WO2002099661A3 (en) Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device
WO2008079910A3 (en) Strobe acquisition and tracking
WO2003046723A3 (en) Method of replicating data between computing devices which each use local clocks
US8098535B2 (en) Method and apparatus for gate training in memory interfaces
EP1381053A3 (en) Device and method for selecting power down exit
WO2008130703A8 (en) Clock synchronization in a memory system
DE60315165D1 (en) METHOD AND DEVICE FOR ADJUSTING AND COMPENSATING READING DATA IN A HIGH-SPEED DRAM
MY121171A (en) Cycle independent data to echo clock tracking circuit.
WO2002015195A3 (en) Method and apparatus for controlling a read valid window of a synchronous memory device
KR20060101334A (en) Memory interface control circuit
WO2002069344A3 (en) Method and apparatus for forcing idle cycles to enable refresh operations in a semiconductor memory
WO2005121961A3 (en) Memory hub tester interface and method for use thereof
ATE367608T1 (en) INTEGRATED CIRCUIT WITH BIMODAL DATA STROBE
WO2007038033A3 (en) Method and apparatus for late timing transition detection
TW200636743A (en) Apparatus and method for latency control in high frequency synchronous semiconductor device
US6445643B2 (en) Method and apparatus for setting write latency
WO2005038864A3 (en) Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
WO2007053414A3 (en) Method and apparatus for adjustment of synchronous clock signals
WO2005041055A3 (en) Echo clock on memory system having wait information
WO2004017222A3 (en) Programmable pipeline fabric having mechanism to terminate signal propagation
WO2002061754A1 (en) Semiconductor memory and method for entering its operation mode
WO2003042849A3 (en) Method and apparatus for read launch optimizations in memory interconnect
GB2426095B (en) Methods, circuits, and systems for utilizing idle time in dynamic frequency scaling cache memories
TWI460727B (en) Data input device for semiconductor memory device and method thereof
WO2001073540A3 (en) METHOD AND APPARATUS FOR TIMING-DEPENDENT TRANSFERS USING FIFOs

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020037016031

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2003502706

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2002739714

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20028153650

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2002739714

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642