WO2003004155A1

WO2003004155A1 - Carbon nanotube catalyst material, carbon nanotube arrangement and method for producing a carbon nanotube arrangement

Info

Publication number: WO2003004155A1
Application number: PCT/DE2002/002426
Authority: WO
Inventors: Andrew Graham; Franz Kreupl
Original assignee: Infineon Technologies Ag
Priority date: 2001-07-06
Filing date: 2002-07-03
Publication date: 2003-01-16
Also published as: DE10132787A1

Abstract

The invention relates to a carbon nanotube catalyst material, a carbon nanotube arrangement and to a method for producing a carbon nanotube arrangement. The carbon nanotube catalyst material for catalyzing the epitaxial growth of carbon nanotubes on the carbon nanotube catalyst material comprises iron, at least one additional material, which is selected among chrome, nickel, cobalt, platinum or palladium, and carbon.

Description

description

Carbon nanotube catalyst material,

Carbon nanotube assembly and method of making a carbon nanotube assembly

The invention relates to a carbon nanotube catalyst material, a carbon nanotube arrangement and a method for producing a carbon nanotube arrangement.

Conventional silicon microelectronics will reach its limits as the scale continues to decrease. In particular, the development of increasingly smaller and more densely arranged transistors, which now has several hundred million transistors per chip, will be exposed to fundamental physical problems and limitations in the next ten years. If the structural dimensions fall below 80 nanometers, the components are disrupted by quantum effects and dominated below dimensions of about 30 nanometers. The increasing integration density of the components on a chip also leads to a dramatic increase in waste heat.

As a possible successor to the conventional

Semiconductor electronics are known carbon nanotubes. An overview of this technology is given, for example, [1]. A nanotube is a single-walled or multi-walled, tube-like carbon compound. In multi-walled nanotubes, at least one inner nanotube is coaxially surrounded by an outer nanotube. Single-walled nanotubes typically have a diameter of approximately one nanometer, and the length of a nanotube can be several hundred nanometers. The ends of a nanotube are often terminated with half a fullerene olecule part. The extensive π-electron system and the geometric structure of nanotubes result in good electrical conductivity, which is why nanotubes are suitable for the construction of circuits with dimensions in the nanometer range. It is known from [2] that the electrical conductivity of carbon nanotubes can significantly exceed that of metals of the same size.

Due to the electrical conductivity of nanotubes and the adjustability of this conductivity

(For example, by applying an external electric field or by doping the nanotubes with boron nitride), nanotubes are suitable for a large number of applications, for example for electrical connection technology in integrated circuits, for components in microelectronics and as an electron emitter.

For the use of nanotubes in microelectronics, it is often desirable to apply the nanotubes in a defined manner to specific locations on a substrate. For example, nanotubes can be used as electrical conductors in order to couple two conductor levels of a microcircuit element that are electrically separated from one another. For this it is necessary that nanotubes are only grown where an appropriate electrical coupling is desired, whereas the other areas of the substrate should remain free of nanotubes in order to avoid electrical short circuits.

In order to achieve this goal, it is known to apply a material which catalyzes the growth of nanotubes, for example iron, to a substrate, nanotubes being grown on the catalytically active material.

A method for producing large-area, structured carbon nanotube arrangements is known from [3]. The manufacturing process is based on the CVD process ("Chemical Vapor Deposition"), where iron material is applied as a catalytically active material in a thickness of 10-100 angstroms. In order to achieve a structured arrangement of carbon nanotubes, the catalyst film is treated with a suitable photolithography and etching process The growth of carbon nanotubes is set in motion by acetylene in a process space According to the method described in [3], the substrate is to be kept at a temperature of approximately 700 ° C. during the growth process of the nanotubes, which is a high process temperature of approximately 700 ° C. It is also disadvantageous that the nanotubes produced in accordance with the method have only a moderate quality, ie can have defects, are often not straightforward and do not have a high degree of order.

