WO2003000961A8 - Dispositif de fabrication de cristaux d'alliage - Google Patents

Dispositif de fabrication de cristaux d'alliage

Info

Publication number
WO2003000961A8
WO2003000961A8 PCT/FR2002/002192 FR0202192W WO03000961A8 WO 2003000961 A8 WO2003000961 A8 WO 2003000961A8 FR 0202192 W FR0202192 W FR 0202192W WO 03000961 A8 WO03000961 A8 WO 03000961A8
Authority
WO
WIPO (PCT)
Prior art keywords
zone
furnace
production device
crystal production
alloy crystal
Prior art date
Application number
PCT/FR2002/002192
Other languages
English (en)
Other versions
WO2003000961A2 (fr
WO2003000961A3 (fr
Inventor
Gerard Petroz
Original Assignee
Commissariat Energie Atomique
Gerard Petroz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Gerard Petroz filed Critical Commissariat Energie Atomique
Priority to EP02758518A priority Critical patent/EP1399606B1/fr
Priority to US10/482,268 priority patent/US7048799B2/en
Priority to DE60205904T priority patent/DE60205904T2/de
Publication of WO2003000961A2 publication Critical patent/WO2003000961A2/fr
Publication of WO2003000961A3 publication Critical patent/WO2003000961A3/fr
Publication of WO2003000961A8 publication Critical patent/WO2003000961A8/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Le dispositif de l'invention comprend un four (10) pourvu de moyens de chauffage permettant de rendre liquide le matériau à cristalliser puis de le refroidir jusqu'à obtenir progressivement sa solidification. Le dispositif comprend aussi des moyens de réception (20) du matériau (21) disposés dans le four, fixes par rapport au four et situés de façon que le matériau se trouve dans la zone intermédiaire. Les moyens de chauffage (11, 12, 13) fournissent trois zones de chauffage: une zone chaude (16), une zone intermédiaire (15) et une zone froide (14). Des moyens thermiquement conducteurs (17) sont disposés entre les moyens de réception (20) et les moyens de chauffage (11, 12, 13) et s'étendent depuis la zone froide jusqu'à la zone chaude.
PCT/FR2002/002192 2001-06-26 2002-06-25 Dispositif de fabrication de cristaux d'alliage WO2003000961A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02758518A EP1399606B1 (fr) 2001-06-26 2002-06-25 Dispositif de fabrication de cristaux d'alliage
US10/482,268 US7048799B2 (en) 2001-06-26 2002-06-25 Device for producing alloy crystals by cooling and controlled solidification of a liquid material
DE60205904T DE60205904T2 (de) 2001-06-26 2002-06-25 Vorrichtung zur herstellung von legierungskristallen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR01/08402 2001-06-26
FR0108402A FR2826377B1 (fr) 2001-06-26 2001-06-26 Dispositif de fabrication de cristaux d'alliage par refroidissement et solidification controlee d'un materiau liquide

Publications (3)

Publication Number Publication Date
WO2003000961A2 WO2003000961A2 (fr) 2003-01-03
WO2003000961A3 WO2003000961A3 (fr) 2003-10-02
WO2003000961A8 true WO2003000961A8 (fr) 2004-04-01

Family

ID=8864769

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2002/002192 WO2003000961A2 (fr) 2001-06-26 2002-06-25 Dispositif de fabrication de cristaux d'alliage

Country Status (5)

Country Link
US (1) US7048799B2 (fr)
EP (1) EP1399606B1 (fr)
DE (1) DE60205904T2 (fr)
FR (1) FR2826377B1 (fr)
WO (1) WO2003000961A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004111540A2 (fr) * 2003-06-11 2004-12-23 Huntington Alloys Corporation Four a de zones de chauffage multiples et procede d'elimination des contraintes sur un superalliage
CN1307329C (zh) * 2004-06-30 2007-03-28 哈尔滨工业大学 晶体的可视化小角度倾斜温梯冷凝生长装置及其生长方法
CN1306073C (zh) * 2004-12-22 2007-03-21 哈尔滨工业大学 晶体的可视小角度倾斜区熔生长装置及其生长方法
WO2014035480A1 (fr) 2012-08-30 2014-03-06 General Electric Company Four à induction doté d'une capacité de refroidissement uniforme

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264406A (en) * 1979-06-11 1981-04-28 The United States Of America As Represented By The Secretary Of The Army Method for growing crystals
EP0078830B1 (fr) * 1981-05-15 1985-11-06 Philips Electronics Uk Limited Procede de formation de tellurure de mercure de cadmium cristallin et tellurure de mercure de cadmium cristallin forme a l'aide de cette methode
US4980433A (en) * 1983-10-26 1990-12-25 Betz Laboratories, Inc. Novel amine-containing copolymers and their use
US4980133A (en) * 1988-03-16 1990-12-25 Ltv Aerospace & Defense Company Apparatus comprising heat pipes for controlled crystal growth
JP2717568B2 (ja) * 1989-02-21 1998-02-18 株式会社フューテックファーネス 単結晶育成装置
JP4228439B2 (ja) * 1998-11-12 2009-02-25 住友電気工業株式会社 結晶製造装置

Also Published As

Publication number Publication date
EP1399606A2 (fr) 2004-03-24
DE60205904T2 (de) 2006-06-22
WO2003000961A2 (fr) 2003-01-03
EP1399606B1 (fr) 2005-08-31
US7048799B2 (en) 2006-05-23
US20040244679A1 (en) 2004-12-09
DE60205904D1 (de) 2005-10-06
FR2826377A1 (fr) 2002-12-27
FR2826377B1 (fr) 2003-09-05
WO2003000961A3 (fr) 2003-10-02

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