[4] describes a method for producing single and free-standing multi-walled carbon nanotubes on a layer of catalyst material made of nickel, the nickel layer using the

Electron beam evaporation (Electron Beam Evaporation) is then discontinued. Using the plasma-enhanced CVD (Plasma Enhanced Chemical Vapor Deposition) (PECVD) process, the growth of the carbon nanotubes is then carried out with acetylene at a process temperature of approximately 660 ° C Gear set. According to the method described in [4], a relatively high temperature of approximately 660 ° C. is required when growing the nanotubes. The quality of the nanotubes obtained according to the process is also moderate. Furthermore, according to the method, it is not possible to grow on electrically conductive substrates if the carbon nanotubes are to have a sufficiently good quality. This makes it difficult to connect the nanotubes to conventional silicon microelectronics. A catalyst made from an alloy of transition metals for heterogeneous catalysis is known from [5].

[6] discloses a hard metal coating composition for a tool.

A catalyst material for nanostructures is known from [7], which has several metal components.

[8] describes the use of nickel as a catalyst material for carbon nanotubes.

In [9] it is disclosed to use a catalyst material such as nickel, cobalt, rhodium and palladium for growing carbon nanotubes.

The invention is based on the problem of creating a catalyst material with improved connectivity to carbon nanotubes.

The problem is solved by a carbon nanotube catalyst material, a carbon nanotube arrangement and a method for producing a carbon nanotube arrangement with the features according to the independent patent claims.

The catalyst material according to the invention for catalyzing the growth of carbon nanotubes on the catalyst material has iron, at least one further material which catalytically supports the growth of carbon nanotubes, and carbon.

The at least one further material which catalytically supports the growth of carbon nanotubes denotes a material which alone, ie monocomponent, catalyzes the growth of carbon nanotubes. For example, this can be from the prior art Technique known monocomponent catalyst such as nickel.

The further material is preferably one of the materials chromium, nickel, cobalt, platinum or palladium. The catalyst material is preferably an alloy in the composition FeχCr _y C _z Niι-χ-y- _z , where x> 0.335, 0.09 <y <0.27, 0.04 <z <0.12 and 0.035 <lxyz <0, 105. The composition of the catalyst material is preferably Feo, 67Cro, i8Co, o8Nio, o7 / ie the catalyst material is preferably composed of 67 atomic percent iron, 18 atomic percent chromium, 8 atomic percent carbon and 7 atomic percent nickel.

With the catalyst material of the invention

Catalyzing the growth of carbon nanotubes on the catalyst material provides an inexpensive and readily available material that is highly effective as a catalyst for growing carbon nanotubes. The individual components of the catalyst material - iron,

Carbon and at least one other material that is catalytically active for the growth of carbon nanotubes, such as chromium, nickel, cobalt, platinum or palladium - are all commercially available and inexpensive.

As stated above, it is not important to provide the individual components of the catalyst material of the invention in a stoichiometrically exact concentration. Although the composition with 67 atomic percent iron, 18 atomic percent chromium, 8 atomic percent carbon and 7

Atomic percent nickel provides particularly good catalyst properties, the contributions of the individual components can vary about 50% around the specified values, without the good catalyst properties of the material being lost. The individual contributions of the components can therefore spread over a wide range. Therefore, no increased care is required when mixing the individual components, what enables inexpensive production of the catalyst material according to the invention.

A carbon nanotube arrangement according to the invention has a substrate, an intermediate layer applied to at least part of the substrate and a catalyst material layer for catalyzing the growth of carbon nanotubes on the catalyst material layer. The catalyst material layer has iron, at least one other material, which is the growth of

Carbon nanotubes are supported catalytically and carbon is applied, and the catalyst material layer is arranged on at least part of the intermediate layer.

The carbon nanotube arrangement according to the invention, which has the catalyst material according to the invention, is described in more detail below. Refinements of the catalyst material also apply to the carbon nanotube arrangement.

The intermediate layer is preferably made of an electrically conductive material. The intermediate layer can in particular be produced from one or a combination of the materials silicon, silicon dioxide, aluminum oxide, tantalum, tantalum nitride, titanium and titanium nitride. Therefore, the intermediate layer can be made of either an electrically conductive material such as silicon, tantalum, tantalum nitride, titanium or titanium nitride. The intermediate layer can also be made of an electrically insulating material such as silicon dioxide or aluminum oxide.

According to the invention, it is therefore possible to produce nanotubes on electrically conductive substrates. In other words, with the carbon nanotube arrangement

Possibility created to apply the catalyst material on an electrically conductive layer and thereon To grow carbon nanotubes. As stated above, this is not possible according to the prior art. Alternatively, however, it is also possible to produce the intermediate layer from an electrically insulating material in the carbon nanotube arrangement according to the invention. Therefore, the base of the catalyst layer can be flexibly adjusted to the needs of the individual case, which is why the carbon nanotube arrangement is suitable for many applications. However, it should be emphasized that the possibility in particular of being able to apply a catalyst layer for growing carbon nanotubes to an electrically conductive base opens up a wide range of possible uses for the carbon nanotube arrangement. As explained above, carbon nanotubes are suitable for molecular electronic applications.

For example, carbon nanotubes can be used as electrical conductors, sensor elements or switching elements with dimensions in the nanometer range. However, the use of carbon nanotubes as molecular electronic components presupposes that the carbon nanotubes can be electrically coupled to conventional silicon microelectronics, the nanotubes then being able to be controlled or read out by a connected silicon microelectronics. This in turn presupposes an electrical contact between the microelectronics and the nanotubes. The growth according to the invention of nanotubes on catalyst layers which are arranged on electrically conductive substrates is an advance in terms of the goal of coupling the carbon nanotube technology to the conventional silicon microelectronics.

The method for producing a carbon nanotube arrangement is described below, which refers to the catalyst material according to the invention.

Refinements of the catalyst material also apply to the Method of making a carbon nanotube assembly.

According to the method according to the invention for producing a carbon nanotube arrangement, an intermediate layer is applied to at least part of a substrate, and a catalyst material layer for catalyzing the growth of carbon nanotubes on the catalyst material layer is applied to at least a part of the intermediate layer. The angry one

The catalyst material layer has iron, at least one further material which catalytically supports the growth of carbon nanotubes, and carbon. In a further process step, carbon nanotubes are grown on the catalyst material layer.

The intermediate layer is preferably made of an electrically conductive material. The intermediate layer can be made of one or a combination of the materials silicon,

Tantalum, tantalum nitride, titanium and / or titanium nitride can be produced. Alternatively, however, the intermediate layer can also be produced from an electrically insulating material, such as silicon dioxide or aluminum oxide (Al ₂ O ₃ ).

In the method for producing a carbon nanotube arrangement, too, the further material which catalytically supports the growth of carbon nanotubes can be chromium, nickel, cobalt, platinum or palladium. The composition Fe _x Cr _y C _z Niι- _x -y- _{z is} particularly advantageous if x> 0, 335, 0.09 <y <0.27, 0, 04 <z≤0, 12 and 0, 035 <lxyz≤0, 105. According to a preferred embodiment, the composition is

Feo, 67Cro, i8Co, θ8Nio, θ7 • The catalyst material layer is applied, for example, by means of molecular beam epitaxy (MBE) or by means of cathode sputtering (sputtering).

According to the invention, the catalyst layer on the

Intermediate layer applied by means of molecular beam epitaxy, several individual component material sources are used in the molecular beam epitaxy method, the individual materials of the material sources then mixing on the surface of the intermediate layer, so that a layer of the catalyst material according to the invention is deposited on the surface of the intermediate layer. The single-component material sources are set up in such a way that the catalyst material deposited on the intermediate layer has the desired atomic percentages of iron, carbon and the at least one further material which catalytically supports the growth of carbon nanotubes.

Alternatively, the catalyst material layer can be applied to the intermediate layer by means of sputtering. If this option is selected, the sputter deposition is carried out from a sputter target that contains the components of the catalyst material layer in the correct amounts. An advantage of the invention comes into play here that not a stoichiometrically exact one

Composition of the individual components is required, but that the individual contributions of the elements of the catalyst material layer can scatter in a wide range of approximately ± 50%, while the very good catalyst properties of the catalyst material are retained in the entire range described.

In a further process step, carbon nanotubes are grown on the catalyst material layer, the carbon nanotubes preferably being deposited from the gas phase, ie using the CVD process (“Chemical Vapor Deposition”). The growth of the carbon nanotubes on the catalyst material layer can be realized, for example, by adding one or a combination of the materials acetylene, methane, ethene and / or acetone into the

Proceedings will be initiated. Prior to this, the intermediate layer is preferably heated to about 600 ° C under a hydrogen atmosphere for about 5 minutes. The hydrogen atmosphere and the heating promote the formation of catalytically active particles on the surface of the intermediate layer or remove an oxide layer possibly located on the surface of the catalyst layer. The actual growth of the carbon nanotubes on the catalyst layer can then be carried out at temperatures of significantly less than 600 ° C., for example at 500 ° C.

The method according to the invention for producing a carbon nanotube arrangement has a number of advantages. For example, the process temperatures during the growth of the carbon nanotubes are reduced compared to the prior art. In addition, carbon nanotubes of a very high quality are formed in the production of a carbon nanotube arrangement according to the inventive method. The grown nanotubes have only a few defects, grow straight on the catalyst material layer, and single-wall nanotubes can be produced. A high degree of structural definition of grown nanotubes is a crucial prerequisite for the ability to connect nanotubes to conventional silicon microelectronics. It is a further advantage of the method according to the invention for producing a carbon nanotube arrangement that there is a high degree of flexibility with regard to the choice and the composition of the materials. Both the composition and the type of materials can be so be chosen that this is favorable for a particular application. Also, the exact composition of the materials does not have to be chosen exactly; rather, the atomic percentages can vary within a wide range of approximately ± 50%. Inexpensive production is therefore possible. It is a further advantage of the method according to the invention for producing a carbon nanotube arrangement that the method has simple standard process steps that can be carried out on standardized machines, as are available in many semiconductor technology laboratories and factories. It is therefore unnecessary to develop expensive machines and / or processes. It should also be emphasized again that the catalyst material layer can be applied to an intermediate layer, which can optionally be produced from an electrically insulating or an electrically conductive material. In particular, the option of forming the intermediate layer from an electrically conductive material enables the nanotubes to be electrically coupled, for example to conventional silicon microelectronics. Furthermore, the above-mentioned high degree of flexibility regarding the materials is not due to the materials of the

Limited catalyst material layer. There is also largely freedom of disposition with regard to the materials for the intermediate layer and the materials as a carbon source for growing the nanotubes.

Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

Show it:

FIG. 1 shows a cross-sectional view of a carbon nanotube arrangement according to a preferred exemplary embodiment of the invention, 2A shows a cross-sectional view of a layer arrangement at a first point in time during the production method according to a preferred exemplary embodiment of the method according to the invention for producing a carbon nanotube arrangement,

FIG. 2B shows a cross-sectional view of a layer arrangement at a second point in time during the production method according to the preferred exemplary embodiment of the method according to the invention for producing a carbon nanotube arrangement,

Figure 2C is a cross-sectional view of a layer arrangement at a third time during the manufacturing process according to the preferred

Embodiment of the method according to the invention for producing a carbon nanotube arrangement.

1, a preferred exemplary embodiment of the invention is described below

Carbon nanotube arrangement described. The carbon nanotube arrangement 100 shown in FIG. 1 has a substrate 101, an intermediate layer 102 applied to at least a part of the substrate 101 and a catalyst layer 103 for catalyzing the growth of carbon nanotubes on the catalyst material layer 103, the catalyst material layer 103 Iron has 67 atomic percent, chromium to 18 atomic percent, carbon to 8 atomic percent and nickel to 7 atomic percent. As shown in FIG. 1, the catalyst material layer 103 is arranged on a part of the intermediate layer 102.

According to the exemplary embodiment of the carbon nanotube arrangement described, the substrate 101 is a silicon wafer. The intermediate layer 102 is made of the electrically conductive material tantalum. As shown in FIG. 1, the catalyst material layer 103 is on The intermediate layer 102 is arranged and has four sections.

1 also shows carbon nanotubes 104 which have been grown on the surface of the catalyst material layer 103. Since carbon nanotubes 104 preferably grow on catalytically active materials, with reference to FIG. 1, the carbon nanotubes 104 have grown exclusively on those surface regions of the carbon nanotube arrangement 100 that are covered with the catalyst material layer 103. On the other hand, on those surface areas of the carbon nanotube arrangement 100 that are not covered with the catalyst material layer 103 but on which the intermediate layer 102 is exposed in certain areas are not covered with carbon nanotubes 104. The described property of carbon nanotubes 104 of selectively growing on certain catalytically active materials makes it possible according to the invention to provide a carbon nanotube arrangement 100 with a high degree of structural

Obtain definiteness of the carbon nanotubes 104. The carbon nanotubes 104 are single-walled and have grown out of the surface of the catalyst material layer 103 essentially in a straight line.

A preferred exemplary embodiment of the method for producing a carbon nanotube arrangement of the invention is described below with reference to FIGS. 2A, 2B, 2C.

In a first method step, an aluminum oxide layer is applied as an intermediate layer 202 to at least part of a silicon wafer as the substrate 201.

The layer arrangement 200 shown in FIG. 2A is thereby obtained. In a second method step, a catalyst material layer 203 for catalyzing the growth of carbon nanotubes on the

Catalyst material layer 203 applied to at least part of the intermediate layer 202, the catalyst material layer 203 having iron, at least one further material which catalytically supports the growth of carbon nanotubes, and carbon.

After this second method step, the layer arrangement 204, which is shown in FIG. 2B, is obtained. According to the described exemplary embodiment of the method according to the invention for producing a carbon nanotube arrangement, the catalyst material layer 203 with three subsections is on the intermediate layer

202 applied. The described process section usually has several sub-steps in practical implementation.

In a first sub-step, according to the exemplary embodiment of the method according to the invention for producing a carbon nanotube arrangement described, a continuous layer of catalyst material is applied to the surface of the intermediate layer 202. The

Catalyst material layer 203 has the composition Fe _0, 67Cro, i8Co, o8 io, o7, ie the catalyst material layer

203 is made from 67 atomic percent iron, 18 atomic percent chrome, 8 atomic percent carbon, and 7 atomic percent nickel. The catalyst material of the described

Composition is applied to the surface of the intermediate layer 202 using the molecular beam epitaxy (MBE) method. In the case of the molecular beam epitaxy method, the substrate to be covered with a layer is heated in a process chamber, in order, if appropriate, to be deposited on the

Remove oxide films located on the surface of the substrate. The material to be deposited on the substrate surface or the materials to be deposited on the substrate surface are vaporized in the molecular beam epitaxy method by an electron beam directed onto a material source and are deposited on the surface of the heated substrate. According to the described embodiment of the method for producing a carbon nanotube assembly is a four-component catalyst layer Fe ₀ ₀ 67Cr, i8Co, o8Nio applied θ7 on the surface of the intermediate layer made of alumina on the substrate 202, two hundred and first This is realized according to the invention by carrying out the molecular beam epitaxy process with four individual component material sources (iron, chromium, carbon, nickel). For this purpose, four material sources are made in a process chamber, the first of which is made of iron material, the second of which is made of chrome material, the third of which is made of carbon material and the fourth of which is made of nickel material is irradiated with an electron beam in a high vacuum. As a result, atoms of the respective material evaporate independently of one another from the surfaces of the four material sources described. These atoms of the four materials are deposited on the surface of the heated substrate 201 covered with an intermediate layer 202 made of aluminum oxide. In other words, the four individual components mix in an adjustable composition on the surface of the intermediate layer 202 in order to form a continuous layer thereon from the catalyst material according to the invention.

As an alternative to the molecular beam epitaxy method, the continuous layer of the catalyst material could be deposited on the intermediate layer 202 made of aluminum oxide on the substrate 201 using the sputtering method (sputtering method). In the sputtering process, strongly accelerated ions come out of one

Sputter target, which contains the material to be deposited, atoms or molecules. These molecules accumulate the surface of the substrate 201 covered with the intermediate layer 202. To remove the material from the sputtering target, ions (for example argon ions generated by a gas discharge) are accelerated towards the sputtering target in an electrical field. The accelerated argon ions transfer their energy to the target material by impact and thereby release material. The target layer is thus atomized and the released material is deposited on the substrate 201 covered with the intermediate layer 202. In order to achieve a desired according to the invention

To realize the composition of the catalyst material layer 203 on the intermediate layer 202, a sputtering target is used when using the cathode sputtering method, which contains the components of the catalyst material layer 203 in the correct amounts. To one

To obtain the catalyst material layer Feo, 67Cro, i8Co, o8 io, o7, a target with 67 atomic percent iron, 18 atomic percent chromium, 8 atomic percent carbon and 7 atomic percent nickel is used as the sputtering target. It should be noted that the values given can vary within a wide range of ± 50%, i.e. For the catalytic effect of the catalyst material layer, it is not necessary to mix the individual components in exactly the right amounts.

After the first sub-step of the second process section leading to the layer arrangement 204 (see FIG. 2B) has been carried out, in which a continuous layer of the catalyst material has been deposited on the surface of the intermediate layer 202 by molecular beam epitaxy or sputtering, the continuous catalyst material layer is closed pattern to obtain the layer arrangement 204 shown in FIG. 2B. Structuring the previous continuous catalyst material layer such that, as shown in FIG. 2B, three

Surface sections of the intermediate layer 202 are covered with the catalyst material layer 203 in accordance with the described embodiment of the method for producing a carbon nanotube arrangement by using a suitable lithography and etching method. The layer arrangement 204 shown in FIG. 2B is thereby obtained.

In a third stage of the procedure

Carbon nanotubes 205 on the catalyst material layer

203 grew up.

The carbon nanotube arrangement 206 shown in FIG. 2C is thereby obtained. According to the carbon nanotube arrangement 206 shown in FIG. 2C, carbon nanotubes 205 are grown on each of the three partial regions of the catalyst material layer 203. The third method section also has several subsections. In a first section, the substrate 201 with the intermediate layer 202 arranged thereon and the catalyst material layer 203 arranged thereon is heated to about 600 ° C. in a hydrogen flow for about five minutes. This removes, among other things, an oxide layer possibly located on the surface of the layer arrangement 204. In a further sub-step, acetylene (C ₂ H ₂ ) is then introduced in gaseous form as a carbon source in a CVD process chamber in order to prevent the growth of

To initiate carbon nanotubes 205 on the catalyst material layer 203. This is implemented using the gas phase epitaxy process, which is also referred to as CVD (“Chemical Vapor Deposition”) process. Because of the temperature in the process chamber of less than 600 ° C. (for example 500 ° C.), this is The carbon material contained in the acetylene gas is then deposited on the surface of the layer arrangement 204, preferably on those surface regions of the layer arrangement 204 which are in contact with the catalyst material layer 203 are covered. As a result, carbon nanotubes 205 grow on the catalyst material layer 203.

In the manner described, the carbon nanotube arrangement 206 shown in FIG. 2C is obtained, which essentially corresponds to the carbon nanotube arrangement 100 shown in FIG. 1.

The following publications are cited in this document:

[1] Harris, PJF (1999) "Carbon Nanotubes and Related

Structures - New Materials for the Twenty-First Century. "., Cambridge University Press, Cambridge, pp.

1 to 15, 111 to 155

[2] Dekker, C et al. (1999) "Carbon Nanotubes as Molecular Quantum Wires", Physics Today 5/99: 22-28

[3] Xu, X et al. (1999) "A method for fabricating large-area, patterned, carbon nanotube field emitters" Applied Physics Letters 74 (17): 2549-2551

[4] Ren, ZF et al. (1999) "Growth of a Single freestanding multiwall carbon nanotube on each nanonickel dot" Applied Physics Letters 75 (8): 1086-1088

[5] DE 690 14 628 T2

[6] DE 1959 283 A

[7] US 5,653,951

[8] JP 2000321292 A

[9] JP 10273308

LIST OF REFERENCE NUMBERS

100 carbon nanotube assembly

101 substrate

102 intermediate layer

103 catalyst material layer

104 carbon nanotubes

200 layer arrangement

201 substrate

202 intermediate layer

203 catalyst material layer

204 layer arrangement

205 carbon nanotubes

206 carbon nanotube arrangement

Claims

claims

1. Carbon nanotube catalyst material for catalyzing the growth of carbon nanotubes on the carbon nanotube catalyst material

• with iron;

With at least one further material which catalytically supports the growth of carbon nanotubes; and • with carbon.

2. Carbon nanotube catalyst material according to claim 1, wherein the further material is one of the following materials:

chrome

nickel

cobalt

Platinum or

Palladium.

3. Carbon nanotube catalyst material according to claim 1 or 2 with the composition Fe _x Cr _y C _z Niι-χ-y- _z , wherein

X> 0.335; • 0.09 <y <0.27;

0.04 <z <0.12;

• 0.035 <1-x-y-z <0.105.

4th Carbon nanotube catalyst material according to one of claims 1 to 3 with the composition Fe ₀ , 67C ₀ , i8Co, θ8Nio, o7 •

5. Carbon nanotube arrangement with

• a substrate; An intermediate layer applied to at least part of the substrate;

A carbon nanotube catalyst material layer for catalyzing the growth of carbon nanotubes on the carbon nanotube catalyst material layer, the carbon nanotube catalyst material layer o iron; o at least one other material that catalytically supports the growth of carbon nanotubes; and o has carbon; o and where the carbon nanotubes

Catalyst material layer is arranged on at least part of the intermediate layer.

6. Carbon nanotube arrangement according to claim 5, wherein the intermediate layer is made of an electrically conductive material.

7. Carbon nanotube arrangement according to claim 5 or 6, wherein the intermediate layer of one or a combination of the materials

silicon

silica

alumina

Tantalum • Tantalum nitride

Titanium and

Titanium nitride is made.

8. A method for producing a carbon nanotube arrangement, in which

An intermediate layer is applied to at least part of a substrate;

A carbon nanotube catalyst material layer to catalyze the growth of

Carbon nanotubes on the carbon nanotube catalyst material layer on at least a part the intermediate layer is applied, the carbon nanotube catalyst material layer or iron; o at least one other material that catalytically supports the growth of carbon nanotubes; and o has carbon.

9. The method of claim 8, wherein carbon nanotubes are grown on the carbon nanotube catalyst material layer.

10. The method of claim 8 or 9, wherein the intermediate layer is made of an electrically conductive material.

11. The method according to any one of claims 8 to 10, wherein the intermediate layer made of one or a combination of the materials • silicon

silica

alumina

tantalum

Tantalum nitride • Titanium and / or

Titanium nitride is produced.

12. The method according to any one of claims 8 to 11, wherein the carbon nanotube catalyst material layer is applied to the intermediate layer by means of molecular beam epitaxy or by means of sputtering.

13. The method according to any one of claims 8 to 12, wherein the carbon nanotubes by introducing one or a combination of the materials • acetylene, Methane,

• Ethen, and / or

• Acetone is grown on the carbon nanotube catalyst material layer after the intermediate layer has been heated to about 600 ° C under a hydrogen atmosphere for about 5 minutes.